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1. 发明授权

US10056518B2 Active photonic device having a Darlington configuration 有权
公开(公告)号：US10056518B2
公开(公告)日：2018-08-21
申请号：US14746958
申请日：2015-06-23
申请人： RF Micro Devices, Inc.
发明人： Kevin Wesley Kobayashi , Ricke Waylan Clark
IPC分类号： H01L31/11 , H01L29/205 , H01L29/10 , H01L29/417 , H01L27/144 , H01L29/737 , H01L29/06 , H01L29/08 , H01L27/02 , H01L27/06 , H01L27/082
CPC分类号： H01L31/1105 , H01L27/0207 , H01L27/0605 , H01L27/0825 , H01L27/1443 , H01L29/0692 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/205 , H01L29/41708 , H01L29/7371
摘要： An active photonic device having a Darlington configuration is disclosed. The active photonic device includes a substrate with a collector layer over the substrate. The collector layer includes an inner collector region and an outer collector region that substantially surrounds the inner collector region. A base layer resides over the collector layer. The base layer includes an inner base region and an outer base region that substantially surrounds and is spaced apart from the inner base region. An emitter layer resides over the base layer. The emitter layer includes an inner emitter region that is ring-shaped and resides over and extends substantially around an outer periphery of the inner base region. The emitter layer further includes an outer emitter region that is ring-shaped and resides over and extends substantially around the outer base region. A connector structure electrically couples the inner emitter region with the outer base region.

2. 发明授权

US09391564B2 Doherty power amplifier with tunable impedance load 有权
公开(公告)号：US09391564B2
公开(公告)日：2016-07-12
申请号：US14103089
申请日：2013-12-11
申请人： RF Micro Devices, Inc.
发明人： Hamhee Jeon , Kevin Wesley Kobayashi
IPC分类号： H03F1/07 , H03F1/02 , H03F3/195
摘要： Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and control circuits along with methods of operating the same. In one embodiment, the Doherty amplification circuit includes a quadrature coupler having an isolation port and a tunable impedance load coupled to the isolation port and configured to provide a tunable impedance. The control circuit is configured to tune the tunable impedance of the tunable impedance load at the isolation port dynamically as a function of the RF power of the Doherty amplification circuit. In this manner, the control circuit can provide dynamic load modulation, thereby increasing the power efficiency of the Doherty amplification circuit, particularly at backed-off power levels. The load modulation provided by the control circuit also allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.

3. 发明授权

US09369095B2 Unbalanced linear power amplifier 有权
标题翻译：不平衡线性功率放大器
公开(公告)号：US09369095B2
公开(公告)日：2016-06-14
申请号：US14606375
申请日：2015-01-27
申请人： RF Micro Devices, Inc.
发明人： Kevin Wesley Kobayashi
IPC分类号： H03F3/68 , H01Q11/12 , H03F1/56 , H03F1/32 , H03F1/02 , H03F3/60
CPC分类号： H03F1/56 , H03F1/0261 , H03F1/32 , H03F1/565 , H03F3/602 , H03F2200/192 , H03F2200/198 , H03F2200/204 , H03F2201/3215
摘要： An unbalanced linear power amplifier (PA) is disclosed having a quadrature coupler with a 90° phase input port, a 0° phase input port, an output termination port, and a signal output port. Each of the 90° phase input port, the 0° phase input port, the output termination port, and the signal output port have a characteristic resistance (Ro). Also included is a first PA having an output coupled to a 90° phase input port of the quadrature coupler and a second PA having an output coupled to a 0° phase input port of the quadrature coupler. Biasing circuitry provides the first PA and the second PA with a similar gain. A tuning network is coupled between the output termination port and ground. The tuning network has an isolation resistance in series with an isolation inductance, wherein the isolation resistance is between about 0.02*Ro Ω and 0.8*Ro Ω.
摘要翻译：公开了一种具有90°相位输入端口，0°相位输入端口，输出端接端口和信号输出端口的正交耦合器的不平衡线性功率放大器（PA）。 90°相位输入端口，0°相位输入端口，输出端接端口和信号输出端口均具有特性电阻（Ro）。还包括具有耦合到正交耦合器的90°相位输入端口的输出的第一PA和具有耦合到正交耦合器的0°相位输入端口的输出的第二PA。偏置电路为第一个PA和第二个PA提供了类似的增益。调谐网络耦合在输出终端端口和地之间。调谐网络具有与隔离电感串联的隔离电阻，其中隔离电阻介于约0.02 * Ro＆OHgr之间; 和0.8 * Ro＆OHgr;

