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1. 发明授权

US08901606B2 Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layer 有权
标题翻译：包含低温缓冲层的假型高电子迁移率晶体管（pHEMT）
公开(公告)号：US08901606B2
公开(公告)日：2014-12-02
申请号：US13459864
申请日：2012-04-30
申请人： Nate Perkins , Jonathan Abrokwah , Hans G. Rohdin , Phil Marsh , John Stanback
发明人： Nate Perkins , Jonathan Abrokwah , Hans G. Rohdin , Phil Marsh , John Stanback
IPC分类号： H01L29/24
CPC分类号： H01L29/32 , H01L29/42316 , H01L29/66462 , H01L29/7787
摘要： A pseudomorphic high electron mobility transistor (pHEMT) comprises: a substrate comprising a Group III-V semiconductor material; buffer layer disposed over the substrate; and a channel layer disposed over the buffer layer. The buffer layer comprises microprecipitates of a Group V semiconductor element. A method of fabricating a pHEMT is also described.
摘要翻译：伪态高电子迁移率晶体管（pHEMT）包括：包含III-V族半导体材料的衬底; 缓冲层设置在衬底上; 以及设置在缓冲层上的沟道层。缓冲层包括V族半导体元件的微沉淀物。还描述了制造pHEMT的方法。

2. 发明申请

US20070020920A1 Method for fabricating low leakage interconnect layers in integrated circuits 审中-公开
标题翻译：在集成电路中制造低泄漏互连层的方法
公开(公告)号：US20070020920A1
公开(公告)日：2007-01-25
申请号：US11525428
申请日：2006-09-22
申请人： Chintamani Palsule , Jay Meyer , John Stanback , Jeremy Theil , Mark Crook , Kirk Lindahl
发明人： Chintamani Palsule , Jay Meyer , John Stanback , Jeremy Theil , Mark Crook , Kirk Lindahl
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76847 , H01L21/7685 , H01L21/76858 , H01L21/76867 , H01L21/76877
摘要： A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.
摘要翻译：一种制造低泄漏集成电路结构的方法。将防反射层直接设置在互连导体的顶部上，将介电层设置在抗反射层上。互连导体为铝; 抗反射层是氮化钛，抗反射层具有小于或等于650埃且大于或等于150埃的厚度。接触窗口打开，接触窗口至少向下延伸到抗反射层。

3. 发明申请

US20070158696A1 Optical enhancement of integrated circuit photodetectors 有权
标题翻译：集成电路光电探测器的光学增强
公开(公告)号：US20070158696A1
公开(公告)日：2007-07-12
申请号：US11716863
申请日：2007-03-12
申请人： Chintamani Palsule , John Stanback , Thomas Dungan , Mark Crook
发明人： Chintamani Palsule , John Stanback , Thomas Dungan , Mark Crook
IPC分类号： H01L27/148
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable through the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译：一种半导体集成电路结构及其制造方法。半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。光通过覆盖电介质层可传输; 并透过透镜形成电介质层。透镜形成电介质层形成嵌入的凸形微透镜。微透镜将光引导到光敏设备上。

4. 发明申请

US20060125936A1 Multi-lens imaging systems and methods 有权
标题翻译：多镜头成像系统及方法
公开(公告)号：US20060125936A1
公开(公告)日：2006-06-15
申请号：US11016376
申请日：2004-12-15
申请人： Russell Gruhike , Dale Schroeder , John Stanback
发明人： Russell Gruhike , Dale Schroeder , John Stanback
IPC分类号： H04N9/68
CPC分类号： H04N9/045
摘要： Imaging systems and methods are provided. One exemplary system incorporates multiple lenses that are individually configured to receive visible light from an object to be imaged, and to direct this light upon a corresponding sensor array. Luminance information is then derived from signals generated in one or more of the sensor arrays. When chrominance information is desired, an optical filter is interposed between a lens and the corresponding sensor array. The mosaic pattern contained in the optical filter is tailored to provide advantageous chrominance information. One or more such filters with different mosaic patterns may be employed. The luminance and chrominance information obtained from the sensor arrays are combined to generate an image of the object.
摘要翻译：提供成像系统和方法。一个示例性系统包括多个透镜，其被单独配置为接收来自待成像对象的可见光，并将该光引导到相应的传感器阵列上。然后从在一个或多个传感器阵列中产生的信号导出亮度信息。当需要色度信息时，在透镜和相应的传感器阵列之间插入滤光器。包含在滤光器中的马赛克图案被定制以提供有利的色度信息。可以采用具有不同镶嵌图案的一个或多个这样的滤光片。从传感器阵列获得的亮度和色度信息被组合以产生对象的图像。

