专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08455332B2 Method and apparatus for manufacturing LED devices using laser scribing 有权
标题翻译：使用激光划线制造LED器件的方法和装置
公开(公告)号：US08455332B2
公开(公告)日：2013-06-04
申请号：US12434208
申请日：2009-05-01
申请人： Norihito Hamaguchi , Ghulam Hasnain
发明人： Norihito Hamaguchi , Ghulam Hasnain
IPC分类号： H01L21/00
CPC分类号： H01L33/0095 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
摘要翻译：公开了一种使用激光划线制造发光装置以提高整体光输出的方法。在将具有由街道分隔开的发光二极管（“LED”）器件的半导体晶片放置在晶片卡盘上时，该工艺将包含LED器件的前侧的半导体晶片的第一表面朝上并且包含背面的半导体晶片的第二表面 LED器件的侧面朝向晶片卡盘。在将激光装置对准在街道上方的半导体晶片的第一表面上之后，该处理被配置为将由激光装置产生的激光束的高强度部分聚焦在更靠近LED背面的基板中的位置设备。

2. 发明授权

US08324636B2 Method and apparatus for manufacturing LED devices using laser scribing 有权
标题翻译：使用激光划线制造LED器件的方法和装置
公开(公告)号：US08324636B2
公开(公告)日：2012-12-04
申请号：US12906349
申请日：2010-10-18
申请人： Norihito Hamaguchi , Ghulam Hasnain
发明人： Norihito Hamaguchi , Ghulam Hasnain
IPC分类号： H01L33/00
CPC分类号： H01L33/0095 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
摘要翻译：公开了一种使用激光划线制造发光装置以提高整体光输出的方法。在将具有由街道分隔开的发光二极管（LED）器件的半导体晶片放置在晶片卡盘上时，该处理将包含LED器件的前侧面向上的半导体晶片的第一表面和包含背面的半导体晶片的第二表面 LED器件面向晶片卡盘。在将激光装置对准在街道上方的半导体晶片的第一表面上之后，该处理被配置为将由激光装置产生的激光束的高强度部分聚焦在更靠近LED背面的基板中的位置设备。

3. 发明申请

US20110031508A1 Method and Apparatus for Manufacturing LED Devices using Laser Scribing 有权
标题翻译：使用激光划线制造LED器件的方法和装置
公开(公告)号：US20110031508A1
公开(公告)日：2011-02-10
申请号：US12906349
申请日：2010-10-18
申请人： Norihito Hamaguchi , Ghulam Hasnain
发明人： Norihito Hamaguchi , Ghulam Hasnain
IPC分类号： H01L33/00 , B23K26/00
CPC分类号： H01L33/0095 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
摘要翻译：公开了一种使用激光划线制造发光装置以提高整体光输出的方法。在将具有由街道分隔开的发光二极管（“LED”）器件的半导体晶片放置在晶片卡盘上时，该工艺将包含LED器件的前侧的半导体晶片的第一表面朝上并且包含背面的半导体晶片的第二表面 LED器件的侧面朝向晶片卡盘。在将激光装置对准在街道上方的半导体晶片的第一表面上之后，该处理被配置为将由激光装置产生的激光束的高强度部分聚焦在更靠近LED背面的基板中的位置设备。

4. 发明申请

US20100140630A1 Method And Apparatus For Manufacturing LED Devices Using Laser Scribing 有权
标题翻译：使用激光划线制造LED器件的方法和装置
公开(公告)号：US20100140630A1
公开(公告)日：2010-06-10
申请号：US12434208
申请日：2009-05-01
申请人： Norihito Hamaguchi , Ghulam Hasnain
发明人： Norihito Hamaguchi , Ghulam Hasnain
IPC分类号： H01L33/00 , B23K26/36
CPC分类号： H01L33/0095 , B23K26/40 , B23K2101/40 , B23K2103/50
摘要： A method of manufacturing a light-emitting device using laser scribing to improve overall light output is disclosed. Upon placing a semiconductor wafer having light emitting diode (“LED”) devices separated by streets on a wafer chuck, the process arranges a first surface of semiconductor wafer containing front sides of the LED devices facing up and a second surface of semiconductor wafer containing back sides of the LED devices facing toward the wafer chuck. After aligning a laser device over the first surface of the semiconductor wafer above a street, the process is configured to focus a high intensity portion of a laser beam generated by the laser device at a location in a substrate closer to the back sides of the LED devices.
摘要翻译：公开了一种使用激光划线制造发光装置以提高整体光输出的方法。在将具有由街道分隔开的发光二极管（“LED”）器件的半导体晶片放置在晶片卡盘上时，该工艺将包含LED器件的前侧的半导体晶片的第一表面朝上并且包含背面的半导体晶片的第二表面 LED器件的侧面朝向晶片卡盘。在将激光装置对准在街道上方的半导体晶片的第一表面上之后，该处理被配置为将由激光装置产生的激光束的高强度部分聚焦在更靠近LED背面的基板中的位置设备。

