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1. 发明申请

US20220392943A1 STACK CHIP AIR GAP HEAT INSULATOR 有权
公开(公告)号：US20220392943A1
公开(公告)日：2022-12-08
申请号：US17819821
申请日：2022-08-15
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu
IPC分类号： H01L27/146 , H01L31/024 , H01L23/467
摘要： Image sensors include a pixel die that is stacked on a logic die. The logic die includes at least one function logic element disposed on a bond side thereof, and a logic oxide array of raised logic oxide features also disposed on the bond side. The pixel die includes a pixel array disposed on a light receiving side thereof, and a pixel oxide array of raised pixel oxide features disposed on a bond side of the pixel die. A plurality of outer bonds is disposed between an outer region of the logic die and an outer region of the pixel die. A plurality of inner bonds is formed at an inner region of the image sensor between the pixel oxide array and the logic oxide array, the inner bonds being spaced apart by a plurality of fluidly connected air gaps that extend between the logic die and the pixel die.

2. 发明授权

US08933494B1 Image sensor pixel cell having dual self-aligned implants next to storage gate 有权
标题翻译：图像传感器像素单元具有在存储门旁边的双自对准植入物
公开(公告)号：US08933494B1
公开(公告)日：2015-01-13
申请号：US14038336
申请日：2013-09-26
申请人： Omnivision Technologies, Inc.
发明人： Sing-Chung Hu , Dajiang Yang , Zhenhong Fu
IPC分类号： H01L27/148
CPC分类号： H01L27/14656 , H01L27/14614
摘要： A pixel cell includes a storage transistor including a deep implant storage region having a first polarity is implanted in a semiconductor substrate to store image charge accumulated by a photodiode. A transfer transistor is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a readout node. A first shallow implant region having the first polarity is implanted in the semiconductor substrate under a first spacer region between a transfer gate of the transfer transistor and a storage gate of the storage transistor. A second shallow implant region having the first polarity is implanted in the semiconductor substrate under a second spacer region between the storage gate and the output gate.
摘要翻译：像素单元包括存储晶体管，其包括具有第一极性的深注入存储区域注入到半导体衬底中以存储由光电二极管累积的图像电荷。传输晶体管耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。具有第一极性的第一浅注入区域在转移晶体管的转移栅极和存储晶体管的存储栅极之间的第一间隔区域内注入到半导体衬底中。具有第一极性的第二浅注入区域在存储栅极和输出栅极之间的第二间隔区域内注入到半导体衬底中。

3. 发明授权

US10079261B1 Raised electrode to reduce dark current 有权
公开(公告)号：US10079261B1
公开(公告)日：2018-09-18
申请号：US15680005
申请日：2017-08-17
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Qin Wang , Bill Phan , Sing-Chung Hu , Gang Chen
IPC分类号： H01L27/146 , H01L29/417 , H01L21/3215 , H01L21/02 , H01L21/306 , H01L21/311
CPC分类号： H01L27/14643 , H01L21/02532 , H01L21/30604 , H01L21/31111 , H01L21/3215 , H01L27/1461 , H01L27/14612 , H01L27/1463 , H01L27/14636 , H01L27/14689 , H01L29/41783
摘要： An image sensor includes a plurality of photodiodes and a floating diffusion disposed in a semiconductor material. The image sensor also includes a plurality of transfer gates coupled between the plurality of photodiodes and the floating diffusion to transfer the image charge generated in the plurality of photodiodes into the floating diffusion. Peripheral circuitry is disposed proximate to the plurality of photodiodes and coupled to receive the image charge from the plurality of photodiodes. A shallow trench isolation structure is laterally disposed, at least in part, between the plurality of photodiodes and the peripheral circuitry to prevent electrical crosstalk between the plurality of photodiodes and the peripheral circuitry. The peripheral circuitry includes one or more transistors including a source electrode and a drain electrode that are raised above a surface of the semiconductor material.

