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1. 发明申请

US20160153120A1 GROUP III NITRIDE CRYSTALS, THEIR FABRICATION METHOD, AND METHOD OF FABRICATING BULK GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA 有权
公开(公告)号：US20160153120A1
公开(公告)日：2016-06-02
申请号：US14957536
申请日：2015-12-02
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B29/40 , C30B25/02 , C30B7/10 , H01L29/20 , C01B21/06
CPC分类号： C30B7/105 , C01B21/0632 , C01P2002/76 , C01P2004/60 , C30B25/02 , C30B25/16 , C30B29/406 , C30B29/68 , H01L29/2003 , Y02P20/544
摘要： In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.

2. 发明申请

US20160153115A1 GROUP III NITRIDE CRYSTALS, THEIR FABRICATION METHOD, AND METHOD OF FABRICATING BULK GROUP III NITRIDE CRYSTALS IN SUPERCRITICAL AMMONIA 有权
标题翻译：第III类氮化物晶体，它们的制造方法和制备超临界氨基酸中的第III组氮化物晶体的方法
公开(公告)号：US20160153115A1
公开(公告)日：2016-06-02
申请号：US14957549
申请日：2015-12-02
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B7/10 , C30B29/40 , C30B25/02
CPC分类号： C30B7/105 , C01B21/0632 , C01P2002/76 , C01P2004/60 , C30B25/02 , C30B25/16 , C30B29/406 , C30B29/68 , H01L29/2003 , Y02P20/544
摘要： In one instance, the invention provides a group III nitride crystal having a first side exposing nitrogen polar c-plane of single crystalline or highly oriented polycrystalline group III nitride and a second side exposing group III polar surface, polycrystalline phase, or amorphous phase of group III nitride. Such structure is useful as a seed crystal for ammonothermal growth of bulk group III nitride crystals. The invention also discloses the method of fabricating such crystal. The invention also discloses the method of fabricating a bulk crystal of group III nitride by ammonothermal method using such crystal.
摘要翻译：在一个实例中，本发明提供了一种III族氮化物晶体，其具有第一面暴露单晶或高取向多晶III族氮化物的氮极C面和第二侧暴露III族极性表面，多晶相或非晶相的组 III族氮化物。这种结构可用作本体III族氮化物晶体的氨热生长的晶种。本发明还公开了制造这种晶体的方法。本发明还公开了通过使用这种晶体的氨热法制造III族氮化物的块状晶体的方法。

3. 发明申请

US20150340444A1 GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD 有权
公开(公告)号：US20150340444A1
公开(公告)日：2015-11-26
申请号：US14720819
申请日：2015-05-24
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO , Edward LETTS
IPC分类号： H01L29/20 , H01L29/32
CPC分类号： C30B23/025 , C30B7/105 , C30B9/10 , C30B23/066 , C30B25/20 , C30B29/403 , C30B29/64 , C30B29/66 , H01L29/2003 , H01L29/32
摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.

4. 发明申请

US20150337453A1 GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
标题翻译：第III组氮化物大块晶体及其制造方法
公开(公告)号：US20150337453A1
公开(公告)日：2015-11-26
申请号：US14720815
申请日：2015-05-24
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO , Edward LETTS
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B23/025 , C30B7/105 , C30B9/10 , C30B23/066 , C30B25/20 , C30B29/403 , C30B29/64 , C30B29/66 , H01L29/2003 , H01L29/32
摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.
摘要翻译：在一个实例中，本发明提供了具有超过1mm厚度的III族氮化物的块状晶体，而不会在晶种的侧面上开裂。这种本体III族氮化物晶体表示为Gax1Aly1In1-x1-y1N（＆nlE; x1＆nlE; 1,0＆nlE; x1 + y1＆nlE; 1），晶种表示为Gax2Aly2In1-x2-y2N（0＆nlE; x2＆nlE; 1,0＆ x2 + y2＆nlE; 1）。 III族氮化物的块状晶体可以使用具有c取向的基面和m取向的侧壁的至少一种晶种在超临界氨或III族金属的熔体中生长。在这种情况下仅暴露c面和m面，避免了从晶种的侧面产生的裂纹。

