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1. 发明申请

US20220149237A1 III-Nitride Multi-Wavelength LED Arrays With Etch Stop Layer 有权
公开(公告)号：US20220149237A1
公开(公告)日：2022-05-12
申请号：US17190781
申请日：2021-03-03
申请人： Lumileds LLC
发明人： Robert Armitage , Isaac Wildeson
IPC分类号： H01L33/32 , H01L33/00 , H01L27/15 , H01L33/06 , H01L33/50 , H05B45/30
摘要： An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with

2. 发明授权

US11264530B2 Light emitting diode (LED) devices with nucleation layer 有权
公开(公告)号：US11264530B2
公开(公告)日：2022-03-01
申请号：US16721386
申请日：2019-12-19
申请人： Lumileds LLC
发明人： Isaac Wildeson , Toni Lopez , Hee-Jin Kim , Robert Armitage , Parijat Deb
IPC分类号： H01L33/32 , H01L33/00
摘要： Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

3. 发明申请

US20210193869A1 Light Emitting Diode (LED) Devices With High Density Textures 有权
公开(公告)号：US20210193869A1
公开(公告)日：2021-06-24
申请号：US16721285
申请日：2019-12-19
申请人： Lumileds LLC
发明人： Isaac Wildeson , Toni Lopez , Robert Armitage , Parijat Deb
IPC分类号： H01L33/22 , H01L33/32 , H01L33/00
摘要： Light emitting diode (LED) devices comprise: a patterned substrate comprising a substrate body, a plurality of integral features protruding from the substrate body, and a base surface defined by spaces between the plurality of integral features; a selective layer comprising a dielectric material located on the surfaces of the integral features, wherein there is an absence of the selective layer on the base surface; and a III-nitride layer comprising a III-nitride material on the selective layer and the base surface.

4. 发明授权

US10804429B2 III-nitride multi-wavelength LED for visible light communication 有权
公开(公告)号：US10804429B2
公开(公告)日：2020-10-13
申请号：US16228311
申请日：2018-12-20
申请人： Lumileds LLC
发明人： Isaac Harshman Wildeson , Parijat Pramil Deb , Robert Armitage
IPC分类号： H04B10/00 , H01L33/06 , H01L33/00 , H01L27/15 , H01L33/62 , H01L33/50 , H01L33/32 , H05B45/20 , H05B47/19 , H01L31/167 , H01L33/38 , H04B10/116 , H04B10/572 , H01L33/08 , H01L31/02 , H01L31/0232
摘要： A light emitting diode (LED) array may include a first pixel and a second pixel on a substrate. The first pixel and the second pixel may include one or more tunnel junctions on one or more LEDs. The LED array may include a first trench between the first pixel and the second pixel. The trench may extend to the substrate.

5. 发明授权

US11631786B2 III-nitride multi-wavelength LED arrays with etch stop layer 有权
公开(公告)号：US11631786B2
公开(公告)日：2023-04-18
申请号：US17190781
申请日：2021-03-03
申请人： Lumileds LLC
发明人： Robert Armitage , Isaac Wildeson
IPC分类号： H01L33/32 , H01L33/00 , H01L27/15 , H05B45/30 , H01L33/50 , H01L33/06
摘要： An LED array comprises a first mesa comprising a top surface, at least a first LED including a first p-type layer, a first n-type layer and a first color active region and a tunnel junction on the first LED, a second n-type layer on the tunnel junction, the second n-type layer comprising at least one n-type III-nitride layer with >10% Al mole fraction and at least one n-type III-nitride layer with

6. 发明申请

US20220190198A1 Light Emitting Diode Device 有权
公开(公告)号：US20220190198A1
公开(公告)日：2022-06-16
申请号：US17155499
申请日：2021-01-22
申请人： Lumileds LLC
发明人： Isaac Wildeson , Robert Armitage
IPC分类号： H01L33/06 , H01L33/00 , H01L33/10
摘要： Described are light emitting diode (LED) devices including a combination of electroluminescent quantum wells and photo-luminescent active regions in the same wafer. A first group of QWs with shortest emission wavelength is placed between the p- and n-layers of a p-n junction. Other groups of QWs with longer wavelengths are placed outside the p-n junction in a part of the LED structure where electrical injection of minority carriers does not occur. Electroluminescence emitted by the first group of QWs is absorbed by other group(s) and re-emitted as longer wavelength light. The color of an individual die made on the wafer can be controlled by either etching away unwanted groups of longer-wavelength QWs at the position of that die, or keeping them intact. Wavelength-selective mirrors that increase down conversion efficiency may be selectively applied to die where longer wavelength emission is desired. The use of tunnel junction contacts facilitates integration of wavelength selective mirrors to external surfaces of the die and avoids problems of conductivity type conversion on etched p-GaN layers.

