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1. 发明申请

US20210305299A1 TRANSISTORS HAVING INCREASED EFFECTIVE CHANNEL WIDTH 有权
公开(公告)号：US20210305299A1
公开(公告)日：2021-09-30
申请号：US16830086
申请日：2020-03-25
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Chiao-Ti Huang , Sing-Chung Hu , Yuanwei Zheng
IPC分类号： H01L27/146
摘要： Image sensors include a photodiode disposed in a semiconductor substrate and a transistor operatively coupled to the photodiode. The transistor includes a nonplanar structure disposed in the semiconductor substrate, which is bounded by two outer trench structures formed in the semiconductor substrate. Isolation deposits are disposed within the two outer trench structures formed in the semiconductor substrate. A gate includes a planar gate and two fingers extending into one of two inner trench structures formed in the semiconductor substrate between the nonplanar structure and a respective one of the two outer trench structures. This structure creates an electron channel extending along a plurality of sidewall portions of the nonplanar structure in a channel width plane.

2. 发明授权

US10566364B2 Resonant-filter image sensor and associated fabrication method 有权
公开(公告)号：US10566364B2
公开(公告)日：2020-02-18
申请号：US16276561
申请日：2019-02-14
申请人： OmniVision Technologies, Inc.
发明人： Yuanwei Zheng , Gang Chen , Duli Mao , Dyson H. Tai , Lequn Liu
IPC分类号： H01L27/146
摘要： A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

3. 发明授权

US10418408B1 Curved image sensor using thermal plastic substrate material 有权
公开(公告)号：US10418408B1
公开(公告)日：2019-09-17
申请号：US16016057
申请日：2018-06-22
申请人： OmniVision Technologies, Inc.
发明人： Yuanwei Zheng , Chia-Chun Miao , Gang Chen , Yin Qian , Duli Mao , Dyson H. Tai , Lindsay Grant
IPC分类号： H01L27/146 , H04N5/378
摘要： An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material to receive light through a first surface of the semiconductor material. At least part of the semiconductor material is curved. A carrier wafer is attached to a second surface, opposite the first surface, of the semiconductor material, and a polymer layer is attached to the carrier wafer, so that the carrier wafer is disposed between the polymer layer and the semiconductor material.

4. 发明授权

US10290670B2 Resonant-filter image sensor and associated fabrication method 有权
公开(公告)号：US10290670B2
公开(公告)日：2019-05-14
申请号：US15195926
申请日：2016-06-28
申请人： OmniVision Technologies, Inc.
发明人： Yuanwei Zheng , Gang Chen , Duli Mao , Dyson H. Tai , Lequn Liu
IPC分类号： H01L27/146
摘要： A resonant-filter image sensor includes a pixel array including a plurality of pixels and a microresonator layer above the pixel array. The microresonator layer includes a plurality of microresonators formed of a first material with an extinction coefficient less than 0.02 at a free-space wavelength of five hundred nanometers. Each of the plurality of pixels may have at least one of the plurality of microresonators at least partially thereabove. The resonant-filter image sensor may further include a layer covering the microresonator layer that has a second refractive index less than a first refractive index, the first refractive index being the refractive index of the first material. Each microresonator may be one of a parallelepiped, a cylinder, a spheroid, and a sphere.

