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1. 发明授权

US09958750B2 Electrochromic window fabrication methods 有权
公开(公告)号：US09958750B2
公开(公告)日：2018-05-01
申请号：US13456056
申请日：2012-04-25
申请人： Ronald M. Parker , Robert T. Rozbicki , Yashraj Bhatnagar , Abhishek Anant Dixit , Anshu A. Pradhan
发明人： Ronald M. Parker , Robert T. Rozbicki , Yashraj Bhatnagar , Abhishek Anant Dixit , Anshu A. Pradhan
IPC分类号： G02F1/153 , G02F1/15 , G09G3/19 , H04N9/16 , B32B17/10 , G02F1/161 , B32B37/18 , B32B38/00 , G02F1/1345 , G02F1/155
CPC分类号： G02F1/1533 , B32B17/10055 , B32B17/10128 , B32B17/10183 , B32B17/10513 , B32B17/10697 , B32B17/10908 , B32B17/10917 , B32B17/1099 , B32B37/18 , B32B38/0008 , B32B38/105 , B32B2333/12 , B32B2457/20 , G02F1/13458 , G02F1/1523 , G02F1/155 , G02F1/161 , Y10T29/49002 , Y10T83/0304 , Y10T428/2419 , Y10T428/24231
摘要： Methods of manufacturing electrochromic windows are described. Insulated glass units (IGU's) are protected, e.g. during handling and shipping, by a protective bumper. The bumper can be custom made using IGU dimension data received from the IGU fabrication tool. The bumper may be made of environmentally friendly materials. Laser isolation configurations and related methods of patterning and/or configuring an electrochromic device on a substrate are described. Edge deletion is used to ensure a good seal between spacer and glass in an IGU and thus better protection of an electrochromic device sealed in the IGU. Configurations for protecting the electrochromic device edge in the primary seal and maximizing viewable area in an electrochromic pane of an IGU are also described.

2. 发明申请

US20120327499A1 ELECTROCHROMIC WINDOW FABRICATION METHODS 有权
标题翻译：电光窗制造方法
公开(公告)号：US20120327499A1
公开(公告)日：2012-12-27
申请号：US13456056
申请日：2012-04-25
申请人： Ronald M. Parker , Robert T. Rozbicki , Yashraj Bhatnagar , Abhishek Anant Dixit , Anshu A. Pradhan
发明人： Ronald M. Parker , Robert T. Rozbicki , Yashraj Bhatnagar , Abhishek Anant Dixit , Anshu A. Pradhan
IPC分类号： G02F1/161 , H05K13/00 , B32B38/04 , B32B3/04 , B32B37/14 , G02F1/153 , B26D3/06
CPC分类号： G02F1/1533 , B32B17/10055 , B32B17/10128 , B32B17/10183 , B32B17/10513 , B32B17/10697 , B32B17/10908 , B32B17/10917 , B32B17/1099 , B32B37/18 , B32B38/0008 , B32B38/105 , B32B2333/12 , B32B2457/20 , G02F1/13458 , G02F1/1523 , G02F1/155 , G02F1/161 , Y10T29/49002 , Y10T83/0304 , Y10T428/2419 , Y10T428/24231
摘要： Methods of manufacturing electrochromic windows are described. Insulated glass units (IGU's) are protected, e.g. during handling and shipping, by a protective bumper. The bumper can be custom made using IGU dimension data received from the IGU fabrication tool. The bumper may be made of environmentally friendly materials. Laser isolation configurations and related methods of patterning and/or configuring an electrochromic device on a substrate are described. Edge deletion is used to ensure a good seal between spacer and glass in an IGU and thus better protection of an electrochromic device sealed in the IGU. Configurations for protecting the electrochromic device edge in the primary seal and maximizing viewable area in an electrochromic pane of an IGU are also described.
摘要翻译：描述制造电致变色窗的方法。绝缘玻璃单元（IGU）被保护，例如。在处理和运输期间，通过保护保险杠。保险杠可以使用从IGU制造工具接收的IGU尺寸数据定制。保险杠可以由环保材料制成。描述了在衬底上图案化和/或配置电致变色器件的激光隔离构造和相关方法。边缘删除用于确保IGU中间隔物和玻璃之间的良好密封，从而更好地保护密封在IGU中的电致变色器件。还描述了用于保护主密封件中的电致变色器件边缘并使IGU的电致变色窗格中的可见面积最大化的配置。

