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    • 9. 发明授权
    • Method for forming conductive film for semiconductor device
    • 半导体器件用导电膜形成方法
    • US6083833A
    • 2000-07-04
    • US97680
    • 1998-06-16
    • Min Su Ahn
    • Min Su Ahn
    • C23C16/56H01L21/205H01L21/285H01L21/44
    • H01L21/28556
    • A method for forming a conductive film for a semiconductor device wherein a conductive film is formed on each wafer loaded in a boat of a vertical furnace of a low pressure chemical vapor deposition apparatus provided with a chamber, a reaction tube in a center portion of the chamber, a boat loaded in the reaction chamber and a heater surrounding the chamber. The method includes a decompression step for reducing pressure in the chamber to a vacuum condition, a deposition step for depositing a conductive film on each wafer by introducing reaction gas into the chamber in the vacuum condition, a purge step for removing from the chamber toxic gas generated in the deposition step, and a normal pressure step for increasing pressure and temperature in the chamber, wherein the pressure increases from the normal pressure step and the temperature increases from the purge step. The method obtains deposition films of high quality which have similar properties since the conductive film deposited on each wafer in an annealing process of the normal pressure step has little shrinkage.
    • 一种形成用于半导体器件的导电膜的方法,其中在装载有设置有腔室的低压化学气相沉积设备的立式炉的船的每个晶片上形成导电膜,在该中空部分的反应管 室,装在反应室中的船和围绕室的加热器。 该方法包括用于将室中的压力减小到真空状态的减压步骤,用于在真空条件下将反应气体引入室中以在每个晶片上沉积导电膜的沉积步骤,用于从室中除去有毒气体的吹扫步骤 以及用于增加腔室中的压力和温度的常压步骤,其中压力从常压步骤增加,并且温度从吹扫步骤增加。 该方法获得具有相似特性的高质量沉积膜,因为在常压步骤的退火过程中沉积在每个晶片上的导电膜几乎没有收缩。