专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US11600489B2 Semiconductor device and method for manufacturing the semiconductor device 有权
公开(公告)号：US11600489B2
公开(公告)日：2023-03-07
申请号：US16972413
申请日：2019-05-31
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Tetsuya Kakehata , Yuji Egi , Yasuhiro Jinbo , Yujiro Sakurada
IPC分类号： H01L21/02 , H01L29/786 , H01L29/51 , H01L21/8234
摘要： A semiconductor device having favorable electrical characteristics is provided. A metal oxide is formed over a substrate by the steps of: introducing a first precursor into a chamber in which the substrate is provided; introducing a first oxidizer after the introduction of the first precursor; introducing a second precursor after the introduction of the first oxidizer; and introducing a second oxidizer after the introduction of the second precursor.

2. 发明授权

US10985278B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US10985278B2
公开(公告)日：2021-04-20
申请号：US15211160
申请日：2016-07-15
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuya Kakehata
IPC分类号： H01L21/00 , H01L29/786 , H01L29/66
摘要： An insulator is formed over a substrate, an opening is formed in the insulator, and an oxide semiconductor is formed in the opening. Then, part of the insulator is removed to expose a side surface of the oxide semiconductor.

3. 发明授权

US11508850B2 Manufacturing method of semiconductor device 有权
公开(公告)号：US11508850B2
公开(公告)日：2022-11-22
申请号：US17271716
申请日：2019-08-30
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Naoki Okuno , Tetsuya Kakehata , Hiroki Komagata , Yuji Egi
IPC分类号： H01L29/786 , H01L21/02 , H01L29/66
摘要： A manufacturing method of a semiconductor device includes the forming a first oxide over a substrate; depositing a first insulator over the first oxide; forming an opening reaching the first oxide in the first insulator; depositing a first oxide film in contact with the first oxide and the first insulator in the opening; depositing a first insulating film over the first oxide film by a PEALD method; depositing a first conductive film over the first insulating film; and removing part of the first oxide film, part of the first insulating film, and part of the first conductive film until a top surface of the first insulator is exposed to form a second oxide, a second insulator, and a first conductor. The deposition of the first insulating film is performed while the substrate is heated to higher than or equal to 300°.

4. 发明授权

US09184173B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US09184173B2
公开(公告)日：2015-11-10
申请号：US14043062
申请日：2013-10-01
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tamae Takano , Tetsuya Kakehata , Shunpei Yamazaki
IPC分类号： H01L29/792 , H01L27/115 , H01L27/105 , H01L27/12 , H01L27/13 , H01L29/423
CPC分类号： H01L27/1157 , H01L27/105 , H01L27/11526 , H01L27/11546 , H01L27/11568 , H01L27/1214 , H01L27/1251 , H01L27/13 , H01L29/4234 , H01L29/792 , H01L29/7923
摘要： The invention provides a semiconductor device and its manufacturing method in which a memory transistor and a plurality of thin film transistors that have gate insulating films with different thicknesses are fabricated over a substrate. The invention is characterized by the structural difference between the memory transistor and the plurality of thin film transistors. Specifically, the memory transistor and some of the plurality of thin film transistors are provided to have a bottom gate structure while the other thin film transistors are provided to have a top gate structure, which enables the reduction of characteristic defects of the transistor and simplification of its manufacturing process.

5. 发明授权

US08884371B2 SOI substrate and manufacturing method thereof 有权
标题翻译： SOI衬底及其制造方法
公开(公告)号：US08884371B2
公开(公告)日：2014-11-11
申请号：US14134047
申请日：2013-12-19
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuya Kakehata , Hideto Ohnuma , Yoshiaki Yamamoto , Kenichiro Makino
IPC分类号： H01L27/12 , H01L29/02 , H01L29/786 , H01L31/0352 , H01L29/06 , H01L29/78 , H01L21/762 , H01L29/66
CPC分类号： H01L27/1218 , H01L21/76254 , H01L27/1214 , H01L27/1266 , H01L29/0649 , H01L29/66772 , H01L29/78 , H01L29/78603 , H01L31/0352
摘要： An object is to provide an SOI substrate provided with a semiconductor layer which can be used practically even when a glass substrate is used as a base substrate. Another object is to provide a semiconductor device having high reliability using such an SOI substrate. An altered layer is formed on at least one surface of a glass substrate used as a base substrate of an SOI substrate to form the SOI substrate. The altered layer is formed on at least the one surface of the glass substrate by cleaning the glass substrate with solution including hydrochloric acid, sulfuric acid or nitric acid. The altered layer has a higher proportion of silicon oxide in its composition and a lower density than the glass substrate.
摘要翻译：本发明的目的是提供一种具有半导体层的SOI衬底，即使在使用玻璃衬底作为基底衬底时也可以实际使用。另一个目的是提供一种使用这种SOI衬底具有高可靠性的半导体器件。在用作SOI衬底的基底衬底的玻璃衬底的至少一个表面上形成改变的层，以形成SOI衬底。通过用包括盐酸，硫酸或硝酸的溶液清洗玻璃基板，在玻璃基板的至少一个表面上形成改变的层。改变的层在其组成中具有较高比例的氧化硅，并且具有比玻璃基底更低的密度。

