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1. 发明授权

US09112089B2 Semiconductor chip, display comprising a plurality of semiconductor chips and methods for the production thereof 有权
标题翻译：半导体芯片，包括多个半导体芯片的显示器及其制造方法
公开(公告)号：US09112089B2
公开(公告)日：2015-08-18
申请号：US14008638
申请日：2012-01-30
申请人： Norwin von Malm , Alexander Linkov , Norbert Linder
发明人： Norwin von Malm , Alexander Linkov , Norbert Linder
IPC分类号： H01L33/60 , H01L33/10 , H01L27/15 , H01L33/46 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/58
CPC分类号： H01L33/10 , H01L27/156 , H01L33/32 , H01L33/405 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/60
摘要： An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.
摘要翻译：一种包括半导体材料的半导体本体的一个光电子半导体芯片，一个在发射方向上布置在该半导体本体的下游的一个外耦合面和一个反射镜层，其中半导体本体包括产生辐射的有源层，半导体本体远离外耦合面，并且有源层和镜层之间的间隙被设置为使得由有源层朝向外耦合面发射的辐射干扰在镜面层反射的辐射，使得半导体芯片具有在向前方向上具有选定方向的发射辐射图。

2. 发明申请

US20140061667A1 SEMICONDUCTOR CHIP, DISPLAY COMPRISING A PLURALITY OF SEMICONDUCTOR CHIPS AND METHODS FOR THE PRODUCTION THEREOF 有权
标题翻译：半导体芯片，显示包含多个半导体芯片及其生产方法
公开(公告)号：US20140061667A1
公开(公告)日：2014-03-06
申请号：US14008638
申请日：2012-01-30
申请人： Norwin von Malm , Alexander Linkov , Norbert Linder
发明人： Norwin von Malm , Alexander Linkov , Norbert Linder
IPC分类号： H01L33/10 , H01L33/32 , H01L33/60
CPC分类号： H01L33/10 , H01L27/156 , H01L33/32 , H01L33/405 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/60
摘要： An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.
摘要翻译：一种包括半导体材料的半导体本体的一个光电子半导体芯片，一个在发射方向上布置在该半导体本体的下游的一个外耦合面和一个反射镜层，其中半导体本体包括产生辐射的有源层，半导体本体远离外耦合面，并且有源层和镜层之间的间隙被设置为使得由有源层朝向外耦合面发射的辐射干扰在镜面层反射的辐射，使得半导体芯片具有在向前方向上具有选定方向的发射辐射图。

3. 发明申请

US20130328066A1 OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR THE PRODUCTION THEREOF 有权
标题翻译：光电半导体芯片及其生产方法
公开(公告)号：US20130328066A1
公开(公告)日：2013-12-12
申请号：US13883346
申请日：2011-11-02
申请人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Strassburg , Norwin von Malm
发明人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Strassburg , Norwin von Malm
IPC分类号： H01L33/02
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
摘要翻译：光电子半导体芯片包括具有产生辐射的有源层和辐射发射侧的半导体层堆叠和设置在半导体层堆叠的辐射发射侧的转换层，其中转换层将至少一部分由有源层发射的辐射成为不同波长的辐射，半导体层堆叠的辐射发射侧具有第一纳米结构，并且转换层设置在该第一纳米结构中。

4. 发明授权

US08969900B2 Optoelectronic semiconductor chip and method for the production thereof 有权
标题翻译：光电半导体芯片及其制造方法
公开(公告)号：US08969900B2
公开(公告)日：2015-03-03
申请号：US13883346
申请日：2011-11-02
申请人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Straβburg , Norwin von Malm
发明人： Matthias Sabathil , Alexander Linkov , Christopher Kölper , Martin Straβburg , Norwin von Malm
IPC分类号： H01L29/22 , H01L33/02 , H01L33/20 , H01L33/50 , H01L33/08 , H01L33/24 , B82Y40/00
CPC分类号： H01L33/02 , B82Y40/00 , H01L33/08 , H01L33/20 , H01L33/24 , H01L33/42 , H01L33/501 , H01L33/505 , H01L33/508 , H01L2933/0041 , H01L2933/0083
摘要： An optoelectronic semiconductor chip includes a semiconductor layer stack having an active layer that generates radiation, and a radiation emission side, and a conversion layer disposed on the radiation emission side of the semiconductor layer stack, wherein the conversion layer converts at least a portion of the radiation, which is emitted by the active layer, into radiation of a different wavelength, the radiation emission side of the semiconductor layer stack has a first nanostructuring, and the conversion layer is disposed in this first nanostructuring.
摘要翻译：光电子半导体芯片包括具有产生辐射的有源层和辐射发射侧的半导体层堆叠和设置在半导体层堆叠的辐射发射侧的转换层，其中转换层将至少一部分由有源层发射的辐射成为不同波长的辐射，半导体层堆叠的辐射发射侧具有第一纳米结构，并且转换层设置在该第一纳米结构中。

