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1. 发明授权

US09112089B2 Semiconductor chip, display comprising a plurality of semiconductor chips and methods for the production thereof 有权
标题翻译：半导体芯片，包括多个半导体芯片的显示器及其制造方法
公开(公告)号：US09112089B2
公开(公告)日：2015-08-18
申请号：US14008638
申请日：2012-01-30
申请人： Norwin von Malm , Alexander Linkov , Norbert Linder
发明人： Norwin von Malm , Alexander Linkov , Norbert Linder
IPC分类号： H01L33/60 , H01L33/10 , H01L27/15 , H01L33/46 , H01L33/32 , H01L33/40 , H01L33/50 , H01L33/58
CPC分类号： H01L33/10 , H01L27/156 , H01L33/32 , H01L33/405 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/60
摘要： An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.
摘要翻译：一种包括半导体材料的半导体本体的一个光电子半导体芯片，一个在发射方向上布置在该半导体本体的下游的一个外耦合面和一个反射镜层，其中半导体本体包括产生辐射的有源层，半导体本体远离外耦合面，并且有源层和镜层之间的间隙被设置为使得由有源层朝向外耦合面发射的辐射干扰在镜面层反射的辐射，使得半导体芯片具有在向前方向上具有选定方向的发射辐射图。

2. 发明申请

US20140061667A1 SEMICONDUCTOR CHIP, DISPLAY COMPRISING A PLURALITY OF SEMICONDUCTOR CHIPS AND METHODS FOR THE PRODUCTION THEREOF 有权
标题翻译：半导体芯片，显示包含多个半导体芯片及其生产方法
公开(公告)号：US20140061667A1
公开(公告)日：2014-03-06
申请号：US14008638
申请日：2012-01-30
申请人： Norwin von Malm , Alexander Linkov , Norbert Linder
发明人： Norwin von Malm , Alexander Linkov , Norbert Linder
IPC分类号： H01L33/10 , H01L33/32 , H01L33/60
CPC分类号： H01L33/10 , H01L27/156 , H01L33/32 , H01L33/405 , H01L33/46 , H01L33/50 , H01L33/58 , H01L33/60
摘要： An optoelectronic semiconductor chip including a semiconductor body of semiconductor material, an outcoupling face arranged downstream of the semiconductor body in an emission direction and a mirror layer, wherein the semiconductor body includes an active layer that generates radiation, the mirror layer is arranged on the side of the semiconductor body remote from the outcoupling face, and a gap between the active layer and the mirror layer is set such that radiation emitted by the active layer towards the outcoupling face interferes with radiation reflected at the mirror layer such that the semiconductor chip features an emitted radiation pattern with a selected direction in the forward direction.
摘要翻译：一种包括半导体材料的半导体本体的一个光电子半导体芯片，一个在发射方向上布置在该半导体本体的下游的一个外耦合面和一个反射镜层，其中半导体本体包括产生辐射的有源层，半导体本体远离外耦合面，并且有源层和镜层之间的间隙被设置为使得由有源层朝向外耦合面发射的辐射干扰在镜面层反射的辐射，使得半导体芯片具有在向前方向上具有选定方向的发射辐射图。

3. 发明授权

US08354682B2 Radiation emitting element 有权
标题翻译：辐射发射元件
公开(公告)号：US08354682B2
公开(公告)日：2013-01-15
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grötsch , Norbert Linder , Jürgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译：一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2）（A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

4. 发明申请

US20110297982A1 Optoelectronic Semiconductor Chip 审中-公开
标题翻译：光电半导体芯片
公开(公告)号：US20110297982A1
公开(公告)日：2011-12-08
申请号：US13061514
申请日：2009-07-23
申请人： Norbert Linder , Ralph Wirth , Christopher Wiesmann , Ross Stanley , Romuald Houdre
发明人： Norbert Linder , Ralph Wirth , Christopher Wiesmann , Ross Stanley , Romuald Houdre
IPC分类号： H01L33/60
CPC分类号： H01L33/22 , H01L33/405 , H01L33/46
摘要： A semiconductor chip is specified, comprising an active layer provided for emitting an electromagnetic radiation, and a two-dimensional arrangement of structural units, which is disposed downstream of the active layer in a main emission direction of the semiconductor chip. The structural units are arranged in an arbitrary statistical distribution. Such an arrangement of structural units makes it possible to realize a semiconductor chip having a directional emission characteristic.
摘要翻译：规定了半导体芯片，其包括设置用于发射电磁辐射的有源层和在半导体芯片的主发射方向上设置在有源层下游的结构单元的二维排列。结构单元布置在任意统计分布中。这种结构单元的布置使得可以实现具有定向发射特性的半导体芯片。

