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1. 发明申请

US20200295126A1 Electronic Device Including a Semiconductor Body or an Isolation Structure Within a Trench 审中-公开
公开(公告)号：US20200295126A1
公开(公告)日：2020-09-17
申请号：US16515243
申请日：2019-07-18
申请人： Semiconductor Components Industries, LLC
发明人： Moshe Agam , Jaroslav Pjencák , Johan Camiel Julia Janssens
IPC分类号： H01L29/04 , H01L29/861 , H01L29/8605 , H01L29/78 , H01L29/739 , H01L29/73 , H01L27/06 , H01L27/01
摘要： An electronic device can include a substrate defining a trench. In an embodiment, a semiconductor body can be within the trench, wherein the semiconductor body has a resistivity of at least 0.05 ohm-cm and is electrically isolated from the substrate. In an embodiment, an electronic component can be within the semiconductor body. The electronic component can be a resistor or a diode. In a particular embodiment, the semiconductor body has an upper surface, the electronic component is within and along an upper surface and spaced apart from a bottom of the semiconductor body. In a further embodiment, the electronic device can further include a first electronic component within an active region of the substrate, an isolation structure within the trench, and a second electronic component within the isolation structure.

2. 发明授权

US10224323B2 Isolation structure for semiconductor device having self-biasing buried layer and method therefor 有权
公开(公告)号：US10224323B2
公开(公告)日：2019-03-05
申请号：US15669579
申请日：2017-08-04
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Moshe Agam , Johan Camiel Julia Janssens , Jaroslav Pjencak , Thierry Yao , Mark Griswold , Weize Chen
IPC分类号： H01L21/00 , H01L27/07 , H01L27/088 , H01L27/098 , H01L29/739 , H01L29/06 , H01L29/10 , H01L29/66 , H01L29/861 , H01L29/78
摘要： A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. A trench isolation structure extends from the first major surface and terminates within the semiconductor region and the floating buried doped region abuts the trench isolation structure. A second doped region is disposed in the first doped region has an opposite conductivity type to the first doped region. A first isolation device is disposed in the first doped region and is configured to divert current injected into the semiconductor device from other regions thereby delaying the triggering of an internal SCR structure. In one embodiment, a second isolation structure is disposed within the first doped region and is configured to disrupt a leakage path along a sidewall surface of the trench isolation structure.

3. 发明授权

US10084039B2 Semiconductor device having self-isolating bulk substrate and method therefor 有权
公开(公告)号：US10084039B2
公开(公告)日：2018-09-25
申请号：US15659450
申请日：2017-07-25
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Johan Camiel Julia Janssens
IPC分类号： H01L29/78 , H01L27/08 , H01L29/06 , H01L27/06 , H01L27/092 , H01L27/088 , H01L23/552 , H01L29/10
CPC分类号： H01L29/0646 , H01L21/761 , H01L21/762 , H01L21/76224 , H01L21/823481 , H01L21/823493 , H01L23/552 , H01L27/0623 , H01L27/0629 , H01L27/088 , H01L27/0922 , H01L29/063 , H01L29/0649 , H01L29/1087 , H01L29/7816
摘要： A semiconductor device comprises a bulk semiconductor substrate that includes a first conductivity type floating buried doped region bounded above by a second conductivity type doped region and bounded below by another second conductivity semiconductor region. Trench isolation regions extend through the second conductivity doped region and the first conductivity floating buried doped region into the semiconductor region. Functional devices are disposed within the second conductivity type doped region. The first conductivity type floating buried doped region is configured as a self-biased region that laterally extends between adjacent trench isolation regions.

