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    • 1. 发明授权
    • VCSEL semiconductor device
    • VCSEL半导体器件
    • US08189642B1
    • 2012-05-29
    • US12710173
    • 2010-02-22
    • Nein-Yi LiChuan XieChun LeiRichard F. Carson
    • Nein-Yi LiChuan XieChun LeiRichard F. Carson
    • H01S5/00
    • H01S5/18352H01S5/0021H01S5/18313H01S5/18327H01S5/1833H01S2301/176
    • A vertical surface emitting laser having a mesa structure formed with sloping side walls. A passivation layer including at least two sublayers at least partially covers the mesa structure. The at least two sublayers have differing stress components arranged to at least partially counter each other. By making the mesa structure with sloping side walls, the deposition of the passivation layer in such a way as to minimize the net stress of the passivation layer is facilitated. In addition, the mesa structure has a first stack of mirror layers comprising a semiconductor material doped with a first dopant and having first peripheral oxidized portions extending a first distance into said first stack, and a second stack of mirror layers comprising a semiconductor material doped with a second dopant and having second peripheral oxidized portions extending a second distance into said second stack, wherein the first distance is different from the second distance. By controlling the first distance and the second distance appropriately, the internal stress in the mesa structure can be reduced.
    • 具有形成有倾斜侧壁的台面结构的垂直表面发射激光器。 包括至少两个子层的钝化层至少部分地覆盖台面结构。 至少两个子层具有不同的应力分量,其布置成至少部分地相互对抗。 通过使具有倾斜侧壁的台面结构,钝化层的沉积以使钝化层的净应力最小化的方式变得容易。 此外,台面结构具有包括掺杂有第一掺杂剂的半导体材料的第一层反射镜层,并且具有第一距离延伸到所述第一堆叠中的第一外围氧化部分,以及第二层反射镜层,其包括掺杂有 第二掺杂剂并且具有将第二距离延伸到所述第二堆叠中的第二外围氧化部分,其中所述第一距离与所述第二距离不同。 通过适当地控制第一距离和第二距离,可以减小台面结构中的内部应力。
    • 3. 发明申请
    • Power Monitoring Photodiode Array with Integrated, Current Sourced Reference Photodiode
    • 功率监控光电二极管阵列与集成的电流参考光电二极管
    • US20110091207A1
    • 2011-04-21
    • US12582545
    • 2009-10-20
    • Chuan XieJiaxi KanDennis BurkeDaniel Zhu
    • Chuan XieJiaxi KanDennis BurkeDaniel Zhu
    • H04B10/08
    • H04B10/564
    • A photodiode array includes a plurality of monitoring photodiodes capable operating in a voltage mode configuration each able to provide a voltage indicating an intensity of an incident light. Integrated with the monitoring photodiodes is a reference diode configured to produce reference voltages in response to reference currents supplied to that diode. The monitoring photodiodes and the reference diode may be integrated and have the same current-voltage characteristics and the same temperature, for example by fabricating them on the same substrate. The reference diode is supplied with the reference currents in dark manner, meaning without incident light impinging on the reference diode. The resulting reference voltages, the reference source currents, and the measured photo-voltage from the monitoring photodiodes are than used to determine an optical power value at any temperature within the operation temperature range.
    • 光电二极管阵列包括能够以电压模式配置工作的多个监视光电二极管,每个能够提供指示入射光强度的电压。 与监控光电二极管集成的参考二极管被配置为响应于提供给该二极管的参考电流产生参考电压。 监控光电二极管和参考二极管可以被集成并具有相同的电流 - 电压特性和相同的温度,例如通过在相同的衬底上制造它们。 参考二极管以黑暗方式提供参考电流,意味着没有入射光照射在参考二极管上。 所得到的参考电压,参考源电流和来自监控光电二极管的测量光电压都不是用于确定在工作温度范围内的任何温度下的光功率值。
    • 5. 发明授权
    • Power monitoring photodiode array with integrated, current sourced reference photodiode
    • 功率监控光电二极管阵列,集成了电流源参考光电二极管
    • US08526811B2
    • 2013-09-03
    • US12582545
    • 2009-10-20
    • Chuan XieJiaxi KanDennis BurkeDaniel Zhu
    • Chuan XieJiaxi KanDennis BurkeDaniel Zhu
    • H04B10/08
    • H04B10/564
    • A photodiode array includes a plurality of monitoring photodiodes capable operating in a voltage mode configuration each able to provide a voltage indicating an intensity of an incident light. Integrated with the monitoring photodiodes is a reference diode configured to produce reference voltages in response to reference currents supplied to that diode. The monitoring photodiodes and the reference diode may be integrated and have the same current-voltage characteristics and the same temperature, for example by fabricating them on the same substrate. The reference diode is supplied with the reference currents in dark manner, meaning without incident light impinging on the reference diode. The resulting reference voltages, the reference source currents, and the measured photo-voltage from the monitoring photodiodes are than used to determine an optical power value at any temperature within the operation temperature range.
    • 光电二极管阵列包括能够以电压模式配置工作的多个监视光电二极管,每个能够提供指示入射光强度的电压。 与监控光电二极管集成的参考二极管被配置为响应于提供给该二极管的参考电流产生参考电压。 监控光电二极管和参考二极管可以被集成并具有相同的电流 - 电压特性和相同的温度,例如通过在相同的衬底上制造它们。 参考二极管以黑暗方式提供参考电流,意味着没有入射光照射在参考二极管上。 所得到的参考电压,参考源电流和来自监控光电二极管的测量光电压都不是用于确定在工作温度范围内的任何温度下的光功率值。