3. 发明授权

US10802371B2 Thin-film devices and fabrication 有权
公开(公告)号：US10802371B2
公开(公告)日：2020-10-13
申请号：US15539650
申请日：2015-12-24
申请人： View, Inc. , Abhishek Anant Dixit , Todd William Martin , Anshu A. Pradhan , Fabian Strong
发明人： Abhishek Anant Dixit , Todd William Martin , Anshu A. Pradhan , Fabian Strong , Robert T. Rozbicki
IPC分类号： G02F1/153 , G02F1/1523 , G02F1/155 , H01L27/144 , B23K26/082 , B23K26/402 , B23K26/57 , B23K26/08 , B23K26/0622 , B23K26/38 , E06B9/24 , B23K26/361 , B32B17/06 , C03B33/07 , H01B5/14 , B23K103/18 , B23K101/40 , B23K103/00 , B23K103/16
摘要： Thin-film devices, for example electrochromic devices for windows, and methods of manufacturing are described. Particular focus is given to methods of patterning optical devices. Various edge deletion and isolation scribes are performed, for example, to ensure the optical device has appropriate isolation from any edge defects. Methods described herein apply to any thin-film device having one or more material layers sandwiched between two thin film electrical conductor layers. The described methods create novel optical device configurations.

4. 发明申请

US20120275008A1 ELECTROCHROMIC DEVICES 有权
标题翻译：电致发光器件
公开(公告)号：US20120275008A1
公开(公告)日：2012-11-01
申请号：US13462725
申请日：2012-05-02
申请人： Anshu A. Pradhan , Robert T. Rozbicki
发明人： Anshu A. Pradhan , Robert T. Rozbicki
IPC分类号： G02F1/15 , C23C14/34 , C23C14/08
CPC分类号： G02F1/1506 , C03C2217/91 , C09K9/00 , C23C14/08 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/34 , C23C14/3464 , C23C14/568 , G02F1/1525 , G02F1/155 , G02F2001/1512 , G02F2001/1555
摘要： Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.
摘要翻译：常规的电致变色器件经常具有差的可靠性和差的性能。使用完全固体和无机材料进行改进。通过形成用作IC层的离子传导电绝缘界面区域来制造电致变色器件。在一些方法中，在形成电致变色剂和对电极层之后形成界面区域。界面区域包含离子传导电绝缘材料以及电致变色和/或对电极层的成分。与常规设备相比，电致变色器件的材料和微结构提供了性能和可靠性的改进。

5. 发明授权

US09771646B2 Lithium sputter targets 有权
公开(公告)号：US09771646B2
公开(公告)日：2017-09-26
申请号：US14112909
申请日：2012-04-20
申请人： Martin John Neumann , Que Anh Song Nguyen , Disha Mehtani , Anshu A. Pradhan , Robert T. Rozbicki , Dhairya Shrivastava , Trevor Frank , Todd Martin
发明人： Martin John Neumann , Que Anh Song Nguyen , Disha Mehtani , Anshu A. Pradhan , Robert T. Rozbicki , Dhairya Shrivastava , Trevor Frank , Todd Martin
IPC分类号： C23C14/34 , H01J37/34
CPC分类号： C23C14/3407 , C01B33/113 , C01G9/02 , C01G19/02 , C08L23/06 , C23C14/3414 , H01J37/3414 , H01J37/3426 , H01J37/3435
摘要： Described are methods of fabricating lithium sputter targets, lithium sputter targets, associated handling apparatus, and sputter methods including lithium targets. Various embodiments address adhesion of the lithium metal target to a support structure, avoiding and/or removing passivating coatings formed on the lithium target, uniformity of the lithium target as well as efficient cooling of lithium during sputtering. Target configurations used to compensate for non-uniformities in sputter plasma are described. Modular format lithium tiles and methods of fabrication are described. Rotary lithium sputter targets are also described.