6. 发明授权

US11362034B2 Semiconductor device having a laminate contact plug of specified configuration including a conductive metal oxide layer 有权
公开(公告)号：US11362034B2
公开(公告)日：2022-06-14
申请号：US16979244
申请日：2019-03-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuya Kakehata , Yuta Endo
IPC分类号： H01L23/532 , H01L21/768
摘要： A semiconductor device that is miniaturized and highly integrated is provided. One embodiment of the present invention is a semiconductor device including a first insulator, a second insulator, a first conductor, a second conductor, and a semiconductor layer; the first insulator includes an opening exposing the semiconductor layer; the first conductor is provided in contact with the semiconductor layer at a bottom of the opening; the second insulator is provided in contact with a top surface of the first conductor and a side surface in the opening; the second conductor is provided in contact with the top surface of the first conductor and in the opening with the second insulator therebetween; and the second insulator has a barrier property against oxygen.

7. 发明授权

US09536774B2 SOI substrate, method for manufacturing the same, and semiconductor device 有权
标题翻译： SOI衬底，其制造方法和半导体器件
公开(公告)号：US09536774B2
公开(公告)日：2017-01-03
申请号：US14336245
申请日：2014-07-21
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hideto Ohnuma , Tetsuya Kakehata , Yoichi Iikubo
IPC分类号： H01L21/762 , H01L21/84
CPC分类号： H01L21/76254 , H01L21/84
摘要： An SOI substrate having an SOI layer that can be used in practical applications even when a substrate with low upper temperature limit, such as a glass substrate, is used, is provided. A semiconductor device using such an SOI substrate, is provided. In bonding a single-crystal semiconductor layer to a substrate having an insulating surface or an insulating substrate, a silicon oxide film formed using organic silane as a material on one or both surfaces that are to form a bond is used. According to the present invention, a substrate with an upper temperature limit of 700° C. or lower, such as a glass substrate, can be used, and an SOI layer that is strongly bonded to the substrate can be obtained. In other words, a single-crystal semiconductor layer can be formed over a large-area substrate that is longer than one meter on each side.
摘要翻译：提供了即使使用诸如玻璃基板的具有低的上限温度的基板也可以在实际应用中使用具有SOI层的SOI衬底。提供了使用这种SOI衬底的半导体器件。在将单晶半导体层接合到具有绝缘表面的基板或绝缘基板上时，使用在有一个或两个表面上形成键的有机硅烷作为材料形成的氧化硅膜。根据本发明，可以使用具有700℃以上的上限温度的基板，例如玻璃基板，并且可以获得与基板强结合的SOI层。换句话说，单晶半导体层可以形成在每侧长于1米的大面积基板上。

8. 发明授权

US10026966B2 Negative electrode for lithium secondary battery, lithium secondary battery, and manufacturing methods thereof 有权
公开(公告)号：US10026966B2
公开(公告)日：2018-07-17
申请号：US13691929
申请日：2012-12-03
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Tetsuya Kakehata , Ryota Tajima , Teppei Oguni , Takeshi Osada , Shunpei Yamazaki , Shunsuke Adachi , Takuya Hirohashi
IPC分类号： H01M4/70 , H01M4/04 , H01M4/66 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/62 , B82Y30/00 , H01M10/052 , H01M4/02
摘要： A lithium secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and a negative electrode active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. A top surface of the base portion and at least a side surface of the protrusion portion are covered with the negative electrode active material layer. The negative electrode active material layer may be covered with graphene.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式