5. 发明申请

US20070262355A1 Pixel with asymmetric transfer gate channel doping 有权
标题翻译：具有不对称传输栅极通道掺杂的像素
公开(公告)号：US20070262355A1
公开(公告)日：2007-11-15
申请号：US11707848
申请日：2007-02-16
申请人： Chintamani Palsule , Changhoon Choi , Fredrick LaMaster , John Stanback , Thomas Dungan , Thomas Joy , Homayoon Haddad
发明人： Chintamani Palsule , Changhoon Choi , Fredrick LaMaster , John Stanback , Thomas Dungan , Thomas Joy , Homayoon Haddad
IPC分类号： H01L27/148
CPC分类号： H01L27/14643 , H01L27/14601 , H01L29/66659 , H01L31/035281
摘要： A pixel including a substrate of a first conductivity type and having a surface, a photodetector of a second conductivity type that is opposite the first conductivity type, a floating diffusion region of the second conductivity type, a transfer region between the photodetector and the floating diffusion, a gate positioned above the transfer region and partially overlapping the photodetector, and a pinning layer of the first conductivity type extending at least across the photodetector from the gate. A channel implant of the first conductivity type extending from between a midpoint of the transfer gate and the floating diffusion to at least across the photodiode and having a dopant concentration such that a dopant concentration of the transfer region is greater proximate to the photodetector than the floating diffusion, and wherein a peak dopant concentration of the channel implant is at a level and at a depth below the surface such that a partially-buried channel is formed in the transfer region between the photodiode and floating diffusion when the transfer gate is energized.
摘要翻译：包括具有第一导电类型并具有表面的衬底的像素，与第一导电类型相反的第二导电类型的光电检测器，第二导电类型的浮动扩散区域，光电检测器和浮动扩散区之间的传输区域位于所述转印区域上方并且部分地与所述光电检测器重叠的栅极以及至少从所述栅极延伸穿过所述光电检测器的所述第一导电类型的钉扎层。第一导电类型的沟道植入物从传输栅极的中点和浮动扩散延伸到至少跨越光电二极管并具有掺杂剂浓度，使得传输区域的掺杂剂浓度在接近光电检测器处比浮置扩散，并且其中沟道注入的峰值掺杂剂浓度处于表面以下的水平和深度，使得当传输栅极通电时，在光电二极管和浮动扩散之间的传输区域中形成部分埋置的沟道。

6. 发明申请

US20060099800A1 Method for fabricating low leakage interconnect layers in integrated circuits 审中-公开
标题翻译：在集成电路中制造低泄漏互连层的方法
公开(公告)号：US20060099800A1
公开(公告)日：2006-05-11
申请号：US10984701
申请日：2004-11-09
申请人： Chintamani Palsule , Jay Meyer , John Stanback , Jeremy Theil , Mark Crook , Kirk Lindahl
发明人： Chintamani Palsule , Jay Meyer , John Stanback , Jeremy Theil , Mark Crook , Kirk Lindahl
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/76847 , H01L21/7685 , H01L21/76858 , H01L21/76867 , H01L21/76877
摘要： A method for fabricating a low leakage integrated circuit structure. An antireflective layer is disposed without intervening layers directly onto the top of an interconnect conductor, and a dielectric layer is disposed over the antireflective layer. The interconnect conductor is aluminum; the antireflective layer is titanium nitride, and the antireflective layer has thickness less than or equal to 650 angstroms and greater than or equal to 150 angstroms. A contact window is opened with the contact window extending at least down to the antireflective layer.
摘要翻译：一种制造低泄漏集成电路结构的方法。将防反射层直接设置在互连导体的顶部上，将介电层设置在抗反射层上。互连导体为铝; 抗反射层是氮化钛，抗反射层具有小于或等于650埃且大于或等于150埃的厚度。接触窗口打开，接触窗口至少向下延伸到抗反射层。

7. 发明申请

US20060108505A1 Imaging systems and methods 有权
标题翻译：成像系统和方法
公开(公告)号：US20060108505A1
公开(公告)日：2006-05-25
申请号：US10994077
申请日：2004-11-19
申请人： Russell Gruhlke , Dale Schroeder , John Stanback
发明人： Russell Gruhlke , Dale Schroeder , John Stanback
IPC分类号： H01L27/00
CPC分类号： G03B17/00
摘要： Imaging systems and methods are provided. One exemplary system incorporates multiple lenses that are individually configured to receive multi-wavelength light from an object to be imaged. Each lens provides an optimal modulation transfer function (MTF) for an individual wavelength contained in the multi-wavelength light when this individual wavelength of light strikes the lens at a particular incident angle. Associated with each lens is a color filter and a sensor. The color filter receives the multi-wavelength light from the lens, and transmits the individual wavelength of light on to the sensor. The image signals obtained from each of the multiple sensors are combined to generate an image of the object.
摘要翻译：提供成像系统和方法。一个示例性系统包括多个透镜，其被单独配置成从要成像的对象接收多波长光。当单个波长的光以特定入射角度撞击透镜时，每个透镜为包含在多波长光中的单个波长提供最佳调制传递函数（MTF）。与每个透镜相关联的是滤色器和传感器。滤色器接收来自透镜的多波长光，并将各波长的光发射到传感器。从多个传感器中的每一个获得的图像信号被组合以产生对象的图像。

