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1. 发明申请

US20150236058A1 IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE 有权
标题翻译：具有开关深度分离隔离结构的图像传感器像素单元
公开(公告)号：US20150236058A1
公开(公告)日：2015-08-20
申请号：US14704493
申请日：2015-05-05
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu , Rongsheng Yang , Gang Chen , Howard E. Rhodes , Sohei Manabe , Dyson H. Tai
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/1463 , H01L27/14601 , H01L27/14607 , H01L27/14612 , H01L27/1464 , H01L27/14643 , H04N5/378
摘要： A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
摘要翻译：像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。浮置扩散部设置在设置在第一区域的外延层中的阱区域中。耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管传输到浮动扩散。

2. 发明授权

US09496304B2 Image sensor pixel cell with switched deep trench isolation structure 有权
标题翻译：具有开关深沟槽隔离结构的图像传感器像素单元
公开(公告)号：US09496304B2
公开(公告)日：2016-11-15
申请号：US14704493
申请日：2015-05-05
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu , Rongsheng Yang , Gang Chen , Howard E. Rhodes , Sohei Manabe , Dyson H. Tai
IPC分类号： H01L29/66 , H01L27/146 , H04N5/378
CPC分类号： H01L27/1463 , H01L27/14601 , H01L27/14607 , H01L27/14612 , H01L27/1464 , H01L27/14643 , H04N5/378
摘要： A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
摘要翻译：像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。浮置扩散部设置在设置在第一区域的外延层中的阱区域中。耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散。

3. 发明授权

US09054007B2 Image sensor pixel cell with switched deep trench isolation structure 有权
标题翻译：具有开关深沟槽隔离结构的图像传感器像素单元
公开(公告)号：US09054007B2
公开(公告)日：2015-06-09
申请号：US13968210
申请日：2013-08-15
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu , Rongsheng Yang , Gang Chen , Howard E. Rhodes , Sohei Manabe , Hsin-Chih Tai
IPC分类号： H01L27/146 , H01L27/092
CPC分类号： H01L27/14643 , H01L27/0928 , H01L27/14601 , H01L27/1463 , H01L27/1464
摘要： A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
摘要翻译：像素单元包括设置在半导体材料的第一区域中的外延层中的光电二极管。浮置扩散部设置在设置在第一区域的外延层中的阱区域中。传输晶体管设置在第一区域中并且耦合在光电二极管和浮动扩散之间以选择性地将图像电荷从光电二极管转移到浮动扩散。在DTI结构内部布置有介电层的深沟槽隔离（DTI）结构设置在半导体材料中，将DTI结构的一侧上的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离开。响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散，DTI结构内部的掺杂半导体材料选择性地耦合到读出脉冲电压。

4. 发明申请

US20150048427A1 IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE 有权
标题翻译：具有开关深度分离隔离结构的图像传感器像素单元
公开(公告)号：US20150048427A1
公开(公告)日：2015-02-19
申请号：US13968210
申请日：2013-08-15
申请人： Omnivision Technologies, Inc.
发明人： Sing-Chung Hu , Rongsheng Yang , Gang Chen , Howard E. Rhodes , Sohei Manabe , Hsin-Chih Tai
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/0928 , H01L27/14601 , H01L27/1463 , H01L27/1464
摘要： A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is disposed in the first region and coupled between the photodiode and the floating diffusion to selectively transfer image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure lined with a dielectric layer inside the DTI structure is disposed in the semiconductor material isolates the first region on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. Doped semiconductor material inside the DTI structure is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
摘要翻译：像素单元包括设置在半导体材料的第一区域中的外延层中的光电二极管。浮置扩散部设置在设置在第一区域的外延层中的阱区域中。传输晶体管设置在第一区域中并且耦合在光电二极管和浮动扩散之间以选择性地将图像电荷从光电二极管转移到浮动扩散。在DTI结构内部布置有介电层的深沟槽隔离（DTI）结构设置在半导体材料中，将DTI结构的一侧上的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离开。响应于传输晶体管选择性地将图像电荷从光电二极管转移到浮动扩散，DTI结构内部的掺杂半导体材料选择性地耦合到读出脉冲电压。

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