4. 发明授权

US09971374B2 HV MOS leakage compensation for ultralow current operation 有权
公开(公告)号：US09971374B2
公开(公告)日：2018-05-15
申请号：US15148140
申请日：2016-05-06
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Dieter Joos , Johan Camiel Julia Janssens
IPC分类号： G05F3/04 , G05F3/24 , H03K17/12
CPC分类号： G05F3/242 , H03K17/122 , H03K17/162
摘要： Various disclosed leakage compensation apparatus and methods enable HV MOS transistors to be employed for ultralow current operation. One illustrative embodiment is a backup energy block that includes: a pair of input terminals that couple to a backup energy source; an anti-series switch that supplies power from the pair of input terminals to a voltage regulator (when closed) and isolates power from the pair of input terminals to the voltage regulator (when open); a control current source; and an HV MOS control transistor that selectively couples the control current source to a control signal line to open and close the anti-series switch; and a compensation current source coupled to the control signal line to provide a compensation current matched to a parasitic leakage current from the control transistor. The compensation current source includes an HV MOS compensation transistor matched to the control transistor.

5. 发明授权

US09929261B2 Electronic device including a HEMT with a segmented gate electrode 有权
公开(公告)号：US09929261B2
公开(公告)日：2018-03-27
申请号：US15092858
申请日：2016-04-07
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Peter Moens , Jaume Roig-Guitart , Marnix Tack , Johan Camiel Julia Janssens
IPC分类号： H01L27/088 , H01L29/778 , H01L29/40 , H01L29/417 , H01L29/423 , H01L29/66 , H01L23/482 , H01L29/20 , H01L29/51
CPC分类号： H01L29/7786 , H01L23/482 , H01L23/4824 , H01L27/0883 , H01L29/2003 , H01L29/402 , H01L29/41758 , H01L29/4238 , H01L29/518 , H01L29/66462
摘要： An electronic device can include a low-side HEMT including a segmented gate electrode; and a high-side HEMT coupled to the low-side HEMT, wherein the low-side and high voltage HEMTs are integrated within a same semiconductor die. In another aspect, an electronic device can include a source electrode; a low-side HEMT; a high-side HEMT coupled to the low-side HEMT; and a resistive element. In an embodiment, the resistive element can be coupled to the source electrode and a gate electrode of the high voltage HEMT, and in another embodiment, the resistive element can be coupled to the source electrode and a drain of the low-side HEMT. A process of forming an electronic device can include forming a channel layer over a substrate; and forming a gate electrode over the channel layer. The gate electrode can be a segmented gate electrode of a HEMT.

6. 发明授权

US09748330B2 Semiconductor device having self-isolating bulk substrate and method therefor 有权
公开(公告)号：US09748330B2
公开(公告)日：2017-08-29
申请号：US15140152
申请日：2016-04-27
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Johan Camiel Julia Janssens
IPC分类号： H01L29/06 , H01L23/552 , H01L27/088 , H01L29/10 , H01L27/092 , H01L29/78 , H01L27/06
CPC分类号： H01L29/0646 , H01L21/761 , H01L21/762 , H01L21/76224 , H01L21/823481 , H01L21/823493 , H01L23/552 , H01L27/0623 , H01L27/0629 , H01L27/088 , H01L27/0922 , H01L29/063 , H01L29/0649 , H01L29/1087 , H01L29/7816
摘要： In one embodiment, a semiconductor device comprises a bulk semiconductor substrate that includes a first conductivity type floating buried doped region bounded above by a second conductivity type doped region and bounded below by another second conductivity semiconductor region. Dielectric isolation regions extend through the second conductivity doped region and the first conductivity floating buried doped region into the semiconductor region. Functional devices are disposed within the second conductivity type doped region. The first conductivity type floating buried doped region is configured as a self-biased region that laterally extends between adjacent dielectric isolation regions.

