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1. 发明授权

US10833358B2 Porous carbon having connecting mesopores and electrode 有权
公开(公告)号：US10833358B2
公开(公告)日：2020-11-10
申请号：US16599534
申请日：2019-10-11
申请人： Naoto Abe , Yoshio Itoh , Tatsuya Dan , Yuka Araki , Shuhei Takeshita
发明人： Naoto Abe , Yoshio Itoh , Tatsuya Dan , Yuka Araki , Shuhei Takeshita
IPC分类号： H01M10/00 , H01M10/056 , H01M4/133 , H01G11/32 , H01G11/24 , H01G11/04 , H01M4/587 , H01G11/50 , H01M10/052 , H01M10/0569 , H01G11/26 , H01M10/0525 , H01G11/06 , H01G11/62 , H01G11/60 , C01B32/60
摘要： To provide a non-aqueous electrolyte electricity-storage element including a positive electrode including a positive-electrode active material capable of inserting and releasing anions, a negative electrode including a negative-electrode active material capable of inserting and releasing cations, and a non-aqueous electrolyte, wherein the positive-electrode active material is porous carbon having pores having a three-dimensional network structure, and wherein a changing rate of a cross-sectional thickness of a positive electrode film including the positive-electrode active material defined by Formula (1) below is less than 45%.

2. 发明申请

US20190190027A1 ACTIVE MATERIAL, ELECTRODE, AND POWER STORAGE ELEMENT 审中-公开
公开(公告)号：US20190190027A1
公开(公告)日：2019-06-20
申请号：US16211843
申请日：2018-12-06
申请人： Shuhei Takeshita , Masayoshi Nomura , Naoto Abe , Yoshio Itoh , Tatsuya Dan , Yuka Araki , Naoki Sugihara
发明人： Shuhei Takeshita , Masayoshi Nomura , Naoto Abe , Yoshio Itoh , Tatsuya Dan , Yuka Araki , Naoki Sugihara
IPC分类号： H01M4/583 , H01M4/60 , H01M10/0525 , H01G11/06 , H01G11/24 , H01G11/26 , H01G11/42 , H01G11/48 , H01G11/50
CPC分类号： H01M4/583 , H01G11/06 , H01G11/24 , H01G11/26 , H01G11/42 , H01G11/48 , H01G11/50 , H01M4/137 , H01M4/1399 , H01M4/608 , H01M10/0525 , H01M2004/021
摘要： An active material is provided. The active material comprises a porous carbon having a plurality of pores forming a three-dimensional network structure and a conductive polymer, and at least a part of the plurality of pores contains the conductive polymer.

3. 发明授权

US10811674B2 Non-aqueous electrolyte electricity-storage element including positive electrode having carbonaceous material with fluorine on surface 有权
公开(公告)号：US10811674B2
公开(公告)日：2020-10-20
申请号：US15677237
申请日：2017-08-15
申请人： Naoto Abe , Yoshio Itoh , Tatsuya Dan , Yuka Araki , Shuhei Takeshita
发明人： Naoto Abe , Yoshio Itoh , Tatsuya Dan , Yuka Araki , Shuhei Takeshita
IPC分类号： H01M4/133 , H01M10/052 , H01M10/0568 , H01M10/0569 , H01M4/583 , H01M4/485 , H01M4/02
摘要： A non-aqueous electrolyte electricity-storage element which includes a positive electrode including a positive-electrode active material capable of inserting and releasing anions, a negative electrode including a negative-electrode active material, and a non-aqueous electrolyte, wherein the positive-electrode active material is formed of a carbonaceous material, and a surface of the carbonaceous material includes fluorine.

4. 发明授权

US10297828B2 Non-aqueous electrolyte storage element including positive electrode having solid electrolyte interface material on surface of carbon material 有权
公开(公告)号：US10297828B2
公开(公告)日：2019-05-21
申请号：US15611261
申请日：2017-06-01
申请人： Yuka Araki , Naoto Abe , Yoshio Itoh , Tatsuya Dan , Shuhei Takeshita
发明人： Yuka Araki , Naoto Abe , Yoshio Itoh , Tatsuya Dan , Shuhei Takeshita
IPC分类号： H01M4/62 , H01M4/587 , H01M10/052 , H01M10/0568
摘要： To provide a non-aqueous electrolyte storage element including a positive electrode including a positive-electrode active material capable of inserting and eliminating anions, a negative electrode including a negative-electrode active material, and a non-aqueous electrolyte, wherein the positive-electrode active material includes a carbon material which has a plurality of pores constituting a three-dimensional network structure and has a solid electrolyte interface (SEI) material on a surface of the carbon material.

