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1. 发明申请

US20190280178A1 LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING CELLS 审中-公开
公开(公告)号：US20190280178A1
公开(公告)日：2019-09-12
申请号：US16424178
申请日：2019-05-28
申请人： SEOUL VIOSYS CO., LTD. , SEOUL VIOSYS CO., LTD.
发明人： Se Hee OH , Hyun A KIM , Jong Kyu KIM , Jong Hyeon CHAE
IPC分类号： H01L33/62 , H01L33/32 , H01L33/10 , H01L33/64
摘要： A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.

2. 发明申请

US20210359188A1 LIGHT EMITTING DIODE 有权
公开(公告)号：US20210359188A1
公开(公告)日：2021-11-18
申请号：US17389025
申请日：2021-07-29
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jae Kwon KIM , Min Chan HEO , Kyoung Wan KIM , Jong Kyu KIM , Hyun A KIM , Joon Sup LEE
IPC分类号： H01L33/62 , H01L33/46 , H01L27/15 , H01L33/10
摘要： A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

3. 发明申请

US20210151628A1 CHIP-SCALE PACKAGE LIGHT EMITTING DIODE 有权
公开(公告)号：US20210151628A1
公开(公告)日：2021-05-20
申请号：US17157600
申请日：2021-01-25
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jong Kyu KIM , Min Woo KANG , Se Hee OH , Hyoung Jin LIM
IPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L33/44
摘要： A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

4. 发明申请

US20160197243A1 LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：具有分布式布拉格反射器的发光二极管芯片及其制造方法
公开(公告)号：US20160197243A1
公开(公告)日：2016-07-07
申请号：US15069260
申请日：2016-03-14
申请人： Seoul Viosys Co., Ltd.
发明人： Sum Geun LEE , Sang Ki JIN , Jin Cheol SHIN , Jong Kyu KIM , So Ra LEE , Chung Hoon LEE
IPC分类号： H01L33/46 , H01L33/62 , H01L33/00
CPC分类号： H01L27/153 , H01L33/0008 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/42 , H01L33/46 , H01L33/505 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2933/0025 , H01L2933/0033 , H01L2933/0041 , H01L2933/0058 , H01L2924/00014
摘要： A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.
摘要翻译：一种包括封装体和引线的发光二极管封装，所述封装体包括安装表面，设置在所述安装表面上的发光结构，所述发光结构包括设置在第一导电型半导体层和第二导电型半导体层，设置在发光结构上的荧光体层和布置在发光结构和安装表面之间的分布式布拉格反射器。分布式布拉格反射器包括第一分布式布拉格反射器和第二分布布拉格反射器，并且第一分布式布拉格反射器内的材料层的光学厚度大于第二分布布拉格反射器内材料层的光学厚度。

5. 发明申请

US20150076532A1 LIGHT EMITTING DIODE 审中-公开
标题翻译：发光二极管
公开(公告)号：US20150076532A1
公开(公告)日：2015-03-19
申请号：US14551808
申请日：2014-11-24
申请人： SEOUL VIOSYS CO., LTD.
发明人： Yeo Jin YOON , Jong Kyu KIM , Jun Hee LEE
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L27/156 , H01L33/385 , H01L33/387 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： AC LED according to the present invention comprises a substrate, and at least one serial array having a plurality of light emitting cells connected in series on the substrate. Each of the light emitting cells comprises a lower semiconductor layer consisting of a first conductive compound semiconductor layer formed on top of the substrate, an upper semiconductor layer consisting of a second conductive compound semiconductor layer formed on top of the lower semiconductor layer, an active layer interposed between the lower and upper semiconductor layers, a lower electrode formed on the lower semiconductor layer exposed at a first corner of the substrate, an upper electrode layer formed on the upper semiconductor layer, and an upper electrode pad formed on the upper electrode layer exposed at a second corner of the substrate. The upper electrode pad and the lower electrode are respectively disposed at the corners diagonally opposite to each other, and the respective light emitting cells are arranged so that the upper electrode pad and the lower electrode of one of the light emitting cells are symmetric with is respect to those of adjacent another of the light emitting cells.
摘要翻译：根据本发明的AC LED包括衬底和至少一个具有串联连接在衬底上的多个发光单元的串联阵列。每个发光单元包括由形成在基板顶部上的第一导电化合物半导体层构成的下半导体层，由形成于下半导体层顶部的第二导电化合物半导体层构成的上半导体层，活性层介于下半导体层和上半导体层之间的下电极，形成在衬底的第一角上露出的下半导体层上的下电极，形成在上半导体层上的上电极层和形成在上电极层上的上电极焊盘在基片的第二个角落。上电极焊盘和下电极分别设置在彼此对角相对的角上，并且各发光单元被布置成使得一个发光单元的上电极焊盘和下电极相对于对称到相邻的发光单元的那些。

6. 发明公开

US20230299240A1 CHIP-SCALE PACKAGE LIGHT EMITTING DIODE 审中-公开
公开(公告)号：US20230299240A1
公开(公告)日：2023-09-21
申请号：US18153205
申请日：2023-01-11
申请人： Seoul Viosys Co., Ltd.
发明人： Jong Kyu KIM , Min Woo Kang , Se Hee Oh , Hyoung Jin Lim
IPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L33/44
CPC分类号： H01L33/382 , H01L33/20 , H01L33/405 , H01L33/44 , H01L33/32
摘要： A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

