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1. 发明授权

US11444595B2 Acoustic resonator device with controlled placement of functionalization material 有权
公开(公告)号：US11444595B2
公开(公告)日：2022-09-13
申请号：US15334459
申请日：2016-10-26
申请人： Qorvo Biotechnologies, LLC
发明人： Matthew Ryder , Rio Rivas , Thayne Edwards
IPC分类号： H03B5/30 , H03H9/02 , G01N29/02 , G01N29/036 , G01N33/536 , H03H3/02 , H03H9/13 , H03H9/17 , H03H9/15
摘要： A micro-electrical-mechanical system (MEMS) resonator device includes at least one functionalization material arranged over at least a central portion, but less than an entirety, of a top side electrode. For an active region exhibiting greatest sensitivity at a center point and reduced sensitivity along its periphery, omitting functionalization material over at least one peripheral portion of a resonator active region prevents analyte binding in regions of lowest sensitivity. The at least one functionalization material extends a maximum length in a range of from about 20% to about 95% of an active area length and extends a maximum width in a range of from about 50% to 100% of an active area width. Methods for fabricating MEMS resonator devices are also provided.

2. 发明授权

US11486859B2 Fluidic device with fluid port orthogonal to functionalized active region 有权
公开(公告)号：US11486859B2
公开(公告)日：2022-11-01
申请号：US16741061
申请日：2020-01-13
申请人： Qorvo Biotechnologies, LLC
发明人： Gernot Fattinger , Rio Rivas
IPC分类号： G01N29/02 , G01N29/032 , G01N33/543 , G01N29/036 , G01N29/24 , G01N29/024 , G01N29/22 , H03H9/17
摘要： A fluidic device includes at least one bulk acoustic wave (BAW) resonator structure with a functionalized active region, and at least one first (inlet) port defined through a cover structure arranged over a fluidic passage containing the active region. At least a portion of the at least one inlet port is registered with the active region, permitting fluid to be introduced in a direction orthogonal to a surface of the active region bearing functionalization material. Such arrangement promotes mixing proximate to a BAW resonator structure surface, thereby reducing analyte stratification, increasing analyte binding rate, and reducing measurement time.

3. 发明申请

US20220385262A1 ACOUSTIC RESONATOR DEVICE WITH CONTROLLED PLACEMENT OF FUNCTIONALIZATION MATERIAL 有权
公开(公告)号：US20220385262A1
公开(公告)日：2022-12-01
申请号：US17884888
申请日：2022-08-10
申请人： Qorvo Biotechnologies, LLC
发明人： Matthew Ryder , Rio Rivas , Thayne Edwards
IPC分类号： H03H9/02 , G01N29/02 , G01N29/036 , G01N33/536 , H03H3/02 , H03H9/13 , H03H9/17
摘要： A micro-electrical-mechanical system (MEMS) resonator device includes at least one functionalization material arranged over at least a central portion, but less than an entirety, of a top side electrode. For an active region exhibiting greatest sensitivity at a center point and reduced sensitivity along its periphery, omitting functionalization material over at least one peripheral portion of a resonator active region prevents analyte binding in regions of lowest sensitivity. The at least one functionalization material extends a maximum length in a range of from about 20% to about 95% of an active area length and extends a maximum width in a range of from about 50% to 100% of an active area width. Methods for fabricating MEMS resonator devices are also provided.

4. 发明申请

US20220274104A1 ACOUSTIC RESONATOR DEVICE 有权
公开(公告)号：US20220274104A1
公开(公告)日：2022-09-01
申请号：US17749002
申请日：2022-05-19
申请人： Qorvo Biotechnologies, LLC
发明人： Rio Rivas , Kevin McCarron , Matthew Wasilik , David Doerr
IPC分类号： B01L3/00 , G01N29/02 , G01N29/24
摘要： Methods of fabricating a bulk acoustic wave resonator structure for a fluidic device. The methods can include a first step of disposing a first conductive material over a portion of a first surface of a substrate to form at least a portion of a first electrode, the substrate having a second surface opposite the first surface. Then, a piezoelectric material may be disposed over the first electrode. Next, a second conductive material can be disposed over the piezoelectric material to form at least a portion of a second electrode. The second conductive material extends substantially parallel to the first surface of the substrate and the second conductive material at least partially extends over the first conductive material. The overlapping region of the first conductive material, the piezoelectric material, and the second conductive material form a bulk acoustic wave resonator, the bulk acoustic wave resonator having a first side and an opposing second side. An acoustic energy management structure is then disposed over a first side of the bulk acoustic wave resonator. Next a third conductive material is disposed over a portion of the second conductive material that extends beyond the bulk acoustic wave resonator, wherein the third conductive material forms an interconnect extending above the acoustic energy management structure in a direction substantially perpendicular to the first surface of the substrate. Finally a portion of the second surface of the substrate is removed to expose a chemical mechanical connection at the first electrode at a second side of the bulk wave acoustic resonator. Devices formed thereby are also included.

5. 发明申请

US20230036296A1 Fluidic Device With Fluid Port Orthogonal to Functionalized Active Region 有权
公开(公告)号：US20230036296A1
公开(公告)日：2023-02-02
申请号：US17961953
申请日：2022-10-07
申请人： Qorvo Biotechnologies, LLC
发明人： Gernot Fattinger , Rio Rivas
IPC分类号： G01N29/02 , G01N29/22 , G01N29/024 , G01N29/24 , G01N29/036 , G01N33/543 , G01N29/032
摘要： A fluidic device includes at least one bulk acoustic wave (BAW) resonator structure with a functionalized active region, and at least one first (inlet) port defined through a cover structure arranged over a fluidic passage containing the active region. At least a portion of the at least one inlet port is registered with the active region, permitting fluid to be introduced in a direction orthogonal to a surface of the active region bearing functionalization material. Such arrangement promotes mixing proximate to a BAW resonator structure surface, thereby reducing analyte stratification, increasing analyte binding rate, and reducing measurement time.

6. 发明授权

US11369960B2 Acoustic resonator device 有权
公开(公告)号：US11369960B2
公开(公告)日：2022-06-28
申请号：US16868092
申请日：2020-05-06
申请人： QORVO BIOTECHNOLOGIES, LLC
发明人： Rio Rivas , Kevin McCarron , Matthew Wasilik , David Doerr
IPC分类号： B01L3/00 , G01N35/00 , G01N15/06 , G01N33/00 , G01N33/48 , G01N29/02 , G01N29/24
摘要： Methods of fabricating a bulk acoustic wave resonator structure for a fluidic device. The methods can include a first step of disposing a first conductive material over a portion of a first surface of a substrate to form at least a portion of a first electrode, the substrate having a second surface opposite the first surface. Then, a piezoelectric material may be disposed over the first electrode. Next, a second conductive material can be disposed over the piezoelectric material to form at least a portion of a second electrode. The second conductive material extends substantially parallel to the first surface of the substrate and the second conductive material at least partially extends over the first conductive material. The overlapping region of the first conductive material, the piezoelectric material, and the second conductive material form a bulk acoustic wave resonator, the bulk acoustic wave resonator having a first side and an opposing second side. An acoustic energy management structure is then disposed over a first side of the bulk acoustic wave resonator. Next a third conductive material is disposed over a portion of the second conductive material that extends beyond the bulk acoustic wave resonator, wherein the third conductive material forms an interconnect extending above the acoustic energy management structure in a direction substantially perpendicular to the first surface of the substrate. Finally a portion of the second surface of the substrate is removed to expose a chemical mechanical connection at the first electrode at a second side of the bulk wave acoustic resonator. Devices formed thereby are also included.

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