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1. 发明授权

US08273612B2 Display panel and method of manufacturing the same 有权
标题翻译：显示面板及其制造方法
公开(公告)号：US08273612B2
公开(公告)日：2012-09-25
申请号：US12981287
申请日：2010-12-29
申请人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
发明人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
IPC分类号： H01L21/84
CPC分类号： H01L27/12 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
摘要翻译：在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

2. 发明申请

US20090039350A1 Display panel and method of manufacturing the same 审中-公开
标题翻译：显示面板及其制造方法
公开(公告)号：US20090039350A1
公开(公告)日：2009-02-12
申请号：US12214570
申请日：2008-06-20
申请人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
发明人： Min-Seok Oh , Yang-Ho Bae , Pil-Sang Yun , Byeong-Beom Kim , Seung-Ha Choi , Sang-Gab Kim , Chang-Ho Jeong , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Dong-Ju Yang
IPC分类号： H01L29/04 , H01L21/336
CPC分类号： H01L27/12 , G02F2001/136295 , H01L27/124 , H01L29/458
摘要： In a display panel and a method of manufacturing the display panel, a gate line, a data line, and source and drain electrodes including a same material as the data line are formed on a substrate constituting the display panel, and the data line includes an aluminum based alloy containing sufficient nickel to inhibit corrosion during dry etching. The corrosion resistance of the AlNi-containing alloy helps prevent corrosion of the data line, the source electrode, and the drain electrode during selective dry etching that shapes these lines and electrodes.
摘要翻译：在显示面板和制造显示面板的方法中，在构成显示面板的基板上形成包括与数据线相同材料的栅极线，数据线以及源极和漏极，并且数据线包括铝基合金含有足够的镍以在干蚀刻期间抑制腐蚀。含有AlNi的合金的耐腐蚀性有助于防止在形成这些线和电极的选择性干蚀刻期间数据线，源电极和漏电极的腐蚀。

3. 发明授权

US08067774B2 Thin film transistor panel and method of manufacturing the same 有权
标题翻译：薄膜晶体管面板及其制造方法
公开(公告)号：US08067774B2
公开(公告)日：2011-11-29
申请号：US12434942
申请日：2009-05-04
申请人： Seung-Ha Choi , Ki-Yeup Lee , Sang-Gab Kim , Shin-il Choi , Dong-Ju Yang , Hong-Kee Chin , Yu-Gwang Jeong , Ji-Young Park , Dong-Hoon Lee , Byeong-Beom Kim
发明人： Seung-Ha Choi , Ki-Yeup Lee , Sang-Gab Kim , Shin-il Choi , Dong-Ju Yang , Hong-Kee Chin , Yu-Gwang Jeong , Ji-Young Park , Dong-Hoon Lee , Byeong-Beom Kim
IPC分类号： H01L27/14
CPC分类号： H01L29/458 , H01L27/124 , H01L29/4908
摘要： After forming a signal line including aluminum, an upper layer of an oxide layer including aluminum that covers the signal line is formed in the same chamber and by using the same sputtering target as the signal line, or a buffer layer of an oxide layer including aluminum is formed in a contact hole exposing the signal line during the formation of the contact hole. Accordingly, the contact characteristic between an upper layer including indium tin oxide (“ITO”) or indium zinc oxide (“IZO”) and the signal line may be improved to enhance the adhesion therebetween while not increasing the production cost of the thin film transistor (“TFT”) array panel.
摘要翻译：在形成包括铝的信号线之后，在相同的室中形成包含覆盖信号线的铝的氧化物层的上层，并且通过使用与信号线相同的溅射靶，或者包括铝的氧化物层的缓冲层形成在接触孔形成期间暴露信号线的接触孔中。因此，可以改善包括氧化铟锡（“ITO”）或氧化铟锌（“IZO”）的上层与信号线之间的接触特性，以增强其之间的粘附，同时不增加薄膜晶体管的生产成本（“TFT”）阵列面板。

4. 发明申请

US20090115066A1 Metal wiring layer and method of fabricating the same 有权
标题翻译：金属布线层及其制造方法
公开(公告)号：US20090115066A1
公开(公告)日：2009-05-07
申请号：US12290594
申请日：2008-10-31
申请人： Dong-Ju Yang , Shin-Il Choi , Sang-Gab Kim , Min-Seok Oh , Hong-Kee Chin , Ki-Yeup Lee , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Dong-Ju Yang , Shin-Il Choi , Sang-Gab Kim , Min-Seok Oh , Hong-Kee Chin , Ki-Yeup Lee , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L23/535 , H01L21/768
CPC分类号： H01L23/535 , H01L21/743 , H01L27/1218 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： A metal wiring layer and a method of fabricating the metal wiring layer are provided. The method includes forming a dielectric layer on a substrate, forming a plurality of dielectric layer patterns and holes therein on the substrate by etching part of the dielectric layer, with a cross sectional area of the holes in the dielectric layer patterns decreasing with increasing distance away from the substrate and the holes exposing the substrate, forming a trench by etching a portion of the substrate exposed through the holes in the dielectric layer patterns, and forming a metal layer which fills the trench and the holes in the dielectric layer patterns. Thus, it is possible to prevent the occurrence of an edge build-up phenomenon by forming a metal layer in a plurality of holes in the dielectric layer patterns having a cross sectional area decreasing with increasing distance away from the substrate. Therefore, it is possible to prevent the transmittance of a liquid crystal layer from decreasing due to a failure to properly fill liquid crystal molecules in the liquid crystal layer, and thus to increase the quality of display.
摘要翻译：提供金属布线层和制造金属布线层的方法。该方法包括在衬底上形成电介质层，通过蚀刻介电层的一部分，在衬底上形成多个介电层图案和孔，电介质层图案中的孔的横截面积随距离的增加而减小从衬底和暴露衬底的孔，通过蚀刻通过介电层图案中的孔暴露的衬底的一部分形成沟槽，以及形成填充沟槽和介电层图案中的空穴的金属层。因此，可以通过在电介质层图案中的多个孔中形成金属层来防止边缘积聚现象的发生，该电介质层图案的横截面积随离开距衬底的距离的增加而减小。因此，可以防止液晶层的透射率由于不能适当地填充液晶层中的液晶分子而降低，从而提高显示质量。

