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1. 发明申请

US20220230834A1 ELECTRON BEAM WRITING APPARATUS AND CATHODE LIFE SPAN PREDICTION METHOD 有权
公开(公告)号：US20220230834A1
公开(公告)日：2022-07-21
申请号：US17577630
申请日：2022-01-18
申请人： NUFLARE TECHNOLOGY, INC.
发明人： Satoshi NAKAHASHI , Nobuo MIYAMOTO , Takahito NAKAYAMA , Shunji SHINKAWA
IPC分类号： H01J37/073 , H01J37/317
摘要： An electron beam writing apparatus comprising, a cathode configured to emit an electron beam, a condition controller configured to change a condition under which the electron beam is emitted from the cathode in a plurality of ways, and a prediction unit configured to predict a life span of the cathode based on a temporal change in an amount of fluctuation of a beam characteristic of the electron beam to a change in the condition when the condition is changed.

2. 发明申请

US20230111566A1 CONTROL METHOD OF WRITING APPARATUS AND WRITING APPARATUS 有权
公开(公告)号：US20230111566A1
公开(公告)日：2023-04-13
申请号：US17962825
申请日：2022-10-10
申请人： NuFlare Technology, Inc.
发明人： Eita FUJISAKI , Takahito NAKAYAMA
IPC分类号： H01J37/04 , H01J37/317 , H01J37/20 , G03F7/20
摘要： A writing apparatus of the embodiments of the present invention is a writing apparatus that irradiates a predetermined position on an irradiation target with multiple charged particle beams to write a predetermined pattern on the irradiation target, the apparatus comprising: a beam generation mechanism configured to generate multiple charged particle beams; a blanking aperture mechanism configured to perform blanking control of the generated multiple charged particle beams; a stage configured to have the irradiation target mounted thereon and to be movable; and a controller configured to control the writing apparatus, wherein the controller controls the blanking aperture mechanism and the stage to move the stage in an in-plane direction of a surface of the irradiation target during a blanking period in preparatory phase for writing.

3. 发明申请

US20130216953A1 ELECTRON BEAM WRITING APPARATUS AND ELECTRON BEAM WRITING METHOD 有权
标题翻译：电子束写入装置和电子束写入方法
公开(公告)号：US20130216953A1
公开(公告)日：2013-08-22
申请号：US13768258
申请日：2013-02-15
申请人： NuFlare Technology, Inc.
发明人： Takanao TOUYA , Takahito NAKAYAMA
IPC分类号： G21K5/08
CPC分类号： G21K5/08 , B82Y10/00 , B82Y40/00 , H01J37/09 , H01J37/12 , H01J37/3174
摘要： An electron beam writing apparatus comprising a stage that a sample is placed on, an electron optical column, an electron gun emitting an electron beam disposed in the optical column, an electrostatic lens provided with electrodes aligned in an axial direction of the electron beam disposed in the optical column, and a voltage supply device for applying positive voltage constantly to the electrostatic lens. A shield plate is disposed between the XY stage and the electron optical column to block reflected electrons or secondary electrons generated by irradiation to the sample with the electron beam. The electrostatic lens is disposed immediately above the shield plate to change a focal position of the electron beam. A voltage supply device applies a positive voltage constantly to the electrostatic lens.
摘要翻译：一种电子束写入装置，包括放置样品的电极，电子光学柱，发射设置在光学柱中的电子束的电子枪，设置有沿着电子束的轴向排列的电极的静电透镜，光学柱，以及用于向静电透镜恒定施加正电压的电压供给装置。屏蔽板设置在XY平台和电子光学柱之间以阻挡通过用电子束照射到样品产生的反射电子或二次电子。静电透镜设置在屏蔽板的正上方，以改变电子束的焦点位置。电压供给装置将静电透镜恒定地施加正电压。

4. 发明申请

US20200258715A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD 审中-公开
公开(公告)号：US20200258715A1
公开(公告)日：2020-08-13
申请号：US16782156
申请日：2020-02-05
申请人： NuFlare Technology, Inc.
发明人： Takahito NAKAYAMA , Yuji Abe
IPC分类号： H01J37/304 , H01J37/317
摘要： A charged particle beam writing apparatus includes a writer writing a pattern on a surface of a substrate using a charged particle beam, a measurement unit measuring a height of the surface of a central portion of the substrate at a plurality of positions in the central portion, a generator performing fitting using a first polynomial on measurement values from the measurement unit, calculating, by extrapolation using the first polynomial, a first height distribution of the height of the surface of a peripheral portion of the substrate, performing fitting using a second polynomial, which is of a higher order than the first polynomial, on the measurement values, calculating a second height distribution of the height of the surface of the central portion by interpolation using the second polynomial, and generating a height distribution of the substrate by combining the first height distribution and the second height distribution, and a controller adjusting a focal position of the charged particle beam based on the height of the surface at a writing position, the height being calculated from the height distribution of the substrate.

5. 发明申请

US20180076002A1 CHARGED PARTICLE BEAM WRITING APPARATUS, METHOD OF ADJUSTING BEAM INCIDENT ANGLE TO TARGET OBJECT SURFACE, AND CHARGED PARTICLE BEAM WRITING METHOD 审中-公开
公开(公告)号：US20180076002A1
公开(公告)日：2018-03-15
申请号：US15719820
申请日：2017-09-29
申请人： NuFlare Technology, Inc.
发明人： Takahito NAKAYAMA , Takanao Touya
IPC分类号： H01J37/04 , B82Y40/00 , H01J37/317 , B82Y10/00 , H01J37/10
CPC分类号： H01J37/045 , B82Y10/00 , B82Y40/00 , H01J37/10 , H01J37/3174 , H01J2237/30461 , H01J2237/31776
摘要： A charged particle beam writing apparatus according to one aspect of the present invention includes an emission unit to emit a charged particle beam, an electron lens to converge the charged particle beam, a blanking deflector, arranged backward of the electron lens with respect to a direction of an optical axis, to deflect the charged particle beam in the case of performing a blanking control of switching between beam-on and beam-off, a blanking aperture member, arranged backward of the blanking deflector with respect to the direction of the optical axis, to block the charged particle beam having been deflected to be in a beam-off state, and a magnet coil, arranged in a center height position of the blanking deflector, to deflect the charged particle beam.