5. 发明授权

US08063488B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08063488B2
公开(公告)日：2011-11-22
申请号：US12382992
申请日：2009-03-27
申请人： Yoshio Itoh , Yoshimasa Kushima , Hirokazu Uchida
发明人： Yoshio Itoh , Yoshimasa Kushima , Hirokazu Uchida
IPC分类号： H01L23/498 , H01L23/28
CPC分类号： H01L24/11 , H01L21/561 , H01L23/3114 , H01L23/3135 , H01L24/12 , H01L2224/05001 , H01L2224/05008 , H01L2224/05022 , H01L2224/05024 , H01L2224/274 , H01L2924/01078 , H01L2924/10157 , H01L2924/14 , H01L2924/181 , H01L2924/00
摘要： The semiconductor device comprises a first area and a second area positioned adjacent to the outside of the first area, the semiconductor substrate having a main surface and side surfaces and disposed in such a manner that the main surface is positioned in the first area and each of the side surfaces is positioned at a boundary between the first area and the second area, a plurality of pads formed over the main surface of the semiconductor substrate and a plurality of external connecting terminals formed thereon, which are respectively electrically connected to the pads, a first resin portion which is formed over the main surface of the semiconductor substrate so as to cover the pads and has a main surface and side surfaces, and which is formed in such a manner that the external connecting terminals are exposed from the main surface and each of the side surfaces is positioned at the boundary, and a second resin portion which is positioned in the second area and formed so as to cover the side surfaces of the semiconductor substrate and the side surfaces of the first resin portion and which is different in composition from the first resin portion.
摘要翻译：半导体器件包括与第一区域的外部相邻定位的第一区域和第二区域，半导体衬底具有主表面和侧表面，并且以这样的方式设置，使得主表面位于第一区域中，并且每个侧表面位于第一区域和第二区域之间的边界处，形成在半导体衬底的主表面上的多个焊盘和形成在其上的多个外部连接端子，其分别电连接到焊盘，第一树脂部分，其形成在半导体衬底的主表面上以覆盖焊盘并且具有主表面和侧表面，并且形成为使得外部连接端子从主表面暴露并且每个所述侧表面位于所述边界处，并且所述第二树脂部分位于所述第二区域中并形成为覆盖所述第二区域所述半导体衬底的侧表面和所述第一树脂部分的侧表面与所述第一树脂部分的组成不同。

6. 发明授权

US4811261A Adaptive digital filter for determining a transfer equation of an unknown system 失效
标题翻译：用于确定未知系统传输方程的自适应数字滤波器
公开(公告)号：US4811261A
公开(公告)日：1989-03-07
申请号：US833718
申请日：1986-02-27
申请人： Masaki Kobayashi , Yoshio Itoh
发明人： Masaki Kobayashi , Yoshio Itoh
IPC分类号： G06F17/10 , H03H21/00 , G06F15/31
CPC分类号： H03H21/0012 , G06F17/10 , H03H2021/0089
摘要： An adaptive digital filter for identifying a transfer function of a unknown system is employed, for example, for echo cancellation and howling prevention. The transfer function of the adaptive filter can be obtained by the sum of outputs from N paths and forms a system of orthogonal functions having coefficient parameters of four groups of a, b, p and q. The groups p and q are adaptively adjusted in response to an error signal while the groups a and b are previously set based on a measurement effected previously or adaptively adjusted in response to the error signal.
摘要翻译：采用用于识别未知系统的传递函数的自适应数字滤波器，例如用于回波消除和防止啸声。自适应滤波器的传递函数可以通过来自N个路径的输出的和来获得，并形成具有四个组a，b，p和q的系数参数的正交函数的系统。基于误差信号自适应地调整组p和q，同时基于先前所进行的测量或者响应于误差信号自适应地调整组a和b。

7. 发明授权

US4151660A Socks for use with footgear 失效
标题翻译：袜子用于脚手架
公开(公告)号：US4151660A
公开(公告)日：1979-05-01
申请号：US850249
申请日：1977-11-10
申请人： Hiroyuki Yoshimi , Yoshio Itoh
发明人： Hiroyuki Yoshimi , Yoshio Itoh
IPC分类号： A43B17/00 , A43B17/04 , A43B3/10 , A43B7/06 , A43B13/38
CPC分类号： A43B17/04 , A41B11/005
摘要： A sock for use with footgear is provided comprising a core formed of copper or copper-containing metal, a top ply of air-permeable material overlying the upper surface of said core, and a bottom ply of air-permeable material underlying the lower surface of the core, at least said top ply and bottom ply being joined together around the periphery of said core. The socks according to this invention maintain user's feet sanitary in his footgear for a period of time and keeps his feet from giving off offensive odors.
摘要翻译：提供了一种用于脚垫的袜子，包括由铜或含铜金属形成的芯，覆盖在所述芯的上表面上的透气材料的顶层，以及位于所述芯的下表面下方的透气材料的底层芯，至少所述顶层和底层围绕所述芯的周边连接在一起。根据本发明的袜子将使用者的脚在一段时间内保持在他的脚下卫生，并保持脚不发出恶臭。

