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1. 发明授权

US10361340B2 Light emitting element and light emitting device 有权
公开(公告)号：US10361340B2
公开(公告)日：2019-07-23
申请号：US15695362
申请日：2017-09-05
申请人： NICHIA CORPORATION
发明人： Koichi Takenaga , Keiji Emura
IPC分类号： H01L33/32 , H01L33/20 , H01L33/38 , H01L33/50 , H01L33/58 , H01L33/40 , H01L33/44 , H01L33/62
摘要： A light emitting element includes an n-side semiconductor layer, a p-side semiconductor layer, a plurality of holes, a first p-electrode, a second p-electrode and an n-electrode. The n-side semiconductor layer has a hexagonal shape in plan view. The p-side semiconductor layer has a hexagonal shape in plan view and provided over the n-side semiconductor layer. The holes are arranged in the p-side semiconductor layer so that the n-side semiconductor layer is exposed through the plurality of holes. The first p-electrode is in contact with the p-side semiconductor layer. The second p-electrode is arranged on the first p-electrode adjacent to a corner corresponding to one of vertices of the hexagonal shape. The second p-electrode has sides that are respectively parallel to sides defining the corner in plan view. The n-electrode is arranged over the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

2. 发明授权

US10903407B2 Semiconductor light emitting element 有权
公开(公告)号：US10903407B2
公开(公告)日：2021-01-26
申请号：US16526895
申请日：2019-07-30
申请人： Nichia Corporation
发明人： Yasuhiro Miki , Koichi Takenaga
IPC分类号： H01L33/38 , H01L33/62 , H01L33/36
摘要： A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at at least four corners of the outer peripheral region of the n-side semiconductor layer.

3. 发明授权

US09461210B2 Light emitting element and light emitting device using the same 有权
标题翻译：发光元件及其使用的发光元件
公开(公告)号：US09461210B2
公开(公告)日：2016-10-04
申请号：US14669345
申请日：2015-03-26
申请人： NICHIA CORPORATION
发明人： Koichi Takenaga , Hirofumi Kawaguchi , Kazuki Kashimoto
IPC分类号： H01L33/00 , H01L33/38 , H01L33/62 , H01L33/40 , H01L33/44 , H01L33/54
CPC分类号： H01L33/387 , H01L33/382 , H01L33/40 , H01L33/44 , H01L33/54 , H01L33/62
摘要： A light emitting element includes a semiconductor stacked layer body having an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order, and a plurality of exposed portions defined at an upper surface side of the semiconductor stacked layer body, the plurality of exposed portions respectively exposing a part of the n-type semiconductor layer, a p-side electrode arranged in a first region and electrically connected with an upper surface of the p-type semiconductor layer and, arranged at one corner above the p-type semiconductor layer in a plan view, and an n-side electrode electrically integrally connected to the plurality of exposed portions and arranged in a different region in a plan view. In a plan view, the semiconductor stacked layer body has a rectangular shape and the plurality of exposed portions includes, a plurality of first exposed portions arranged at substantially equal intervals along a side of the semiconductor stacked layer body and a plurality of second exposed portions arranged closer to the p-side electrode than the first exposed portions are to the p-side electrode. The plurality of second exposed portions include at least one second exposed portion which has a shortest distance to the first exposed portions, the shortest distance to the first exposed portions being longer than a shortest distance among the first exposed portions. The at least one second exposed portion also has a shortest distance to the p-side electrode shorter than the shortest distance among the first exposed portions.
摘要翻译：发光元件依次包括具有n型半导体层，有源层和p型半导体层的半导体叠层体，以及限定在半导体层叠层的上表面侧的多个露出部所述多个曝光部分分别暴露所述n型半导体层的一部分，布置在第一区域中并与p型半导体层的上表面电连接的p侧电极，并且布置在平面图中的p型半导体层和与多个暴露部分电连接并且以平面图形式布置在不同区域中的n侧电极。在平面图中，半导体层叠体具有矩形形状，并且多个露出部分包括沿着半导体堆叠层主体的侧面以大致相等的间隔布置的多个第一暴露部分和多个第二暴露部分，比p侧电极更靠近p侧电极。多个第二暴露部分包括至少一个与第一暴露部分具有最短距离的第二暴露部分，第一暴露部分的最短距离比第一暴露部分中的最短距离长。所述至少一个第二暴露部分也具有比所述第一暴露部分中的最短距离短的至p侧电极的最短距离。

