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1. 发明申请

US20150337457A1 GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
标题翻译：第III组氮化物大块晶体及其制造方法
公开(公告)号：US20150337457A1
公开(公告)日：2015-11-26
申请号：US14720816
申请日：2015-05-24
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO , Edward LETTS
IPC分类号： C30B23/02 , C30B29/64 , C30B29/40 , C30B29/66 , C30B23/06 , C30B25/20
CPC分类号： C30B23/025 , C30B7/105 , C30B9/10 , C30B23/066 , C30B25/20 , C30B29/403 , C30B29/64 , C30B29/66 , H01L29/2003 , H01L29/32
摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.
摘要翻译：在一个实例中，本发明提供了具有超过1mm厚度的III族氮化物的块状晶体，而不会在晶种的侧面上开裂。这种本体III族氮化物晶体表示为Gax1Aly1In1-x1-y1N（0＆nlE; x1＆nlE; 1,0＆nlE; x1 + y1＆nlE; 1），晶种表示为Gax2Aly2In1-x2-y2N（0＆nlE; x2＆nlE; 1,0＆ x2 + y2＆nlE; 1）。 III族氮化物的块状晶体可以使用具有c取向的基面和m取向的侧壁的至少一种晶种在超临界氨或III族金属的熔体中生长。在这种情况下仅暴露c面和m面，避免了从晶种的侧面产生的裂纹。

2. 发明申请

US20150340444A1 GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD 有权
公开(公告)号：US20150340444A1
公开(公告)日：2015-11-26
申请号：US14720819
申请日：2015-05-24
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO , Edward LETTS
IPC分类号： H01L29/20 , H01L29/32
CPC分类号： C30B23/025 , C30B7/105 , C30B9/10 , C30B23/066 , C30B25/20 , C30B29/403 , C30B29/64 , C30B29/66 , H01L29/2003 , H01L29/32
摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (0≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.

3. 发明申请

US20150337453A1 GROUP III NITRIDE BULK CRYSTALS AND THEIR FABRICATION METHOD 审中-公开
标题翻译：第III组氮化物大块晶体及其制造方法
公开(公告)号：US20150337453A1
公开(公告)日：2015-11-26
申请号：US14720815
申请日：2015-05-24
申请人： SIXPOINT MATERIALS, INC. , SEOUL SEMICONDUCTOR CO., LTD.
发明人： Tadao HASHIMOTO , Edward LETTS
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B23/025 , C30B7/105 , C30B9/10 , C30B23/066 , C30B25/20 , C30B29/403 , C30B29/64 , C30B29/66 , H01L29/2003 , H01L29/32
摘要： In one instance, the invention provides a bulk crystal of group III nitride having a thickness of more than 1 mm without cracking above the sides of a seed crystal. This bulk group III nitride crystal is expressed as Gax1Aly1In1-x1-y1N (≦x1≦1, 0≦x1+y1≦1) and the seed crystal is expressed as Gax2Aly2In1-x2-y2N (0≦x2≦1, 0≦x2+y2≦1). The bulk crystal of group III nitride can be grown in supercritical ammonia or a melt of group III metal using at least one seed crystal having basal planes of c-orientation and sidewalls of m-orientation. By exposing only c-planes and m-planes in this instance, cracks originating from the sides of the seed crystal are avoided.
摘要翻译：在一个实例中，本发明提供了具有超过1mm厚度的III族氮化物的块状晶体，而不会在晶种的侧面上开裂。这种本体III族氮化物晶体表示为Gax1Aly1In1-x1-y1N（＆nlE; x1＆nlE; 1,0＆nlE; x1 + y1＆nlE; 1），晶种表示为Gax2Aly2In1-x2-y2N（0＆nlE; x2＆nlE; 1,0＆ x2 + y2＆nlE; 1）。 III族氮化物的块状晶体可以使用具有c取向的基面和m取向的侧壁的至少一种晶种在超临界氨或III族金属的熔体中生长。在这种情况下仅暴露c面和m面，避免了从晶种的侧面产生的裂纹。

