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1. 发明授权

US10794866B2 Acoustic wave sensors and methods of sensing a gas-phase analyte 有权
公开(公告)号：US10794866B2
公开(公告)日：2020-10-06
申请号：US16242395
申请日：2019-01-08
申请人： Rohm and Haas Electronic Materials LLC , Rohm and Haas Electronic Materials Korea Ltd.
发明人： Christopher Gilmore , Aaron A. Rachford , Hee Jae Yoon , Jaclyn Murphy , Peter Trefonas, III , Deyan Wang
IPC分类号： G01N29/036 , G01N29/02 , C08F232/06 , C08F238/00 , C08L39/04 , C08L79/08 , G01N29/22 , G01N29/36 , H01L41/113
摘要： Acoustic wave sensors comprise: a piezoelectric layer, first and second electrodes arranged with the piezoelectric layer in a piezoelectric transducer circuit; and a polymeric sensing layer for adsorbing a gas-phase analyte, the adsorption of which analyte causes a change in resonant frequency of the piezoelectric transducer circuit, wherein the polymeric sensing layer comprises: (a) a polymer chosen from substituted or unsubstituted: polyarylenes comprising the reaction product of monomers comprising a first monomer comprising an aromatic acetylene group and a second monomer comprising a cyclopentadienone group; polyamides; polypyrazoles; or novolacs; or a cured product thereof; (b) a polymer chosen from substituted or unsubstituted: polyamic acids; or polyamic acid-polyimide copolymers; (c) a polymer formed from one or more monomers comprising a monomer comprising a polar group-substituted arylcyclobutene group, or a cured product thereof; or (d) a polymer comprising polymerized units of a monomer chosen from substituted or unsubstituted: maleimides; or norbomenes; or a cured product thereof. The acoustic wave sensors and methods of using such sensors find particular applicability in the sensing of gas-phase analytes.

2. 发明授权

US10558122B2 Compositions comprising sulfonamide material and processes for photolithography 有权
公开(公告)号：US10558122B2
公开(公告)日：2020-02-11
申请号：US14685290
申请日：2015-04-13
申请人： Rohm and Haas Electronic Materials, LLC
发明人： Deyan Wang , Chunyi Wu , George G. Barclay , Cheng-Bai Xu
IPC分类号： G03F7/20 , G03F7/04 , G03F7/039 , G03F7/004 , G03F7/038 , G03F7/075
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that have sulfonamide substitution. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.

3. 发明授权

US10042259B2 Topcoat compositions and pattern-forming methods 有权
公开(公告)号：US10042259B2
公开(公告)日：2018-08-07
申请号：US15730876
申请日：2017-10-12
申请人： Rohm and Haas Electronic Materials LLC
发明人： Irvinder Kaur , Cong Liu , Doris Kang , Mingqi Li , Deyan Wang , Huaxing Zhou
IPC分类号： G03F7/11 , C08F20/34 , C08F222/40 , C08L33/16 , C09D133/08 , C09D133/10 , C09D133/16 , G03F7/00 , G03F7/038 , G03F7/039 , G03F7/32 , H01L21/027
摘要： Topcoat compositions comprise: a matrix polymer; a surface active polymer comprising a polymerized unit formed from a monomer of the following general formula (I): wherein: R1 represents H, F, methyl or fluorinated methyl; R2 represents optionally substituted C1 to C8 alkylene or optionally substituted C1 to C8 fluoroalkylene, optionally comprising one or more heteroatom; R3 represents H, F, optionally substituted C1 to C10 alkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; R4 represents optionally substituted C1 to C8 alkyl, optionally substituted C1 to C8 fluoroalkyl or optionally substituted C5 to C15 aryl, optionally comprising one or more heteroatom; X represents O, S or NR5, wherein R5 is chosen from hydrogen and optionally substituted C1 to C5 alkyl; and a is 0 or 1; and a solvent. Also provided are coated substrates and pattern-forming methods which make use of the topcoat compositions. The invention has particular applicability in photolithographic processes as a photoresist topcoat layer in the manufacture of semiconductor devices.

4. 发明申请

US20170327712A1 NEUTRAL LAYER POLYMERS, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME 审中-公开
公开(公告)号：US20170327712A1
公开(公告)日：2017-11-16
申请号：US15190481
申请日：2016-06-23
申请人： Dow Global Technologies LLC , ROHM AND HAAS ELECTRONIC MATERIALS LLC
发明人： Peter Trefonas, III , Phillip D. Hustad , Deyan Wang , Rahul Sharma , Mingqi Li , Jieqian J. Zhang
IPC分类号： C09D153/00 , C08F293/00 , B81C1/00 , G03F7/00 , C08L83/10 , C08L53/00 , C08G77/442
CPC分类号： C09D153/00 , B81C1/00031 , B81C2201/0149 , C08F293/005 , C08F2438/03 , C08G77/442 , C08L53/00 , C08L83/10 , G03F7/0002 , C08L33/12
摘要： Disclosed herein is a block copolymer comprising a first segment and a second segment that are covalently bonded to each other and that are chemically different from each other; where the first segment has a first surface free energy and where the second segment has a second surface free energy; and an additive copolymer; where the additive copolymer comprises a surface free energy reducing moiety where the surface free energy reducing moiety has a lower surface free energy than that of the first segment and the second segment; the additive copolymer further comprising one or more moieties having an affinity to the block copolymer; where the surface free energy reducing moiety is chemically different from the first segment and from the second segment; where the additive copolymer is not water miscible; and where the additive copolymer is not covalently bonded with the block copolymer.