7. 发明申请

US20220085236A1 Light Emitting Diode (LED) Devices With Nucleation Layer 有权
公开(公告)号：US20220085236A1
公开(公告)日：2022-03-17
申请号：US17531922
申请日：2021-11-22
申请人： Lumileds LLC
发明人： Isaac Wildeson , Toni Lopez , Hee-Jin Kim , Robert Armitage , Parijat Deb
IPC分类号： H01L33/00 , H01L33/32
摘要： Described are light emitting diode (LED) devices having patterned substrates and methods for effectively growing epitaxial III-nitride layers on them. A nucleation layer, comprising a III-nitride material, is grown on a substrate before any patterning takes place. The nucleation layer results in growth of smooth coalesced III-nitride layers over the patterns.

8. 发明申请

US20190198709A1 III-NITRIDE MULTI-COLOR ON WAFER MICRO-LED ENABLED BY TUNNEL JUNCTIONS 审中-公开
公开(公告)号：US20190198709A1
公开(公告)日：2019-06-27
申请号：US16228211
申请日：2018-12-20
申请人： Lumileds LLC
发明人： Isaac Harshman Wildeson , Parijat Pramil Deb , Robert Armitage
IPC分类号： H01L33/06 , H01L33/00 , H01L33/32 , H01L33/62 , H01L33/50 , H01L27/15
CPC分类号： H01L27/153 , H01L27/156 , H01L31/02019 , H01L31/02327 , H01L31/167 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/32 , H01L33/38 , H01L33/50 , H01L33/62 , H01L2933/0016 , H04B10/116 , H04B10/572 , H05B33/086 , H05B37/0272
摘要： A device may include a first light emitting diode (LED) on a first surface of a substrate, a first tunnel junction on the first LED a first semiconductor layer on the first tunnel junction, and a conformal dielectric layer on at least a sidewall of the LED and the first surface of the substrate.

9. 发明申请

US20230138761A1 Color LEDS With Integrated Optical Filtering Elements 有权
公开(公告)号：US20230138761A1
公开(公告)日：2023-05-04
申请号：US17918378
申请日：2021-04-16
申请人： Lumileds LLC
发明人： Robert Armitage , Isaac Wildeson
IPC分类号： H01L33/44 , H01L33/32
摘要： A red LED includes a semiconductor LED layer having an active InGaN layer with intrinsic emission spectrum having LDom in a range of from 580 nm to 620 nm. A filter is positioned over the semiconductor LED layer to filter shorter wavelengths of the intrinsic emission spectrum and shift LDom by between 5 nm to 20 nm to a longer wavelength.

10. 发明申请

US20230006093A1 Light Emitting Diode Device 有权
公开(公告)号：US20230006093A1
公开(公告)日：2023-01-05
申请号：US17940241
申请日：2022-09-08
申请人： Lumileds LLC
发明人： Isaac Wildeson , Robert Armitage
IPC分类号： H01L33/06 , H01L33/10 , H01L33/00 , H01L33/08
摘要： Described are light emitting diode (LED) devices including a combination of electroluminescent quantum wells and photo-luminescent active regions in the same wafer. A first group of QWs with shortest emission wavelength is placed between the p- and n-layers of a p-n junction. Other groups of QWs with longer wavelengths are placed outside the p-n junction in a part of the LED structure where electrical injection of minority carriers does not occur. Electroluminescence emitted by the first group of QWs is absorbed by other group(s) and re-emitted as longer wavelength light. The color of an individual die made on the wafer can be controlled by either etching away unwanted groups of longer-wavelength QWs at the position of that die, or keeping them intact. Wavelength-selective mirrors that increase down conversion efficiency may be selectively applied to die where longer wavelength emission is desired. The use of tunnel junction contacts facilitates integration of wavelength selective mirrors to external surfaces of the die and avoids problems of conductivity type conversion on etched p-GaN layers.

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