4. 发明授权

US10062684B2 Transition frequency multiplier semiconductor device 有权
公开(公告)号：US10062684B2
公开(公告)日：2018-08-28
申请号：US15014348
申请日：2016-02-03
申请人： RF Micro Devices, Inc.
发明人： Kevin Wesley Kobayashi
IPC分类号： H01L23/62 , H01L27/06 , H01L29/08 , H01L27/02 , H01L23/66 , H01L27/088
CPC分类号： H01L27/0629 , H01L23/66 , H01L27/0207 , H01L27/088 , H01L29/0847
摘要： A transition frequency multiplier semiconductor device having a first source region, a second source region, and a common drain region is disclosed. A first channel region is located between the first source region and the common drain region, and a second channel region is located between the second source region and the common drain region. A first gate region is located within the first channel region to control current flow between the first source region and the common drain region, while a second gate region is located within the second channel region to control current flow between the second source region and the common drain region. An inactive channel region is located between the first channel region and the second channel region such that the first channel region is electrically isolated from the second channel region. A conductive interconnect couples the first source region to the second gate region.

5. 发明授权

US09780733B2 Multi-broadband doherty power amplifier 有权
公开(公告)号：US09780733B2
公开(公告)日：2017-10-03
申请号：US15006905
申请日：2016-01-26
申请人： RF Micro Devices, Inc.
发明人： Hamhee Jeon , Kevin Wesley Kobayashi
IPC分类号： H03F3/68 , H03F1/02 , H03F1/42 , H03F3/60 , H03F1/56 , H03F3/19
CPC分类号： H03F1/0288 , H03F1/42 , H03F1/56 , H03F3/19 , H03F3/602 , H03F2200/36 , H03F2200/387 , H03F2200/451 , H03F2203/21139
摘要： Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and methods of operating the same. In one embodiment, a Doherty amplification circuit includes a main carrier RF amplifier, a peaking RF amplifier, and a periodic quadrature coupler. To provide Doherty amplification, the peaking RF amplifier is configured to be deactivated while an RF signal is below a threshold level and is configured to be activated while the RF signal is above the threshold level. The periodic quadrature coupler is configured to combine a first RF split signal from the main carrier RF amplifier and a second RF split signal from the peaking RF amplifier into the RF signal, such that the RF signal is output from an output port while the peaking RF amplifier is activated. The periodic quadrature coupler allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.

6. 发明申请

US20130277687A1 HIGH VOLTAGE FIELD EFFECT TRANSITOR FINGER TERMINATIONS 有权
公开(公告)号：US20130277687A1
公开(公告)日：2013-10-24
申请号：US13795926
申请日：2013-03-12
申请人： RF MICRO DEVICES, INC.
发明人： Kevin Wesley Kobayashi , Haldane S. Henry , Andrew P. Ritenour
IPC分类号： H01L29/423 , H01L29/812
CPC分类号： H01L29/402 , H01L29/1608 , H01L29/2003 , H01L29/41725 , H01L29/42316 , H01L29/66462 , H01L29/66477 , H01L29/7787 , H01L29/80 , H01L29/812
摘要： A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. Another embodiment includes at least one source field plate integral with the at least one source finger. The at least one source field plate extends over the at least one gate finger that includes a portion outside of the active region. Either embodiment can also include a sloped gate foot to further improve high voltage operation.