4. 发明申请

US20150236058A1 IMAGE SENSOR PIXEL CELL WITH SWITCHED DEEP TRENCH ISOLATION STRUCTURE 有权
标题翻译：具有开关深度分离隔离结构的图像传感器像素单元
公开(公告)号：US20150236058A1
公开(公告)日：2015-08-20
申请号：US14704493
申请日：2015-05-05
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu , Rongsheng Yang , Gang Chen , Howard E. Rhodes , Sohei Manabe , Dyson H. Tai
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/1463 , H01L27/14601 , H01L27/14607 , H01L27/14612 , H01L27/1464 , H01L27/14643 , H04N5/378
摘要： A pixel cell includes a photodiode disposed in an epitaxial layer in a first region of semiconductor material to accumulate image charge. A floating diffusion is disposed in a well region disposed in the epitaxial layer in the first region. A transfer transistor is coupled to selectively transfer the image charge from the photodiode to the floating diffusion. A deep trench isolation (DTI) structure disposed in the semiconductor material. The DTI structure isolates the first region of the semiconductor material on one side of the DTI structure from a second region of the semiconductor material on an other side of the DTI structure. The DTI structure includes a doped semiconductor material disposed inside the DTI structure that is selectively coupled to a readout pulse voltage in response to the transfer transistor selectively transferring the image charge from the photodiode to the floating diffusion.
摘要翻译：像素单元包括设置在半导体材料的第一区域中的外延层中以累积图像电荷的光电二极管。浮置扩散部设置在设置在第一区域的外延层中的阱区域中。耦合转移晶体管以选择性地将图像电荷从光电二极管转移到浮动扩散。设置在半导体材料中的深沟槽隔离（DTI）结构。 DTI结构将DTI结构的一侧上的半导体材料的第一区域与DTI结构的另一侧上的半导体材料的第二区域隔离。 DTI结构包括设置在DTI结构内部的掺杂半导体材料，其被选择性地耦合到读出脉冲电压，响应于传输晶体管选择性地将图像电荷从光电二极管传输到浮动扩散。

5. 发明申请

US20140299957A1 IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION 有权
标题翻译：具有金属接触的图像传感器通过具有隔离区域的接触蚀刻停止层
公开(公告)号：US20140299957A1
公开(公告)日：2014-10-09
申请号：US13858754
申请日：2013-04-08
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu , Dajiang Yang , Oray Orkun Cellek , Hsin-Chih Tai , Gang Chen
IPC分类号： H01L27/146
CPC分类号： H01L27/1463 , H01L27/14636 , H01L27/14643
摘要： An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.
摘要翻译：图像传感器像素包括设置在半导体层中的一个或多个光电二极管。像素电路设置在耦合到一个或多个光电二极管的半导体层中。钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。接触蚀刻停止层设置在钝化层上。一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。

6. 发明授权

US11626433B2 Transistors having increased effective channel width 有权
公开(公告)号：US11626433B2
公开(公告)日：2023-04-11
申请号：US16830078
申请日：2020-03-25
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Sing-Chung Hu , Seong Yeol Mun , Bill Phan
IPC分类号： H01L27/146
摘要： Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. At least three substrate trench structures are formed in the semiconductor substrate, defining two nonplanar structures, each having a plurality of sidewall portions. An isolation layer includes at least three isolation layer trench structures, each being disposed in a respective one of the three substrate trench structures. A gate includes three fingers, each being disposed in a respective one of the three isolation layer trench structures. An electron channel of the transistor extends along the plurality of sidewall portions of the two nonplanar structures in a channel width plane.

7. 发明授权

US09419044B2 Image sensor pixel having storage gate implant with gradient profile 有权
标题翻译：图像传感器像素，具有具有梯度轮廓的存储栅极注入
公开(公告)号：US09419044B2
公开(公告)日：2016-08-16
申请号：US14255535
申请日：2014-04-17
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Dajiang Yang , Gang Chen , Zhenhong Fu , Duli Mao , Eric A. G. Webster , Sing-Chung Hu , Dyson H. Tai
IPC分类号： H01L27/00 , H01J40/14 , H01L27/146 , H01L21/00 , H01L31/18 , H01L27/148
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/14614 , H01L27/14689
摘要： A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.
摘要翻译：像素单元包括设置在半导体衬底中的存储晶体管。存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。转移晶体管包括设置在半导体衬底上的转移栅极。输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。输出晶体管包括设置在半导体衬底上的输出门。