5. 发明授权

US07629670B2 Radiation-emitting semi-conductor component 有权
标题翻译：辐射发射半导体元件
公开(公告)号：US07629670B2
公开(公告)日：2009-12-08
申请号：US10561318
申请日：2004-06-25
申请人： Rainer Butendeich , Norbert Linder , Bernd Mayer , Ines Pietzonka
发明人： Rainer Butendeich , Norbert Linder , Bernd Mayer , Ines Pietzonka
IPC分类号： H01S5/323
CPC分类号： H01L33/025 , H01L33/02 , H01S5/3086
摘要： In a radiation-emitting semiconductor component with a layer structure comprising an n-doped confinement layer, a p-doped confinement layer, and an active, photon-emitting layer disposed between the n-doped confinement layer and the p-doped confinement layer, it is provided according to the invention that the n-doped confinement layer is doped with a first n-dopant (or two mutually different n-dopants) for producing high active doping and a sharp doping profile, and the active layer is doped with only one second n-dopant, different from the first dopant, for improving the layer quality of the active layer.
摘要翻译：在具有包括n掺杂约束层，p掺杂约束层和设置在n掺杂约束层和p掺杂约束层之间的有源光子发射层的层结构的发射辐射的半导体部件中，根据本发明提供了n掺杂约束层掺杂有用于产生高有源掺杂和尖锐掺杂分布的第一n掺杂剂（或两个相互不同的n掺杂剂），并且仅有源层掺杂与第一掺杂剂不同的第二n-掺杂剂，用于改善有源层的层质量。

6. 发明申请

US20090029496A1 RADIATION-EMITTING SEMICONDUCTOR BODY FOR A VERTICALLY EMITTING LASER AND METHOD FOR PRODUCING SAME 有权
标题翻译：用于垂直发射激光的辐射发射半导体体及其制造方法
公开(公告)号：US20090029496A1
公开(公告)日：2009-01-29
申请号：US12240147
申请日：2008-09-29
申请人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
发明人： Wolfgang Schmid , Klaus Streubel , Norbert Linder
IPC分类号： H01L21/02
CPC分类号： H01S5/14 , H01S5/18308 , H01S5/2072
摘要： The present invention concerns a radiation-emitting semiconductor body with a vertical emission direction, a radiation-generating active layer, and a current-conducting layer having a current-blocking region and a current-permeable region, the semiconductor body being provided for a vertically emitting laser with an external resonator, and the external resonator having a defined resonator volume that overlaps with the current-permeable region.
摘要翻译：本发明涉及具有垂直发射方向的辐射发射半导体本体，辐射发生有源层和具有电流阻挡区域和导电区域的导电层，该半导体本体设置为垂直发射具有外部谐振器的激光器，并且外部谐振器具有与导电性区域重叠的限定的谐振器体积。

7. 发明申请

US20080080582A1 Optically Pumped Semiconductor Device 有权
标题翻译：光泵浦半导体器件
公开(公告)号：US20080080582A1
公开(公告)日：2008-04-03
申请号：US11579196
申请日：2005-04-11
申请人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
发明人： Christian Karnutsch , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/183 , H01S5/026
CPC分类号： H01S5/18305 , H01S5/026 , H01S5/041 , H01S5/141 , H01S5/18313 , H01S5/18327 , H01S5/18388 , H01S5/32341
摘要： A semiconductor device comprising an optically pumped vertical emitter having an active vertical emitter layer (3), and a pump radiation source, which is used to generate a pump radiation field which propagates in the lateral direction and optically pumps the vertical emitter layer (3) in a pump region, the wavelength of the pump radiation field being smaller than the wavelength of the radiation field (12) generated by the vertical emitter. The pump radiation source has an active pump layer (2), which is arranged downstream of the vertical emitter layer (3) in the vertical direction and which at least partly overlaps the vertical emitter layer as seen in the vertical direction, the active pump layer (2) being arranged in such a way that the pump radiation field generated during operation has a higher power than a parasitic laterally propagating radiation field generated by the vertical emitter layer (3) or that the generation of a parasitic laterally propagating radiation field by the vertical emitter layer (3) is suppressed.
摘要翻译：一种半导体器件，包括具有有源垂直发射极层（3）的光泵浦垂直发射器和用于产生在横向方向上传播并泵浦垂直发射极层（3）的泵浦辐射场的泵浦辐射源，在泵浦区域中，泵浦辐射场的波长小于由垂直发射器产生的辐射场（12）的波长。泵浦辐射源具有主动泵浦层（2），其在垂直方向上布置在垂直发射极层（3）的下游，并且在垂直方向上至少部分地与垂直发射极层重叠，主动泵浦层（2）被布置成使得在操作期间产生的泵浦辐射场具有比由垂直发射极层（3）产生的寄生横向传播辐射场更高的功率，或者由所产生的寄生横向传播辐射场垂直发射极层（3）被抑制。

