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1. 发明授权

US10580852B2 Semiconductor device 有权
公开(公告)号：US10580852B2
公开(公告)日：2020-03-03
申请号：US16400734
申请日：2019-05-01
申请人： ROHM CO., LTD.
发明人： Yuki Nakano , Ryota Nakamura , Hiroyuki Sakairi
IPC分类号： H01L29/06 , H01L29/16 , H01L29/417 , H01L29/45 , H01L29/47 , H01L29/66 , H01L29/78 , H01L29/10 , H01L29/08 , H01L29/49 , H01L21/04
摘要： The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type layer formed on the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity-type layer formed on the semiconductor layer so as to contact the second conductivity-type layer; a first electrode electrically connected to the first conductivity-type layer; a second electrode embedded in the trench and electrically connected to the second conductivity-type layer; and a barrier-forming layer which is arranged between the second electrode and the side surface of the trench and which, between said barrier-forming layer and the second conductivity-type layer, forms a potential barrier higher than the potential barrier between the second conductivity-type layer and the second electrode.

2. 发明授权

US10320309B2 Switching device 有权
公开(公告)号：US10320309B2
公开(公告)日：2019-06-11
申请号：US15853101
申请日：2017-12-22
申请人： ROHM CO., LTD.
发明人： Yuki Nakano , Hiroyuki Sakairi
IPC分类号： H02M7/44 , H01L29/43 , H01L29/16 , H01L29/78 , H01L27/02 , H01L29/417 , H01L29/10 , H01L29/45 , H01L29/423
摘要： A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.

3. 发明授权

US09337257B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09337257B2
公开(公告)日：2016-05-10
申请号：US14398334
申请日：2013-05-10
申请人： ROHM CO., LTD.
发明人： Yuki Nakano , Hiroyuki Sakairi
IPC分类号： H01L29/00 , H01L29/06 , H01L29/20 , H01L29/16 , H01L29/417 , H01L29/78 , H01L29/04
CPC分类号： H01L29/0646 , H01L21/046 , H01L29/045 , H01L29/0619 , H01L29/1602 , H01L29/1608 , H01L29/2003 , H01L29/41741 , H01L29/41775 , H01L29/7811
摘要： [Problem] To provide a semiconductor device in which it is possible to lessen the local concentration of an electric field on a termination structure.[Solution] The semiconductor device (1) comprises: an n-type SiC substrate (2) having an active region (3); a p-type termination structure (4) formed along the outer periphery of the active region (3), and a source electrode (14) that is formed on the SiC substrate (2) with an interlayer film (12) therebetween, and that selectively penetrates the interlayer film (12) and is connected to the termination structure (4). The termination structure (4) forms a second side (42) that has a relatively high dielectric breakdown strength, and a first side (41) that has a relatively low dielectric breakdown strength compared to the second side (42). The shape of the second side (42) and the shape of the first side (41) are asymmetrical.
摘要翻译：本发明提供一种半导体器件，其中可以减小终端结构上电场的局部浓度。 [解决方案]半导体器件（1）包括：具有有源区（3）的n型SiC衬底（2）沿着有源区（3）的外周形成的p型端接结构（4）和在其上具有中间膜（12）的SiC衬底（2）上形成的源电极（14），并且选择性地穿透层间膜（12）并连接到终端结构（4）。终端结构（4）形成具有相对较高的介电击穿强度的第二侧（42）和与第二侧（42）相比具有相对较低介电击穿强度的第一侧面（41）。第二侧（42）的形状和第一侧（41）的形状是不对称的。