5. 发明授权

US09142743B2 High temperature gold-free wafer bonding for light emitting diodes 有权
标题翻译：用于发光二极管的高温无金晶片接合
公开(公告)号：US09142743B2
公开(公告)日：2015-09-22
申请号：US13196839
申请日：2011-08-02
申请人： Chih-Wei Chuang , Chao-Kun Lin , Long Yang , Norihito Hamaguchi
发明人： Chih-Wei Chuang , Chao-Kun Lin , Long Yang , Norihito Hamaguchi
IPC分类号： H01L33/36 , H01L33/62 , H01L33/00 , H01L33/40 , H01L23/00
CPC分类号： H01L33/62 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L33/0079 , H01L33/405 , H01L2224/05624 , H01L2224/29118 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2924/00014 , H01L2924/0132 , H01L2924/10253 , H01L2924/1033 , H01L2924/12041 , H01L2924/181 , H01L2933/0066 , H01L2924/0665 , H01L2924/01013 , H01L2924/0103 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.
摘要翻译：通过在硅晶片上生长外延LED结构来制造垂直GaN基LED。添加银层并退火以承受> 450℃的温度。提供了在> 450℃有效5分钟的阻挡层（例如Ni / Ti），以防止粘结金属扩散到银中。然后，所得到的器件晶片结构使用在> 380℃熔化的高温接合金属（例如，AlGe）将晶片结合到载体晶片结构。在晶片接合之后，去除硅，无金电极（例如，Al ），并且结构被分割。与电极金属相容的高温焊料（例如ZnAl）用于管芯附着。芯片附着在> 380°C下发生十秒，而不熔化粘结金属或以其他方式损坏器件。整个LED不含金，因此可在大容量无金属半导体制造设备中制造。

6. 发明申请

US20130032845A1 HIGH TEMPERATURE GOLD-FREE WAFER BONDING FOR LIGHT EMITTING DIODES 有权
标题翻译：用于发光二极管的高温无金色自由波键
公开(公告)号：US20130032845A1
公开(公告)日：2013-02-07
申请号：US13196839
申请日：2011-08-02
申请人： Chih-Wei Chuang , Chao-Kun Lin , Long Yang , Norihito Hamaguchi
发明人： Chih-Wei Chuang , Chao-Kun Lin , Long Yang , Norihito Hamaguchi
IPC分类号： H01L33/40 , H01L33/48
CPC分类号： H01L33/62 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L33/0079 , H01L33/405 , H01L2224/05624 , H01L2224/29118 , H01L2224/2929 , H01L2224/29339 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2224/83192 , H01L2224/83801 , H01L2924/00014 , H01L2924/0132 , H01L2924/10253 , H01L2924/1033 , H01L2924/12041 , H01L2924/181 , H01L2933/0066 , H01L2924/0665 , H01L2924/01013 , H01L2924/0103 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A vertical GaN-based LED is made by growing an epitaxial LED structure on a silicon wafer. A silver layer is added and annealed to withstand >450° C. temperatures. A barrier layer (e.g., Ni/Ti) is provided that is effective for five minutes at >450° C. at preventing bond metal from diffusing into the silver. The resulting device wafer structure is then wafer bonded to a carrier wafer structure using a high temperature bond metal (e.g., AlGe) that melts at >380° C. After wafer bonding, the silicon is removed, gold-free electrodes (e.g., Al) are added, and the structure is singulated. High temperature solder (e.g., ZnAl) that is compatible with the electrode metal is used for die attach. Die attach occurs at >380° C. for ten seconds without melting the bond metal or otherwise damaging the device. The entire LED contains no gold, and consequently is manufacturable in a high-volume gold-free semiconductor fabrication facility.
摘要翻译：通过在硅晶片上生长外延LED结构来制造垂直GaN基LED。添加银层并退火以承受> 450℃的温度。提供了在> 450℃有效5分钟的阻挡层（例如Ni / Ti），以防止粘结金属扩散到银中。然后，所得到的器件晶片结构使用在> 380℃熔化的高温接合金属（例如，AlGe）将晶片结合到载体晶片结构。在晶片接合之后，去除硅，无金电极（例如，Al ），并且结构被分割。与电极金属相容的高温焊料（例如ZnAl）用于管芯附着。芯片附着在> 380°C下发生十秒，而不熔化粘结金属或以其他方式损坏器件。整个LED不含金，因此可在大容量无金属半导体制造设备中制造。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式