8. 发明申请

US20100128823A1 DOPPLER FREQUENCY ESTIMATING DEVICE, RECEIVING DEVICE, RECORDING MEDIUM AND DOPPLER FREQUENCY ESTIMATING METHOD 失效
标题翻译：多普勒频率估计装置，接收装置，记录介质和多普勒频率估计方法
公开(公告)号：US20100128823A1
公开(公告)日：2010-05-27
申请号：US12622259
申请日：2009-11-19
申请人： Naoto Sasaoka , Yoshio Itoh
发明人： Naoto Sasaoka , Yoshio Itoh
IPC分类号： H04L27/06
CPC分类号： H04L27/2657 , H04B7/01 , H04L27/2672 , H04L27/2679 , H04L27/2695
摘要： A device of an example of the invention comprises a first section which performs IFFT for a channel estimation value obtained by channel estimation to obtain a channel impulse response, a second section which selects paths that belong to a group having a large element based on elements of paths for the channel impulse response, a third section which calculates autocorrelation values by time averaging for each of the paths selected by the second section, a fourth section which obtains an ensemble average value of the autocorrelation values by time averaging obtained by the third section, and a fifth section which obtains a Doppler frequency associated with the ensemble average value based on a characteristic of a relationship between an autocorrelation value and an Doppler frequency and the ensemble average value.
摘要翻译：本发明实施例的装置包括对通过信道估计获得的信道估计值执行IFFT以获得信道脉冲响应的第一部分，第二部分，其基于元素的元素选择属于具有大元素的组的路径用于信道脉冲响应的路径，第三部分，其通过对由第二部分选择的每个路径进行时间平均来计算自相关值;第四部分，通过由第三部分获得的时间平均获得自相关值的整体平均值; 以及第五部分，其基于自相关值和多普勒频率与总体平均值之间的关系的特性来获得与所述整体平均值相关联的多普勒频率。

9. 发明授权

US06489234B1 Method of making a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06489234B1
公开(公告)日：2002-12-03
申请号：US09664764
申请日：2000-09-19
申请人： Yoshio Itoh
发明人： Yoshio Itoh
IPC分类号： H01L21306
CPC分类号： H01L21/31144
摘要： A method of making a semiconductor device includes the steps of etching, with a resist pattern (3) used as a mask, a contact pattern (4) in at least one interlayer insulation film (2) made on a silicon substrate (1); forming on the contact pattern an insulation film (5) containing silicon as a main component; and oxidizing by heat treatment the insulation film to provide an oxide film (6) including a side wall oxide film on an inside wall of the contact pattern.
摘要翻译：制造半导体器件的方法包括以下步骤：利用用作掩模的抗蚀剂图案（3），在至少一个在硅衬底（1）上形成的层间绝缘膜（2）中的接触图案（4）进行蚀刻; 在所述接触图形上形成以硅为主要成分的绝缘膜（5）; 并通过热处理绝缘膜进行氧化，以在接触图案的内壁上提供包括侧壁氧化膜的氧化物膜（6）。

10. 发明授权

US5903025A Semiconductor memory device and method for manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US5903025A
公开(公告)日：1999-05-11
申请号：US277527
申请日：1994-07-19
申请人： Yoshio Itoh
发明人： Yoshio Itoh
IPC分类号： H01L27/10 , H01L21/8242 , H01L27/108 , H01L27/02 , H01L23/48 , H01L29/40
CPC分类号： H01L27/10873 , H01L27/10891 , H01L27/10814 , H01L2924/0002
摘要： In an element region, in which a memory cell is constituted, on a silicon substrate, a gate electrode with which each of a plurality of the memory cells is individually constituted is individually disposed for each memory cell. A first and a second inter-layer insulating films are formed right upon the gate electrode. A jumping wiring is disposed on the insulating films. The jumping wiring is directly and electrically connected, within the memory pattern region in which the memory cell is formed, with each individual gate electrodes through the jumping contact.
摘要翻译：在构成存储单元的元件区域中，在硅基板上，对于每个存储单元分别设置有分别构成多个存储单元中的每一个的栅电极。在栅极上形成第一和第二层间绝缘膜。跳线布置在绝缘膜上。跳跃布线在形成存储单元的存储器图形区域内直接和电连接，每个单独的栅极通过跳跃接触。

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