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1. 发明申请

US20190286351A1 METHOD FOR CONFIGURING HOST MEMORY BUFFER, MEMORY STORAGE APPARATUS AND MEMORY CONTROL CIRCUIT UNIT 审中-公开
公开(公告)号：US20190286351A1
公开(公告)日：2019-09-19
申请号：US15978198
申请日：2018-05-14
申请人： PHISON ELECTRONICS CORP.
发明人： Hsiao-Chi Ho , Cheng-Nan Wu , Chien-Hua Chu
IPC分类号： G06F3/06 , G06F12/02
摘要： A method for configuring host memory buffer, a memory storage apparatus and a memory control circuit unit are provided. The method includes: loading an initial program stored in an option ROM of a memory storage apparatus to a buffer memory of a host system; executing the initial program to configure continuous physical addresses in the buffer memory as a host memory buffer of the memory storage apparatus and setting a signature at the continuous physical addresses and storing the signature. The method further includes: re-establishing a link with the continuous physical addresses when receiving a reset command corresponding to a suspend-to-RAM mode and determining whether a signature set at the continuous physical addresses is the same as the stored signature; and resuming to use the continuous physical addresses as the host memory buffer of the memory storage apparatus if the signature is the same as the stored signature.

2. 发明授权

US10191533B2 Method of enabling sleep mode, memory control circuit unit and storage apparatus 有权
公开(公告)号：US10191533B2
公开(公告)日：2019-01-29
申请号：US14698870
申请日：2015-04-29
申请人： PHISON ELECTRONICS CORP.
发明人： Chien-Hua Chu
IPC分类号： G06F1/32
摘要： A sleep mode enabling method for a memory storage apparatus is provided. The method includes: setting a sleep pin connecting flag as a first value if a potential signal on a device sleep signal pin is at a second logic level opposite to an initial first logic level; setting a device sleep function flag as the first value in response to a device sleep function enabling command received from a host system; and enabling a device sleep function of the memory storage apparatus if the device sleep function enabling command is received and the device sleep function flag is set as the first value.

3. 发明授权

US10067677B2 Memory management method for configuring super physical units of rewritable non-volatile memory modules, memory control circuit unit and memory storage device 有权
公开(公告)号：US10067677B2
公开(公告)日：2018-09-04
申请号：US15052891
申请日：2016-02-25
申请人： PHISON ELECTRONICS CORP.
发明人： Chien-Hua Chu
IPC分类号： G06F3/06
摘要： A memory management method, a memory control circuit unit and a memory storage device are provided. The method includes: configuring a plurality of first type super physical units, and each of the first type super physical units includes at least two good physical erasing units which may be programmed simultaneously. The method also includes: configuring at least one second type super physical unit, and the at least one second type super physical unit includes at least two good physical erasing units which may not be programmed simultaneously.

4. 发明申请

US20150234692A1 MEMORY MANAGEMENT METHOD, MEMORY CONTROL CIRCUIT UNIT AND MEMORY STORAGE APPARATUS 有权
标题翻译：存储器管理方法，存储器控制电路单元和存储器存储装置
公开(公告)号：US20150234692A1
公开(公告)日：2015-08-20
申请号：US14263979
申请日：2014-04-28
申请人： Phison Electronics Corp.
发明人： Chien-Hua Chu
IPC分类号： G06F11/07 , G06F11/10 , G06F11/20
CPC分类号： G11C29/70 , G06F11/073 , G06F11/076 , G06F11/1048 , G06F11/1068 , G06F11/1666 , G06F11/20 , G06F11/2038 , G06F11/2046 , G11C29/52 , G11C29/72 , G11C29/808 , G11C29/82 , G11C2029/0411
摘要： A memory management method, a memory control circuit unit using the method, and a memory storage apparatus using the method are provided. The memory management method includes determining whether a use count of the rewritable non-volatile memory module is greater than a use count threshold; based on a result of the determination, sorting each physical erasing unit in a spare area in an ascending manner according to an erasing count of each physical erasing unit in the spare area or according to the number of maximum bit errors of the physical erasing units in the spare area, so as to form a plurality of sorted physical erasing units; and selecting the foremost physical erasing unit from the spare area to write data according to the sorted physical erasing units. By applying the memory management method, the lifespan of the rewritable non-volatile memory module may be effectively prolonged.
摘要翻译：提供存储器管理方法，使用该方法的存储器控制电路单元和使用该方法的存储器存储装置。存储器管理方法包括确定可重写非易失性存储器模块的使用计数是否大于使用计数阈值; 基于确定的结果，根据备用区域中的每个物理擦除单元的擦除计数或根据物理擦除单元的最大位错误的数量，按照升序排列备用区中的每个物理擦除单元备用区域，以形成多个分类物理擦除单元; 并且从备用区域选择最前面的物理擦除单元，以根据排序的物理擦除单元写入数据。通过应用存储器管理方法，可以有效地延长可重写非易失性存储器模块的寿命。

