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1. 发明申请

US20090315119A1 CMOS CIRCUITS SUITABLE FOR LOW NOISE RF APPLICATIONS 有权
标题翻译： CMOS电路适用于低噪声RF应用
公开(公告)号：US20090315119A1
公开(公告)日：2009-12-24
申请号：US12306935
申请日：2007-06-27
申请人： Paul Ronald Stribley , John Nigel Ellis
发明人： Paul Ronald Stribley , John Nigel Ellis
IPC分类号： H01L27/092
CPC分类号： H01L27/092 , H01L27/0928
摘要： A CMOS circuit comprises CMOS MOSFETs having n-type and p-type gates on the same substrate, wherein the substrate is divided into regions of n-type and p-type diffusions, and those diffusions are contained within a deeper n-type diffusion, used to junction isolate components within the deeper n-type diffusion from components outside of the deeper n-type diffusion.
摘要翻译： CMOS电路包括在同一衬底上具有n型和p型栅极的CMOS MOSFET，其中衬底被分为n型和p型扩散区域，并且这些扩散包含在更深的n型扩散中，用于将更深的n型扩散的深部n型扩散中的组分隔离成较深的n型扩散。

2. 发明申请

US20090315080A1 TRANSISTOR ARRAY WITH SHARED BODY CONTACT AND METHOD OF MANUFACTURING 有权
标题翻译：具有共享身体接触的晶体管阵列和制造方法
公开(公告)号：US20090315080A1
公开(公告)日：2009-12-24
申请号：US12306947
申请日：2007-06-29
申请人： Paul Ronald Stribley , John Nigel Ellis
发明人： Paul Ronald Stribley , John Nigel Ellis
IPC分类号： H01L27/092 , H01L27/088 , H01L29/78
CPC分类号： H01L27/0203 , H01L21/823425 , H01L27/0705 , H01L27/0921 , H01L29/4238 , H01L29/78
摘要： An array of transistors arranged next to each other on a semiconductor material forming a substrate, the substrate comprising p-well or n-well diffusions forming a body, which diffusions are used as the body regions of the transistors, each transistor comprising a source, a drain and a gate, wherein the array of transistors further comprises at least one electrical connection to the body, wherein said electrical connection is shared by at least two transistors of said array. Also disclosed is a semiconductor device comprising at least one source, at least one drain, at least one gate between the at least one source and the at least one drain, and at least one structure of the same material as the at least one gate which does not have a connection means for electrical connection to the at least one gate.
摘要翻译：在形成衬底的半导体材料上彼此相邻布置的晶体管阵列，所述衬底包括形成体的p阱或n阱扩散，所述扩散用作晶体管的体区，每个晶体管包括源极，漏极和栅极，其中所述晶体管阵列还包括与所述主体的至少一个电连接，其中所述电连接由所述阵列的至少两个晶体管共享。还公开了一种半导体器件，其包括至少一个源极，至少一个漏极，至少一个源极与至少一个漏极之间的至少一个栅极，以及与该至少一个栅极相同的材料的至少一个结构，没有用于与至少一个门的电连接的连接装置。

3. 发明授权

US09947662B2 CMOS circuits suitable for low noise RF applications 有权
公开(公告)号：US09947662B2
公开(公告)日：2018-04-17
申请号：US12306935
申请日：2007-06-27
申请人： Paul Ronald Stribley , John Nigel Ellis
发明人： Paul Ronald Stribley , John Nigel Ellis
IPC分类号： H01L21/02 , H01L27/092
CPC分类号： H01L27/092 , H01L27/0928
摘要： A CMOS circuit comprises CMOS MOSFETs having n-type and p-type gates on the same substrate, wherein the substrate is divided into regions of n-type and p-type diffusions, and those diffusions are contained within a deeper n-type diffusion, used to junction isolate components within the deeper n-type diffusion from components outside of the deeper n-type diffusion.

