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1. 发明授权

US08493540B2 Display panel and method of manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US08493540B2
公开(公告)日：2013-07-23
申请号：US12335095
申请日：2008-12-15
申请人： Kyoung-Tai Han , Jang-Soo Kim , Byung-Duk Yang
发明人： Kyoung-Tai Han , Jang-Soo Kim , Byung-Duk Yang
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394 , G02F1/133512 , G02F1/136209 , G02F2001/136222 , H01L27/12 , H01L27/1214
摘要： A display panel comprises a first substrate, a second substrate including a display area and a peripheral area surrounding the display area, a transistor layer including, formed in the display area of the substrate, at least one transistor connected to a gate line and a data line, at least one color filter formed in a plurality of pixel regions on the transistor layer, a light blocking member disposed between the color filters, at least one pixel electrode formed on the color filter, an opaque spacing part formed on the color filter corresponding to the transistor so as to maintain a cell gap between the first and second substrates. The light blocking member in some embodiments of the invention is not formed on the first and second transistors to allow for inspection of a channel in the transistor.
摘要翻译：显示面板包括第一基板，包括显示区域和围绕显示区域的外围区域的第二基板，包括形成在基板的显示区域中的至少一个连接到栅极线的晶体管和数据的晶体管层形成在所述晶体管层上的多个像素区域中的至少一个滤色器，设置在所述滤色器之间的遮光构件，形成在所述滤色器上的至少一个像素电极，形成在所述滤色器上的不透明间隔部分以保持第一和第二基板之间的单元间隙。本发明的一些实施例中的阻光构件不形成在第一和第二晶体管上，以允许检查晶体管中的沟道。

2. 发明授权

US08253891B2 Thin film transistor substrate and liquid crystal display including the same 有权
标题翻译：薄膜晶体管基板和液晶显示器包括相同的
公开(公告)号：US08253891B2
公开(公告)日：2012-08-28
申请号：US12425842
申请日：2009-04-17
申请人： Se-Hwan Yu , Hyang-Shik Kong , Jang-Soo Kim , Byung-Duk Yang , Kyoung-Tai Han
发明人： Se-Hwan Yu , Hyang-Shik Kong , Jang-Soo Kim , Byung-Duk Yang , Kyoung-Tai Han
IPC分类号： G02F1/1335
CPC分类号： G02F1/136209 , G02F1/13394 , G02F2001/133388 , G02F2001/13396 , G02F2001/136222
摘要： A thin film transistor array panel includes: a substrate, a plurality of gate and data lines, a thin film transistor, a light blocking member, a color filter, and a pixel electrode. The substrate includes a display area having a plurality of pixels and a non-display area. The gate lines and data lines are formed on the substrate. The thin film transistor is connected to a respective gate line and data line of the plurality of gate and data lines. The light blocking member is formed on the non-display area, the gate line, the data line, and the thin film transistor. The color filter is formed on the light blocking member. The pixel electrode is formed on the color filter. The color filter covers the entire light blocking member of the non-display area.
摘要翻译：薄膜晶体管阵列面板包括：基板，多个栅极和数据线，薄膜晶体管，遮光部件，滤色器和像素电极。基板包括具有多个像素和非显示区域的显示区域。栅极线和数据线形成在衬底上。薄膜晶体管连接到多个栅极和数据线的相应的栅极线和数据线。遮光构件形成在非显示区域，栅极线，数据线和薄膜晶体管上。滤光器形成在遮光部件上。像素电极形成在滤色器上。滤色器覆盖非显示区域的整个遮光构件。

3. 发明授权

US08017949B2 TFT substrate and method of fabricating the same 有权
标题翻译： TFT基板及其制造方法
公开(公告)号：US08017949B2
公开(公告)日：2011-09-13
申请号：US12468419
申请日：2009-05-19
申请人： Eun-Guk Lee , Jang-Soo Kim , Hyang-Shik Kong , Sang-Soo Kim , Shi-Yul Kim , Yoon-Ho Kang , Hoon Kang , Byung-Duk Yang , Kyoung-Tai Han , Dong-Yoon Kim
发明人： Eun-Guk Lee , Jang-Soo Kim , Hyang-Shik Kong , Sang-Soo Kim , Shi-Yul Kim , Yoon-Ho Kang , Hoon Kang , Byung-Duk Yang , Kyoung-Tai Han , Dong-Yoon Kim
IPC分类号： H01L29/06
CPC分类号： G02F1/136227 , G02F1/136209 , G02F2001/136222 , H01L27/124 , H01L27/1248
摘要： Provided are a thin-film transistor (TFT) substrate which can facilitate the formation of contact holes and has improved reliability and a method of fabricating the TFT substrate. The TFT substrate includes a gate wiring formed on an insulating substrate; a data wiring defining a pixel region by intersecting the gate wiring, the data wiring including a source electrode and a drain electrode; a plurality of black matrix barrier ribs formed along the boundaries of the pixel region; a color filter formed to cover the pixel region; a pixel electrode formed on the color filter; and a plurality of contact holes formed through the color filter near the corners of the pixel region through which the pixel electrode and the drain electrode contact each other.
摘要翻译：提供一种薄膜晶体管（TFT）基板，其可以促进形成接触孔并且具有改进的可靠性以及制造TFT基板的方法。 TFT基板包括形成在绝缘基板上的栅极布线; 数据线，其通过与所述栅极布线相交定义像素区域，所述数据布线包括源电极和漏电极; 沿所述像素区域的边界形成的多个黑矩阵障壁; 形成为覆盖像素区域的滤色器; 形成在滤色器上的像素电极; 以及在像素电极和漏极彼此通过的像素区域的角部附近通过滤色器形成的多个接触孔。