4. 发明申请

US20150214354A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20150214354A1
公开(公告)日：2015-07-30
申请号：US14422097
申请日：2013-08-13
申请人： ROHM CO., LTD.
发明人： Yuki Nakano , Ryota Nakamura , Hiroyuki Sakairi
IPC分类号： H01L29/78 , H01L29/423 , H01L29/08 , H01L29/16
CPC分类号： H01L29/7813 , H01L21/0475 , H01L21/3065 , H01L29/0869 , H01L29/1608 , H01L29/4236 , H01L29/42368 , H01L29/66068 , H01L29/66734 , H01L29/7827
摘要： This semiconductor device includes: a semiconductor layer having a structure in which a drain layer of a first conductivity type, a channel layer of a second conductivity type, and a source layer of a first conductivity type are layered in the stated order, the source layer being exposed on the outer surface of the semiconductor layer; a gate trench that passes through the source layer and through the channel layer from the outer surface of the semiconductor layer, the deepest section of the gate trench reaching the drain layer; a gate insulating film formed on the inside surface of the gate trench, the gate insulating film being formed correspondingly with respect to the outer surface of the semiconductor layer; and a gate electrode embedded inside the gate trench interposed by the gate insulating layer. A portion of the gate insulating film that abuts the outer surface of the semiconductor layer is thicker than a portion that abuts the channel layer at a side surface of the gate trench.
摘要翻译：该半导体器件包括：具有第一导电类型的漏极层，第二导电类型的沟道层和第一导电类型的源极层的结构的半导体层按照所述的顺序层叠，源极层暴露在半导体层的外表面上; 栅极沟槽，其穿过源极层并且从半导体层的外表面穿过沟道层，栅极沟槽的最深部分到达漏极层; 栅极绝缘膜，形成在所述栅极沟槽的内表面上，所述栅极绝缘膜相应于所述半导体层的外表面形成; 以及嵌入栅极沟槽内部的栅极电极，由栅极绝缘层插入。栅极绝缘膜的与半导体层的外表面邻接的部分比在栅极沟槽的侧表面处与沟道层邻接的部分更厚。

5. 发明授权

US11081433B2 Semiconductor device 有权
公开(公告)号：US11081433B2
公开(公告)日：2021-08-03
申请号：US16862968
申请日：2020-04-30
申请人： Rohm Co., Ltd.
发明人： Koshun Saito , Hiroyuki Sakairi , Yasufumi Matsuoka , Kenichi Yoshimochi
IPC分类号： H01L23/495 , H01L23/00
摘要： A semiconductor device provided with first and second semiconductor element each having an obverse and a reverse surface with a drain electrode, source electrode and gate electrode provided on the obverse surface. The semiconductor device is also provided with a control element electrically connected to the gate electrodes of the respective semiconductor elements, and with a plurality of leads, which include a first lead carrying the first semiconductor element, a second lead carrying the second semiconductor element, and a third lead carrying the control element. The first and second leads overlap with each other as viewed in a first direction perpendicular to the thickness direction of the semiconductor device, and the third lead overlaps with the first and second leads as viewed in a second direction perpendicular to the thickness direction and the first direction.

6. 发明授权

US11005387B2 Switching device 有权
公开(公告)号：US11005387B2
公开(公告)日：2021-05-11
申请号：US16811676
申请日：2020-03-06
申请人： ROHM CO., LTD.
发明人： Yuki Nakano , Hiroyuki Sakairi
IPC分类号： H02M7/44 , H01L29/43 , H01L29/16 , H01L29/78 , H01L27/02 , H01L29/417 , H01L29/10 , H01L29/45 , H01L29/423
摘要： A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.

7. 发明授权

US10908204B2 Method for measuring current-voltage characteristic 有权
公开(公告)号：US10908204B2
公开(公告)日：2021-02-02
申请号：US15473114
申请日：2017-03-29
申请人： ROHM CO., LTD.
发明人： Tatsuya Yanagi , Hirotaka Otake , Hiroyuki Sakairi , Naotaka Kuroda
IPC分类号： G01R31/26 , G06F30/367
摘要： A method for measuring a current-voltage characteristic (Id-Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id-Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.