5. 发明授权

US09063425B2 Topcoat compositions and photolithographic methods 有权
标题翻译：面漆组合物和光刻方法
公开(公告)号：US09063425B2
公开(公告)日：2015-06-23
申请号：US13671528
申请日：2012-11-07
申请人： Rohm and Haas Electronic Materials LLC
发明人： Deyan Wang
IPC分类号： G03F7/00 , G03F7/11 , C09D141/00 , G03F7/20 , C09D133/16
CPC分类号： G03F7/11 , C09D133/16 , C09D141/00 , G03F7/2041 , C08L33/16 , C08L2205/025
摘要： Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a polymer system that includes a matrix polymer and a surface active polymer. The matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. A solvent system includes a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second organic solvent. The first organic solvent has a higher surface energy than a surface energy of the surface active polymer, and a higher boiling point than a boiling point of the second organic solvent.
摘要翻译：提供面漆组合物，其可用于浸没式光刻以形成光致抗蚀剂图案。面漆组合物包括包含基质聚合物和表面活性聚合物的聚合物体系。基质聚合物以比表面活性聚合物重量更大的比例存在于组合物中，并且表面活性聚合物具有比基质聚合物的表面能更低的表面能。溶剂系统包括选自γ-丁内酯和/或γ-戊内酯的第一有机溶剂和第二有机溶剂。第一有机溶剂具有比表面活性聚合物的表面能更高的表面能，并且沸点高于第二有机溶剂的沸点。

6. 发明申请

US20140322648A1 COMPOSITIONS AND PROCESSES FOR IMMERSION LITHOGRAPHY 审中-公开
标题翻译：组合物和浸没法的方法
公开(公告)号：US20140322648A1
公开(公告)日：2014-10-30
申请号：US14270271
申请日：2014-05-05
申请人： Rohm and Haas Electronic Materials LLC
发明人： Deyan Wang
IPC分类号： G03F7/20
CPC分类号： G03F7/0392 , G03F7/0046 , G03F7/0047 , G03F7/0382 , G03F7/0757 , G03F7/0758 , G03F7/2041
摘要： New photoresist compositions are provided that are useful for immersion lithography. Preferred photoresist compositions of the invention comprise one or more materials that can be substantially non-mixable with a resin component of the resist. Further preferred photoresist compositions of the invention comprise 1) Si substitution, 2) fluorine substitution; 3) hyperbranched polymers; and/or 4) polymeric particles. Particularly preferred photoresists of the invention can exhibit reduced leaching of resist materials into an immersion fluid contacting the resist layer during immersion lithography processing.
摘要翻译：提供了可用于浸没式光刻的新的光致抗蚀剂组合物。本发明优选的光致抗蚀剂组合物包含一种或多种可与抗蚀剂的树脂组分基本上不可混合的材料。本发明的另外优选的光致抗蚀剂组合物包括1）Si取代，2）氟取代; 3）超支化聚合物; 和/或4）聚合物颗粒。本发明的特别优选的光致抗蚀剂可以在浸没光刻处理期间将抗蚀剂材料的浸出降低到与抗蚀剂层接触的浸没流体中。

7. 发明申请

US20130115553A1 TOPCOAT COMPOSITIONS AND PHOTOLITHOGRAPHIC METHODS 有权
标题翻译： TOPCOAT组合物和光刻方法
公开(公告)号：US20130115553A1
公开(公告)日：2013-05-09
申请号：US13671528
申请日：2012-11-07
申请人： Rohm and Haas Electronic Materials LLC
发明人： Deyan Wang
IPC分类号： C09D141/00 , G03F7/20 , G03F7/11
CPC分类号： G03F7/11 , C09D133/16 , C09D141/00 , G03F7/2041 , C08L33/16 , C08L2205/025
摘要： Topcoat compositions are provided that can be used in immersion lithography to form photoresist patterns. The topcoat compositions include a polymer system that includes a matrix polymer and a surface active polymer. The matrix polymer is present in the composition in a larger proportion by weight than the surface active polymer, and the surface active polymer has a lower surface energy than a surface energy of the matrix polymer. A solvent system includes a first organic solvent chosen from gamma-butyrolactone and/or gamma-valerolactone, and a second organic solvent. The first organic solvent has a higher surface energy than a surface energy of the surface active polymer, and a higher boiling point than a boiling point of the second organic solvent.
摘要翻译：提供面漆组合物，其可用于浸没式光刻以形成光致抗蚀剂图案。面漆组合物包括包含基质聚合物和表面活性聚合物的聚合物体系。基质聚合物以比表面活性聚合物重量更大的比例存在于组合物中，并且表面活性聚合物具有比基质聚合物的表面能更低的表面能。溶剂系统包括选自γ-丁内酯和/或γ-戊内酯的第一有机溶剂和第二有机溶剂。第一有机溶剂具有比表面活性聚合物的表面能更高的表面能，并且沸点高于第二有机溶剂的沸点。

