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1. 发明申请

US20220122562A1 Semiconductor Device, and Display Device and Electronic Device Utilizing the Same 有权
公开(公告)号：US20220122562A1
公开(公告)日：2022-04-21
申请号：US17563157
申请日：2021-12-28
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hajime Kimura , Yutaka Shionoiri
IPC分类号： G09G5/00 , G09G3/36 , H01L27/12 , H03K19/0185
摘要： A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.

2. 发明授权

US11217200B2 Semiconductor device, and display device and electronic device utilizing the same 有权
公开(公告)号：US11217200B2
公开(公告)日：2022-01-04
申请号：US17120373
申请日：2020-12-14
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hajime Kimura , Yutaka Shionoiri
IPC分类号： G09G5/00 , G09G3/36 , H03K19/0185 , H01L27/12
摘要： A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor, the gate terminal of a first transistor is brought into a floating state. At this time, the first transistor is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor is increased, a potential at the gate terminal of the first transistor is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.

3. 发明授权

US10897258B2 Semiconductor device 有权
公开(公告)号：US10897258B2
公开(公告)日：2021-01-19
申请号：US16705326
申请日：2019-12-06
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Masashi Fujita , Yutaka Shionoiri , Kiyoshi Kato , Hidetomo Kobayashi
IPC分类号： H03K19/17728 , H03K19/173 , H03K19/17772 , H03K19/17758
摘要： An object is to provide a semiconductor device that can maintain the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units even after supply of power supply voltage is stopped. Another object is to provide a semiconductor device in which the connection relation between logic circuit units or the circuit configuration of each of the logic circuit units can be changed at high speed. In a reconfigurable circuit, an oxide semiconductor is used for a semiconductor element that stores data on the circuit configuration, connection relation, or the like. Specifically, the oxide semiconductor is used for a channel formation region of the semiconductor element.

4. 发明授权

US09829946B2 Power reception control device, power reception device, power transmission and reception system, and electronic device 有权
公开(公告)号：US09829946B2
公开(公告)日：2017-11-28
申请号：US15059705
申请日：2016-03-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Misako Miwa , Yutaka Shionoiri
IPC分类号： G06F1/32 , G06F1/26 , G06F1/28
CPC分类号： G06F1/26 , G06F1/28 , G06F1/3203 , G06F1/3278 , G06F1/3287 , Y02D10/157 , Y02D10/171
摘要： Provided is a power reception device in which power consumption at the time of wireless power supply is reduced. A power reception device is provided with a power reception control device capable of temporarily stopping supply of power supply voltage to a communication control unit for controlling communication in a break period of communication intermittently performed between a power transmission device and a power reception device. In the structure, a clock signal is generated on the basis of a power receiving signal transmitted from the power transmission device, and a period of communication intermittently performed can be measured using the clock signal. Further, a structure may be employed in which supply of power supply voltage to the communication unit in the power reception control device can be stopped in the break period of the communication.

5. 发明授权

US09472974B2 Wireless power feeding system and wireless power feeding method 有权
标题翻译：无线供电系统和无线供电方式
公开(公告)号：US09472974B2
公开(公告)日：2016-10-18
申请号：US14481435
申请日：2014-09-09
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Yutaka Shionoiri , Koichiro Kamata , Misako Sato , Shuhei Maeda
IPC分类号： H01F38/00 , H02J7/02 , H04B5/00 , H02J5/00
CPC分类号： H02J50/12 , H02J7/025 , H02J50/20 , H02J50/40 , H02J50/80 , H02J50/90 , H04B5/0037 , H04B5/0093
摘要： An object is to provide a power feeding system and a power feeding method which are more convenient for a power feeding user at the power receiving end. An object is to provide a power feeding system and a power feeding method which also allow a power feeding provider (a company) which feeds power (at the power transmitting end) to supply power without waste. A power feeding device which wirelessly supplies power to a power receiver detects the position and the resonant frequency of the power receiver to be supplied with power, and controls the frequency of a power signal to be transmitted to the power receiver on the basis of the information. An efficient power feeding service can be offered by transmitting a power signal to the power receiver at an optimum frequency for high power transmission efficiency.
摘要翻译：本发明的目的是提供一种供电系统和馈电方法，其对于电力接收端的馈电用户更为方便。本发明的目的是提供一种馈电系统和馈电方法，其还允许馈电供应商（在发电端发电）供电而不浪费电力。向功率接收器无线供电的供电装置检测供电电源的位置和谐振频率，并根据信息控制发送到电力接收器的电力信号的频率。通过以最佳频率向功率接收器发送功率信号以实现高功率传输效率，可以提供有效的馈电服务。

6. 发明授权

US09472293B2 Method for driving semiconductor device and semiconductor device 有权
公开(公告)号：US09472293B2
公开(公告)日：2016-10-18
申请号：US14990908
申请日：2016-01-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shuhei Nagatsuka , Hiroki Inoue , Takahiko Ishizu , Takanori Matsuzaki , Yutaka Shionoiri , Kiyoshi Kato
IPC分类号： G11C16/08 , G11C16/24 , G11C16/04
CPC分类号： G11C16/24 , G11C11/5642 , G11C16/04 , G11C16/0408 , G11C16/0441 , G11C16/045 , G11C16/08 , H01L27/1156 , H01L27/1225 , H01L29/7869 , H01L29/78696
摘要： To read multilevel data from a memory cell having a transistor using silicon and a transistor using an oxide semiconductor, without switching a signal for reading the multilevel data in accordance with the number of the levels of the multilevel data. The potential of the bit line is precharged, the electrical charge of the bit line is discharged via a transistor for writing data, and the potential of the bit line which is changed by the discharging is read as multilevel data. With such a structure, the potential corresponding to data held in a gate of the transistor can be read by only one-time switching of a signal for reading data.