8. 发明授权

US09117800B2 Switching device 有权
标题翻译：开关装置
公开(公告)号：US09117800B2
公开(公告)日：2015-08-25
申请号：US13917998
申请日：2013-06-14
申请人： ROHM CO., LTD.
发明人： Yuki Nakano , Hiroyuki Sakairi
IPC分类号： H01L29/43 , H01L29/16 , H01L29/78
CPC分类号： H02M7/44 , H01L27/0288 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/4236 , H01L29/42368 , H01L29/435 , H01L29/456 , H01L29/78 , H01L29/7803 , H01L29/7813
摘要： A switching device according to the present invention is a switching device for switching a load by on-off control of voltage, and includes an SiC semiconductor layer where a current path is formed by on-control of the voltage, a first electrode arranged to be in contact with the SiC semiconductor layer, and a second electrode arranged to be in contact with the SiC semiconductor layer for conducting with the first electrode due to the formation of the current path, while the first electrode has a variable resistance portion made of a material whose resistance value increases under a prescribed high-temperature condition for limiting current density of overcurrent to not more than a prescribed value when the overcurrent flows to the current path.
摘要翻译：根据本发明的开关装置是用于通过开关电压控制来切换负载的开关装置，并且包括通过对电压进行控制形成电流路径的SiC半导体层，布置成为与SiC半导体层接触的第二电极，以及由于形成电流路径而与SiC半导体层接触以与第一电极接触的第二电极，而第一电极具有由材料制成的可变电阻部分当过电流流过电流路径时，其电阻值在规定的高温条件下增加，用于将过电流的电流密度限制在规定值以下。

9. 发明授权

US10901024B2 Method for measuring current-voltage characteristic 有权
公开(公告)号：US10901024B2
公开(公告)日：2021-01-26
申请号：US15906233
申请日：2018-02-27
申请人： ROHM CO., LTD.
发明人： Tatsuya Yanagi , Hirotaka Otake , Hiroyuki Sakairi , Naotaka Kuroda
IPC分类号： G01R31/26 , G06F30/367
摘要： A method for measuring a current-voltage characteristic (Id−Vds characteristic) representing the relationship between the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage) of a transistor M1 includes setting the drain current Id (or collector current) and the drain-source voltage Vds (or collector-emitter voltage), measuring the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig of the transistor M1 in a switching transient state, and acquiring the current-voltage characteristic (Id−Vds characteristic) of the transistor M1 based on the measurement results of the gate-source voltage Vgs (or gate-emitter voltage) and the gate current Ig.

10. 发明授权

US09911844B2 Semiconductor device 有权
公开(公告)号：US09911844B2
公开(公告)日：2018-03-06
申请号：US15155885
申请日：2016-05-16
申请人： ROHM CO., LTD.
发明人： Yuki Nakano , Ryota Nakamura , Hiroyuki Sakairi
IPC分类号： H01L29/66 , H01L29/16 , H01L29/78 , H01L29/417 , H01L29/45 , H01L29/47 , H01L29/06 , H01L29/10 , H01L29/08
CPC分类号： H01L29/063 , H01L21/046 , H01L29/0649 , H01L29/0653 , H01L29/0696 , H01L29/0847 , H01L29/1095 , H01L29/1608 , H01L29/41766 , H01L29/45 , H01L29/47 , H01L29/4916 , H01L29/66068 , H01L29/7805 , H01L29/7806 , H01L29/7813
摘要： The semiconductor device includes: a semiconductor layer in which a trench is formed having a side surface and a bottom surface; a second conductivity-type layer formed on the semiconductor layer on the side surface and the bottom surface of the trench; a first conductivity-type layer formed on the semiconductor layer so as to contact the second conductivity-type layer; a first electrode electrically connected to the first conductivity-type layer; a second electrode embedded in the trench and electrically connected to the second conductivity-type layer; and a barrier-forming layer which is arranged between the second electrode and the side surface of the trench and which, between said barrier-forming layer and the second conductivity-type layer, forms a potential barrier higher than the potential barrier between the second conductivity-type layer and the second electrode.

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