4. 发明申请

US20100079710A1 DISPLAY SUBSTRATE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US20100079710A1
公开(公告)日：2010-04-01
申请号：US12408213
申请日：2009-03-20
申请人： Byung-Duk Yang , Jang-Soo Kim , Woo-Geun Lee , Ki-Won Kim , Sang-Ki Kwak , Hyang-Shik Kong , Sang-Hun Lee
发明人： Byung-Duk Yang , Jang-Soo Kim , Woo-Geun Lee , Ki-Won Kim , Sang-Ki Kwak , Hyang-Shik Kong , Sang-Hun Lee
IPC分类号： G02F1/1335 , G02F1/1333 , G02F1/13
CPC分类号： G02F1/136204 , G02F1/13392 , G02F1/1341 , G02F2001/133388
摘要： A display substrate includes a transistor layer, a plurality of color filters, a first blocking member, a supporting member, a circuit part, a second blocking member and a protruding member. The first blocking member is disposed between different color filters. The supporting member maintains a distance between a base substrate and a substrate facing the base substrate. A circuit part is disposed in a peripheral area surrounding a display area, and the circuit part includes a metal pattern and a contact electrode in contact with the metal pattern. The second blocking member includes substantially the same material as the first blocking member and the second blocking member covers the circuit part. The protruding member includes substantially the same material as the second blocking member, and is integrally formed with the second blocking member.
摘要翻译：显示基板包括晶体管层，多个滤色器，第一阻挡构件，支撑构件，电路部分，第二阻挡构件和突出构件。第一阻挡构件设置在不同的滤色器之间。支撑构件保持基底基板和面向基底基板的基板之间的距离。电路部分设置在围绕显示区域的周边区域中，并且电路部分包括与金属图案接触的金属图案和接触电极。第二阻挡构件包括与第一阻挡构件基本相同的材料，并且第二阻挡构件覆盖电路部分。突出构件包括与第二阻挡构件基本相同的材料，并且与第二阻挡构件一体地形成。

5. 发明授权

US08077275B2 Display substrate and a method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08077275B2
公开(公告)日：2011-12-13
申请号：US12408213
申请日：2009-03-20
申请人： Byung-Duk Yang , Jang-Soo Kim , Woo-Geun Lee , Ki-Won Kim , Sang-Ki Kwak , Hyang-Shik Kong , Sang-Hun Lee
发明人： Byung-Duk Yang , Jang-Soo Kim , Woo-Geun Lee , Ki-Won Kim , Sang-Ki Kwak , Hyang-Shik Kong , Sang-Hun Lee
IPC分类号： G02F1/1339 , G02F1/1335
CPC分类号： G02F1/136204 , G02F1/13392 , G02F1/1341 , G02F2001/133388
摘要： A display substrate includes a transistor layer, a plurality of color filters, a first blocking member, a supporting member, a circuit part, a second blocking member and a protruding member. The first blocking member is disposed between different color filters. The supporting member maintains a distance between a base substrate and a substrate facing the base substrate. A circuit part is disposed in a peripheral area surrounding a display area, and the circuit part includes a metal pattern and a contact electrode in contact with the metal pattern. The second blocking member includes substantially the same material as the first blocking member and the second blocking member covers the circuit part. The protruding member includes substantially the same material as the second blocking member, and is integrally formed with the second blocking member.
摘要翻译：显示基板包括晶体管层，多个滤色器，第一阻挡构件，支撑构件，电路部分，第二阻挡构件和突出构件。第一阻挡构件设置在不同的滤色器之间。支撑构件保持基底基板和面向基底基板的基板之间的距离。电路部分设置在围绕显示区域的周边区域中，并且电路部分包括与金属图案接触的金属图案和接触电极。第二阻挡构件包括与第一阻挡构件基本相同的材料，并且第二阻挡构件覆盖电路部分。突出构件包括与第二阻挡构件基本相同的材料，并且与第二阻挡构件一体地形成。

