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    • 4. 发明授权
    • Imaging cartridge and electrophotographic image forming apparatus using the same
    • 成像盒和使用其的电子照相成像设备
    • US09465354B2
    • 2016-10-11
    • US14592504
    • 2015-01-08
    • SAMSUNG ELECTRONICS CO., LTD.
    • Seung-chan ParkDong-cheol AhnSang-hoon LeeSeong-ho Jeong
    • G03G21/18
    • G03G21/1825G03G21/1817
    • An imaging cartridge includes a photoconductive unit including a photoconductor on which an elastic latent image is formed; a development unit including a development roller that supplies toner to the photoconductor to develop the toner and a gap maintaining member that constrains an approach distance of the development roller with respect to the photoconductor; a first position determining portion provided in the development unit; a lateral bracket that is fixed to a side portion of the photoconductive unit and has a second position determining portion that guides the first position determining portion so as to movably support the development unit; and an elastic member that applies to the development unit an elastic force in a direction in which the development roller approaches the photoconductive unit.
    • 一个成像盒包括一个光导单元,它包括一个形成有弹性潜像的感光体; 显影单元,其包括将调色剂供应到感光体以显影调色剂的显影辊和限制显影辊相对于感光体的接近距离的间隙保持部件; 设置在显影单元中的第一位置确定部分; 固定在光电导体单元侧面的横向支架,具有引导第一位置确定部分以可移动地支撑显影单元的第二位置确定部分; 以及弹性构件,其向显影单元施加沿显影辊接近感光单元的方向的弹力。
    • 5. 发明授权
    • Flash memory system and read method in flash memory system
    • 闪存系统中的闪存系统和读取方法
    • US08850292B2
    • 2014-09-30
    • US13656849
    • 2012-10-22
    • Samsung Electronics Co., Ltd.
    • Sang-hoon Lee
    • G11C29/00
    • G06F11/1072H03M13/1102H03M13/6306
    • Methods of operating nonvolatile memory devices include reading a first plurality of multi-bit nonvolatile memory cells in the nonvolatile memory device using a first plurality of read voltages to thereby generate first read data, and then rereading the first plurality of multi-bit nonvolatile memory cells using a second plurality of read voltages that differ, at least in part, from the first plurality of read voltages, to thereby generate second read data. An operation is then undertaken to perform first and second ECC decoding operations on the first and second read data, respectively, to thereby identify whether the first read data or the second read data more accurately reflects data stored in the first plurality of multi-bit nonvolatile memory cells during the reading and rereading.
    • 操作非易失性存储器件的方法包括使用第一多个读取电压读取非易失性存储器件中的第一多个多位非易失性存储器单元,从而产生第一读取数据,然后重新读取第一多个多位非易失性存储器单元 使用至少部分地与第一多个读取电压不同的第二多个读取电压,从而生成第二读取数据。 然后进行操作以分别对第一和第二读取数据执行第一和第二ECC解码操作,从而识别第一读取数据或第二读取数据是否更准确地反映存储在第一多个多位非易失性存储器中的数据 读取和重读过程中的记忆单元。