5. 发明申请

US20150275391A1 HIGH PRESSURE REACTOR FOR SUPERCRITICAL AMMONIA 审中-公开
标题翻译：超高压高压反应器
公开(公告)号：US20150275391A1
公开(公告)日：2015-10-01
申请号：US14676281
申请日：2015-04-01
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C30B29/406 , Y10T117/1096
摘要： A high-pressure cylindrical reactor suitable for a high-pressure process using supercritical ammonia to form bulk crystals of group III nitride or transition metal nitride is disclosed. In one instance, the reactor has a reactor body and lid formed of precipitation hardenable Ni—Cr superalloy and is sealed by a gasket made of Ni-based metal. Ni content of the gasket is greater than Ni content of both the reactor body and lid. The gasket is tapered so that its thickest part is at or near the gasket's inner radius or circumference, and the thinnest part of the gasket is more than 0.2 inch thick and is at or near the gasket's outer radius or circumference. The gasket's surfaces are compressed at 60,000 psi or higher. This construction provides a consistent seal of the reactor for repeated use.
摘要翻译：公开了一种适用于使用超临界氨以形成III族氮化物或过渡金属氮化物的本体晶体的高压法的高压圆柱形反应器。在一种情况下，反应器具有反应器主体和由沉淀可硬化的Ni-Cr超合金制成的盖，并由由Ni基金属制成的垫圈密封。垫片的Ni含量大于反应器主体和盖子的Ni含量。垫片是锥形的，使得其最厚部分在垫圈的内半径或周长处或附近，并且垫圈的最薄部分大于0.2英寸厚，并且处于或接近垫圈的外半径或周长。垫片的表面在60,000 psi或更高压缩。这种结构为反复使用提供了一致的密封。

6. 发明申请

US20160076169A1 SUBSTRATES FOR GROWING GROUP III NITRIDE CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
标题翻译：用于生长III类氮化物晶体的基板及其制造方法
公开(公告)号：US20160076169A1
公开(公告)日：2016-03-17
申请号：US14849553
申请日：2015-09-09
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B29/20
CPC分类号： C30B25/18 , C30B29/406 , C30B33/06 , H01L21/02005 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658
摘要： In one instance, the invention provides a substrate for growing a thick layer of group III nitride. The substrate has a first surface prepared for epitaxial growth of group III nitride and a second surface, opposite to the first surface, having a plurality of grooves. The invention also provides a method of producing a thick layer or a bulk crystal of group III nitride using a grooved substrate. The grooved substrate in one configuration grows a thick layer or a bulk crystal of group III nitride with reduced bow and/or spontaneous separation from the substrate.
摘要翻译：在一个实例中，本发明提供了用于生长III族氮化物的厚层的衬底。衬底具有准备用于III族氮化物的外延生长的第一表面和与第一表面相对的第二表面，其具有多个凹槽。本发明还提供了一种使用沟槽衬底生产III族氮化物的厚层或块状晶体的方法。在一种构型中的带沟槽衬底通过减少弓形和/或从衬底自发分离而生长III族氮化物的厚层或块状晶体。

7. 发明申请

US20150337457A1 GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
标题翻译：第III组氮化物大块晶体及其制造方法
公开(公告)号：US20150337457A1
公开(公告)日：2015-11-26
申请号：US14720816
申请日：2015-05-24
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO , Edward LETTS
IPC分类号： C30B23/02 , C30B29/64 , C30B29/40 , C30B29/66 , C30B23/06 , C30B25/20
CPC分类号： C30B23/025 , C30B7/105 , C30B9/10 , C30B23/066 , C30B25/20 , C30B29/403 , C30B29/64 , C30B29/66 , H01L29/2003 , H01L29/32
摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.
摘要翻译：在一个实例中，本发明提供了具有超过1mm厚度的III族氮化物的块状晶体，而不会在晶种的侧面上开裂。这种本体III族氮化物晶体表示为Gax1Aly1In1-x1-y1N（0＆nlE; x1＆nlE; 1,0＆nlE; x1 + y1＆nlE; 1），晶种表示为Gax2Aly2In1-x2-y2N（0＆nlE; x2＆nlE; 1,0＆ x2 + y2＆nlE; 1）。 III族氮化物的块状晶体可以使用具有c取向的基面和m取向的侧壁的至少一种晶种在超临界氨或III族金属的熔体中生长。在这种情况下仅暴露c面和m面，避免了从晶种的侧面产生的裂纹。