4. 发明申请

US20100059851A1 CMOS CIRCUITS COMBINING HIGH VOLTAGE AND RF TECHNOLOGIES 审中-公开
标题翻译： CMOS电路组合高压和射频技术
公开(公告)号：US20100059851A1
公开(公告)日：2010-03-11
申请号：US12306952
申请日：2007-06-27
申请人： John Nigel Ellis , Paul Ronald Stribley , Jun Fu
发明人： John Nigel Ellis , Paul Ronald Stribley , Jun Fu
IPC分类号： H01L27/08
CPC分类号： H01L27/0629 , H01L21/823857 , H01L21/823878 , H01L21/823892 , H01L27/0922 , H01L29/7835
摘要： A CMOS circuit comprises at least one high voltage transistor (having gate and drain operating voltages of greater than 8V) and at least one high frequency capable transistor (having a maximum switching frequency of between 100 MHz and 1000 GHz) wherein said transistors are integrated on the same semiconductor substrate so as to allow the simple integration of high voltage circuits and RF (radio frequency) CMOS circuits on the same integrated circuit.
摘要翻译： CMOS电路包括至少一个高压晶体管（具有大于8V的栅极和漏极工作电压）和至少一个高频能力的晶体管（具有在100MHz和1000GHz之间的最大开关频率），其中所述晶体管集成在相同的半导体衬底，以便在同一集成电路上简单地集成高压电路和RF（射频）CMOS电路。

5. 发明授权

US08455955B2 Transistor array with shared body contact and method of manufacturing 有权
标题翻译：具有共享身体接触的晶体管阵列和制造方法
公开(公告)号：US08455955B2
公开(公告)日：2013-06-04
申请号：US12306947
申请日：2007-06-29
申请人： Paul Ronald Stribley , John Nigel Ellis
发明人： Paul Ronald Stribley , John Nigel Ellis
IPC分类号： H01L21/70
CPC分类号： H01L27/0203 , H01L21/823425 , H01L27/0705 , H01L27/0921 , H01L29/4238 , H01L29/78
摘要： An array of transistors arranged next to each other on a semiconductor material forming a substrate, the substrate comprising p-well or n-well diffusions forming a body, which diffusions are used as the body regions of the transistors, each transistor comprising a source, a drain and a gate, wherein the array of transistors further comprises at least one electrical connection to the body, wherein said electrical connection is shared by at least two transistors of said array. Also disclosed is a semiconductor device comprising at least one source, at least one drain, at least one gate between the at least one source and the at least one drain, and at least one structure of the same material as the at least one gate which does not have a connection means for electrical connection to the at least one gate.
摘要翻译：在形成衬底的半导体材料上彼此相邻布置的晶体管阵列，所述衬底包括形成体的p阱或n阱扩散，所述扩散用作晶体管的体区，每个晶体管包括源极，漏极和栅极，其中所述晶体管阵列还包括与所述主体的至少一个电连接，其中所述电连接由所述阵列的至少两个晶体管共享。还公开了一种半导体器件，其包括至少一个源极，至少一个漏极，至少一个源极与至少一个漏极之间的至少一个栅极，以及与该至少一个栅极相同的材料的至少一个结构，没有用于与至少一个门的电连接的连接装置。

6. 发明授权

US06925224B2 Polysilicon optical router having rotor 失效
标题翻译：具有转子的多晶硅光路由器
公开(公告)号：US06925224B2
公开(公告)日：2005-08-02
申请号：US10079680
申请日：2002-02-20
申请人： John Nigel Ellis
发明人： John Nigel Ellis
IPC分类号： B81B3/00 , G02B6/35 , G02B6/26 , H02K7/06
CPC分类号： G02B6/3506 , G02B6/3546 , G02B6/357 , G02B6/3584 , G02B6/3596 , G02B6/3598
摘要： An optical router comprises a substantially planar substrate, a stator fixed to and projecting from an upper surface of the substrate, and a rotor surrounding the stator so as to be rotatable about the stator. At least one optical guiding component is formed in or on the rotor. A substantially planar layer is provided on the substrate surrounding the rotor and has a plurality of optical waveguides formed therein, the waveguides opening at least one end onto a space surrounding the rotor. The stator rotor, and planar layer are formed on the substrate by a series of deposition and etching steps such that the rotor may be rotated about the stator so as to align the optical guiding component with one or more of the waveguide openings.
摘要翻译：光路由器包括基本上平面的基板，固定到基板的上表面并从该基板的上表面突出的定子，以及围绕定子的转子，以便绕定子旋转。至少一个导光部件形成在转子中或转子上。在包围转子的基板上提供基本平坦的层，并且在其中形成有多个光波导，波导将至少一端打开到围绕转子的空间上。定子转子和平面层通过一系列沉积和蚀刻步骤在基板上形成，使得转子可围绕定子旋转，以使光导部件与一个或多个波导开口对准。

