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1. 发明申请

US20230138592A1 METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT 有权
公开(公告)号：US20230138592A1
公开(公告)日：2023-05-04
申请号：US17964034
申请日：2022-10-12
申请人： NICHIA CORPORATION , HAMAMATSU PHOTONICS K.K.
发明人： Naoto INOUE , Minoru YAMAMOTO , Taichi OKUBO , Hiroaki TAMEMOTO , Ryota SUGIO , Yusuke SEKIMOTO
IPC分类号： H01L33/00
摘要： A method for manufacturing a light-emitting element includes preparing a wafer; a laser beam irradiation process; and a separation process. The laser beam irradiation process includes a first irradiation process of forming a plurality of first modified portions, and a second irradiation process of forming a plurality of second modified portions. The second modified portions are formed in the second irradiation process so that a length in a thickness direction of the sapphire substrate of the second modified portions is greater than a length in the thickness direction of the first modified portions.

2. 发明申请

US20220371130A1 LASER PROCESSING DEVICE, AND METHOD FOR MANUFACTURING CHIP 有权
公开(公告)号：US20220371130A1
公开(公告)日：2022-11-24
申请号：US17763379
申请日：2020-08-07
申请人： NICHIA CORPORATION , HAMAMATSU PHOTONICS K.K.
发明人： Hiroaki TAMEMOTO , Minoru YAMAMOTO , Yusuke SEKIMOTO , Ryota SUGIO , Tominori NAKAMURA
IPC分类号： B23K26/53 , B23K26/046 , B23K26/0622
摘要： This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an in-axis direction of the sapphire substrate.

3. 发明申请

US20180247871A1 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT 审中-公开
公开(公告)号：US20180247871A1
公开(公告)日：2018-08-30
申请号：US15902756
申请日：2018-02-22
申请人： NICHIA CORPORATION
发明人： Naoto INOUE , Sho KUSAKA , Minoru YAMAMOTO , Masayuki IBARAKI , Hiroaki TAMEMOTO
IPC分类号： H01L21/78 , H01L33/00
摘要： A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.

4. 发明公开

US20230387344A1 METHOD OF PRODUCING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20230387344A1
公开(公告)日：2023-11-30
申请号：US18310002
申请日：2023-05-01
申请人： NICHIA CORPORATION
发明人： Yoshiki YAMAGUCHI , Hiroki HAYASHI , Satoshi OKUMURA , Minoru YAMAMOTO , Hiroaki TAMEMOTO
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , H01L2933/0066
摘要： A method of producing a semiconductor device, the method includes steps of: detecting a defect included in a semiconductor layer; forming a metal film on the semiconductor layer; after forming the metal film on the semiconductor layer, exposing the semiconductor layer through the metal film by removing a portion of the metal film by irradiation with a first laser emitting red or infrared light; and after the step of exposing the semiconductor layer, removing a portion of the semiconductor layer by irradiation with a second laser emitting ultraviolet light, said portion of the semiconductor layer including the defect. A diameter of said portion of the metal film is greater than a diameter of said portion of the semiconductor layer in a plan view. Said portion of the metal film overlaps with said portion of the semiconductor layer in the plan view.

5. 发明申请

US20210005777A1 METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT 有权
公开(公告)号：US20210005777A1
公开(公告)日：2021-01-07
申请号：US16908354
申请日：2020-06-22
申请人： NICHIA CORPORATION
发明人： Naoto INOUE , Minoru YAMAMOTO , Satoshi OKUMURA , Hiroki OKAMOTO , Hiroaki TAMEMOTO
IPC分类号： H01L33/00
摘要： A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating CO2 laser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

6. 发明申请

US20150357514A1 METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT 有权
标题翻译：制造发光元件的方法
公开(公告)号：US20150357514A1
公开(公告)日：2015-12-10
申请号：US14830145
申请日：2015-08-19
申请人： NICHIA CORPORATION
发明人： Hiroaki TAMEMOTO
IPC分类号： H01L33/00
CPC分类号： H01L33/0075 , H01L33/0066 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/10 , H01L33/12 , H01L33/20 , H01L33/22 , H01L33/32 , H01L2933/0033
摘要： A method for manufacturing a light emitting element includes: preparing a wafer that has a substrate in which a first main face is provided with a plurality of convex components; and dividing the wafer along first dividing lines and second dividing lines. The convex components are in the form of circular cones or truncated circular cones, each of which having a circular bottom face and a side face that is connected to the bottom face, and disposed regularly so that a plurality of bounded regions are present around the convex components, and a shortest distance between the convex components and the centers of the bounded regions is less than a radius of the bottom faces of the convex components. The first and second dividing lines extend in a direction that intersects straight lines that link the centers of the plurality of bounded regions around a single convex component.
摘要翻译：一种发光元件的制造方法，包括：准备具有基板的晶片，所述基板的第一主面设置有多个凸部; 并且沿着第一分割线和第二分割线分割晶片。凸形部件为圆锥体或截头圆锥体的形式，每个圆锥体具有圆形底面和连接到底面的侧面，并且规则地布置，使得围绕凸部存在多个有界区域凸起部件和有界区域的中心之间的最短距离小于凸部件的底面的半径。第一分割线和第二分割线在与多个有界区域的中心围绕单个凸部分连接的直线相交的方向上延伸。