5. 发明申请

US20130262755A1 DATA ACCESSING METHOD FOR FLASH MEMORY STORAGE DEVICE HAVING DATA PERTURBATION MODULE, AND STORAGE SYSTEM AND CONTROLLER USING THE SAME 有权
公开(公告)号：US20130262755A1
公开(公告)日：2013-10-03
申请号：US13902404
申请日：2013-05-24
申请人： PHISON ELECTRONICS CORP.
发明人： Chien-Hua Chu , Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F3/0605 , G06F3/0659 , G06F3/067 , G06F12/1408 , G06F21/79 , G06F2212/7201
摘要： A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

6. 发明授权

US09236148B2 Memory management method, memory control circuit unit and memory storage apparatus 有权
标题翻译：存储器管理方法，存储器控制电路单元和存储器存储装置
公开(公告)号：US09236148B2
公开(公告)日：2016-01-12
申请号：US14263979
申请日：2014-04-28
申请人： PHISON ELECTRONICS CORP.
发明人： Chien-Hua Chu
IPC分类号： G11C29/00 , G06F11/07 , G06F11/20 , G06F11/10 , G06F11/16
CPC分类号： G11C29/70 , G06F11/073 , G06F11/076 , G06F11/1048 , G06F11/1068 , G06F11/1666 , G06F11/20 , G06F11/2038 , G06F11/2046 , G11C29/52 , G11C29/72 , G11C29/808 , G11C29/82 , G11C2029/0411
摘要： A memory management method, a memory control circuit unit using the method, and a memory storage apparatus using the method are provided. The memory management method includes determining whether a use count of the rewritable non-volatile memory module is greater than a use count threshold; based on a result of the determination, sorting each physical erasing unit in a spare area in an ascending manner according to an erasing count of each physical erasing unit in the spare area or according to the number of maximum bit errors of the physical erasing units in the spare area, so as to form a plurality of sorted physical erasing units; and selecting the foremost physical erasing unit from the spare area to write data according to the sorted physical erasing units. By applying the memory management method, the lifespan of the rewritable non-volatile memory module may be effectively prolonged.
摘要翻译：提供存储器管理方法，使用该方法的存储器控制电路单元和使用该方法的存储器存储装置。存储器管理方法包括确定可重写非易失性存储器模块的使用计数是否大于使用计数阈值; 基于确定的结果，根据备用区域中的每个物理擦除单元的擦除计数或根据物理擦除单元的最大位错误的数量，按照升序排列备用区中的每个物理擦除单元备用区域，以形成多个分类物理擦除单元; 并且从备用区域选择最前面的物理擦除单元，以根据排序的物理擦除单元写入数据。通过应用存储器管理方法，可以有效地延长可重写非易失性存储器模块的寿命。

7. 发明申请

US20150268879A1 MEMORY MANAGEMENT METHOD, MEMORY STORAGE DEVICE AND MEMORY CONTROL CIRCUIT UNIT 审中-公开
标题翻译：存储器管理方法，存储器存储器件和存储器控制电路单元
公开(公告)号：US20150268879A1
公开(公告)日：2015-09-24
申请号：US14280673
申请日：2014-05-19
申请人： PHISON ELECTRONICS CORP.
发明人： Chien-Hua Chu
IPC分类号： G06F3/06
CPC分类号： G06F12/00 , G06F12/0246 , G06F2212/7205
摘要： A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: receiving a write command to write first data into a first spare physical erasing unit; selecting a first physical erasing unit, wherein the first physical erasing unit does not include the first spare physical erasing unit and stores a plurality of data in which at least two data belong to different logical erasing units; copying and writing a valid data among the plurality of data into a second spare physical erasing unit, wherein the second spare physical erasing unit is different from the first spare physical erasing unit.
摘要翻译：提供存储器管理方法，存储器存储装置和存储器控制电路单元。该方法包括：接收写入命令以将第一数据写入第一备用物理擦除单元; 选择第一物理擦除单元，其中所述第一物理擦除单元不包括所述第一备用物理擦除单元，并且存储其中至少两个数据属于不同逻辑擦除单元的多个数据; 在所述多个数据中复制和写入有效数据到第二备用物理擦除单元中，其中所述第二备用物理擦除单元与所述第一备用物理擦除单元不同。

