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1. 发明授权

US09023170B2 Bonding unit control unit and multi-layer bonding method 有权
公开(公告)号：US09023170B2
公开(公告)日：2015-05-05
申请号：US13260041
申请日：2010-10-27
申请人： Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
发明人： Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
IPC分类号： B29C70/68 , H01L21/67 , B81C1/00 , B81C99/00
摘要： A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.

2. 发明授权

US09130000B2 Wafer bonding device and wafer bonding method 有权
标题翻译：晶圆接合装置和晶圆接合方法
公开(公告)号：US09130000B2
公开(公告)日：2015-09-08
申请号：US13121584
申请日：2009-02-19
申请人： Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Kensuke Ide , Takenori Suzuki
发明人： Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Kensuke Ide , Takenori Suzuki
IPC分类号： H01L21/30 , H01L21/67 , B29C65/78 , H01L21/683 , B23K17/00 , B23K37/04 , B23K37/047 , H01L21/18
CPC分类号： H01L21/67092 , B23K17/00 , B23K37/0408 , B23K37/047 , B23K2101/40 , B29C65/7897 , H01L21/187 , H01L21/6833
摘要： A wafer bonding method includes: holding a first substrate with an upper holding mechanism 7 by applying a voltage to the upper holding mechanism 7; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism 8; and dechucking the bonded substrate from the upper holding mechanism 7 after a voltage which attenuates while alternating is applied to the upper holding mechanism 7. By applying the voltage which attenuates while alternating to the upper holding mechanism 7, residual attracting force between the bonded substrate and the upper holding mechanism 7 is reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.
摘要翻译：晶片接合方法包括：通过向上保持机构7施加电压来保持具有上保持机构7的第一基板; 通过接合第一基板和保持有下保持机构8的第二基板来产生键合基板; 并且在交替施加到上保持机构7上的电压被衰减的电压之后从上保持机构7脱扣。通过施加与上保持机构7交替的衰减的电压，键合衬底与接合衬底之间的残留吸引力上部保持机构7减少，从而能够在更短的时间内更可靠地使接合基板从保持机构拔出。结果，第一基板和第二基板可以在更短的时间内粘合。

3. 发明授权

US09005390B2 Room temperature bonding apparatus 有权
标题翻译：室温接合装置
公开(公告)号：US09005390B2
公开(公告)日：2015-04-14
申请号：US13530714
申请日：2012-06-22
申请人： Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Satoshi Tawara , Jun Utsumi , Yoichiro Tsumura , Kensuke Ide , Takenori Suzuki
发明人： Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Satoshi Tawara , Jun Utsumi , Yoichiro Tsumura , Kensuke Ide , Takenori Suzuki
IPC分类号： B29C65/00 , B32B37/00 , H01L21/677 , H01L21/67 , H01L21/673 , H01L21/68 , H01L21/683
CPC分类号： H01L21/67778 , H01L21/67092 , H01L21/6732 , H01L21/67748 , H01L21/68 , H01L21/683 , Y10T156/1744
摘要： A room temperature bonding apparatus includes angle adjustment means supporting a first sample stage holding a first substrate so as to be able to change a direction of the first sample stage; a first driving device driving the first stage in a first direction; a second driving device driving a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table supporting the second sample stage in the first direction when the second substrate and the first substrate are brought into contact. The apparatus can impose a load exceeding a withstand load of the second driving device on the first and second substrates. Further, the apparatus uses angle adjustment means to change direction of the first substrate to be parallel with the second substrate and uniformly impose the larger load on a bonding surface.
摘要翻译：室温接合装置包括角度调节装置，支撑保持第一基板的第一样品台，以便能够改变第一样品台的方向; 第一驱动装置，其沿第一方向驱动第一级; 第二驱动装置，驱动在不与第一方向平行的第二方向上保持第二基板的第二样品台; 以及当所述第二基板和所述第一基板接触时，在所述第一方向上支撑所述第二样品台的托架支撑台。该装置可以施加超过第二驱动装置的耐受负载的负载在第一和第二基板上。此外，该装置使用角度调节装置来改变与第二基板平行的第一基板的方向，并将较大的负载均匀地施加在接合表面上。