7. 发明申请

US20160217761A1 Semiconductor Device, and Display Device and Electronic Device Utilizing the Same 有权
公开(公告)号：US20160217761A1
公开(公告)日：2016-07-28
申请号：US14941739
申请日：2015-11-16
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hajime Kimura , Yutaka Shionoiri
IPC分类号： G09G5/00
CPC分类号： G09G5/003 , G09G3/36 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , G09G2330/021 , H01L27/124 , H01L27/1255 , H03K19/018507
摘要： A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.

8. 发明申请

US20160203871A1 METHOD FOR DRIVING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：用于驱动半导体器件和半导体器件的方法
公开(公告)号：US20160203871A1
公开(公告)日：2016-07-14
申请号：US14990908
申请日：2016-01-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shuhei Nagatsuka , Hiroki Inoue , Takahiko Ishizu , Takanori Matsuzaki , Yutaka Shionoiri , Kiyoshi Kato
IPC分类号： G11C16/24
CPC分类号： G11C16/24 , G11C11/5642 , G11C16/04 , G11C16/0408 , G11C16/0441 , G11C16/045 , G11C16/08 , H01L27/1156 , H01L27/1225 , H01L29/7869 , H01L29/78696
摘要： To read multilevel data from a memory cell having a transistor using silicon and a transistor using an oxide semiconductor, without switching a signal for reading the multilevel data in accordance with the number of the levels of the multilevel data. The potential of the bit line is precharged, the electrical charge of the bit line is discharged via a transistor for writing data, and the potential of the bit line which is changed by the discharging is read as multilevel data. With such a structure, the potential corresponding to data held in a gate of the transistor can be read by only one-time switching of a signal for reading data.
摘要翻译：从具有使用硅的晶体管的存储单元和使用氧化物半导体的晶体管读取多电平数据，而不用根据多电平数据的电平数来切换用于读取多电平数据的信号。位线的电位被预充电，位线的电荷通过用于写入数据的晶体管放电，并且由放电改变的位线的电位被读取为多电平数据。通过这样的结构，可以通过仅读取数据的信号的一次切换来读取对应于保持在晶体管的栅极中的数据的电位。

9. 发明授权

US09391674B2 Power feeding system and power feeding method 有权
标题翻译：供电系统和供电方式
公开(公告)号：US09391674B2
公开(公告)日：2016-07-12
申请号：US13864303
申请日：2013-04-17
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Misako Miwa , Koichiro Kamata , Yutaka Shionoiri , Shuhei Maeda
IPC分类号： H01F27/42 , H01F38/00 , H01F37/00 , H04B5/00
CPC分类号： H04B5/0037 , H04B5/0087
摘要： To provide a power feeding system and the like with which charging can be performed without a decrease in the power supply efficiency. To provide a power feeding system and the like with which can offer a power feeding service which is efficient to both a power feeding user and a power feeding provider. The power transmission state in each of power transmitting portions is monitored, the power transmitting portion having the highest power transmission efficiency is selected based on positional advantage, and the power transmitting resonance coil included in the selected power transmitting portion is kept at a first resonance frequency, whereby power transmission continues. The resonance frequency of the power transmitting resonance coil included in the non-selected power transmitting portion (the number of the non-selected power transmitting portions may be plural) is set to a second resonance frequency, whereby power transmission is stopped.
摘要翻译：为了提供能够进行充电而不降低电力供给效率的供电系统等。为了提供能够提供对供电用户和供电提供者都有效的供电服务的供电系统等。监视每个电力传输部分中的电力传输状态，基于位置优势选择具有最高功率传输效率的电力传输部分，并且包括在所选择的电力发送部分中的电力发送谐振线圈保持在第一谐振频率，从而继续传输电力。包括在未选择的动力传递部中的动力传递共振线圈（未选择的动力传递部的数量可以是多个）的共振频率被设定为第二共振频率，从而停止动力传递。

10. 发明授权

US09190425B2 Semiconductor device, and display device and electronic device utilizing the same 有权
标题翻译：半导体装置，显示装置及利用该装置的电子装置
公开(公告)号：US09190425B2
公开(公告)日：2015-11-17
申请号：US14472748
申请日：2014-08-29
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Hajime Kimura , Yutaka Shionoiri
IPC分类号： G09G3/36 , H01L27/12 , H03K19/0185
CPC分类号： G09G5/003 , G09G3/36 , G09G2310/0267 , G09G2310/0275 , G09G2310/0286 , G09G2310/0289 , G09G2330/021 , H01L27/124 , H01L27/1255 , H03K19/018507
摘要： A semiconductor device having a normal function means is provided, in which the amplitude of an output signal is prevented from being decreased even when a digital circuit using transistors having one conductivity is employed. By turning OFF a diode-connected transistor 101, the gate terminal of a first transistor 102 is brought into a floating state. At this time, the first transistor 102 is ON and its gate-source voltage is stored in a capacitor. Then, when a potential at the source terminal of the first transistor 102 is increased, a potential at the gate terminal of the first transistor 102 is increased as well by bootstrap effect. As a result, the amplitude of an output signal is prevented from being decreased.
摘要翻译：提供具有正常功能装置的半导体器件，其中即使采用使用具有一个导电性的晶体管的数字电路，也可以防止输出信号的振幅降低。通过关断二极管连接的晶体管101，使第一晶体管102的栅极端子成为浮置状态。此时，第一晶体管102导通，其栅源电压被存储在电容器中。然后，当第一晶体管102的源极端子处的电位增加时，第一晶体管102的栅极端子处的电位也通过自举效应增加。结果，防止输出信号的幅度减小。

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