6. 发明授权

US09261751B2 Electrochromic devices 有权
标题翻译：电致变色装置
公开(公告)号：US09261751B2
公开(公告)日：2016-02-16
申请号：US13462725
申请日：2012-05-02
申请人： Anshu A. Pradhan , Robert T. Rozbicki
发明人： Anshu A. Pradhan , Robert T. Rozbicki
IPC分类号： G02F1/15 , C23C14/08 , C23C14/56 , C09K9/00 , G02F1/155
CPC分类号： G02F1/1506 , C03C2217/91 , C09K9/00 , C23C14/08 , C23C14/083 , C23C14/085 , C23C14/14 , C23C14/34 , C23C14/3464 , C23C14/568 , G02F1/1525 , G02F1/155 , G02F2001/1512 , G02F2001/1555
摘要： Conventional electrochromic devices frequently suffer from poor reliability and poor performance. Improvements are made using entirely solid and inorganic materials. Electrochromic devices are fabricated by forming an ion conducting electronically-insulating interfacial region that serves as an IC layer. In some methods, the interfacial region is formed after formation of an electrochromic and a counter electrode layer. The interfacial region contains an ion conducting electronically-insulating material along with components of the electrochromic and/or the counter electrode layer. Materials and microstructure of the electrochromic devices provide improvements in performance and reliability over conventional devices.
摘要翻译：常规的电致变色器件经常具有差的可靠性和差的性能。使用完全固体和无机材料进行改进。通过形成用作IC层的离子传导电绝缘界面区域来制造电致变色器件。在一些方法中，在形成电致变色剂和对电极层之后形成界面区域。界面区域包含离子传导电绝缘材料以及电致变色和/或对电极层的成分。与常规设备相比，电致变色器件的材料和微结构提供了性能和可靠性的改进。

7. 发明授权

US09117884B1 Conformal films on semiconductor substrates 有权
标题翻译：半导体衬底上的保形膜
公开(公告)号：US09117884B1
公开(公告)日：2015-08-25
申请号：US13619077
申请日：2012-09-14
申请人： Roey Shaviv , Sanjay Gopinath , Peter Holverson , Anshu A. Pradhan
发明人： Roey Shaviv , Sanjay Gopinath , Peter Holverson , Anshu A. Pradhan
IPC分类号： H01L21/687 , C23C14/04 , H01L21/768 , C23C14/02 , H01L21/285
CPC分类号： H01L21/76843 , C23C14/025 , C23C14/046 , H01L21/2855 , H01L21/68714 , H01L21/76805 , H01L21/76865 , H01L21/76873
摘要： A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal.
摘要翻译：扩散阻挡层或种子材料层沉积在具有凹陷特征的半导体衬底上。该方法可以包括一系列新的沉积循环，例如第一净沉积循环和第二净沉积循环。第一净沉积循环包括沉积第一沉积量的扩散阻挡物或种子材料并蚀刻第一蚀刻量的扩散阻挡层或种子材料。第二净沉积循环包括沉积第二沉积量的扩散阻挡层或种子材料并蚀刻第二蚀刻量的扩散阻挡层或种子材料。第一循环的工艺参数中的至少一个不同于第二循环的工艺参数允许提供分级沉积效应以降低损坏任何下层和电介质的风险。扩散阻挡层或种子材料的沉积层通常更为共形。

8. 发明授权

US08298933B2 Conformal films on semiconductor substrates 有权
标题翻译：半导体衬底上的保形膜
公开(公告)号：US08298933B2
公开(公告)日：2012-10-30
申请号：US12467200
申请日：2009-05-15
申请人： Roey Shaviv , Sanjay Gopinath , Peter Holverson , Anshu A. Pradhan
发明人： Roey Shaviv , Sanjay Gopinath , Peter Holverson , Anshu A. Pradhan
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , C23C14/025 , C23C14/046 , H01L21/2855 , H01L21/68714 , H01L21/76805 , H01L21/76865 , H01L21/76873
摘要： A layer of diffusion barrier or seed material is deposited on a semiconductor substrate having a recessed feature. The method may include a series of new deposition cycles, for example, a first net deposition cycle and a second net deposition cycle. The first net deposition cycle includes depositing a first deposited amount of the diffusion barrier or seed material and etching a first etched amount of the diffusion barrier or seed material. The second net deposition cycle including depositing a second deposited amount of the diffusion barrier or seed material and etching a second etched amount of the diffusion barrier or seed material. At least one of the process parameters of the first cycle differs from that of the second allows providing a graded deposition effects to reduce a risk of damaging any under layers and dielectric. A deposited layer of diffusion barrier or seed material is generally more conformal.
摘要翻译：扩散阻挡层或种子材料层沉积在具有凹陷特征的半导体衬底上。该方法可以包括一系列新的沉积循环，例如第一净沉积循环和第二净沉积循环。第一净沉积循环包括沉积第一沉积量的扩散阻挡物或种子材料并蚀刻第一蚀刻量的扩散阻挡层或种子材料。第二净沉积循环包括沉积第二沉积量的扩散阻挡层或种子材料并蚀刻第二蚀刻量的扩散阻挡层或种子材料。第一循环的工艺参数中的至少一个不同于第二循环的工艺参数允许提供分级沉积效应以降低损坏任何下层和电介质的风险。扩散阻挡层或种子材料的沉积层通常更为共形。

