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1. 发明授权

US09269743B2 Methods of forming imaging device layers using carrier substrates 有权
标题翻译：使用载体基板形成成像装置层的方法
公开(公告)号：US09269743B2
公开(公告)日：2016-02-23
申请号：US14086336
申请日：2013-11-21
申请人： Semiconductor Components Industries, LLC
发明人： Ulrich Boettiger , Swarnal Borthakur , Andrew Perkins
IPC分类号： H01L27/146
CPC分类号： H01L27/14685 , H01L27/14621
摘要： An array of color filter elements may be formed over an array of photodiodes in an integrated circuit for an imaging device using a carrier substrate. The carrier substrate may have a planar surface with a release layer. A layer of color filter material may be applied to the release layer. The carrier substrate may then be flipped and the layer of color filter material may be bonded to the integrated circuit. Heat may be applied to activate the release layer and the carrier substrate may be removed at the interface between the release layer and the color filter material. The layer of color filter material may be patterned either before bonding the layer of color filter material or after the carrier substrate is removed. A layer of microlenses may be formed over the array of color filter elements using a carrier substrate.
摘要翻译：可以在用于使用载体衬底的成像装置的集成电路中的光电二极管阵列上形成滤色器元件阵列。载体基底可以具有带有释放层的平坦表面。可以将一层滤色器材料施加到释放层。然后可以将载体衬底翻转，并且滤色器材料层可以结合到集成电路。可以施加热量以激活释放层，并且可以在剥离层和滤色器材料之间的界面处去除载体衬底。彩色滤光片材料层可以在结合滤色器材料层之前或在移除载体衬底之后进行图案化。可以使用载体衬底在彩色滤光器阵列的阵列上形成微透镜层。

2. 发明授权

US09362330B2 Methods for forming backside illuminated image sensors with front side metal redistribution layers and a permanent carrier layer 有权
标题翻译：用前侧金属再分布层和永久性载体层形成背面照明图像传感器的方法
公开(公告)号：US09362330B2
公开(公告)日：2016-06-07
申请号：US14215975
申请日：2014-03-17
申请人： Semiconductor Components Industries, LLC
发明人： Swarnal Borthakur , Kevin W. Hutto , Andrew Perkins , Marc Sulfridge
IPC分类号： H01L31/00 , H01L27/146 , H01L31/0203 , H01L31/20 , H01L31/0224
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/14621 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L31/0203 , H01L31/022408 , H01L31/20 , H01L2224/13
摘要： Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.
摘要翻译：提供了用于形成具有金属再分布层（RDL）的背面照明（BSI）图像传感器和用于与外部电路的高性能连接的焊料凸块的方法。在一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用临时载体形成，其在BSI图像传感器完成之前被移除。在另一个实施例中，具有RDL和焊料凸块的BSI图像传感器可以在制造期间使用永久载体形成，其部分保留在完整的BSI图像传感器中。 BSI图像传感器可以在形成BSI图像传感器的前侧上的再分布层之前形成。或者，可以在形成图像晶片的背面上的诸如微透镜和滤色器之类的BSI部件之前，在图像晶片的正面上形成再分布层。

3. 发明授权

US09635228B2 Image sensors with interconnects in cover layer 有权
公开(公告)号：US09635228B2
公开(公告)日：2017-04-25
申请号：US14466770
申请日：2014-08-22
申请人： Semiconductor Components Industries, LLC
发明人： Swarnal Borthakur , Nathan Lee , Andrew Perkins , Marc Sulfridge
IPC分类号： H04N5/225 , H01L27/146
CPC分类号： H04N5/2253 , H01L27/14618 , H01L27/14625 , H01L27/14627 , H01L2224/16225 , H01L2224/48091 , H01L2224/48227 , H01L2224/73253 , H01L2224/73265 , H01L2924/00014
摘要： An image sensor die may include a pixel array formed in an image sensor substrate and covered by a transparent cover layer. The transparent cover layer may be attached to the image sensor substrate using adhesive. Electrical interconnect structures such as conductive vias may be formed in the transparent cover layer and may be used in conveying electrical signals between the image sensor and a printed circuit board. The conductive vias may have one end coupled to a bond pad on the upper surface of the transparent cover layer and an opposing end coupled to a bond pad on the upper surface of the image sensor substrate. The conductive vias may pass through openings that extend through the transparent cover layer and the adhesive. Conductive structures such as wire bonds, stud bumps, or solder balls may be coupled to the bond pads on the surface of the transparent cover layer.

