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1. 发明申请

US20080153293A1 SILICON CARBIDE POLISHING METHOD UTILIZING WATER-SOLUBLE OXIDIZERS 审中-公开
标题翻译：使用水溶性氧化剂的碳化硅抛光方法
公开(公告)号：US20080153293A1
公开(公告)日：2008-06-26
申请号：US12042872
申请日：2008-03-05
申请人： Mukesh Desai , Kevin Moeggenborg , Phillip Carter
发明人： Mukesh Desai , Kevin Moeggenborg , Phillip Carter
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , H01L21/02024 , H01L29/1608
摘要： The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
摘要翻译：本发明的方法包括用包含液体载体，研磨剂和氧化剂的抛光组合物对包含至少一层碳化硅的基材进行化学机械抛光。

2. 发明授权

US07678700B2 Silicon carbide polishing method utilizing water-soluble oxidizers 有权
标题翻译：使用水溶性氧化剂的碳化硅抛光方法
公开(公告)号：US07678700B2
公开(公告)日：2010-03-16
申请号：US11515546
申请日：2006-09-05
申请人： Mukesh Desai , Kevin Moeggenborg , Phillip Carter
发明人： Mukesh Desai , Kevin Moeggenborg , Phillip Carter
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C09G1/02 , H01L21/02024 , H01L29/1608
摘要： The inventive method comprises chemically-mechanically polishing a substrate comprising at least one layer of silicon carbide with a polishing composition comprising a liquid carrier, an abrasive, and an oxidizing agent.
摘要翻译：本发明的方法包括用包括液体载体，研磨剂和氧化剂的抛光组合物化学机械抛光包含至少一层碳化硅的基材。

3. 发明授权

US06776810B1 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US06776810B1
公开(公告)日：2004-08-17
申请号：US10073844
申请日：2002-02-11
申请人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
发明人： Isaac K. Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： C09G102
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides a chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged electrolyte.
摘要翻译：本发明提供一种化学机械抛光系统，以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或更多，其中所述磨料包含与带正电荷的电解液静电相关的颗粒。

4. 发明授权

US07306637B2 Anionic abrasive particles treated with positively charged polyelectrolytes for CMP 有权
标题翻译：用带正电荷的聚电解质处理的阴离子磨料颗粒用于CMP
公开(公告)号：US07306637B2
公开(公告)日：2007-12-11
申请号：US10855276
申请日：2004-05-27
申请人： Isaac K Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
发明人： Isaac K Cherian , Phillip Carter , Jeffrey P. Chamberlain , Kevin Moeggenborg , David W. Boldridge
IPC分类号： C09G1/02 , C09G1/04 , B24B1/00
CPC分类号： C09K3/1454 , B24B37/044 , B24B37/046 , C09G1/02 , C09K3/1436
摘要： The invention provides chemical-mechanical polishing systems, and methods of polishing a substrate using the polishing systems, comprising (a) an abrasive, (b) a liquid carrier, and (c) a positively charged polyelectrolyte with a molecular weight of about 15,000 or more, wherein the abrasive comprises particles that are electrostatically associated with the positively charged polyelectrolyte.
摘要翻译：本发明提供化学机械抛光系统以及使用抛光系统抛光衬底的方法，其包括（a）研磨剂，（b）液体载体和（c）分子量为约15,000的带正电荷的聚电解质或其中磨料包含与带正电荷的聚电解质静电相关的颗粒。

5. 发明申请

US20070117497A1 Friction reducing aid for CMP 审中-公开
标题翻译： CMP减摩助剂
公开(公告)号：US20070117497A1
公开(公告)日：2007-05-24
申请号：US11287039
申请日：2005-11-22
申请人： Kevin Moeggenborg , Phillip Carter
发明人： Kevin Moeggenborg , Phillip Carter
IPC分类号： B24B1/00 , B24B29/00
CPC分类号： B24B37/042 , B24B37/0056 , B24B57/02
摘要： The invention provides a chemical-mechanical polishing system for polishing a substrate comprising a polishing component, a water-soluble silicate compound, an oxidizing agent, and water, wherein the pH of the polishing system is about 8 to about 12. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing system. The polishing system provides for reduced friction during polishing of substrates.
摘要翻译：本发明提供了一种用于抛光包括抛光组分，水溶性硅酸盐化合物，氧化剂和水的基材的化学机械抛光系统，其中抛光系统的pH为约8至约12.本发明还提供用上述抛光系统对衬底进行化学机械抛光的方法。抛光系统在抛光基材期间提供减少的摩擦。

