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1. 发明申请

US20210066548A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
公开(公告)号：US20210066548A1
公开(公告)日：2021-03-04
申请号：US16958579
申请日：2018-10-31
申请人： NIKKISO CO., LTD.
发明人： Mitsugu WADA , Yusuke MATSUKURA , Yuta FURUSAWA
IPC分类号： H01L33/32 , H01L33/40
摘要： A nitride semiconductor light emitting element includes a multi-quantum well layer including AlGaN, and including a plurality of well layers and producing light by combining carriers and emitting deep ultraviolet light with a central wavelength of 250 nm to 350 nm, a metal electrode part including Al that is located above the multi-quantum well layer and reflects a first light that is a part of the light produced by the multi-quantum well layer and travels upward, a multi-stacked semiconductor layer that is located between the multi-quantum well layer and the metal electrode part, includes a plurality of p-type semiconductor layers including p-type AlGaN, and is configured in such a manner that the first light travels out and back therewithin via reflection at the metal electrode part until meeting a second light that is a part of the light produced by the multi-quantum well layer and travels downward, and an ITO contact electrode part provided between the metal electrode part and the multi-quantum well layer, and including an indium tin oxide, wherein a difference in refractive index between a p-type semiconductor layer and a layer adjacent thereto in the multi-stacked semiconductor layer is not more than 0.12, wherein the multi-stacked semiconductor layer and the ITO contact electrode part have a film thickness that allows only the first light after traveling out and back within the multi-stacked semiconductor layer and the ITO contact electrode part via the reflection at the metal electrode part, and the second light to meet in the same phase and exit from a lower side of the multi-quantum well layer.

2. 发明申请

US20210057608A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
公开(公告)号：US20210057608A1
公开(公告)日：2021-02-25
申请号：US16993836
申请日：2020-08-14
申请人： NIKKISO CO., LTD.
发明人： Yusuke MATSUKURA , Tetsuhiko INAZU , Cyril PERNOT
IPC分类号： H01L33/32 , H01L33/14 , H01S5/343
摘要： A nitride semiconductor light-emitting element includes an active layer that emits ultraviolet light, a p-type AlGaN-based electron blocking stack body that is located on the active layer and has a structure formed by sequentially stacking a first electron blocking layer, a second electron blocking layer and a third electron blocking layer from the active layer side, and a p-type contact layer located on the electron blocking stack body. An Al composition ratio in the second electron blocking layer is lower than an Al composition ratio in the first electron blocking layer, and an Al composition ratio in the third electron blocking layer decreases from the second electron blocking layer side toward the p-type contact layer side.

3. 发明申请

US20200279973A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
公开(公告)号：US20200279973A1
公开(公告)日：2020-09-03
申请号：US16645886
申请日：2018-07-31
申请人： NIKKISO CO., LTD.
发明人： Yuta FURUSAWA , Mitsugu WADA , Yusuke MATSUKURA , Cyril PERNOT
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
摘要： A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN having a first Al composition ratio, a barrier layer including AlGaN that is located on the n-type cladding layer side in a multiple quantum well layer and has a second Al composition ratio greater than the first Al composition ratio, and a graded layer that is located between the n-type cladding layer and the barrier layer and has a third Al composition ratio that is between the first Al composition ratio and the second Al composition ratio, wherein the third Al composition ratio of the graded layer increases at a predetermined increase rate from the first Al composition ratio toward the second Al composition ratio.

4. 发明公开

US20230378393A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
公开(公告)号：US20230378393A1
公开(公告)日：2023-11-23
申请号：US18311343
申请日：2023-05-03
申请人： NIKKISO CO., LTD.
发明人： Yusuke MATSUKURA , Cyril PERNOT
IPC分类号： H01L33/02 , H01L33/32 , H01L33/06
CPC分类号： H01L33/025 , H01L33/32 , H01L33/06
摘要： A nitride semiconductor light-emitting element emits ultraviolet light at a central wavelength of more than 320 nm and not more than 365 nm. The nitride semiconductor light-emitting element includes a substrate having a c-plane as a growth surface and a nitride semiconductor layer stacked on the growth surface of the substrate. The nitride semiconductor layer includes an n-type semiconductor layer, and an active layer being formed on the n-type semiconductor layer on the opposite side to the substrate and comprising a single quantum well structure with one well layer. The n-type semiconductor layer has an Al composition ratio of not more than 50% and a film thickness of more than 2 μm. A composition difference obtained by subtracting an Al composition ratio of the well layer from the Al composition ratio of the n-type semiconductor layer is not less than 22%.

5. 发明申请

US20220123174A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
公开(公告)号：US20220123174A1
公开(公告)日：2022-04-21
申请号：US17502161
申请日：2021-10-15
申请人： NIKKISO CO., LTD.
发明人： Yusuke MATSUKURA , Cyril PERNOT
IPC分类号： H01L33/32 , H01L33/04
摘要： A nitride semiconductor light-emitting element outputs ultraviolet light. The nitride semiconductor light-emitting element includes an active layer including a quantum well structure that generates the ultraviolet light, a dislocation suppression structure-containing layer being formed on the active layer and including a dislocation suppression structure that stops or bends a dislocation from the active layer; and a p-type contact layer being formed on the dislocation suppression structure-containing layer and having a thickness of not less than 10 nm and not more than 30 nm.