6. 发明授权

US07501297B2 Thin film transistor array panel and manufacturing method thereof 失效
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US07501297B2
公开(公告)日：2009-03-10
申请号：US11336087
申请日：2006-01-20
申请人： Jang-Soo Kim , Soo-Jin Kim , Kyoung-Tai Han , Hee-Hwan Choe , Joo-Han Kim
发明人： Jang-Soo Kim , Soo-Jin Kim , Kyoung-Tai Han , Hee-Hwan Choe , Joo-Han Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F1/136213 , G02F1/136227 , G02F2001/136236 , H01L27/1214 , H01L27/124 , H01L27/14692
摘要： A method of manufacturing a thin film transistor array panel is provided, The method includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the semiconductor layer; depositing a passivation layer on the data line and the drain electrode; forming a photoresist including a first portion and a second portion thinner than the first portion on the passivation layer; etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode at least in part; removing the second portion of the photoresist; depositing a conductive film; and removing the photoresist to form a pixel electrode on the exposed portion of the drain electrode.
摘要翻译：提供一种制造薄膜晶体管阵列面板的方法。该方法包括：在基板上形成栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成半导体层; 在半导体层上形成数据线和漏电极; 在数据线和漏电极上沉积钝化层; 在所述钝化层上形成包含比所述第一部分薄的第一部分和第二部分的光致抗蚀剂; 使用所述光致抗蚀剂作为掩模蚀刻所述钝化层，以至少部分地暴露所述漏电极的一部分; 去除光致抗蚀剂的第二部分; 沉积导电膜; 并且去除光致抗蚀剂以在漏电极的暴露部分上形成像素电极。

7. 发明申请

US20060160282A1 Thin film transistor array panel and manufacturing method thereof 失效
公开(公告)号：US20060160282A1
公开(公告)日：2006-07-20
申请号：US11336087
申请日：2006-01-20
申请人： Jang-Soo Kim , Soo-Jin Kim , Kyoung-Tai Han , Hee-Hwan Choe , Joo-Han Kim
发明人： Jang-Soo Kim , Soo-Jin Kim , Kyoung-Tai Han , Hee-Hwan Choe , Joo-Han Kim
IPC分类号： H01L21/84 , H01L21/00
CPC分类号： H01L27/1288 , G02F1/136213 , G02F1/136227 , G02F2001/136236 , H01L27/1214 , H01L27/124 , H01L27/14692
摘要： A method of manufacturing a thin film transistor array panel is provided, The method includes: forming a gate line on a substrate; forming a gate insulating layer on the gate line; forming a semiconductor layer on the gate insulating layer; forming a data line and a drain electrode on the semiconductor layer; depositing a passivation layer on the data line and the drain electrode; forming a photoresist including a first portion and a second portion thinner than the first portion on the passivation layer; etching the passivation layer using the photoresist as a mask to expose a portion of the drain electrode at least in part; removing the second portion of the photoresist; depositing a conductive film; and removing the photoresist to form a pixel electrode on the exposed portion of the drain electrode.

8. 发明授权

US09046727B2 Thin film transistor array panel and manufacturing method of the same 有权
标题翻译：薄膜晶体管阵列及其制造方法相同
公开(公告)号：US09046727B2
公开(公告)日：2015-06-02
申请号：US12414932
申请日：2009-03-31
申请人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
发明人： Kwang-Ho Lee , Jang-Soo Kim , Hong-Suk Yoo , Sang-Soo Kim , Shi-Yul Kim , Jae-Hyoung Youn
IPC分类号： H01L33/00 , H01L21/28 , G02F1/1362 , G02F1/1339 , H01L27/12
CPC分类号： H01L27/124 , G02F1/13394 , G02F1/136209 , G02F1/136227 , G02F2001/136222 , H01L27/1248 , H01L27/1262
摘要： A thin film transistor (“TFT”) array panel includes; an insulation substrate, a TFT disposed on the insulation substrate and including a drain electrode, a passivation layer covering the TFT and including a contact portion disposed therein corresponding to the drain electrode, a partition comprising an organic material disposed on the passivation layer, and including a transverse portion, a longitudinal portion, and a contact portion disposed on the drain electrode, a color filter disposed on the passivation layer and disposed in a region defined by the partition, an organic capping layer disposed on the partition and the color filter, and a pixel electrode disposed on the organic capping layer, and connected to the drain electrode through the contact portion of the passivation layer and the contact portion of the partition, wherein a contact hole is formed in the organic capping layer corresponding to the contact portion of the passivation layer.
摘要翻译：薄膜晶体管（“TFT”）阵列面板包括：绝缘基板，设置在所述绝缘基板上并包括漏电极的TFT，覆盖所述TFT的钝化层，并且包括设置在其中的所述漏电极对应的接触部分，所述隔板包括设置在所述钝化层上的有机材料，并且包括横向部分，纵向部分和设置在漏电极上的接触部分，设置在钝化层上并设置在由隔板限定的区域中的滤色器，设置在隔板上的有机覆盖层和滤色器，以及设置在所述有机覆盖层上的像素电极，并且通过所述钝化层的接触部分和所述隔离物的接触部分连接到所述漏电极，其中在所述有机覆盖层中形成接触孔，所述接触孔对应于所述钝化层的接触部分钝化层。