6. 发明授权

US07677956B2 Compositions and methods for dielectric CMP 有权
标题翻译：电介质CMP的组成和方法
公开(公告)号：US07677956B2
公开(公告)日：2010-03-16
申请号：US10142681
申请日：2002-05-10
申请人： Phillip Carter , Gregory H Bogush , Farhana Khan , Timothy P Johns , Robert Vacassy
发明人： Phillip Carter , Gregory H Bogush , Farhana Khan , Timothy P Johns , Robert Vacassy
IPC分类号： B24B1/00 , B24B7/19 , B24B7/30 , B24B7/22
CPC分类号： B24B37/0056 , B24B37/044 , C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/31053
摘要： The invention is directed to a chemical-mechanical polishing composition comprising (a) an abrasive consisting essentially of aggregated silica, (b) an acid, and (c) a liquid carrier, wherein the polishing composition has a pH of about 5 or less. The invention is also directed to a method of polishing a substrate comprising a dielectric layer using the polishing composition.
摘要翻译：本发明涉及一种化学机械抛光组合物，其包含（a）主要由聚集的二氧化硅组成的磨料，（b）酸和（c）液体载体，其中所述抛光组合物具有约5或更低的pH。本发明还涉及使用抛光组合物抛光包括电介质层的基底的方法。

7. 发明申请

US20070190789A1 Compositions and methods for CMP of indium tin oxide surfaces 审中-公开
标题翻译：氧化铟锡表面CMP的组成和方法
公开(公告)号：US20070190789A1
公开(公告)日：2007-08-16
申请号：US11706929
申请日：2007-02-14
申请人： Phillip Carter , Nevin Naguib , Fred Sun
发明人： Phillip Carter , Nevin Naguib , Fred Sun
IPC分类号： H01L21/461 , C03C15/00
CPC分类号： H01L31/1884 , C09G1/02 , C09K3/1463 , H01L51/442 , H01L51/5206 , Y02E10/50
摘要： The present invention provides chemical-mechanical polishing (CMP) compositions and methods for polishing an ITO surface. The compositions of the invention comprise a particulate zirconium oxide or colloidal silica abrasive, which has a mean particle size of not more than about 150 nm, suspended in an aqueous carrier, which preferably has a pH of not more than about 5. Preferably, the abrasive has a surface area in the range of about 40 to about 220 m2/g. The CMP compositions of the invention provide an acceptably low surface roughness when used to polish an ITO surface, providing clean and uniform surfaces.
摘要翻译：本发明提供化学机械抛光（CMP）组合物和抛光ITO表面的方法。本发明的组合物包含悬浮在水性载体中的平均粒径不超过约150nm的颗粒状氧化锆或胶体二氧化硅磨料，其优选具有不超过约5的pH。优选地，研磨剂的表面积在约40至约220平方米/克的范围内。当用于抛光ITO表面时，本发明的CMP组合物提供可接受的低表面粗糙度，提供清洁且均匀的表面。

8. 发明申请

US20060131952A1 Brake fluid cooling system 有权
标题翻译：制动液冷却系统
公开(公告)号：US20060131952A1
公开(公告)日：2006-06-22
申请号：US11015530
申请日：2004-12-17
申请人： Del Richardson , Harry Richardson , Phillip Carter
发明人： Del Richardson , Harry Richardson , Phillip Carter
IPC分类号： B60T13/16
CPC分类号： F16D65/853 , F16D2065/782
摘要： The brake fluid cooling systems may be used for cooling the brake fluid in a hydraulic brake system. A pump may have an outlet port in fluid communication by a first conduit with a pressure port of a brake wherein there may be a check valve in the first conduit oriented to allow flow from the pump and not to the pump. A bleed port of the brake in fluid communication with a master brake cylinder. The master brake cylinder in fluid communication with an inlet port of the pump.
摘要翻译：制动液冷却系统可用于在液压制动系统中冷却制动液。泵可以具有通过具有制动器的压力端口的第一管道流体连通的出口端口，其中可以在第一管道中存在取决于允许从泵而不是泵流动的止回阀。与主制动缸流体连通的制动器的排气口。主制动缸与泵的入口流体连通。