5. 发明申请

US20140145610A1 LIGHT-EMITTING DIODE ARRANGEMENT HAVING A PIEZO TRANSFORMER 有权
标题翻译：具有PIEZO变压器的发光二极管布置
公开(公告)号：US20140145610A1
公开(公告)日：2014-05-29
申请号：US13820181
申请日：2011-08-24
申请人： Patrick Rode , Norwin von Malm , Lutz Höppel
发明人： Patrick Rode , Norwin von Malm , Lutz Höppel
IPC分类号： F21K99/00 , F21V23/02
CPC分类号： F21K9/50 , F21K9/60 , F21V7/00 , F21V23/02 , F21V23/023 , F21Y2115/10 , H01L41/107
摘要： A light-emitting diode arrangement has a frame-shaped piezo transformer having at least one output-side connection, and having a light-emitting diode module that generates electromagnetic radiation, which module is disposed within the frame-shaped piezo transformer and electrically connects to the output-side connection of the piezo transformer by at least one output-side electrical conductor, wherein radiation emitted by the light-emitting diode module in the direction of the piezo transformer is reflected, at the latter.
摘要翻译：发光二极管装置具有至少一个输出侧连接的框形压电变压器，并且具有产生电磁辐射的发光二极管模块，该模块设置在框形压电变压器内并电连接到通过至少一个输出侧电导体的压电变压器的输出侧连接，其中由发光二极管模块在压电变压器的方向上发射的辐射在后者处被反射。

6. 发明授权

US08716724B2 Optoelectronic projection device 有权
标题翻译：光电投影装置
公开(公告)号：US08716724B2
公开(公告)日：2014-05-06
申请号：US13127328
申请日：2009-11-27
申请人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
发明人： Norwin von Malm , Klaus Streubel , Patrick Rode , Karl Engl , Lutz Höppel , Jürgen Moosburger
IPC分类号： H01L33/62
CPC分类号： H01L33/62 , H01L27/156 , H01L33/22 , H01L33/382 , H01L2924/0002 , H01L2924/00
摘要： An optoelectronic projection device which generates a predefined image during operation, including a semiconductor body having an active layer that generates electromagnetic radiation and a radiation exit side and is an imaging element of the projection device, wherein, to electrically contact the semiconductor body, a first contact layer and a second contact layer are arranged at a rear side of the semiconductor body, the rear side lying opposite the radiation exit side, and are electrically insulated from one another by a separating layer.
摘要翻译：一种光电投影装置，其在工作期间产生预定图像，包括具有产生电磁辐射的有源层和辐射出射侧的半导体本体，并且是投影装置的成像元件，其中，与半导体本体电接触，接触层和第二接触层设置在半导体本体的后侧，后侧与辐射出口侧相对，并且通过分离层彼此电绝缘。