8. 发明授权

US11572476B2 Anti-reflective coating 有权
公开(公告)号：US11572476B2
公开(公告)日：2023-02-07
申请号：US16790017
申请日：2020-02-13
申请人： Rohm and Haas Electronic Materials LLC
发明人： Deyan Wang , Sheng Liu
IPC分类号： C04B16/08 , C08K7/22 , C08F2/46 , C08F2/50 , C08G61/04 , C09D5/00 , C08K7/26 , C08L83/04 , C08L47/00 , C08G18/73 , C08G18/76 , C08G77/385 , C08K5/1515 , C08K5/095 , C08F220/18 , C08K5/05 , C08K5/06 , C08K5/07 , C08K3/36
摘要： There is provided a curable composition for forming an anti-reflective film. The composition includes: (a) hollow silica nanoparticles; (b) a siloxane binder having reactive groups; (c) at least one additional material having reactive groups; (d) an initiator; and (e) solvent. The siloxane binder is present in an amount that is at least 50% by weight of the total weight of (siloxane binder+additional materials having reactive groups). The weight ratio of hollow silica nanoparticles to the total of (siloxane binder+additional materials having reactive groups) is no greater than 1.75 to 1.

9. 发明授权

US10578969B2 Photoresist topcoat compositions and methods of processing photoresist compositions 有权
公开(公告)号：US10578969B2
公开(公告)日：2020-03-03
申请号：US16245631
申请日：2019-01-11
申请人： Rohm and Haas Electronic Materials LLC
发明人： Cong Liu , Doris H. Kang , Deyan Wang , Cheng-Bai Xu , Mingqi Li , Irvinder Kaur
IPC分类号： G03F7/11 , G03F7/09 , G03F7/038 , B05C11/08 , G03F7/00 , G03F7/16 , H01L21/027 , G03F7/40 , G03F7/38 , G03F7/20
摘要： Photoresist topcoat compositions, comprising: a first polymer comprising a first repeat unit of general formula (I) and a second repeat unit of general formula (II): wherein: R1 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R2 represents optionally fluorinated linear, branched or cyclic C1 to C20 alkyl; L1 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; a second polymer comprising a first repeat unit of general formula (III) and a second repeat unit of general formula (IV): wherein: R3 independently represents H, F or optionally fluorinated C1 to C4 alkyl; R4 represents linear, branched or cyclic C1 to C20 alkyl; R5 represents linear, branched or cyclic C1 to C20 fluoroalkyl; L2 represents a single bond or a multivalent linking group; and n is an integer of from 1 to 5; and a solvent. Coated substrates coated with the described topcoat compositions and methods of processing a photoresist composition are also provided. The invention finds particular applicability in the manufacture of semiconductor devices.

10. 发明申请

US20180265363A1 A METHOD OF MAKING A COMPOSITE MULTILAYER STRUCTURE 审中-公开
公开(公告)号：US20180265363A1
公开(公告)日：2018-09-20
申请号：US15764521
申请日：2015-09-29
申请人： Rohm and Haas Electronic Materials LLC , DOW GLOBAL TECHNOLOGIES LLC
发明人： Deyan Wang , Xiuyan Wang , Shaoguang Feng , Qiaowei Li , Qingqing Pang , Peter Trefonas, III
IPC分类号： C01B32/205 , C01B32/198 , B28B1/30 , B28B11/24
CPC分类号： C01B32/205 , B28B1/30 , B28B11/243 , C01B32/184 , C01B32/198 , C01B32/20
摘要： A method of making a multilayer structure is provided, comprising providing a substrate; providing a coating composition, comprising: a liquid carrier, a polycyclic aromatic additive and a MX/graphitic carbon precursor material having a formula (I); disposing the coating composition on the substrate to form a composite; optionally, baking the composite; annealing the composite under a forming gas atmosphere; whereby the composite is converted into an MX layer and a graphitic carbon layer disposed on the substrate providing the multilayer structure; wherein the MX layer is interposed between the substrate and the graphitic carbon layer in the multilayer structure.

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