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    • 5. 发明授权
    • Adaptive zero current sense apparatus and method for a switching regulator
    • 自适应零电流检测装置和开关调节器的方法
    • US07652945B2
    • 2010-01-26
    • US12078356
    • 2008-03-31
    • Kwan-Jen ChuNien-Hui KungTzu-Huan ChiuChien-Ping Lu
    • Kwan-Jen ChuNien-Hui KungTzu-Huan ChiuChien-Ping Lu
    • G11C5/14
    • H02M3/1588H02M2001/0009Y02B70/1466
    • A switching regulator includes a low-side switch having a body diode. During the low-side switch is on, a zero-current sense circuit monitors the inductor current of the switching regulator and triggers a signal to turn off the low-side switch when the inductor current falls down to a zero-current threshold, to prevent reverse inductor current from the output terminal of the switching regulator. A body-diode turn-on time controller monitors the turn-on time of the body diode and adjusts the zero-current threshold according thereto, and the turn-on time of the body diode can be reduced to an optimal interval subsequently. The self-adjustable zero-current threshold is adaptive according to the application conditions, such as the inductor size, input voltage and output voltage of the switching regulator.
    • 开关调节器包括具有体二极管的低侧开关。 在低侧开关导通时,零电流检测电路监测开关稳压器的电感电流,并在电感电流下降到零电流阈值时触发信号关闭低边开关,以防止 反向电感电流从开关稳压器的输出端子。 体二极管导通时间控制器监视体二极管的接通时间并根据其调整零电流阈值,并且体二极管的接通时间可以随后降低到最佳间隔。 根据应用条件,自适应零电流阈值是自适应的,如开关稳压器的电感尺寸,输入电压和输出电压。
    • 8. 发明授权
    • NMOSFET-base linear charger
    • NMOSFET基线性充电器
    • US08248049B2
    • 2012-08-21
    • US12285186
    • 2008-09-30
    • Nien-Hui KungKwan-Jen Chu
    • Nien-Hui KungKwan-Jen Chu
    • G05F1/573
    • H02J7/0072
    • In an NMOSFET-base linear charger, a pair of common gate charging NMOSFET and sensing NMOSFET have their sources coupled together or virtually shorted to each other, so that these two NMOSFETs have a same gate-source voltage and thereby the sensing NMOSFET reflects the drain-source current of the charging NMOSFET on its drain-source current. From the drain-source current of the sensing NMOSFET, a current sensing signal is generated to control the gate voltage of the charging NMOSFET. By implementing the current source with NMOSFETs, the linear charger has smaller die area and less power loss.
    • 在NMOSFET基线性充电器中,一对公共栅极充电NMOSFET和感测NMOSFET的源极彼此耦合在一起或虚拟短路,使得这两个NMOSFET具有相同的栅极 - 源极电压,从而感测NMOSFET反射漏极 在其漏极 - 源极电流上充电NMOSFET的源极电流。 从感测NMOSFET的漏源电流产生电流感测信号以控制充电NMOSFET的栅极电压。 通过使用NMOSFET实现电流源,线性充电器具有更小的管芯面积和更少的功率损耗。