9. 发明授权

US08604478B2 Thin-film transistor substrate, method of manufacturing the same and display apparatus having the same 有权
标题翻译：薄膜晶体管基板及其制造方法以及具有该薄膜晶体管基板的显示装置
公开(公告)号：US08604478B2
公开(公告)日：2013-12-10
申请号：US13168769
申请日：2011-06-24
申请人： Hye-Young Ryu , Jang-Soo Kim , Su-Hyoung Kang
发明人： Hye-Young Ryu , Jang-Soo Kim , Su-Hyoung Kang
IPC分类号： H01L29/04
CPC分类号： G02F1/136227 , G02F2001/136222 , H01L27/3258
摘要： In a thin-film transistor (TFT) substrate, a gate insulating layer is disposed on a gate electrode electrically connected to a gate line. A semiconductor layer is disposed on the gate insulating layer. A source electrode is electrically connected to a data line that intersects the gate line. A drain electrode faces the source electrode and defines a channel area of a semiconductor layer. An organic layer is disposed on the data line and has a first opening exposing the channel area. An inorganic insulating layer is disposed on the organic layer. A pixel electrode is disposed on the inorganic insulating layer and electrically connected to the drain electrode. The inorganic insulating layer covers the first opening, and thickness of the inorganic insulating layer is substantially uniform.
摘要翻译：在薄膜晶体管（TFT）基板中，栅极绝缘层设置在与栅极线电连接的栅电极上。半导体层设置在栅极绝缘层上。源极电极与与栅极线相交的数据线电连接。漏电极面对源电极并限定半导体层的沟道面积。有机层设置在数据线上，并且具有暴露通道区域的第一开口。无机绝缘层设置在有机层上。像素电极设置在无机绝缘层上并与漏电极电连接。无机绝缘层覆盖第一开口，无机绝缘层的厚度基本均匀。

10. 发明授权

US08598581B2 Thin film transistor substrate and method for manufacturing the same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08598581B2
公开(公告)日：2013-12-03
申请号：US12434907
申请日：2009-05-04
申请人： Jang-Soo Kim , Jae-Hyoung Youn , Sang-Soo Kim , Dong-Gyu Kim
发明人： Jang-Soo Kim , Jae-Hyoung Youn , Sang-Soo Kim , Dong-Gyu Kim
IPC分类号： H01L33/00
CPC分类号： H01L29/78633 , H01L27/124 , H01L27/1248
摘要： A method for manufacturing a thin film transistor array panel includes; forming a gate line including a gate electrode and a height increasing member on a substrate, forming a gate insulating layer on the gate line and the height increasing member, forming a semiconductor, a data line including a source electrode, and a drain electrode facing the source electrode and overlapping at least a portion of the height increasing member on the gate insulating layer, forming a first insulating layer on the gate insulating layer, a data line and the drain electrode, forming a light-blocking member on a portion of the first insulating layer corresponding to the gate line and the data line, forming a color filter in an area bound by the light-blocking member, forming a second insulating layer on the light-blocking member and the color filter, and patterning the second insulating layer, the light-blocking member or the color filter, and the first insulating layer to form a contact hole exposing a portion of the drain electrode aligned with the height increasing member.
摘要翻译：薄膜晶体管阵列板的制造方法包括：在基板上形成包括栅电极和高度增加部件的栅极线，在栅极线和高度增加部件上形成栅绝缘层，形成半导体，包括源电极和漏电极的数据线，并且在所述栅极绝缘层上与所述高度增加部件的至少一部分重叠，在所述栅极绝缘层上形成第一绝缘层，在所述栅极绝缘层上形成第一绝缘层，在所述栅极绝缘层上形成阻挡部件，在所述第一对应于栅极线和数据线的绝缘层，在由阻光构件限定的区域中形成滤色器，在遮光构件和滤色器上形成第二绝缘层，并对第二绝缘层进行构图，遮光构件或滤色器，以及第一绝缘层，以形成暴露与高度增加构件对准的漏电极的一部分的接触孔。

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