7. 发明申请

US20090250724A1 BIPOLAR TRANSISTOR AND METHOD OF MAKING SUCH A TRANSISTOR 审中-公开
标题翻译：双极晶体管和制造这种晶体管的方法
公开(公告)号：US20090250724A1
公开(公告)日：2009-10-08
申请号：US11721717
申请日：2005-12-14
申请人： John Nigel Ellis
发明人： John Nigel Ellis
IPC分类号： H01L29/73 , H01L21/331
CPC分类号： H01L29/7378
摘要： A bipolar transistor is formed on a heavily doped silicon substrate (1). An epitaxially grown collector (12) is formed on the substrate (1) and comprises silicon containing germanium at least at the top of the collector (12). An epitaxial base (13) is formed on the collector (12) to have the opposite polarity and also comprises silicon containing germanium at least at the bottom of the base (13). An emitter is formed at the top of the base (13) and comprises polysilicon doped to have the same polarity as the collector (12).
摘要翻译：在重掺杂硅衬底（1）上形成双极晶体管。在衬底（1）上形成外延生长的收集器（12），并且至少在收集器（12）的顶部包括含硅的锗。在集电器（12）上形成具有相反极性的外延基极（13），并且至少在基底（13）的底部还包含含硅的锗。发射极形成在基极（13）的顶部并且包括被掺杂以具有与集电极（12）相同极性的多晶硅。

8. 发明授权

US08120121B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08120121B2
公开(公告)日：2012-02-21
申请号：US12441165
申请日：2007-09-13
申请人： John Nigel Ellis , Piet De Pauw
发明人： John Nigel Ellis , Piet De Pauw
IPC分类号： H01L27/088 , H01L31/102 , H01L21/70
CPC分类号： H01L27/0629 , H01L31/02019 , H01L31/105
摘要： A semiconductor device including a first transistor in a substrate, a second transistor in the substrate, and a further device in the substrate. The second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage. The first voltage is the (normal) voltage of operation of the first transistor, and the first transistor is isolated from the second voltage.
摘要翻译：一种半导体器件，包括衬底中的第一晶体管，衬底中的第二晶体管，以及衬底中的另一器件。第二晶体管和另一个器件被布置成在高于第一电压的第二电压下操作。第一电压是第一晶体管的（正常）工作电压，第一晶体管与第二电压隔离。

9. 发明申请

US20100019343A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100019343A1
公开(公告)日：2010-01-28
申请号：US12441165
申请日：2007-09-13
申请人： John Nigel Ellis , Piet De Pauw
发明人： John Nigel Ellis , Piet De Pauw
IPC分类号： H01L27/06
CPC分类号： H01L27/0629 , H01L31/02019 , H01L31/105
摘要： A semiconductor device comprises: a first transistor in a substrate; a second transistor in said substrate; and a further device in said substrate, wherein the second transistor and the further device are arranged to operate at a second voltage which is higher than a first voltage, wherein the first voltage is the (normal) voltage of operation of the first transistor, and wherein the first transistor is isolated from the second voltage.
摘要翻译：半导体器件包括：衬底中的第一晶体管; 所述衬底中的第二晶体管; 以及在所述衬底中的另一器件，其中所述第二晶体管和所述另一器件被布置成在高于第一电压的第二电压下操作，其中所述第一电压是所述第一晶体管的（正常）工作电压，以及其中所述第一晶体管与所述第二电压隔离。

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