5. 发明授权

US09564470B1 Hard mask as contact etch stop layer in image sensors 有权
标题翻译：硬掩模作为图像传感器中的接触蚀刻停止层
公开(公告)号：US09564470B1
公开(公告)日：2017-02-07
申请号：US15272164
申请日：2016-09-21
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Gang Chen , Yuanwei Zheng , Duli Mao , Dyson Tai
IPC分类号： H01L31/18 , H01L27/146
CPC分类号： H01L27/14689 , H01L27/14612 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L27/1464 , H01L27/14645 , H01L27/14685
摘要： A method of image sensor fabrication includes forming a layer of dielectric material, a layer of gate material, and a layer of hard mask material. The layer of dielectric material is disposed between the layer of gate material and a semiconductor material, and the layer of gate material is disposed between the layer of hard mask material and the layer of dielectric material. The method also includes etching the layer of hard mask material and layer of gate material, and etching forms a transfer gate from the layer of gate material. An encapsulation material is deposited proximate to a surface of the semiconductor material. Trenches are etched in the encapsulation material. A first trench extends through the encapsulation material and the layer of dielectric material, and a second trench extends through the encapsulation material and the layer of hard mask material.
摘要翻译：图像传感器制造的方法包括形成介电材料层，栅极材料层和硬掩模材料层。介电材料层设置在栅极材料层和半导体材料之间，并且栅极材料层设置在硬掩模材料层和电介质材料层之间。该方法还包括蚀刻硬掩模材料层和栅极材料层，并且蚀刻从栅极材料层形成传输栅极。封装材料沉积在半导体材料的表面附近。在封装材料中蚀刻沟槽。第一沟槽延伸穿过封装材料和介电材料层，并且第二沟槽延伸穿过封装材料和硬掩模材料层。

6. 发明申请

US20160227147A1 IMAGE SENSOR WITH ENHANCED QUANTUM EFFICIENCY 有权
标题翻译：具有增强量子效率的图像传感器
公开(公告)号：US20160227147A1
公开(公告)日：2016-08-04
申请号：US14612961
申请日：2015-02-03
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Gang Chen , Dominic Massetti , Chih-Wei Hsiung , Arvind Kumar , Yuanwei Zheng , Duli Mao , Dyson H. Tai
IPC分类号： H04N5/3745 , H04N5/378
CPC分类号： H04N9/045 , H01L27/14627 , H01L27/1464 , H01L27/14641 , H01L27/14647 , H04N5/37457
摘要： A back side illuminated image sensor includes a pixel array including semiconductor material, and image sensor circuitry disposed on a front side of the semiconductor material to control operation of the pixel array. A first pixel includes a first doped region disposed proximate to a back side of the semiconductor material and extends into the semiconductor material a first depth to reach the image sensor circuitry. A second pixel with a second doped region is disposed proximate to the back side of the semiconductor material and extends into the semiconductor material a second depth which is less than the first depth. A third doped region is disposed between the second doped region and the image sensor circuitry front side of the semiconductor material. The third doped region is electrically isolated from the first doped region and the second doped region.
摘要翻译：背面照明图像传感器包括包括半导体材料的像素阵列和设置在半导体材料的前侧上以控制像素阵列的操作的图像传感器电路。第一像素包括靠近半导体材料的背面设置的第一掺杂区域，并延伸到半导体材料中以到达图像传感器电路的第一深度。具有第二掺杂区域的第二像素设置在半导体材料的背面附近并且延伸到半导体材料中的比第一深度小的第二深度。第三掺杂区域设置在第二掺杂区域和半导体材料的图像传感器电路正面之间。第三掺杂区域与第一掺杂区域和第二掺杂区域电隔离。

7. 发明申请

US20160071892A1 DOPANT CONFIGURATION IN IMAGE SENSOR PIXELS 审中-公开
标题翻译：图像传感器像素中的DOPANT配置
公开(公告)号：US20160071892A1
公开(公告)日：2016-03-10
申请号：US14478931
申请日：2014-09-05
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Gang Chen , Philippe Matagne , Chih-Wei Hsiung , Yuanwei Zheng , Duli Mao , Dyson H. Tai
IPC分类号： H01L27/146 , H04N5/374 , H04N5/378
CPC分类号： H01L27/1461 , H01L27/14641 , H01L27/14643 , H01L27/14689
摘要： An image sensor pixel including a photodiode includes a first dopant region disposed within a semiconductor layer and a second dopant region disposed above the first dopant region and within the semiconductor layer. The second dopant region contacts the first dopant region and the second dopant region is of an opposite majority charge carrier type as the first dopant region. A third dopant region is disposed above the first dopant region and within the semiconductor layer. The third dopant region is of a same majority charge carrier type as the second dopant region but has a greater concentration of free charge carriers than the second dopant region. A transfer gate is positioned to transfer photogenerated charge from the photodiode. The second dopant region extends closer to an edge of the transfer gate than the third dopant region.
摘要翻译：包括光电二极管的图像传感器像素包括设置在半导体层内的第一掺杂区和设置在第一掺杂区之上和半导体层内的第二掺杂区。第二掺杂剂区域接触第一掺杂剂区域，并且第二掺杂剂区域具有与第一掺杂剂区域相反的多数电荷载流子类型。第三掺杂剂区域设置在第一掺杂剂区域之上和半导体层内。第三掺杂剂区域具有与第二掺杂剂区域相同的多数电荷载流子类型，但是具有比第二掺杂剂区域更大的自由电荷载流子浓度。转移门被定位成从光电二极管转移光生电荷。第二掺杂剂区域比第三掺杂剂区域更靠近传输栅极的边缘延伸。