6. 发明申请

US20200279971A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND PRODUCTION METHOD FOR NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 审中-公开
公开(公告)号：US20200279971A1
公开(公告)日：2020-09-03
申请号：US16645906
申请日：2018-07-31
申请人： NIKKISO CO., LTD.
发明人： Yuta FURUSAWA , Mitsugu WADA , Yusuke MATSUKURA , Cyril PERNOT
IPC分类号： H01L33/00 , H01L33/06 , H01S5/22 , H01S5/32
摘要： A nitride semiconductor light-emitting element includes an n-type cladding layer including n-type AlGaN and having a first Al composition ratio, and a multiple quantum well layer in which a plurality (number N) of barrier layers including AlGaN having a second Al composition ratio more than the first Al composition ratio and a plural (number N) well layers having an Al composition ratio less than the second Al composition ratio are stacked alternately in this order, wherein the second Al composition ratio of the plurality of barrier layers of the multiple quantum well layer increases at a predetermined increase rate from an n-type cladding layer side toward an opposite side to the n-type cladding layer side.

7. 发明申请

US20220384681A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
公开(公告)号：US20220384681A1
公开(公告)日：2022-12-01
申请号：US17736459
申请日：2022-05-04
申请人： NIKKISO CO., LTD.
发明人： Yusuke MATSUKURA , Cyril PERNOT
IPC分类号： H01L33/32 , H01L33/40
摘要： A nitride semiconductor light-emitting element includes a first semiconductor layer; an active layer provided on the first semiconductor layer on one side; a second semiconductor layer provided on the active layer on the opposite side to the first semiconductor layer so as to be in contact with the active layer; and a reflective electrode provided on the second semiconductor layer on the opposite side to the active layer so as to be in contact with the second semiconductor layer and reflects light emitted from the active layer. When an optical film thickness of the second semiconductor layer is an optical film thickness L [nm], a central wavelength of the light emitted from the active layer is a wavelength λ [nm], and an arbitrary number between 1 and 2 is a value m, a relationship 0.48 m λ≤L≤0.5 m λ+(−0.05 m+0.3)λ is satisfied.

8. 发明申请

US20220165915A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
公开(公告)号：US20220165915A1
公开(公告)日：2022-05-26
申请号：US17523011
申请日：2021-11-10
申请人： NIKKISO CO., LTD.
发明人： Kazufumi TAKAO , Yusuke MATSUKURA
IPC分类号： H01L33/16 , H01L33/12 , H01L33/00
摘要： A nitride semiconductor light-emitting element includes a substrate, a buffer layer formed on the substrate, an n-type semiconductor layer formed on the buffer layer, and an active layer being formed on the n-type semiconductor layer and comprising a single quantum well structure. A full width at half maximum of an X-ray rocking curve for a (102) plane of the buffer layer is not less than 369.4 arcsec and not more than 492.5 arcsec.

9. 发明申请

US20220131042A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT 有权
公开(公告)号：US20220131042A1
公开(公告)日：2022-04-28
申请号：US17510481
申请日：2021-10-26
申请人： NIKKISO CO., LTD.
发明人： Yusuke MATSUKURA , Cyril PERNOT
IPC分类号： H01L33/32 , H01L33/14 , H01L33/02 , H01L33/00
摘要： A nitride semiconductor light-emitting element includes an n-type semiconductor layer, a p-type semiconductor layer, an active layer, and an electron blocking layer comprising at least one layer. The at least one layer of the electron blocking layer includes a peak-containing layer having an n-type impurity concentration peak in an n-type impurity concentration distribution along a stacking direction. The n-type impurity concentration peak appears as a local maximum in the n-type impurity concentration distribution along the stacking direction in the peak-containing layer and has an n-type impurity concentration of not less than 10 times a smallest value of the n-type impurity concentration in a region along the stacking direction between positions that are separated from a position of the peak in the stacking direction on both sides in the stacking direction by 10% of a thickness of the peak-containing layer.

10. 发明申请

US20210296527A1 NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING SAME 有权
公开(公告)号：US20210296527A1
公开(公告)日：2021-09-23
申请号：US17264617
申请日：2019-05-24
申请人： NIKKISO CO., LTD.
发明人： Yusuke MATSUKURA , Cyril PERNOT
IPC分类号： H01L33/06 , H01L33/32 , H01L33/00
摘要： A nitride semiconductor light-emitting element includes stacked AlGaN-based nitride semiconductors and emits ultraviolet light at a central wavelength of 290 nm to 360 nm. The nitride semiconductor light-emitting element includes an n-type cladding layer comprising n-type AlGaN, and an active layer provided on the n-type cladding layer and comprising a single quantum well structure. The single quantum well structure includes one barrier layer made of AlGaN and one well layer made of AlGaN with an Al composition ratio lower than an Al composition ratio of the AlGaN constituting the one barrier layer.

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