4. 发明授权

US08985175B2 Room temperature bonding machine and room temperature bonding method 有权
标题翻译：室温粘合机和室温接合方法
公开(公告)号：US08985175B2
公开(公告)日：2015-03-24
申请号：US12811177
申请日：2008-09-29
申请人： Masato Kinouchi , Takayuki Goto , Satoshi Tawara , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki
发明人： Masato Kinouchi , Takayuki Goto , Satoshi Tawara , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki
IPC分类号： B32B37/10 , B23K20/02
CPC分类号： B32B37/1009 , B23K20/02 , B32B37/10 , B32B2309/68 , H01L21/187 , H01L21/2007 , H01L21/67092 , H01L21/67253
摘要： A room temperature bonding machine is provided with an evacuation apparatus, a gas supply apparatus, a pressure gauge, a cleaner apparatus, a pressure controller and a pressing mechanism. The evacuation apparatus evacuates gas from the chamber. The gas supply apparatus supplies introduction gas into the chamber. The pressure gauge measures the pressure in the chamber. The cleaner apparatus cleans first and second substrates in the chamber when said pressure is at a predetermined degree of vacuum. The pressure controller controls both of the evacuation apparatus and the gas supply apparatus so that the pressure is regulated to a target pressure. The pressing mechanism presses and bonds the first and second substrates when the pressure is set to said target pressure.
摘要翻译：室温粘合机设置有排气装置，气体供给装置，压力计，清洁装置，压力控制器和按压机构。抽空装置从室抽出气体。气体供给装置将引入气体供给到室内。压力表测量室内的压力。当所述压力处于预定的真空度时，清洁器装置清洗腔室中的第一和第二基板。压力控制器控制排气装置和气体供给装置，使得压力被调节到目标压力。当压力设定为所述目标压力时，按压机构按压并结合第一和第二基板。

5. 发明申请

US20120031557A1 BONDING UNIT CONTROL UNIT AND MULTI-LAYER BONDING METHOD 有权
标题翻译：结合单元控制单元和多层联结方法
公开(公告)号：US20120031557A1
公开(公告)日：2012-02-09
申请号：US13260041
申请日：2010-10-27
申请人： Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
发明人： Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
IPC分类号： B29C70/68 , B65C9/40
CPC分类号： H01L21/67092 , B81C1/00357 , B81C99/0025
摘要： A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.
摘要翻译：本发明的多层接合方法包括：通过在接合室中接合第一基板和中间基板来形成第一接合基板; 当所述第一键合衬底布置在所述接合室内时，在所述接合室内传送第二衬底; 以及通过在所述接合室中接合所述第一键合衬底和所述第二衬底来形成第二接合衬底。根据这样的多层接合方法，可以将上侧基板与中间基板接合，然后将第一接合基板与下侧基板接合，而不从接合室取出第一接合基板。为此，可以高速且低成本地制造第二粘结衬底。

6. 发明授权

US09064910B2 Bonding unit control unit and multi-layer bonding method 有权
标题翻译：接合单元控制单元和多层接合方式
公开(公告)号：US09064910B2
公开(公告)日：2015-06-23
申请号：US13260041
申请日：2010-10-27
申请人： Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
发明人： Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
IPC分类号： B29C70/68 , H01L21/67 , B81C1/00 , B81C99/00
CPC分类号： H01L21/67092 , B81C1/00357 , B81C99/0025
摘要： A multi-layer bonding method of the present invention includes: forming a first bonded substrate by bonding a first substrate and an intermediate substrate in a bonding chamber; conveying a second substrate inside said bonding chamber when said first bonded substrate is arranged inside said bonding chamber; and forming a second bonded substrate by bonding said first bonded substrate and said second substrate in said bonding chamber. According to such a multi-layer bonding method, the upper-side substrate can be bonded with an intermediate substrate and then a first bonded substrate is bonded with a lower-side substrate without taking out the first bonded substrate from the bonding chamber. For this reason, a second bonded substrate can be produced at high speed and at a low cost.
摘要翻译：本发明的多层接合方法包括：通过在接合室中接合第一基板和中间基板来形成第一接合基板; 当所述第一键合衬底布置在所述接合室内时，在所述接合室内传送第二衬底; 以及通过在所述接合室中接合所述第一键合衬底和所述第二衬底来形成第二接合衬底。根据这样的多层接合方法，可以将上侧基板与中间基板接合，然后将第一接合基板与下侧基板接合，而不从接合室取出第一接合基板。为此，可以高速且低成本地制造第二粘结衬底。