5. 发明授权

US08211797B2 Metal wiring layer and method of fabricating the same 有权
标题翻译：金属布线层及其制造方法
公开(公告)号：US08211797B2
公开(公告)日：2012-07-03
申请号：US12290594
申请日：2008-10-31
申请人： Dong-Ju Yang , Shin-Il Choi , Sang-Gab Kim , Min-Seok Oh , Hong-Kee Chin , Ki-Yeup Lee , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Dong-Ju Yang , Shin-Il Choi , Sang-Gab Kim , Min-Seok Oh , Hong-Kee Chin , Ki-Yeup Lee , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L21/44
CPC分类号： H01L23/535 , H01L21/743 , H01L27/1218 , H01L27/124 , H01L2924/0002 , H01L2924/00
摘要： A metal wiring layer and a method of fabricating the metal wiring layer are provided. The method includes forming a dielectric layer on a substrate, forming a plurality of dielectric layer patterns and holes therein on the substrate by etching part of the dielectric layer, with a cross sectional area of the holes in the dielectric layer patterns decreasing with increasing distance away from the substrate and the holes exposing the substrate, forming a trench by etching a portion of the substrate exposed through the holes in the dielectric layer patterns, and forming a metal layer which fills the trench and the holes in the dielectric layer patterns. Thus, it is possible to prevent the occurrence of an edge build-up phenomenon by forming a metal layer in a plurality of holes in the dielectric layer patterns having a cross sectional area decreasing with increasing distance away from the substrate. Therefore, it is possible to prevent the transmittance of a liquid crystal layer from decreasing due to a failure to properly fill liquid crystal molecules in the liquid crystal layer, and thus to increase the quality of display.
摘要翻译：提供金属布线层和制造金属布线层的方法。该方法包括在衬底上形成电介质层，通过蚀刻介电层的一部分，在衬底上形成多个介电层图案和孔，电介质层图案中的孔的横截面积随距离的增加而减小从衬底和暴露衬底的孔，通过蚀刻通过介电层图案中的孔暴露的衬底的一部分形成沟槽，以及形成填充沟槽和介电层图案中的空穴的金属层。因此，可以通过在电介质层图案中的多个孔中形成金属层来防止边缘积聚现象的发生，该电介质层图案的横截面积随离开距衬底的距离的增加而减小。因此，可以防止液晶层的透射率由于不能适当地填充液晶层中的液晶分子而降低，从而提高显示质量。

6. 发明申请

US20090173446A1 SUBSTRATE SUPPORT, SUBSTRATE PROCESSING APPARATUS INCLUDING SUBSTRATE SUPPORT, AND METHOD OF ALIGNING SUBSTRATE 审中-公开
标题翻译：基板支撑，基板加工装置，包括基板支撑，以及基板对准方法
公开(公告)号：US20090173446A1
公开(公告)日：2009-07-09
申请号：US12347779
申请日：2008-12-31
申请人： Dong-Ju Yang , Min-Seok Oh , Ki-Yeup Lee , Sang-Gab Kim , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi , Jae-Ho Jang
发明人： Dong-Ju Yang , Min-Seok Oh , Ki-Yeup Lee , Sang-Gab Kim , Shin-Il Choi , Hong-Kee Chin , Yu-Gwang Jeong , Seung-Ha Choi , Jae-Ho Jang
IPC分类号： C23F1/08 , C23C16/513 , H01L21/68
CPC分类号： H01L21/68 , B65G49/065 , B65G2249/02 , C23C16/4585 , C23C16/4586 , H01J37/20 , H01J37/32743 , H01J2237/0206 , H01J2237/204 , H01L21/6831
摘要： The present invention relates to a substrate support that facilitates aligning a substrate and prevents the substrate from being damaged by arc discharge in processing a substrate using plasma, a substrate processing apparatus including the substrate support, and a method of aligning the substrate. A substrate support, which includes a main body on which a substrate is placed and a subsidiary body disposed around the side of the main body and having a slope declining from a position above the main body to the upper side of the main body, is provided, such that it is easy to align the substrate and it is possible to damage due to arc discharge in processing the substrate using plasma.
摘要翻译：本发明涉及一种基板支撑件，其有助于基板的对准，并且防止基板在使用等离子体的基板的处理中被电弧放电所损坏，基板处理装置包括基板支撑件以及对准基板的方法。提供了一种基板支撑件，其包括其上放置基板的主体和设置在主体侧面并且具有从主体上方到主体上方的位置下降的斜面的辅助主体，，使得易于对准衬底，并且可以在使用等离子体处理衬底时由于电弧放电而损坏。