8. 发明授权

US10964738B2 Image sensor having a source follower transistor with a multi-thickness gate dielectric 有权
公开(公告)号：US10964738B2
公开(公告)日：2021-03-30
申请号：US16149544
申请日：2018-10-02
申请人： OmniVision Technologies, Inc.
发明人： Gang Chen , Yuanwei Zheng , Qin Wang , Cunyu Yang , Guannan Chen , Duli Mao , Dyson Tai , Lindsay Grant , Eric Webster , Sing-Chung Hu
IPC分类号： H01L27/146 , H04N5/378 , H04N9/04
摘要： An image sensor includes one or more photodiodes disposed in a semiconductor material to receive image light and generate image charge, and a floating diffusion to receive the image charge from the one or more photodiodes. One or more transfer transistors is coupled to transfer image charge in the one or more photodiodes to the floating diffusion, and a source follower transistor is coupled to amplify the image charge in the floating diffusion. The source follower includes a gate electrode (coupled to the floating diffusion), source and drain electrodes, and an active region disposed in the semiconductor material between the source and drain electrodes. A dielectric material is disposed between the gate electrode and the active region and has a first thickness and a second thickness. The second thickness is greater than the first thickness, and the second thickness is disposed closer to the drain electrode than the first thickness.

9. 发明授权

US10734434B2 Vertical overflow drain combined with vertical transistor 有权
公开(公告)号：US10734434B2
公开(公告)日：2020-08-04
申请号：US15984136
申请日：2018-05-18
申请人： OmniVision Technologies, Inc.
发明人： Yuanwei Zheng , Gang Chen , Duli Mao , Dyson Tai , Lindsay Grant
IPC分类号： H01L27/146 , H04N5/359 , H04N5/378
摘要： An image sensor pixel includes a photodiode disposed in a semiconductor material to generate image charge in response to light incident on a backside of the semiconductor material, and a pinning layer disposed in the semiconducting material and coupled to the photodiode. The pixel also includes a vertical overflow drain disposed in the semiconductor material and coupled to the pinning layer such that the pinning layer is disposed between the vertical overflow drain and the photodiode. A floating diffusion disposed in the semiconductor material proximate to the photodiode, and a vertical transfer transistor is disposed in part in the semiconductor material and coupled to the photodiode to transfer the image charge from the photodiode to the floating diffusion in response to a transfer signal applied to the gate terminal of the vertical transfer transistor.

10. 发明授权

US09691810B1 Curved image sensor 有权
公开(公告)号：US09691810B1
公开(公告)日：2017-06-27
申请号：US14974362
申请日：2015-12-18
申请人： OMNIVISION TECHNOLOGIES, INC.
发明人： Yuanwei Zheng , Gang Chen , Duli Mao , Dyson Tai , Arvind Kumar , Hung Chih Chang , Chih-Wei Hsiung
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14645
摘要： An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material with pinning wells disposed between individual photodiodes in the plurality of photodiodes. The image sensor also includes a microlens layer. The microlens layer is disposed proximate to the semiconductor material and is optically aligned with the plurality of photodiodes. A spacer layer disposed between the semiconductor material and the microlens layer. The spacer layer has a concave cross-sectional profile across the array, and the microlens layer is conformal with the concave cross-sectional profile of the spacer layer.

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