7. 发明申请

US20160225760A1 TRANSITION FREQUENCY MULTIPLIER SEMICONDUCTOR DEVICE 审中-公开
标题翻译：过渡频率乘法器半导体器件
公开(公告)号：US20160225760A1
公开(公告)日：2016-08-04
申请号：US15014348
申请日：2016-02-03
申请人： RF Micro Devices, Inc.
发明人： Kevin Wesley Kobayashi
IPC分类号： H01L27/06 , H01L49/02 , H01L27/02 , H01L23/66 , H01L23/535 , H01L29/08
CPC分类号： H01L27/0629 , H01L23/66 , H01L27/0207 , H01L27/088 , H01L29/0847
摘要： A transition frequency multiplier semiconductor device having a first source region, a second source region, and a common drain region is disclosed. A first channel region is located between the first source region and the common drain region, and a second channel region is located between the second source region and the common drain region. A first gate region is located within the first channel region to control current flow between the first source region and the common drain region, while a second gate region is located within the second channel region to control current flow between the second source region and the common drain region. An inactive channel region is located between the first channel region and the second channel region such that the first channel region is electrically isolated from the second channel region. A conductive interconnect couples the first source region to the second gate region.
摘要翻译：公开了具有第一源极区域，第二源极区域和公共漏极区域的过渡倍增器半导体器件。第一沟道区位于第一源区和公共漏区之间，第二沟道区位于第二源区和公共漏区之间。第一栅极区域位于第一沟道区域内以控制第一源极区域和公共漏极区域之间的电流，而第二栅极区域位于第二沟道区域内，以控制第二源极区域和公共漏极区域之间的电流漏区。无源沟道区位于第一沟道区和第二沟道区之间，使得第一沟道区与第二沟道区电隔离。导电互连将第一源极区域耦合到第二栅极区域。

8. 发明申请

US20160142023A1 MULTI-BROADBAND DOHERTY POWER AMPLIFIER 有权
标题翻译：多功能多功能放大器
公开(公告)号：US20160142023A1
公开(公告)日：2016-05-19
申请号：US15006905
申请日：2016-01-26
申请人： RF Micro Devices, Inc.
发明人： Hamhee Jeon , Kevin Wesley Kobayashi
IPC分类号： H03F1/02 , H03F1/56 , H03F3/19
CPC分类号： H03F1/0288 , H03F1/42 , H03F1/56 , H03F3/19 , H03F3/602 , H03F2200/36 , H03F2200/387 , H03F2200/451 , H03F2203/21139
摘要： Radio frequency (RF) amplification devices are disclosed that include Doherty amplification circuits and methods of operating the same. In one embodiment, a Doherty amplification circuit includes a main carrier RF amplifier, a peaking RF amplifier, and a periodic quadrature coupler. To provide Doherty amplification, the peaking RF amplifier is configured to be deactivated while an RF signal is below a threshold level and is configured to be activated while the RF signal is above the threshold level. The periodic quadrature coupler is configured to combine a first RF split signal from the main carrier RF amplifier and a second RF split signal from the peaking RF amplifier into the RF signal, such that the RF signal is output from an output port while the peaking RF amplifier is activated. The periodic quadrature coupler allows the Doherty amplification circuit to provide broadband amplification in various RF communication bands.
摘要翻译：公开了包括Doherty放大电路和其操作方法的射频（RF）放大器件。在一个实施例中，Doherty放大电路包括主载波RF放大器，峰化RF放大器和周期性正交耦合器。为了提供Doherty放大，峰值RF放大器被配置为在RF信号低于阈值电平时被去激活，并且被配置为在RF信号高于阈值电平时被激活。周期性正交耦合器被配置为将来自主载波RF放大器的第一RF分离信号和来自峰值RF放大器的第二RF分离信号组合成RF信号，使得RF信号从输出端口输出，而峰值RF 放大器被激活。周期性正交耦合器允许Doherty放大电路在各种RF通信频带中提供宽带放大。