9. 发明授权

US07922880B1 Method and apparatus for increasing local plasma density in magnetically confined plasma 有权
标题翻译：用于增加磁限制等离子体中局部等离子体密度的方法和装置
公开(公告)号：US07922880B1
公开(公告)日：2011-04-12
申请号：US11807182
申请日：2007-05-24
申请人： Anshu A. Pradhan , Douglas B. Hayden , Ronald L. Kinder , Alexander Dulkin
发明人： Anshu A. Pradhan , Douglas B. Hayden , Ronald L. Kinder , Alexander Dulkin
IPC分类号： C23C14/35 , C23C16/00
CPC分类号： C23C14/351 , H01J37/3266 , H01J37/3405 , H01J37/3461
摘要： Local plasma density, e.g., the plasma density in the vicinity of the substrate, is increased by providing an ion extractor configured to transfer ions and electrons from a first region of magnetically confined plasma (typically a region of higher density plasma) to a second region of plasma (typically a region of lower density plasma). The second region of plasma is preferably also magnetically shaped or confined and resides between the first region of plasma and the substrate. A positively biased conductive member positioned proximate the second region of plasma serves as an ion extractor. A positive bias of about 50-300 V is applied to the ion extractor causing electrons and subsequently ions to be transferred from the first region of plasma to the vicinity of the substrate, thereby forming higher density plasma. Provided methods and apparatus are used for deposition and resputtering.
摘要翻译：局部等离子体密度例如衬底附近的等离子体密度通过提供离子提取器来增加，该离子提取器配置成将离子和电子从磁限制等离子体（通常是较高密度等离子体的区域）的第一区域转移到第二区域的等离子体（通常是较低密度等离子体的区域）。等离子体的第二区域优选地也是磁性地形成或限制的并且位于等离子体的第一区域和衬底之间。靠近等离子体的第二区域定位的有偏压的导电构件用作离子提取器。对离子提取器施加约50-300V的正偏压，引起电子，随后离子从等离子体的第一区域转移到衬底附近，从而形成更高密度的等离子体。所提供的方法和装置用于沉积和再溅射。

10. 发明授权

US07897516B1 Use of ultra-high magnetic fields in resputter and plasma etching 有权
标题翻译：在溅射和等离子体蚀刻中使用超高磁场
公开(公告)号：US07897516B1
公开(公告)日：2011-03-01
申请号：US11807183
申请日：2007-05-24
申请人： Ronald L. Kinder , Anshu A. Pradhan
发明人： Ronald L. Kinder , Anshu A. Pradhan
IPC分类号： H01L21/302
CPC分类号： H01L21/32131 , H01J37/321 , H01J37/3402 , H01L21/2855 , H01L21/76805 , H01L21/76844 , H01L21/76865 , H01L21/76873
摘要： Methods for resputtering and plasma etching include an operation of generating an ultra-high density plasma using an ultra-high magnetic field. For example, a plasma density of at least about 1013 electrons/cm3 is achieved by confining a plasma using a magnetic field of at least about 1 Tesla. The ultra-high density plasma is used to create a high flux of low energy ions at the wafer surface. The formed high density low energy plasma can be used to sputter etch a diffusion barrier or a seed layer material in the presence of an exposed low-k dielectric layer. For example, a diffusion barrier material can be etched with a high etch rate to deposition rate (E/D) ratio (e.g., with E/D>2) without substantially damaging an exposed dielectric layer. Resputtering and plasma etching can be performed, for example, in iPVD and in plasma pre-clean tools, equipped with magnets configured for confining a plasma.
摘要翻译：用于再溅射和等离子体蚀刻的方法包括使用超高磁场产生超高密度等离子体的操作。例如，通过使用至少约1特斯拉的磁场约束等离子体来实现至少约1013电子/ cm 3的等离子体密度。超高密度等离子体用于在晶片表面产生高能量的低能量离子。形成的高密度低能量等离子体可用于在暴露的低k电介质层的存在下溅射蚀刻扩散阻挡层或种子层材料。例如，扩散阻挡材料可以以高的蚀刻速率对沉积速率（E / D）比（例如，E / D> 2）进行蚀刻，而不会显着损坏暴露的介电层。溅射和等离子体蚀刻可以例如在iPVD和等离子体预清洁工具中进行，其中配备有用于限制等离子体的磁体。

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