8. 发明申请

US20080035944A1 Radiation emitting element 有权
标题翻译：辐射发射元件
公开(公告)号：US20080035944A1
公开(公告)日：2008-02-14
申请号：US11891783
申请日：2007-08-13
申请人： Franz Eberhard , Stefan Grotsch , Norbert Linder , Jurgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
发明人： Franz Eberhard , Stefan Grotsch , Norbert Linder , Jurgen Moosburger , Klaus Streubel , Ralph Wirth , Matthias Sabathil , Julius Muschaweck , Krister Bergenek
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , G02F1/13362 , H01L33/46 , H01L33/58
摘要： A radiation-emitting component (10) having a layer stack (1) which is based on a semiconductor material and which has an active layer sequence (4) for generating electromagnetic radiation, and a filter element (2) which is arranged after the active layer sequence (4) in the irradiation direction (A) and by means of which a first radiation component is transmitted, and a second radiation component is reflected into the layer stack (1), wherein the second radiation component is subjected to a deflection process or an absorption and emission process, and the deflected or emitted radiation impinges on the filter element (2).
摘要翻译：一种具有基于半导体材料并具有用于产生电磁辐射的有源层序列（4）的层堆叠（1）的辐射发射部件（10），以及布置在所述有源层之后的过滤元件（2）（A）中的第一辐射分量，并且第二辐射分量被反射到层叠体（1）中，其中第二辐射分量经受偏转过程或吸收和发射过程，并且偏转或发射的辐射撞击在过滤元件（2）上。

9. 发明授权

US07300808B2 Optically pumped, surface-emitting semiconductor laser device and method for the manufacture thereof 有权
标题翻译：光学泵浦，表面发射半导体激光器件及其制造方法
公开(公告)号：US07300808B2
公开(公告)日：2007-11-27
申请号：US10902342
申请日：2004-07-29
申请人： Tony Albrecht , Norbert Linder , Johann Luft
发明人： Tony Albrecht , Norbert Linder , Johann Luft
IPC分类号： H01L21/20
CPC分类号： H01S5/18305 , B82Y20/00 , H01S3/1062 , H01S3/109 , H01S5/026 , H01S5/041 , H01S5/1017 , H01S5/1071 , H01S5/1075 , H01S5/1082 , H01S5/141 , H01S5/16 , H01S5/183 , H01S5/1835 , H01S5/2022 , H01S5/2214 , H01S5/34313 , H01S5/3432 , H01S5/4031 , H01S5/4056 , H01S2301/166
摘要： The invention is directed to an optically pumped surface-emitting semiconductor laser device having at least one radiation-generating quantum well structure and at least one pump radiation source for optically pumping the quantum well structure, whereby the pump radiation source comprises an edge-emitting semiconductor structure. The radiation-generating quantum well structure and the edge-emitting semiconductor structure are epitaxially grown on a common substrate. A very efficient and uniform optical pumping of the radiation-generating quantum well structure is advantageously possible with this monolithically produced semiconductor laser device. Methods for manufacturing inventive semiconductor laser devices are also specified.
摘要翻译：本发明涉及一种光泵浦表面发射半导体激光器件，其具有至少一个辐射产生量子阱结构和用于光学泵浦量子阱结构的至少一个泵浦辐射源，由此泵浦辐射源包括边缘发射半导体结构体。辐射产生量子阱结构和边缘发射半导体结构在公共衬底上外延生长。利用这种单片制造的半导体激光装置，可以有利地实现发射量子阱结构的非常有效和均匀的光泵浦。还规定了制造本发明的半导体激光器件的方法。

10. 发明授权

US07050471B2 Semiconductor laser and optically pumped semiconductor device 有权
标题翻译：半导体激光器和光泵浦半导体器件
公开(公告)号：US07050471B2
公开(公告)日：2006-05-23
申请号：US10791055
申请日：2004-03-01
申请人： Peter Brick , Tony Albrecht , Norbert Linder , Wolfgang Schmid
发明人： Peter Brick , Tony Albrecht , Norbert Linder , Wolfgang Schmid
IPC分类号： H01S5/00 , H01S3/04
CPC分类号： B82Y20/00 , B82Y10/00 , H01S5/026 , H01S5/041 , H01S5/101 , H01S5/105 , H01S5/141 , H01S5/18319 , H01S5/4056
摘要： A semiconductor laser with a semiconductor body (1), which has a periodic arrangement of cutouts (2) or in which a period arrangement of semiconductor regions is formed, so that the radiation generated by the semiconductor laser is not capable of propagating within this periodic arrangement, the resonator (3) of the semiconductor laser being omitted from the periodic arrangement in the lateral direction. Furthermore, an optically pumped semiconductor device is disclosed with a vertical emitter (13) comprising a quantum well structure (7), which is pumped by means of a semiconductor laser of this type or into which the pump radiation of a pump radiation source is coupled by means of a corresponding waveguide (22).
摘要翻译：一种具有半导体本体（1）的半导体激光器，其具有切口（2）的周期性布置或其中形成半导体区域的周期布置，使得由半导体激光器产生的辐射不能在该周期性范围内传播在横向上从周期性布置中省略了半导体激光器的谐振器（3）。此外，公开了一种具有垂直发射器（13）的光学泵浦半导体器件，该垂直发射器（13）包括量子阱结构（7），该量子阱结构（7）借助于这种类型的半导体激光器泵浦，或者泵浦辐射源的泵浦辐射耦合到该半导体激光器借助于相应的波导（22）。

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