9. 发明申请

US20060030158A1 Compositions and methods for tantalum CMP 有权
标题翻译：钽CMP的组成和方法
公开(公告)号：US20060030158A1
公开(公告)日：2006-02-09
申请号：US11235765
申请日：2005-09-26
申请人： Phillip Carter , Jian Zhang , Steven Grumbine , Francesco Rege Thesauro
发明人： Phillip Carter , Jian Zhang , Steven Grumbine , Francesco Rege Thesauro
IPC分类号： B24B1/00 , C09K3/14 , H01L21/461
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , C09K3/1463 , C23F3/04 , C23F3/06
摘要： A composition suitable for tantalum chemical-mechanical polishing (CMP) comprises an abrasive, an organic oxidizer, and a liquid carrier therefor. The organic oxidizer has a standard redox potential (E0) of not more than about 0.5 V relative to a standard hydrogen electrode. The oxidized form comprises at least one pi-conjugated ring, which includes at least one heteroatom directly attached to the ring. The heteroatom can be a N, O, S or a combination thereof. In a method embodiment, a CMP composition comprising an abrasive, and organic oxidizer having an E0 of not more than about 0.7 V relative to a standard hydrogen electrode, and a liquid carrier therefor, is utilized to polish a tantalum-containing surface of a substrate, by abrading the surface of the substrate with the composition, preferably with the aid of a polishing pad.
摘要翻译：适用于钽化学机械抛光（CMP）的组合物包括研磨剂，有机氧化剂和用于其的液体载体。有机氧化剂相对于标准氢电极具有不超过约0.5V的标准氧化还原电位（E 0 SUP 0）。氧化形式包含至少一个π-共轭环，其包括至少一个直接连接在环上的杂原子。杂原子可以是N，O，S或它们的组合。在方法实施方案中，使用包含磨料和相对于标准氢电极不超过约0.7V的E 0有机氧化剂的CMP组合物及其液体载体来抛光通过用组合物研磨基底的表面，优选借助于抛光垫，将基底的含钽表面。

10. 发明申请

US20050060838A1 Vacuum cleaner current-carrying hose connection system 有权
标题翻译：真空吸尘器带电软管接头系统
公开(公告)号：US20050060838A1
公开(公告)日：2005-03-24
申请号：US10665127
申请日：2003-09-22
申请人： Scott Walter , Phillip Carter , Bradley Madu
发明人： Scott Walter , Phillip Carter , Bradley Madu
IPC分类号： A47L9/24 , A47L5/38
CPC分类号： A47L9/246
摘要： A vacuum cleaner current-carrying hose connection system is disclosed having a female connection end on a first vacuum cleaner current-carrying hose adapted for receiving a male connection end on a second vacuum cleaner current-carrying hose. The male connection has at least two male receptor plugs configured for inserting into female receptor holes in the female connection end. A vacuum cleaner hose connection system is further disclosed having a male connection end that has at least two male receptor plugs for transmitting current, a female connection end having at least two female receptor holes for receiving the male receptor plugs, and the male and female connection ends being rotatably movable, about the longitudinal axis of at least one of the female connection end and the male connection end, between an unengaged position and an engaged position.
摘要翻译：公开了一种真空吸尘器电流输送软管连接系统，其在第一真空吸尘器载流软管上具有阴连接端，适于在第二真空吸尘器载流软管上接收阳连接端。阳连接件具有至少两个配置用于插入阴连接端的阴接收孔中的阳接收器插头。进一步公开了一种真空吸尘器软管连接系统，其具有阳连接端，该阳连接端具有用于传输电流的至少两个阳接收器插头，具有至少两个用于接纳阳接收插头的阴接收孔的阴连接端，以及阳和阴连接末端可以在未接合位置和接合位置之间围绕阴连接端和阳连接端中的至少一个的纵向轴线可旋转地移动。

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