7. 发明授权

US07922358B2 Illumination device, luminaire and display device 有权
标题翻译：照明装置，灯具和显示装置
公开(公告)号：US07922358B2
公开(公告)日：2011-04-12
申请号：US12240392
申请日：2008-09-29
申请人： Norwin von Malm
发明人： Norwin von Malm
IPC分类号： F21V9/00
CPC分类号： G09F21/02 , A41D13/01 , A45C15/06 , A45F3/042 , A45F2003/003 , B60Q1/2696 , B60Q1/30 , F21S43/14 , F21S43/255 , F21Y2105/00 , F21Y2115/15 , G02B5/124 , G08B5/006 , G08B7/062 , G09F9/33 , G09F13/22 , H01L27/3239 , H01L51/5234 , H01L51/5271 , H01L2251/5323 , H01L2251/5361
摘要： An illumination device (1, 1A, 1B) is disclosed. The illumination device (1, 1A, 1B) contains an organic light-emitting component (2, 2A, 2B, 2C, 2C′) containing a functional layer sequence (23, 23A) for generating light, a light passage area (7, 7A, 7B), which is provided for coupling out light emitted by the organic light-emitting component (2, 2A, 2B, 2C, 2C′) from the illumination device (1, 1A, 1B) and for coupling ambient light into the illumination device (1, 1A, 1B) a retroreflector (5, 5A, 5B), which is provided for reflecting at least part of the ambient light coupled in through the light passage area (7, 7A, 7B) back to the light passage area (7, 7A, 7B). The organic light-emitting component (2, 2A, 2B, 2C, 2C′) is embodied such that it is at least partly light-transmissive. The functional layer sequence (23, 23A) of the organic light-emitting component (2, 2A, 2B, 2C, 2C′) is arranged between the light passage area (7, 7A, 7B) and the retroreflector (5, 5A, 5B). A luminaire (10) and a display device (100) are also disclosed.
摘要翻译：公开了一种照明装置（1,1A，1B）。照明装置（1,1A，1B）包含含有用于产生光的功能层序列（23,23A）的有机发光部件（2,2A，2B，2C，2C'），光通过区域（7， 7A，7B），其用于将由有机发光部件（2,2A，2B，2C，2C'）发出的光从照明装置（1,1A，1B）耦合并将环境光耦合到照明装置（1,1A，1B），后向反射器（5,5A，5B），其被设置用于将通过所述光通过区域（7,7A，7B）耦合的环境光的至少一部分反射回所述光通路区域（7,7A，7B）。有机发光部件（2,2A，2B，2C，2C'）被实现为至少部分透光。有机发光部件（2,2A，2B，2C，2C'）的功能层序列（23,23A）设置在光通过区域（7,7A，7B）和后向反射器（5,5A， 5B）。还公开了一种照明器（10）和显示装置（100）。

8. 发明申请

US20090091258A1 Optoelectronic Component and Method for Producing an Optoelectronic Component 审中-公开
标题翻译：光电子元件的制造方法
公开(公告)号：US20090091258A1
公开(公告)日：2009-04-09
申请号：US12235121
申请日：2008-09-22
申请人： Karsten Heuser , Norwin von Malm
发明人： Karsten Heuser , Norwin von Malm
IPC分类号： H01J1/70 , H01J9/12
CPC分类号： H01L33/52 , H01L33/50 , H01L51/5036 , H01L51/5256 , H01L51/5268 , H01L51/5275 , H01L2251/5315 , H01L2933/0041
摘要： An optoelectronic comprises a substrate (1), a first electrode (2) on the substrate (1), a radiation-emitting layer sequence (3) having an active region (30) that emits an electromagnetic primary radiation during operation, a second electrode, which is transparent to the primary radiation, on the radiation-emitting layer sequence (3), and an encapsulation arrangement (10) deposited on the second electrode (4). The encapsulation arrangement (10) has a layer stack having at least one first barrier layer (6) and at least one first wavelength conversion layer (5) that converts the primary radiation at least partly into electromagnetic secondary radiation. The encapsulation arrangement (10) is at least partly transparent to the primary radiation and/or to the secondary radiation.
摘要翻译：光电子包括衬底（1），衬底（1）上的第一电极（2），具有在操作期间发射电磁一次辐射的有源区（30）的辐射发射层序列（3），第二电极，对辐射发射层序列（3）和沉积在第二电极（4）上的封装装置（10）对初级辐射透明。封装装置（10）具有层堆叠，其具有至少一个第一阻挡层（6）和至少一个第一波长转换层（5），其将初级辐射至少部分地转换成电磁次级辐射。封装装置（10）对于初级辐射和/或次级辐射至少部分透明。