7. 发明授权

US09590499B2 Drive circuit and method 有权
标题翻译：驱动电路及方法
公开(公告)号：US09590499B2
公开(公告)日：2017-03-07
申请号：US14751370
申请日：2015-06-26
申请人： Semiconductor Components Industries, LLC
发明人： Johan Camiel Julia Janssens
IPC分类号： H02M3/158 , H02M3/07 , H01L41/04 , H04R3/00
CPC分类号： H02M3/07 , H01L41/042 , H02M2003/071 , H04R3/00
摘要： In accordance with an embodiment, a transformer-less drive circuit is provided that includes a switch control network having an output terminal connected to a first switch and another output terminal connected to a second switch. A driver connected to the second switch. In accordance with another embodiment, a method for generating a drive signal is provided that includes charging a first energy storage element to a first voltage level and a second energy storage element to a second voltage level. The charge stored in the second energy storage element is increased so that the second energy storage element stores a voltage at a third voltage level. The terminals of the second energy storage element are alternately connected to a fourth voltage level. The second energy storage element is used to supply or drive a driver.
摘要翻译：根据实施例，提供了一种无变压器驱动电路，其包括具有连接到第一开关的输出端子和连接到第二开关的另一输出端子的开关控制网络。连接到第二开关的驱动器。根据另一个实施例，提供了一种用于产生驱动信号的方法，其包括将第一能量存储元件充电到第一电压电平并将第二能量存储元件充电到第二电压电平。存储在第二能量存储元件中的电荷增加，使得第二能量存储元件将电压存储在第三电压电平。第二能量存储元件的端子交替地连接到第四电压电平。第二能量存储元件用于提供或驱动驾驶员。

8. 发明授权

US11018129B2 Circuit that changes voltage of back electrode of transistor based on error condition 有权
公开(公告)号：US11018129B2
公开(公告)日：2021-05-25
申请号：US16125921
申请日：2018-09-10
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Jaume Roig-Guitart , Johan Camiel Julia Janssens
IPC分类号： H01L27/02 , H01L27/06 , H01L29/778 , H01L29/20
摘要： A circuit can comprise a transistor, a sensor, and a switch. The transistor can include a drain electrode, a gate electrode, a source electrode, and a back electrode. The sensor can be configured to detect an error condition in the transistor. The switch can be configured to change a voltage at the back electrode in response to the sensor detecting the error condition in the transistor, the change of the voltage at the back electrode reducing current flow between the drain electrode and the source electrode.

9. 发明授权

US10276556B2 Semiconductor device having biasing structure for self-isolating buried layer and method therefor 有权
公开(公告)号：US10276556B2
公开(公告)日：2019-04-30
申请号：US16004718
申请日：2018-06-11
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Moshe Agam , Johan Camiel Julia Janssens , Bruce Greenwood , Sallie Hose , Agajan Suwhanov
IPC分类号： H01L29/06 , H01L27/02 , H01L21/76 , H01L23/535 , H01L29/36 , H01L29/66 , H01L29/739 , H01L21/762 , H01L21/265
摘要： A semiconductor device includes a floating buried doped region, a first doped region disposed between the floating buried doped region and a first major surface, and a semiconductor region disposed between the floating buried doped region and a second major surface. Trench isolation portions extend from the first major surface and terminate within the semiconductor region to define an active region. An insulated trench structure is laterally disposed between the trench isolation portions, terminates within the floating buried doped region, and defines a first portion and a second portion of the active region. A biasing semiconductor device is within the first portion, and a functional semiconductor device is within the second portion. The biasing semiconductor device is adapted to set a potential of the floating buried doped region and adapted to divert parasitic currents away from the functional semiconductor device.

10. 发明授权

US10164529B2 Spread spectrum clock generator and method 有权
公开(公告)号：US10164529B2
公开(公告)日：2018-12-25
申请号：US15245467
申请日：2016-08-24
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Dieter Jozef Joos , David Pierre Jean Robert Levacq , Johan Camiel Julia Janssens
IPC分类号： H02M1/44 , H03K3/0231 , H02M3/158 , H03B23/00 , H04B1/69 , H02M3/157 , H03B5/20 , H04B15/06
摘要： In one form, a spread spectrum clock generator includes an oscillator and a digital modulator. The oscillator has a control input for setting an output frequency, and an output for providing a clock output signal. The digital modulator is responsive to the clock output signal to provide a control code to the control input of the oscillator as a periodic signal with a plurality of discrete steps, wherein the digital modulator provides said control code at each of said plurality of discrete steps for substantially a predetermined time.

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