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    • 1. 发明申请
    • FOCUSED BEAM SCATTEROMETRY APPARATUS AND METHOD
    • 聚焦光束扫描仪和方法
    • US20160061723A1
    • 2016-03-03
    • US14833540
    • 2015-08-24
    • Miguel A. AlonsoStephen HeadMichael TheisenThomas Brown
    • Miguel A. AlonsoStephen HeadMichael TheisenThomas Brown
    • G01N21/47G01J4/04G01N21/21
    • H01L22/12G01B11/02G01B11/22G01B11/30G01B2210/56G01N21/21G01N21/9501G03F7/70625
    • The capacity to measure nanoscale features rapidly and accurately is of central importance for the monitoring of manufacturing processes in the production of computer integrated circuits. It is known that far-field scattered light requires a priori sample information in order to reconstruct nanoscale information such as is required in semiconductor metrology. Parameters of interest include, for example, trench depth, duty cycle, wall angle and oxide layer thickness. We describe a scatterometry apparatus and method that uses unconventional polarization states in the pupil of a high NA objective lens, and refer to this as focused beam scatterometry, in which the illumination consists of a focused field with a suitably tailored, spatially-varying polarization distribution. We describe how four or more parameters can be measured and distinguished with an accuracy consistent with the needs laid out in the semiconductor roadmap.
    • 快速准确地测量纳米尺度特征的能力对于计算机集成电路生产过程中的制造过程的监控至关重要。 已知远场散射光需要先验样本信息,以便重建诸如半导体计量学中所需的纳米尺度信息。 感兴趣的参数包括例如沟槽深度,占空比,壁角和氧化物层厚度。 我们描述了在高NA物镜的瞳孔中使用非常规极化状态的散射测量装置和方法,并且将其称为聚焦光束散射法,其中照明由具有适当调整的空间变化的偏振分布的聚焦场 。 我们描述如何测量和区分四个或更多个参数,其精度与半导体路线图中的要求一致。