9. 发明申请

US20090039272A1 Optoelectronic component 有权
标题翻译：光电元件
公开(公告)号：US20090039272A1
公开(公告)日：2009-02-12
申请号：US12157054
申请日：2008-06-06
申请人： Benjamin Claus Krummacher , Florian Schindler , Norwin von Malm , Manfred Url
发明人： Benjamin Claus Krummacher , Florian Schindler , Norwin von Malm , Manfred Url
IPC分类号： G01T1/24
CPC分类号： H01L27/322 , H01L33/507 , H01L51/5036 , H01L51/5262 , Y10S362/80
摘要： An optoelectronic component comprises a first electrode (3), a radiation-emitting layer sequence (1) having an active region (10) on the first electrode (3), which region has a main extension plane (E) with a surface normal (N) and emits an electromagnetic primary radiation having a non-Lambertian emission characteristic, a second electrode (4) on the radiation-emitting layer sequence (1), said second electrode being transparent to the primary radiation, and a wavelength conversion layer (2) in the beam path of the primary radiation, which converts the primary radiation at least partly into an electromagnetic secondary radiation. In this case, the first electrode (3) is reflective to the primary radiation, the non-Lambertian emission characteristic is given by an intensity I(α) of the primary radiation of the radiation-emitting layer sequence (1) as a function of an emission angle α measured with respect to the surface normal (N), the intensity I(α) increases from a α≧0° with increasing angle α up to a maximum angle αmax, and the conversion probability of the electromagnetic primary radiation in the wavelength conversion layer (2) increases as the emission angle α increases.
摘要翻译：光电子部件包括第一电极（3），在第一电极（3）上具有有源区（10）的辐射发射层序列（1），该区域具有表面法线的主延伸面（E） N）并且发射具有非朗伯发射特性的电磁一次辐射，在辐射发射层序列（1）上的第二电极（4），所述第二电极对于一次辐射是透明的，并且波长转换层）在主辐射的光束路径中，其将初级辐射至少部分地转换成电磁次级辐射。在这种情况下，第一电极（3）对初级辐射是反射的，非朗伯式发射特性由辐射发射层序列（1）的主要辐射的强度I（α）作为相对于表面法线（N）测量的发射角α，强度I（α）从α> 0°增加，角α增加到最大角度alphamax，电磁一次辐射的转换概率波长转换层（2）随着发射角α增加而增加。

10. 发明授权

US09343642B2 Optoelectronic semiconductor chip 有权
标题翻译：光电半导体芯片
公开(公告)号：US09343642B2
公开(公告)日：2016-05-17
申请号：US14009265
申请日：2012-03-28
申请人： Norwin von Malm
发明人： Norwin von Malm
IPC分类号： H01L29/06 , H01L31/00 , H01L27/15 , H01L29/26 , H01L31/12 , H01L33/00 , H01L29/207 , H01L31/0232 , H01L33/62 , H01L25/075 , H01L31/02 , H01L33/60 , H01L33/20 , H01L33/38 , H01L33/40 , H01L33/44
CPC分类号： H01L33/62 , H01L25/0753 , H01L27/153 , H01L31/02019 , H01L31/02327 , H01L33/20 , H01L33/382 , H01L33/405 , H01L33/44 , H01L33/60 , H01L2924/0002 , H01L2933/0016 , H01L2924/00
摘要： An optoelectronic semiconductor chip includes a carrier including a carrier element having a mounting side; one electrically conductive n-type wiring layer arranged at the mounting side; a structured, electrically conductive contact layer having a p-side and n-side contact region and arranged at a side of the n-type wiring layer facing away from the carrier element; at least one insulation region electrically insulating the p-side contact region from the n-side contact region; at least one electrically insulating spacer layer arranged at a side of the n-type wiring layer facing away from the carrier element in a vertical direction between the p-side contact region and the n-type wiring layer, wherein the n-side contact region and the n-type wiring layer electrically conductively connect to one another, and the p-side contact region and the spacer layer border the n-side contact region in a lateral direction; an optoelectronic structure connected to the carrier.
摘要翻译：光电子半导体芯片包括具有安装侧的载体元件的载体; 布置在安装侧的一个导电n型布线层; 结构化的导电接触层，其具有p侧和n侧接触区域，并且布置在所述n型布线层的背离载体元件的一侧; 将所述p侧接触区域与所述n侧接触区域电绝缘的至少一个绝缘区域; 在所述p侧接触区域和所述n型布线层之间沿垂直方向布置在所述n型布线层的背离载体元件的一侧的至少一个电绝缘间隔层，其中所述n侧接触区域并且所述n型布线层彼此导电连接，并且所述p侧接触区域和所述间隔层在横向方向上与所述n侧接触区域接合; 连接到载体的光电结构。

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