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    • 10. 发明授权
    • Memory array with common word line
    • 具有通用字线的存储器阵列
    • US06594194B2
    • 2003-07-15
    • US09902914
    • 2001-07-11
    • Spencer M. GoldJoseph R. Siegel
    • Spencer M. GoldJoseph R. Siegel
    • G11C800
    • G11C11/419G11C8/16
    • The present invention provides logic to write data to a multi-ported memory array. The memory array is comprised of a plurality of memory banks and a common write word line shared by the memory banks. The memory array includes a plurality of write buffers, wherein each write buffer is associated with one of the memory banks. The memory array further comprises a selector module for selecting a write buffer to write data into its associated memory bank. The memory array further includes a writing module within the write buffer for writing data into the selected memory bank by way of a signal to the memory bank.
    • 本发明提供将数据写入多端口存储器阵列的逻辑。 存储器阵列由多个存储器组和由存储器组共享的公共写入字线组成。 存储器阵列包括多个写缓冲器,其中每个写缓冲器与存储体之一相关联。 存储器阵列还包括选择器模块,用于选择写入缓冲器以将数据写入其相关联的存储体。 存储器阵列还包括写入缓冲器内的写入模块,用于通过向存储体的信号将数据写入所选存储体。