7. 发明申请

US20150311398A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：US20150311398A1
公开(公告)日：2015-10-29
申请号：US14791824
申请日：2015-07-06
申请人： SEOUL VIOSYS CO., LTD.
发明人： Seom Geun LEE , Jong Kyu KIM , Yeo Jin YOON , Jae Kwon KIM , Mae Yi KIM
IPC分类号： H01L33/42 , H01L33/46 , H01L33/08 , H01L33/62
CPC分类号： H01L27/15 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： An exemplary embodiment discloses a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate, the first light emitting cell and the second light emitting cell being spaced apart from each other. The light emitting diode also includes a first zinc oxide (ZnO) layer disposed on the first light emitting cell, the first ZnO layer being electrically connected to the first light emitting cell. The light emitting diode also includes a current blocking layer disposed between a portion of the first light emitting cell and the first ZnO layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and a first side of insulation layer are connected to each other.
摘要翻译：示例性实施例公开了一种包括第一发光单元和设置在基板上的第二发光单元的发光二极管，第一发光单元和第二发光单元彼此间隔开。发光二极管还包括设置在第一发光单元上的第一氧化锌（ZnO）层，第一ZnO层电连接到第一发光单元。发光二极管还包括设置在第一发光单元的一部分和第一ZnO层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在互连之间的绝缘层和第一发光单元的侧面。电流阻挡层和绝缘层的第一侧彼此连接。

8. 发明申请

US20140175465A1 LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20140175465A1
公开(公告)日：2014-06-26
申请号：US14135925
申请日：2013-12-20
申请人： SEOUL VIOSYS CO., LTD.
发明人： Seom Geun LEE , Jong Kyu KIM , Yeo Jin YOON , Jae Kwon KIM , Mae Yi KIM
IPC分类号： H01L33/62 , H01L27/15
CPC分类号： H01L27/15 , H01L27/156 , H01L33/007 , H01L33/0075 , H01L33/06 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/145 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0066 , H01L2924/00
摘要： Exemplary embodiments of the present invention provide a light emitting diode including a first light emitting cell and a second light emitting cell disposed on a substrate and spaced apart from each other, a first transparent electrode layer disposed on the first light emitting cell and electrically connected to the first light emitting cell, a current blocking layer disposed between a portion of the first light emitting cell and the first transparent electrode layer, an interconnection electrically connecting the first light emitting cell and the second light emitting cell, and an insulation layer disposed between the interconnection and a side surface of the first light emitting cell. The current blocking layer and the insulation layer are connected to each other.
摘要翻译：本发明的示例性实施例提供一种发光二极管，其包括第一发光单元和布置在基板上并彼此间隔开的第二发光单元，第一透明电极层，设置在第一发光单元上并电连接到第一发光单元，设置在第一发光单元的一部分和第一透明电极层之间的电流阻挡层，电连接第一发光单元和第二发光单元的互连以及设置在第一发光单元之间的绝缘层互连和第一发光单元的侧表面。电流阻挡层和绝缘层彼此连接。

9. 发明公开

US20240055563A1 CHIP-SCALE PACKAGE LIGHT EMITTING DIODE 审中-公开
公开(公告)号：US20240055563A1
公开(公告)日：2024-02-15
申请号：US18449179
申请日：2023-08-14
申请人： SEOUL VIOSYS CO., LTD.
发明人： Jong Kyu KIM , Min Woo KANG , Se Hee OH , Hyoung Jin LIM
IPC分类号： H01L33/38 , H01L33/20 , H01L33/40 , H01L33/44
CPC分类号： H01L33/382 , H01L33/20 , H01L33/405 , H01L33/44 , H01L33/32
摘要： A chip-scale package type light emitting diode includes a first conductivity type semiconductor layer, a mesa, a second conductivity type semiconductor layer, a transparent conductive oxide layer, a dielectric layer, a lower insulation layer, a first pad metal layer, and a second pad metal layer, an upper insulation layer. The upper insulation layer covers the first pad metal layer and the second pad metal layer, and includes a first opening exposing the first pad metal layer and a second opening exposing the second pad metal layer. The openings of the dielectric layer include openings that have different sizes from one another.

10. 发明申请

US20210257528A1 LIGHT EMITTING DIODE 有权
公开(公告)号：US20210257528A1
公开(公告)日：2021-08-19
申请号：US17246856
申请日：2021-05-03
申请人： SEOUL VIOSYS CO., LTD.
发明人： Se Hee OH , Hyun A KIM , Jong Kyu KIM , Hyoung Jin LIM
IPC分类号： H01L33/62 , H01L33/10 , H01L33/44 , H01L27/15 , H01L33/38 , H01L33/40 , H01L25/075 , H01L33/32 , H01L33/50 , H01L33/64
摘要： A light emitting diode includes a first conductivity type semiconductor layer, a mesa with an active layer and a second conductivity type semiconductor layer disposed thereon, a first contact layer comprising an outer contact portion contacting the first conductivity type semiconductor layer near an edge thereof and an inner contact portion contacting the first conductivity type semiconductor layer in a region surrounded by the outer contact portion; a second contact layer disposed on the mesa and contacting the second conductivity type semiconductor layer; a first insulation layer covering the mesa, insulating the first contact layer, and exposing the first conductivity type semiconductor layer for the outer contact portion and the inner contact portion to contact the first conductivity type semiconductor layer, wherein the outer contact portion and the first insulation layer alternately contact the first conductivity type semiconductor layer along a side surface of the mesa.

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