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    • 10. 发明授权
    • Nanostructure semiconductor light emitting device
    • 纳米结构半导体发光器件
    • US09461205B2
    • 2016-10-04
    • US14338174
    • 2014-07-22
    • SAMSUNG ELECTRONICS CO., LTD.
    • Nam Goo ChaHyun Seong KumJu Bin SeoDong Hoon Lee
    • H01L27/15H01L33/24H01L33/18H01L33/08
    • H01L33/24H01L33/08H01L33/18H01L33/385
    • A nanostructure semiconductor light emitting device includes a base layer, an insulating layer and a plurality of light emitting nanostructures. The base layer is formed of a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. Each of the light emitting nanostructures is disposed on the exposed regions of the base layer and includes nanocore formed of a first conductivity type semiconductor, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on side surfaces of the nanocore. Upper surfaces of the light emitting nanostructures are non-planar and contain portions free of the second conductivity-type semiconductor layer in order to prevent light emissions during device driving.
    • 纳米结构半导体发光器件包括基底层,绝缘层和多个发光纳米结构。 基层由第一导电型半导体形成。 绝缘层设置在基底层上并具有多个开口,基底层的区域暴露在该开口中。 每个发光纳米结构设置在基底层的暴露区域上,并且包括由第一导电型半导体形成的纳米孔,以及顺序地设置在纳米孔的侧表面上的有源层和第二导电类型半导体层。 发光纳米结构的上表面是非平面的,并且包含不含第二导电型半导体层的部分,以便防止器件驱动期间的光发射。