8. 发明申请

US20150330919A1 GROUP III NITRIDE WAFERS AND FABRICATION METHOD AND TESTING METHOD 审中-公开
公开(公告)号：US20150330919A1
公开(公告)日：2015-11-19
申请号：US14806644
申请日：2015-07-22
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： G01N23/207 , H01L21/66 , H01L29/04 , C01B21/06 , H01L29/20
CPC分类号： G01N23/207 , B24B37/044 , C01B21/0632 , C01P2002/74 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , C30B33/06 , H01L21/0201 , H01L21/30625 , H01L21/78 , H01L22/12 , H01L29/045 , H01L29/2003 , H01L2924/0002 , H01L2924/00
摘要： The invention provides, in one instance, a group III nitride wafer sliced from a group III nitride ingot, polished to remove the surface damage layer and tested with x-ray diffraction. The x-ray incident beam is irradiated at an angle less than 15 degree and diffraction peak intensity is evaluated. The group III nitride wafer passing this test has sufficient surface quality for device fabrication. The invention also provides, in one instance, a method of producing group III nitride wafer by slicing a group III nitride ingot, polishing at least one surface of the wafer, and testing the surface quality with x-ray diffraction having an incident beam angle less than 15 degree to the surface. The invention also provides, in an instance, a test method for testing the surface quality of group III nitride wafers using x-ray diffraction having an incident beam angle less than 15 degree to the surface.

9. 发明申请

US20140054595A1 COMPOSITE SUBSTRATE OF GALLIUM NITRIDE AND METAL OXIDE 有权
标题翻译：氮化钛和金属氧化物的复合基材
公开(公告)号：US20140054595A1
公开(公告)日：2014-02-27
申请号：US13781509
申请日：2013-02-28
申请人： Seoul Semiconductor Co., Ltd. , SIXPOINT MATERIALS, INC.
发明人： Tadao HASHIMOTO
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , H01L21/02389 , H01L21/02488 , H01L21/0254 , H01L21/02658 , H01L21/31111 , H01L22/12 , H01L29/32
摘要： The present invention discloses a novel composite substrate which solves the problem associated with the quality of substrate surface. The composite substrate has at least two layers comprising the first layer composed of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) and the second layer composed of metal oxide wherein the second layer can be removed with in-situ etching at elevated temperature. The metal oxide layer is designed to act as a protective layer of the first layer until the fabrication of devices. The metal oxide layer is designed so that it can be removed in a fabrication reactor of the devices through gas-phase etching by reactive gas such as ammonia.
摘要翻译：本发明公开了一种解决与衬底表面质量相关的问题的新型复合衬底。复合衬底具有至少两层，包括由GaxAlyIn1-x-yN（0 @ x @ 1，x @ y + 1）组成的第一层和由金属氧化物组成的第二层，其中第二层可以用在高温下进行原位蚀刻。金属氧化物层被设计成用作第一层的保护层，直到器件的制造。金属氧化物层被设计成使得其可以通过气相蚀刻通过诸如氨的反应性气体在装置的制造反应器中除去。

10. 发明申请

US20160076168A1 SUBSTRATES FOR GROWING GROUP III NITRIDE CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
公开(公告)号：US20160076168A1
公开(公告)日：2016-03-17
申请号：US14849566
申请日：2015-09-09
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO
IPC分类号： C30B25/18 , C30B29/40 , C30B29/20
CPC分类号： C30B25/18 , C30B29/406 , C30B33/06 , H01L21/02005 , H01L21/0242 , H01L21/02433 , H01L21/0254 , H01L21/02658
摘要： In one instance, the invention provides a substrate for growing a thick layer of group III nitride. The substrate has a first surface prepared for epitaxial growth of group III nitride and a second surface, opposite to the first surface, having a plurality of grooves. The invention also provides a method of producing a thick layer or a bulk crystal of group III nitride using a grooved substrate. The grooved substrate in one configuration grows a thick layer or a bulk crystal of group III nitride with reduced bow and/or spontaneous separation from the substrate.

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