7. 发明授权

US08857487B2 Room temperature bonding apparatus 有权
标题翻译：室温接合装置
公开(公告)号：US08857487B2
公开(公告)日：2014-10-14
申请号：US12919997
申请日：2008-03-11
申请人： Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Satoshi Tawara , Jun Utsumi , Yoichiro Tsumura , Kensuke Ide , Takenori Suzuki
发明人： Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Satoshi Tawara , Jun Utsumi , Yoichiro Tsumura , Kensuke Ide , Takenori Suzuki
IPC分类号： B29C65/00 , B32B37/00 , H01L21/673 , H01L21/677 , H01L21/68 , H01L21/683 , H01L21/67
CPC分类号： H01L21/67778 , H01L21/67092 , H01L21/6732 , H01L21/67748 , H01L21/68 , H01L21/683 , Y10T156/1744
摘要： A room temperature bonding apparatus includes: an angle adjustment mechanism that supports a first sample stage holding a first substrate to a first stage so as to be able to change a direction of the first sample stage; a first driving device that drives the first stage in a first direction; a second driving device that drives a second sample stage holding a second substrate in a second direction not parallel to the first direction; and a carriage support table that supports the second sample stage in the first direction when the second substrate and the first substrate are brought into press contact with each other. In this case, the room temperature bonding apparatus can impose a larger load exceeding a withstand load of the second driving device on the first substrate and the second substrate. Further, the room temperature bonding apparatus can use the angle adjustment mechanism to change a direction of the first substrate such that the first substrate and the second substrate come into parallel contact with each other, and uniformly impose the larger load on a bonding surface.
摘要翻译：室温接合装置包括：角度调节机构，其将保持第一基板的第一样品台支撑到第一阶段，以便能够改变第一样品台的方向; 第一驱动装置，其以第一方向驱动第一级; 第二驱动装置，其驱动在不与第一方向平行的第二方向上保持第二基板的第二样品台; 以及当第二基板和第一基板彼此压接时支撑第一方向上的第二样品台的托架支撑台。在这种情况下，室温接合装置可以在第一基板和第二基板上施加超过第二驱动装置的承受负荷的较大载荷。此外，室温接合装置可以使用角度调节机构来改变第一基板的方向，使得第一基板和第二基板彼此平行接触，并且在接合表面上均匀地施加较大的负载。

8. 发明申请

US20140224405A1 ROOM-TEMPERATURE BONDING APPARATUS 有权
标题翻译：室温接合装置
公开(公告)号：US20140224405A1
公开(公告)日：2014-08-14
申请号：US14345984
申请日：2012-02-24
申请人： Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
发明人： Masato Kinouchi , Takayuki Goto , Takeshi Tsuno , Kensuke Ide , Takenori Suzuki
IPC分类号： H01L21/02 , H01L21/67
CPC分类号： H01L21/02 , H01L21/67011 , H01L21/67092 , H01L21/67253 , H01L21/6831
摘要： A room-temperature bonding apparatus of the present invention includes: a plurality of first beam sources configured to emit a plurality of first activation beams which are irradiated to a first activation surface of a first substrate; a plurality of second beam sources configured to emit a plurality of second activation beams which are irradiated to a second activation surface of a second substrate; and a pressure welding mechanism configured to bond the first substrate and the second substrate by bring the first activation surface and the second activation surface contact, after the first activation surface and the second activation surface are irradiated. The room-temperature bonding apparatus can more uniformly irradiate to the first activation surface and the second activation surface, so that the first substrate and the second substrate can be more appropriately bonded with each other, compared with another room-temperature bonding apparatus which irradiates the first activation surface and the second activation surface by using one beam source.
摘要翻译：本发明的室温接合装置包括：多个第一光束源，被配置为发射照射到第一基板的第一激活表面的多个第一激活光束; 多个第二光束源，被配置为发射多个第二激活光束，其被照射到第二基板的第二激活表面; 以及压力焊接机构，其被配置为在所述第一激活表面和所述第二激活表面被照射之后使所述第一激活表面和所述第二激活表面接触来接合所述第一基板和所述第二基板。与另外的室温接合装置相比，室温接合装置能够更均匀地照射到第一活化面和第二活化面，使得第一基板和第二基板能够更适当地接合第一激活表面和第二激活表面。