9. 发明申请

US20160013766A1 LINEAR FET FEEDBACK AMPLIFIER 有权
标题翻译：线性场效应反馈放大器
公开(公告)号：US20160013766A1
公开(公告)日：2016-01-14
申请号：US14790096
申请日：2015-07-02
申请人： RF Micro Devices, Inc.
发明人： Kevin Wesley Kobayashi
IPC分类号： H03F3/193 , H04L5/14 , H03F1/34
CPC分类号： H03F3/193 , H03F1/342 , H03F3/245 , H03F3/3435 , H03F3/345 , H03F3/3455 , H03F2200/129 , H03F2200/18 , H03F2200/333 , H03F2200/451 , H03F2200/63 , H03F2200/93 , H04L5/1461
摘要： A circuit that includes a Darlington transistor pair having an input transistor and an output transistor configured to generate an output signal at an output node in response to an input signal received through an input node is disclosed. The circuit has a feedback coupling network coupled between the output node and the input node for feeding back to the input node a portion of an amplified version of the input signal that passes through the input transistor. The circuit further includes a bias feedback network that includes a bias transistor and a resistive network that consists of only resistive elements such that no inductors and no capacitors are provided within the bias feedback network.
摘要翻译：公开了一种包括具有输入晶体管的达林顿晶体管对的电路和被配置为响应于通过输入节点接收的输入信号在输出节点处产生输出信号的输出晶体管。电路具有耦合在输出节点和输入节点之间的反馈耦合网络，用于向输入节点反馈通过输入晶体管的输入信号的放大版本的一部分。该电路还包括偏置反馈网络，其包括偏置晶体管和仅由电阻元件组成的电阻网络，使得在偏置反馈网络内不设置电感器和电容器。

10. 发明申请

US20150372181A1 ACTIVE PHOTONIC DEVICE HAVING A DARLINGTON CONFIGURATION 审中-公开
标题翻译：具有DARLINGTON配置的主动光电器件
公开(公告)号：US20150372181A1
公开(公告)日：2015-12-24
申请号：US14746958
申请日：2015-06-23
申请人： RF Micro Devices, Inc.
发明人： Kevin Wesley Kobayashi , Ricke Waylan Clark
IPC分类号： H01L31/11 , H01L31/0304 , H01L31/0224 , H01L27/144 , H01L29/08 , H01L29/10 , H01L29/417 , H01L31/18 , H01L29/205
CPC分类号： H01L31/1105 , H01L27/0207 , H01L27/0605 , H01L27/0825 , H01L27/1443 , H01L29/0692 , H01L29/0817 , H01L29/0821 , H01L29/1004 , H01L29/205 , H01L29/41708 , H01L29/7371
摘要： An active photonic device having a Darlington configuration is disclosed. The active photonic device includes a substrate with a collector layer over the substrate. The collector layer includes an inner collector region and an outer collector region that substantially surrounds the inner collector region. A base layer resides over the collector layer. The base layer includes an inner base region and an outer base region that substantially surrounds and is spaced apart from the inner base region. An emitter layer resides over the base layer. The emitter layer includes an inner emitter region that is ring-shaped and resides over and extends substantially around an outer periphery of the inner base region. The emitter layer further includes an outer emitter region that is ring-shaped and resides over and extends substantially around the outer base region. A connector structure electrically couples the inner emitter region with the outer base region.
摘要翻译：公开了具有达林顿配置的有源光子器件。有源光子器件包括在衬底上具有集电极层的衬底。集电体层包括基本上围绕内部集电极区域的内部集电极区域和外部集电极区域。基层位于集电极层之上。基层包括内基区域和基本上围绕并与内基区间隔开的外基区域。发射极层位于基极层上。发射极层包括环形的内部发射极区域，并且基本上围绕内部基极区域的外周延伸并延伸。发射极层还包括环形的外部发射极区域，并且基本上围绕外部基极区域延伸并延伸。连接器结构将内部发射极区域与外部基极区域电耦合。

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