4. 发明授权

US09666638B2 Methods for forming backside illuminated image sensors with front side metal redistribution layers 有权
公开(公告)号：US09666638B2
公开(公告)日：2017-05-30
申请号：US15133052
申请日：2016-04-19
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Swarnal Borthakur , Kevin W. Hutto , Andrew Perkins , Marc Sulfridge
IPC分类号： H01L27/00 , H01L27/146 , H01L31/0203 , H01L31/20 , H01L31/0224
CPC分类号： H01L27/14687 , H01L27/14618 , H01L27/14621 , H01L27/14636 , H01L27/1464 , H01L27/14685 , H01L31/0203 , H01L31/022408 , H01L31/20 , H01L2224/13
摘要： Methods for forming backside illuminated (BSI) image sensors having metal redistribution layers (RDL) and solder bumps for high performance connection to external circuitry are provided. In one embodiment, a BSI image sensor with RDL and solder bumps may be formed using a temporary carrier during manufacture that is removed prior to completion of the BSI image sensor. In another embodiment, a BSI image sensor with RDL and solder bumps may be formed using a permanent carrier during manufacture that partially remains in the completed BSI image sensor. A BSI image sensor may be formed before formation of a redistribution layer on the front side of the BSI image sensor. A redistribution layer may, alternatively, be formed on the front side of an image wafer before formation of BSI components such as microlenses and color filters on the back side of the image wafer.

5. 发明授权

US09041840B2 Backside illuminated image sensors with stacked dies 有权
标题翻译：背面照明图像传感器与堆叠的模具
公开(公告)号：US09041840B2
公开(公告)日：2015-05-26
申请号：US13972249
申请日：2013-08-21
申请人： Semiconductor Components Industries, LLC
发明人： Swarnal Borthakur , Scott Churchwell , Ulrich Boettiger , Marc Sulfridge , Andrew Perkins , Rick Lake
IPC分类号： H04N5/335 , H04N5/225 , H01L27/146
CPC分类号： H04N5/335 , H01L27/14612 , H01L27/14616 , H01L27/14641 , H01L2224/16225 , H01L2224/73267 , H04N5/2253 , H04N5/2254
摘要： An image sensor unit may have a backside-illuminated imager and an image co-processor stacked together. The image co-processor may be mounted in a cavity in a permanent carrier. The permanent carrier may include fluid channels that allow cooling fluid to flow past the image co-process and past the imager, thereby removing excess heat generated by the image sensor unit during operation.
摘要翻译：图像传感器单元可以具有背面照射的成像器和图像协处理器堆叠在一起。图像协处理器可以安装在永久载体中的空腔中。永久性载体可以包括允许冷却流体流过图像协同处理并经过成像器的流体通道，从而在操作期间消除由图像传感器单元产生的多余的热量。

6. 发明授权

US09497366B1 Imaging systems with integrated light shield structures 有权
标题翻译：具有集成光屏蔽结构的成像系统
公开(公告)号：US09497366B1
公开(公告)日：2016-11-15
申请号：US14723147
申请日：2015-05-27
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Ulrich Boettiger , Andrew Perkins , Marc Sulfridge , Swarnal Borthakur
IPC分类号： H04N5/225 , H04N9/04 , H01L27/146
CPC分类号： H01L27/14623 , H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/14685 , H04N5/2254 , H04N9/045
摘要： An imaging system may include an image sensor having an array of pixels. The image sensor may include an array of microlenses formed over a substrate and an array of color filter elements interposed between the microlenses and the substrate. Dielectric wall structures may be interposed between the color filter elements. Light shield structures may be formed within or on the dielectric wall structures and may be used to reduce optical crosstalk between adjacent pixels. The light shield structures may be formed on opposing sides or corners of the color filter elements and may partially or fully extend along the height of the color filter elements. In some arrangements, the light shield structures may each have a vertical portion that contacts a side surface of an adjacent color filter element and a horizontal portion that contacts a lower surface of an adjacent color filter element.
摘要翻译：成像系统可以包括具有像素阵列的图像传感器。图像传感器可以包括形成在衬底上的微透镜阵列和插入在微透镜和衬底之间的滤色器元件的阵列。电介质壁结构可以插在滤色器元件之间。光屏蔽结构可以形成在电介质壁结构内或上，并且可以用于减少相邻像素之间的光学串扰。遮光结构可以形成在滤色器元件的相对侧或角上，并且可以沿着滤色器元件的高度部分或全部地延伸。在一些布置中，遮光结构可以各自具有接触相邻滤色器元件的侧表面的垂直部分和接触相邻滤色器元件的下表面的水平部分。

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