8. 发明申请

US20150303235A1 IMAGE SENSOR PIXEL HAVING STORAGE GATE IMPLANT WITH GRADIENT PROFILE 有权
标题翻译：具有梯级轮廓的储存盖植入物的图像传感器像素
公开(公告)号：US20150303235A1
公开(公告)日：2015-10-22
申请号：US14255535
申请日：2014-04-17
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Dajiang Yang , Gang Chen , Zhenhong Fu , Duli Mao , Eric A. G. Webster , Sing-Chung Hu , Dyson H. Tai
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14612 , H01L27/14614 , H01L27/14689
摘要： A pixel cell includes a storage transistor disposed in a semiconductor substrate. The storage transistor includes a storage gate disposed over the semiconductor substrate, and a storage gate implant that is annealed and has a gradient profile in the semiconductor substrate under the storage transistor gate to store image charge accumulated by a photodiode disposed in the semiconductor substrate. A transfer transistor is disposed in the semiconductor substrate and is coupled between the photodiode and an input of the storage transistor to selectively transfer the image charge from the photodiode to the storage transistor. The transfer transistor includes a transfer gate disposed over the semiconductor substrate. An output transistor is coupled to an output of the storage transistor to selectively transfer the image charge from the storage transistor to a read out node. The output transistor includes an output gate disposed over the semiconductor substrate.
摘要翻译：像素单元包括设置在半导体衬底中的存储晶体管。存储晶体管包括设置在半导体衬底上的存储栅极，以及在存储晶体管栅极下的半导体衬底中退火并具有梯度分布的存储栅极注入，以存储由设置在半导体衬底中的光电二极管累积的图像电荷。传输晶体管设置在半导体衬底中并耦合在光电二极管和存储晶体管的输入端之间，以选择性地将图像电荷从光电二极管转移到存储晶体管。转移晶体管包括设置在半导体衬底上的转移栅极。输出晶体管耦合到存储晶体管的输出，以选择性地将图像电荷从存储晶体管传送到读出节点。输出晶体管包括设置在半导体衬底上的输出门。

9. 发明授权

US08969775B2 High dynamic range pixel having a plurality of amplifier transistors 有权
标题翻译：具有多个放大器晶体管的高动态范围像素
公开(公告)号：US08969775B2
公开(公告)日：2015-03-03
申请号：US13781388
申请日：2013-02-28
申请人： Omnivision Technologies, Inc.
发明人： Gang Chen , Zhiqiang Lin , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai
IPC分类号： H01L27/00 , H04N5/335
CPC分类号： H04N5/335 , H04N5/2355 , H04N5/3559 , H04N5/3745 , H04N5/37452
摘要： A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.
摘要翻译：用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

10. 发明申请

US20140239154A1 HIGH DYNAMIC RANGE PIXEL HAVING A PLURALITY OF AMPLIFIER TRANSISTORS 有权
标题翻译：具有多个放大器晶体管的高动态范围像素
公开(公告)号：US20140239154A1
公开(公告)日：2014-08-28
申请号：US13781388
申请日：2013-02-28
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Gang Chen , Zhiqiang Lin , Sing-Chung Hu , Duli Mao , Hsin-Chih Tai
IPC分类号： H01L27/148
CPC分类号： H04N5/335 , H04N5/2355 , H04N5/3559 , H04N5/3745 , H04N5/37452
摘要： A pixel cell for use in a high dynamic range image sensor includes a photodiode disposed in semiconductor material to accumulate charge in response to light incident upon the photodiode. A transfer transistor is disposed in the semiconductor material and is coupled between a floating diffusion and the photodiode. A first amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a first output signal of the pixel cell. A second amplifier transistor is disposed in the semiconductor material having a gate terminal coupled to the floating diffusion and a source terminal coupled to generate a second output signal of the pixel cell.
摘要翻译：用于高动态范围图像传感器的像素单元包括设置在半导体材料中的光电二极管，以响应入射到光电二极管上的光来积累电荷。传输晶体管设置在半导体材料中并且耦合在浮动扩散和光电二极管之间。第一放大器晶体管设置在半导体材料中，其栅极端子耦合到浮动扩散部分，源极端子被耦合以产生像素单元的第一输出信号。第二放大器晶体管设置在具有耦合到浮动扩散的栅极端子的半导体材料中，以及耦合以产生像素单元的第二输出信号的源极端子。

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