6. 发明申请

US20230102923A1 CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS 有权
公开(公告)号：US20230102923A1
公开(公告)日：2023-03-30
申请号：US18053135
申请日：2022-11-07
申请人： NuFlare Technology, Inc.
发明人： Haruyuki NOMURA , Takahito NAKAYAMA
IPC分类号： H01J37/304 , H01J37/317 , H01J37/244 , G03F7/20
摘要： The purpose of the present invention is to correct a beam irradiation position shift caused by charging phenomena with high accuracy. A charged particle beam writing method includes virtually dividing a writing region of the substrate so as to have a predetermined mesh size and calculating a pattern density distribution representing an arrangement ratio of the pattern for each mesh region, calculating a dose distribution using the pattern density distribution, calculating an irradiation amount distribution using the pattern density distribution and the dose distribution, calculating a fogging charged particle amount distribution, calculating a charge amount distribution due to direct charge and a charge amount distribution due to fogging charge, calculating a position shift of a writing position based on the charge amount distribution due to direct charge and the charge amount distribution due to fogging charge, correcting an irradiation position using the position shift, and irradiating the corrected irradiation position with the charged particle beam with which a potential of a surface of the substrate becomes higher than a potential of a bottom surface of ae potential regulation member.

7. 发明申请

US20230078311A1 MULTI-CHARGED-PARTICLE-BEAM WRITING METHOD, MULTI-CHARGED-PARTICLE-BEAM WRITING APPARATUS, AND COMPUTER-READABLE RECORDING MEDIUM 有权
公开(公告)号：US20230078311A1
公开(公告)日：2023-03-16
申请号：US17885774
申请日：2022-08-11
申请人： NuFlare Technology, Inc.
发明人： Taku YAMADA , Takahito NAKAYAMA
IPC分类号： H01J37/304 , H01J37/317 , H01J37/04 , H01J37/147 , G03F7/20
摘要： In one embodiment, a multi-charged-particle-beam writing method includes dividing a data path into a plurality of first blocks based on at least either one of each of a plurality of input/output circuits and a plurality of wiring groups, and calculating a first shift amount for multiple beams for each of the plurality of first blocks. The data path is for inputting control data to a cell array on a blanking aperture array substrate. The control data is for controlling ON/OFF of each beam of the multiple beams. Each of the plurality of wiring groups includes a plurality of pieces of wiring connected to the plurality of input/output circuits and grouped together based on inter-wiring distance. The first shift amount is due to at least one of an electric field and a magnetic field for each of the plurality of first blocks. An irradiation position or a dose of the multiple beams is corrected based on the first shift amount, and irradiation is performed.

8. 发明申请

US20190237297A1 CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS 审中-公开
公开(公告)号：US20190237297A1
公开(公告)日：2019-08-01
申请号：US16260445
申请日：2019-01-29
申请人： NuFlare Technology, Inc.
发明人： Rieko NISHIMURA , Takahito NAKAYAMA
IPC分类号： H01J37/304 , H01J37/317 , H01J37/20 , H01J37/147 , H01J37/24
摘要： A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted.

9. 发明申请

US20190122859A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD 审中-公开
公开(公告)号：US20190122859A1
公开(公告)日：2019-04-25
申请号：US16160210
申请日：2018-10-15
申请人： NuFlare Technology, Inc.
发明人： Takahito NAKAYAMA
IPC分类号： H01J37/317 , H01J37/304 , G03F9/00
摘要： In one embodiment, a charged particle beam writing apparatus includes a writer writing a pattern on a substrate on a stage with a charged particle beam, a mark substrate disposed on the stage and having a mark, an irradiation position detector detecting an irradiation position of the charged particle beam on a mark surface, a height detector detecting a surface height of the substrate and the mark substrate, a drift correction unit calculating an amount of drift correction, and a writing control unit correcting the irradiation position of the charged particle beam by using the amount of drift correction. The mark substrate has a pattern region with a plurality of marks and a non-pattern region with no pattern therein, and at least part of the non-pattern region is disposed between different portions of the pattern region. The height detector detects a height of a detection point in the non-pattern region.

10. 发明申请

US20190122858A1 CHARGED PARTICLE BEAM WRITING APPARATUS AND CHARGED PARTICLE BEAM WRITING METHOD 审中-公开
公开(公告)号：US20190122858A1
公开(公告)日：2019-04-25
申请号：US16160174
申请日：2018-10-15
申请人： NuFlare Technology, Inc.
发明人： Takahito NAKAYAMA
IPC分类号： H01J37/317 , H01J37/304 , G03F9/00
摘要： In one embodiment, a charged particle beam writing apparatus includes a writer writing a pattern on a substrate placed on a stage by irradiating the substrate with a charged particle beam, a height detector detecting a surface height of a mark on the stage, an irradiation position detector detecting an irradiation position of the charged particle beam on the mark surface by irradiation with the charged particle beam focused at the surface height of the mark, a drift correction unit calculating an amount of drift of the charged particle beam on the mark surface from the irradiation position detected by the irradiation position detector, and generating correction information for correcting a shift in irradiation position caused by a drift on the substrate surface based on the amount of drift, and a writing control unit correcting the irradiation position of the charged particle beam by using the correction information.

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