4. 发明授权

US11417811B2 Light emitting element, light emitting device, and method for manufacturing light emitting element 有权
公开(公告)号：US11417811B2
公开(公告)日：2022-08-16
申请号：US16717305
申请日：2019-12-17
申请人： NICHIA CORPORATION
发明人： Koichi Takenaga , Takanori Fukumori , Satoshi Shichijo , Hiroki Fukuta , Kunihito Sugimoto
IPC分类号： H01L33/62 , H01L33/32 , H01L33/44 , H01L33/38 , H01L33/60 , H01L33/00 , H01L33/56 , H01L33/40 , H01L33/64 , H01L27/15 , H01L33/20 , H01L25/075
摘要： A light emitting element includes a semiconductor stacked body, an insulating film, first and second electrodes, a second external connection portion, and first external connection portions. The first semiconductor layer is exposed at a plurality of exposed portions disposed in a plurality of rows in plan view. The first external connection portions include at least one smaller-size first external connection portion disposed between adjacent ones of the rows other than the outermost one of the rows, and at least one larger-size first external connection portion extending from the end region, in which a spacing between a first outer edge of a second semiconductor layer and the exposed portions in the outermost one of the rows is narrower than a spacing between the exposed portions in adjacent ones of the rows, to at least a position between the outermost one of the rows and an adjacent one of the rows.

5. 发明授权

US09786812B2 Light emitting element and light emitting device 有权
公开(公告)号：US09786812B2
公开(公告)日：2017-10-10
申请号：US15204395
申请日：2016-07-07
申请人： NICHIA CORPORATION
发明人： Koichi Takenaga , Keiji Emura
IPC分类号： H01L33/20 , H01L33/38 , H01L33/50 , H01L33/58 , H01L33/40 , H01L33/44 , H01L33/62
CPC分类号： H01L33/20 , H01L33/38 , H01L33/382 , H01L33/387 , H01L33/405 , H01L33/44 , H01L33/50 , H01L33/58 , H01L33/62
摘要： A light emitting element with a hexagonal planar shape, has: an n-side semiconductor layer; a p-side semiconductor layer provided on the n-side semiconductor layer; a plurality of holes that are provided to an area excluding three corners at mutually diagonal positions of the p-side semiconductor layer in plan view, and expose the n-side semiconductor layer; a first p-electrode provided in contact with the p-side semiconductor layer; second p-electrodes provided to three corners on the first p-electrode; and an n-electrode that is provided on the first p-electrode and is electrically connected to the n-side semiconductor layer through the plurality of holes.

6. 发明授权

US11271146B2 Semiconductor light emitting element 有权
公开(公告)号：US11271146B2
公开(公告)日：2022-03-08
申请号：US17115082
申请日：2020-12-08
申请人： NICHIA CORPORATION
发明人： Yasuhiro Miki , Koichi Takenaga
IPC分类号： H01L33/38 , H01L33/62 , H01L33/36
摘要： A semiconductor light emitting element includes a semiconductor layered body including an n-side semiconductor layer and a p-side semiconductor layer disposed above the n-side semiconductor layer, an insulating film defining a plurality of first n-side openings on the n-side semiconductor layer in an inner region and a plurality of second n-side openings on an outer peripheral region of the n-side semiconductor layer, an n-electrode disposed extending over the insulating film and the outer peripheral region of the n-side semiconductor layer and including: a plurality of first n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the first n-side openings, and a plurality of second n-contact portions, each electrically connected with the n-side semiconductor layer through a respective one of the second n-side openings, at the outer peripheral region of the n-side semiconductor layer.

7. 发明授权

US11024770B2 Light emitting element and light emitting device 有权
公开(公告)号：US11024770B2
公开(公告)日：2021-06-01
申请号：US16123274
申请日：2018-09-06
申请人： NICHIA CORPORATION
发明人： Satoshi Shichijo , Hiroki Fukuta , Kunihito Sugimoto , Yasuhiro Miki , Koichi Takenaga
IPC分类号： H01L33/38 , H01L23/532 , H01L33/10 , H01L33/62 , H01L33/40 , H01L33/32 , H01L33/50 , H01L33/54 , H01L33/44
摘要： A light emitting element includes a semiconductor layered body, an insulating film, first and second electrodes, and first and second external connection parts. The first semiconductor layer is exposed from the light emitting layer and the second semiconductor layer at exposed portions arranged in columns each extending in a first direction. The insulating film defines openings respectively located above the exposed portions. The first electrode is connected to the first semiconductor layer through the openings and covers a part of the second semiconductor layer via the insulating film. The first external connection part is connected to the first electrode and spaced apart from the exposed portions in the plan view. The first external connection part has a shape elongated in the first direction between adjacent ones of the columns of the exposed portions. The second external connection part is connected to the second semiconductor layer via the second electrode.

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