7. 发明公开

US20240258170A1 METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT 审中-公开
公开(公告)号：US20240258170A1
公开(公告)日：2024-08-01
申请号：US18422925
申请日：2024-01-25
申请人： NICHIA CORPORATION
发明人： Minoru YAMAMOTO , Naoto INOUE , Masayuki IBARAKI , Hiroaki TAMEMOTO
IPC分类号： H01L21/78 , H01L21/428
CPC分类号： H01L21/78 , H01L21/428
摘要： A method of manufacturing a semiconductor element includes irradiating a laser beam on a wafer, which includes a sapphire substrate having a first face and a second face opposite the first face and a semiconductor structure disposed on the first face, from a second face side. The laser beam irradiated along a first direction parallel to the second face of the sapphire substrate is focused inside the sapphire substrate to thereby create a modified portion in the sapphire substrate along the first direction. The wafer is severed and separated into a number of semiconductor elements following the formation of a modified portion. In the step of forming a modified portion, the laser beam is focused closer to the second face than to the first face in a thickness direction of the sapphire substrate.

8. 发明公开

US20240001622A1 METHOD FOR PRODUCING RESIN PART 审中-公开
公开(公告)号：US20240001622A1
公开(公告)日：2024-01-04
申请号：US18343299
申请日：2023-06-28
申请人： Nichia Corporation , Laser Systems Inc.
发明人： Ryota TAOKA , Ryota TAKAO , Minoru YAMAMOTO , Hiroaki TAMEMOTO , Hiroshi YAGUCHI
IPC分类号： B29C65/16 , B23K26/082 , B23K26/324
CPC分类号： B29C65/1661 , B29C65/1638 , B23K26/082 , B23K26/324
摘要： A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.

9. 发明申请

US20210036182A1 METHOD OF MANUFACTURING LIGHT EMITTING ELEMENT 有权
公开(公告)号：US20210036182A1
公开(公告)日：2021-02-04
申请号：US16945729
申请日：2020-07-31
申请人： NICHIA CORPORATION
发明人： Masayuki IBARAKI , Minoru YAMAMOTO , Naoto INOUE , Hiroaki TAMEMOTO
IPC分类号： H01L33/00 , H01L33/20 , H01L25/075
摘要： A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

10. 发明申请

US20150064823A1 METHOD FOR MANUFACTURING LIGHT EMITTING ELEMENT 有权
标题翻译：制造发光元件的方法
公开(公告)号：US20150064823A1
公开(公告)日：2015-03-05
申请号：US14466354
申请日：2014-08-22
申请人： NICHIA CORPORATION
发明人： Hiroaki TAMEMOTO , Chihiro JUASA
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/0095 , H01L33/20 , H01L33/22 , H01L33/32
摘要： A method for manufacturing a light emitting element that includes preparing a wafer having a substrate and a semiconductor structure, the substrate including a plurality of protrusions at positions corresponding to lattice points on a triangular lattice. The method includes forming a plurality of first modified parts in the substrate by irradiating the substrate with a laser beam along first dividing lines, forming a plurality of second modified parts in the substrate by irradiating the substrate with a laser beam along second dividing lines, and dividing the wafer along the first modified parts and the second modified parts to obtain a plurality of light emitting elements.
摘要翻译：一种制造发光元件的方法，其包括制备具有基板和半导体结构的晶片，所述基板在对应于三角形格子上的格子点的位置处包括多个突起。该方法包括通过沿着第一分割线用激光束照射基板，在基板中形成多个第一改质部分，通过沿着第二分割线用激光束照射基板，在基板中形成多个第二改性部分，以及沿着第一修改部分和第二修改部分分割晶片以获得多个发光元件。

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