9. 发明申请

US20110277904A1 ROOM TEMPERATURE BONDING APPARATUS 有权
标题翻译：室温接合装置
公开(公告)号：US20110277904A1
公开(公告)日：2011-11-17
申请号：US13139085
申请日：2009-09-29
申请人： Masato Kinouchi , Takayuki Goto , Satoshi Tawara , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki
发明人： Masato Kinouchi , Takayuki Goto , Satoshi Tawara , Takeshi Tsuno , Jun Utsumi , Kensuke Ide , Takenori Suzuki
IPC分类号： B32B38/18 , B32B41/00 , B32B37/02
CPC分类号： H01L21/6838 , B23K20/02 , B23K2101/40 , H01L21/67201 , Y10T156/10 , Y10T156/17
摘要： A room temperature bonding apparatus according to the present invention is provided with a load lock chamber having an internal space which is pressure-reduced; and a cartridge arranged in the load lock chamber. The cartridge includes an island portion formed to contact a substrate when the substrate is put on the cartridge. A flow passage is formed for the island portion to connect a space between the cartridge and the substrate to outside when the substrate is put on the cartridge. Therefore, in the room temperature bonding apparatus can prevent making the substrate is moved to the cartridge due to gas when the internal space is pressure-reduced.
摘要翻译：根据本发明的室温接合装置设置有具有减压的内部空间的负载锁定室; 以及设置在负载锁定室中的盒。所述盒包括当所述基板被放置在所述盒上时形成为接触基板的岛部。当基板被放置在盒上时，形成用于岛部分的流动通道，以将盒和基板之间的空间连接到外部。因此，室温接合装置可以防止当内部空间减压时由于气体使基板移动到墨盒。

10. 发明申请

US20110207291A1 WAFER BONDING DEVICE AND WAFER BONDING METHOD 有权
公开(公告)号：US20110207291A1
公开(公告)日：2011-08-25
申请号：US13121584
申请日：2009-02-19
申请人： Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Kensuke Ide , Takenori Suzuki
发明人： Takeshi Tsuno , Takayuki Goto , Masato Kinouchi , Kensuke Ide , Takenori Suzuki
IPC分类号： H01L21/762 , H01L21/02
CPC分类号： H01L21/67092 , B23K17/00 , B23K37/0408 , B23K37/047 , B23K2101/40 , B29C65/7897 , H01L21/187 , H01L21/6833
摘要： A wafer bonding method includes: holding a first substrate with an upper holding mechanism 7 by applying a voltage to the upper holding mechanism 7; generating a bonded substrate by bonding the first substrate and a second substrate held with a lower holding mechanism 8; and dechucking the bonded substrate from the upper holding mechanism 7 after a voltage which attenuates while alternating is applied to the upper holding mechanism 7. By applying the voltage which attenuates while alternating to the upper holding mechanism 7, residual attracting force between the bonded substrate and the upper holding mechanism 7 is reduced, thereby enabling the bonded substrate to be dechucked from the holding mechanism more surely in a shorter time period. As a result, the first substrate and the second substrate can be bonded in a shorter time period.
摘要翻译：晶片接合方法包括：通过向上保持机构7施加电压来保持具有上保持机构7的第一基板; 通过接合第一基板和保持有下保持机构8的第二基板来产生键合基板; 并且在交替施加到上保持机构7上的电压被衰减的电压之后从上保持机构7脱扣。通过施加与上保持机构7交替的衰减的电压，键合衬底与接合衬底之间的残留吸引力上部保持机构7减少，从而能够在更短的时间内更可靠地使接合基板从保持机构拔出。结果，第一基板和第二基板可以在更短的时间内粘合。

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