8. 发明授权

US06670824B2 Integrated polysilicon fuse and diode 失效
标题翻译：集成多晶硅熔丝和二极管
公开(公告)号：US06670824B2
公开(公告)日：2003-12-30
申请号：US10103495
申请日：2002-03-20
申请人： Jon Goodbread , John Stanback , Chris Feng , Molly Johnson
发明人： Jon Goodbread , John Stanback , Chris Feng , Molly Johnson
IPC分类号： H03K19177
CPC分类号： G11C17/165 , G11C17/16 , G11C2213/72 , H01L23/5256 , H01L27/10 , H01L2924/0002 , H01L2924/00
摘要： An integrated polysilicon fuse and diode and methods of making the same are provided. The integrated polysilicon fuse and diode combination may be implemented in a programmable cross point fuse array. The integrated polysilicon fuse and diode may be used in a random access memory (RAM) cell. The polysilicon diode may be isolated from a substrate and other devices, use less area on a substrate, and cost less to manufacture compared to other diodes.
摘要翻译：提供集成多晶硅熔丝和二极管及其制造方法。集成多晶硅熔丝和二极管组合可以在可编程交叉点熔丝阵列中实现。集成多晶硅保险丝和二极管可以用在随机存取存储器（RAM）单元中。多晶硅二极管可以与衬底和其他器件隔离，在衬底上使用较少的面积，并且与其它二极管相比成本较低。

9. 发明申请

US20060126127A1 System and method for detecting and correcting defective pixels in a digital image sensor 有权
标题翻译：用于检测和校正数字图像传感器中的有缺陷的像素的系统和方法
公开(公告)号：US20060126127A1
公开(公告)日：2006-06-15
申请号：US11007979
申请日：2004-12-09
申请人： John Stanback , Xuemei Zhang , Ramakrishna Kakarala , Bond Ying
发明人： John Stanback , Xuemei Zhang , Ramakrishna Kakarala , Bond Ying
IPC分类号： H04N1/04
CPC分类号： H04N5/367
摘要： A digital image sensor comprising an array of pixels and a processor is provided. The array of pixels comprises a current pixel in a first color plane that is configured to produce a current sensor value, a first plurality of pixels in the first color plane that is configured to produce a first plurality of sensor values, and a second plurality of pixels in the second color plane that is configured to produce a second plurality of sensor values. The processor is configured to generate a plurality of estimate values using the first plurality of sensor values and a plurality of intensity ratios associated with the second plurality of sensor values, and the processor is configured to determine whether the current pixel is defective using the plurality of estimate values and the current sensor value.
摘要翻译：提供了包括像素阵列和处理器的数字图像传感器。像素阵列包括被配置为产生电流传感器值的第一颜色平面中的当前像素，被配置为产生第一多个传感器值的第一颜色平面中的第一多个像素，以及第二多个被配置为产生第二多个传感器值的第二颜色平面中的像素。处理器被配置为使用第一多个传感器值和与第二多个传感器值相关联的多个强度比来生成多个估计值，并且处理器被配置为使用多个传感器值来确定当前像素是否有缺陷估计值和当前传感器值。

10. 发明申请

US20060097244A1 Optical enhancement of integrated circuit photodetectors 有权
标题翻译：集成电路光电探测器的光学增强
公开(公告)号：US20060097244A1
公开(公告)日：2006-05-11
申请号：US10984670
申请日：2004-11-09
申请人： Chintamani Palsule , John Stanback , Thomas Dungan , Mark Crook
发明人： Chintamani Palsule , John Stanback , Thomas Dungan , Mark Crook
IPC分类号： H01L31/109
CPC分类号： H01L27/1462 , H01L27/14627 , H01L27/14629 , H01L27/14685
摘要： A semiconductor integrated circuit structure and method for fabricating. The semiconductor integrated circuit structure includes a light sensitive device integral with a semiconductor substrate, a cover dielectric layer disposed over the light sensitive device, and a lens-formation dielectric layer disposed over the cover dielectric layer. Light is transmittable though the cover dielectric layer; and through the lens-formation dielectric layer. The lens-formation dielectric layer forms an embedded convex microlens. The microlens directs light onto the light sensitive device.
摘要翻译：一种半导体集成电路结构及其制造方法。半导体集成电路结构包括与半导体衬底整体的光敏器件，设置在光敏器件上的覆盖电介质层，以及设置在覆盖电介质层上的透镜形成电介质层。光通过覆盖电介质层可传输; 并透过透镜形成电介质层。透镜形成电介质层形成嵌入的凸形微透镜。微透镜将光引导到光敏设备上。

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