8. 发明申请

US20140068162A1 DATA ACCESSING METHOD FOR FLASH MEMORY STORAGE DEVICE HAVING DATA PERTURBATION MODULE, AND STORAGE SYSTEM AND CONTROLLER USING THE SAME 审中-公开
标题翻译：具有数据刺激模块的闪存存储器件的数据存取方法，存储系统和使用该存储器的控制器
公开(公告)号：US20140068162A1
公开(公告)日：2014-03-06
申请号：US14072517
申请日：2013-11-05
申请人： PHISON ELECTRONICS CORP.
发明人： Chien-Hua Chu , Chih-Kang Yeh
IPC分类号： G06F12/02
CPC分类号： G06F12/0246 , G06F3/0605 , G06F3/0659 , G06F3/067 , G06F12/1408 , G06F21/79 , G06F2212/7201
摘要： A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.
摘要翻译：提供数据访问方法，以及存储系统和使用该方法的控制器。数据访问方法适用于具有数据扰动模块的闪存存储系统。数据访问方法包括从主机接收读取命令并从读取命令获得要读取的逻辑块和要读取的页面。数据存取方法还包括确定与要读取的逻辑块相对应的数据区中的物理块是否为新块，并且当与待读取的逻辑块相对应的物理块为新时，将该预定数据发送给主机块。由此，防止主机从具有数据扰动模块的闪速存储器存储系统读取乱码。

9. 发明授权

US09710193B2 Method of detecting memory modules, memory control circuit unit and storage apparatus 有权
公开(公告)号：US09710193B2
公开(公告)日：2017-07-18
申请号：US14140480
申请日：2013-12-25
申请人： PHISON ELECTRONICS CORP.
发明人： Chien-Hua Chu
IPC分类号： G06F3/06 , G06F11/30
CPC分类号： G06F3/0659 , G06F3/0614 , G06F3/0632 , G06F3/0679 , G06F11/3037 , G06F11/3055 , G06F11/3089
摘要： A method of detecting a rewritable non-volatile memory module is provided. The method includes setting an output voltage of a write protect pin of a memory interface as a first logic level, giving a read status command and receiving a first status message. The method further includes determining whether a corresponding bit data in the first status message conforms to a status corresponding to the first logic level; and if yes, identifying that the rewritable non-volatile memory module has connected to the memory interface.

10. 发明授权

US09324435B2 Data transmitting method, memory control circuit unit and memory storage apparatus 有权
标题翻译：数据发送方法，存储器控制电路单元和存储器存储装置
公开(公告)号：US09324435B2
公开(公告)日：2016-04-26
申请号：US14258037
申请日：2014-04-22
申请人： PHISON ELECTRONICS CORP.
发明人： Chien-Hua Chu
IPC分类号： G11C16/10 , G11C7/04 , G11C16/26
CPC分类号： G11C16/10 , G11C7/04 , G11C16/26
摘要： A data transmitting method for a memory storage apparatus is provided. The method includes: initially setting a first threshold and a first accumulated value; and updating the first threshold by using the first threshold plus the first accumulated value at intervals of a first predetermined time. The method also includes when a detected temperature of the memory storage apparatus is greater than or equal to a temperature threshold, determining whether a size of received writing data is greater than or equal to the first threshold; and if no, writing the writing data into a rewritable non-volatile memory module and then updating the first threshold by using the first threshold minus the size of the writing data; and if yes, not writing the writing data into the rewritable non-volatile memory module. Accordingly, the method can effectively prevent overheat of system during operations of the memory storage apparatus.
摘要翻译：提供了一种用于存储器存储装置的数据发送方法。该方法包括：初始设置第一阈值和第一累积值; 以及以第一预定时间的间隔通过使用所述第一阈值加上所述第一累积值来更新所述第一阈值。该方法还包括当存储器存储装置的检测温度大于或等于温度阈值时，确定接收到的写入数据的大小是否大于或等于第一阈值; 如果不是，则将写入数据写入可重写的非易失性存储器模块中，然后通过使用第一阈值减去写入数据的大小来更新第一阈值; 如果是，则不将写入数据写入可重写的非易失性存储器模块。因此，该方法可以有效地防止在存储器存储装置的操作期间系统的过热。

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