7. 发明授权

US08642367B2 Thin film transistor having improved manufacturability and method for manufacturing a display panel containing same 失效
标题翻译：具有改进的可制造性的薄膜晶体管和用于制造包含它的显示面板的方法
公开(公告)号：US08642367B2
公开(公告)日：2014-02-04
申请号：US13042348
申请日：2011-03-07
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L21/02
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

8. 发明授权

US08247815B2 Thin film transistor, and display apparatus having the same 有权
标题翻译：薄膜晶体管及其显示装置
公开(公告)号：US08247815B2
公开(公告)日：2012-08-21
申请号：US12900634
申请日：2010-10-08
申请人： Shin-Il Choi , Sang-Gab Kim , Hong-Kee Chin , Min-Seok Oh , Yu-Gwang Jeong , Seung-Ha Choi
发明人： Shin-Il Choi , Sang-Gab Kim , Hong-Kee Chin , Min-Seok Oh , Yu-Gwang Jeong , Seung-Ha Choi
IPC分类号： H01L29/04 , H01L31/20 , H01L31/036 , H01L31/0376
CPC分类号： H01L27/124 , H01L29/458 , H01L29/66765
摘要： A method of fabricating a thin film transistor includes forming a gate electrode on a substrate, forming a semiconductor layer on the gate electrode, forming a source electrode on the semiconductor layer, forming a drain electrode on the semiconductor layer spaced apart from the source electrode, forming a copper layer pattern on the source electrode and the drain electrode, exposing the copper layer pattern on the source electrode and the drain electrode to a fluorine-containing process gas to form a copper fluoride layer pattern thereon, and patterning the semiconductor layer.
摘要翻译：一种薄膜晶体管的制造方法，包括在基板上形成栅电极，在栅电极上形成半导体层，在半导体层上形成源电极，在与源电极间隔开的半导体层上形成漏电极，在源电极和漏电极上形成铜层图案，将源电极和漏电极上的铜层图案暴露于含氟处理气体，以在其上形成氟化铜层图案，并对该半导体层进行构图。

9. 发明申请

US20110159622A1 THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING A DISPLAY PANEL 失效
标题翻译：薄膜晶体管和制造显示面板的方法
公开(公告)号：US20110159622A1
公开(公告)日：2011-06-30
申请号：US13042348
申请日：2011-03-07
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L33/62
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

10. 发明授权

US07923732B2 Thin film transistor and method for manufacturing a display panel 有权
标题翻译：薄膜晶体管及制造显示面板的方法
公开(公告)号：US07923732B2
公开(公告)日：2011-04-12
申请号：US12331361
申请日：2008-12-09
申请人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
发明人： Yu-Gwang Jeong , Young-Wook Lee , Sang-Gab Kim , Woo-Geun Lee , Min-Seok Oh , Jang-Soo Kim , Kap-Soo Yoon , Shin-Il Choi , Hong-Kee Chin , Seung-Ha Choi , Seung-Hwan Shim , Sung-Hoon Yang , Ki-Hun Jeong
IPC分类号： H01L29/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L27/1259 , H01L27/1288 , H01L29/66765
摘要： Embodiments of the present invention relate to a thin film transistor and a manufacturing method of a display panel, and include forming a gate line including a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, forming an intrinsic semiconductor on the gate insulating layer, forming an extrinsic semiconductor on the intrinsic semiconductor, forming a data line including a source electrode and a drain electrode on the extrinsic semiconductor, and plasma-treating a portion of the extrinsic semiconductor between the source electrode and the drain electrode to form a protection member and ohmic contacts on respective sides of the protection member. Accordingly, the process for etching the extrinsic semiconductor and forming an inorganic insulating layer for protecting the intrinsic semiconductor may be omitted such that the manufacturing process of the display panel may be simplified, manufacturing cost may be reduced, and productivity may be improved.
摘要翻译：本发明的实施例涉及薄膜晶体管和显示面板的制造方法，包括在基板上形成包括栅电极的栅极线，在栅电极上形成栅绝缘层，在栅电极上形成本征半导体栅极绝缘层，在本征半导体上形成非本征半导体，在外部半导体上形成包括源电极和漏电极的数据线，以及对源电极和漏极之间的非本征半导体的一部分进行等离子体处理，以形成保护构件和保护构件的相应侧上的欧姆接触。因此，可以省略用于蚀刻外部半导体和形成用于保护本征半导体的无机绝缘层的工艺，从而可以简化显示面板的制造工艺，可以降低制造成本，并且可以提高生产率。

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