4. 发明申请

US20140054589A1 BISMUTH-DOPED SEMI-INSULATING GROUP III NITRIDE WAFER AND ITS PRODUCTION METHOD 有权
标题翻译：双螺杆半导体半绝缘组III型氮化物及其生产方法
公开(公告)号：US20140054589A1
公开(公告)日：2014-02-27
申请号：US13781543
申请日：2013-02-28
申请人： Seoul Semiconductor Co., Ltd. , SixPoint Materials, Inc.
发明人： Tadao HASHIMOTO , Edward LETTS , Sierra HOFF
IPC分类号： C30B7/10 , B28D5/00 , H01L21/02 , H01L29/20 , H01L29/22
CPC分类号： C30B7/105 , B24B37/042 , B28D5/00 , C30B9/00 , C30B28/04 , C30B29/403 , H01L21/02013 , H01L21/02389 , H01L29/2003 , H01L29/207 , H01L29/22
摘要： The present invention discloses a semi-insulating wafer of GaxAlyIn1-x-yN (0≦x≦1, 0≦x+y≦1) which is doped with bismuth (Bi). The semi-insulating wafer has the resistivity of 104 ohm-cm or more. Although it is very difficult to obtain a single crystal ingot of group III nitride, the ammonothermal method can grow highly-oriented poly or single crystal ingot of group III nitride having the density of dislocations/grain boundaries less than 105 cm−2. The invention also disclose the method of fabricating the semi-insulating group III nitride bulk crystals and wafers.
摘要翻译：本发明公开了掺杂有铋（Bi）的GaxAlyIn1-x-yN（0 @ x @ 1，x @ x + y @ 1）的半绝缘晶片。半绝缘晶片的电阻率为104ohm-cm以上。尽管获得III族氮化物的单晶锭是非常困难的，但是该方法可以生长具有位错密度/晶界小于105cm -2的III族氮化物的高取向聚晶或单晶锭。本发明还公开了制造半绝缘III族氮化物块状晶体和晶片的方法。

5. 发明申请

US20130206057A1 HIGH-PRESSURE VESSEL FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS USING HIGH-PRESSURE VESSEL AND GROUP III NITRIDE CRYSTAL 审中-公开
公开(公告)号：US20130206057A1
公开(公告)日：2013-08-15
申请号：US13784210
申请日：2013-03-04
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao HASHIMOTO , Edward LETTS , Masanori IKARI
IPC分类号： C30B7/10
CPC分类号： C30B7/105 , B32B15/01 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T428/12028
摘要： Present invention discloses a high-pressure vessel of large size formed with a limited size of e.g. Ni—Cr based precipitation hardenable superalloy. Vessel may have multiple zones.For instance, the high-pressure vessel may be divided into at least three regions with flow-restricting devices and the crystallization region is set higher temperature than other regions. This structure helps to reliably seal both ends of the high-pressure vessel, at the same time, may help to greatly reduce unfavorable precipitation of group III nitride at the bottom of the vessel.Invention also discloses novel procedures to grow crystals with improved purity, transparency and structural quality. Alkali metal-containing mineralizers are charged with minimum exposure to oxygen and moisture until the high-pressure vessel is filled with ammonia. Several methods to reduce oxygen contamination during the process steps are presented. Back etching of seed crystals and a new temperature ramping scheme to improve structural quality are disclosed.

6. 发明申请

US20140326175A1 REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF GROWING GROUP III NITRIDE CRYSTALS 审中-公开
标题翻译：用于生长III族氮化物晶体的反应器设计及其生长III族氮化物晶体的方法
公开(公告)号：US20140326175A1
公开(公告)日：2014-11-06
申请号：US14330419
申请日：2014-07-14
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao HASHIMOTO , Masonari IKARI , Edward LETTS
IPC分类号： C30B7/10 , C30B29/40
CPC分类号： C30B7/105 , C30B7/10 , C30B29/403 , C30B29/406 , C30B35/002 , Y10T117/1096
摘要： The present disclosure proves for new design of reactors used for ammonothermal growth of III nitride crystals. The reactors include a region intermediate a source dissolution region and a crystal growth region configured to provide growth of high quality crystals at rates greater than 100 μm/day. In one embodiment, multiple baffle plates having openings whose location is designed so that there is no direct path through the intermediate region, or with multiple baffle plates having differently sized openings on each plate so that the flow is slowed down and/or exhibit greater mixing are described. The disclosed designs enable obtaining high temperature difference between the dissolution region and the crystallization region without decreasing conductance through the device.
摘要翻译：本公开内容证明了用于III族氮化物晶体的氨热生长的反应器的新设计。反应器包括源溶解区域和晶体生长区域之间的区域，晶体生长区域被配置为以大于100μm/天的速率提供高质量晶体的生长。在一个实施例中，具有开口的多个挡板具有位置被设计成使得不存在通过中间区域的直接路径，或者在每个板上具有不同尺寸的开口的多个挡板，使得流动减慢和/或显示更大的混合被描述。所公开的设计使得能够在不降低通过该装置的电导的情况下获得溶解区域和结晶区域之间的高温差。

7. 发明申请

US20140209925A1 METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH 审中-公开
标题翻译：生产改性结晶III族氮化物晶体的方法来自于通过热成型生长的初始III类氮化物
公开(公告)号：US20140209925A1
公开(公告)日：2014-07-31
申请号：US14228628
申请日：2014-03-28
申请人： SIXPOINT MATERIALS, INC.
发明人： Edward LETTS , Tadao HASHIMOTO , Masanori IKARI
IPC分类号： H01L29/20 , H01L21/02
CPC分类号： H01L29/2003 , C30B7/10 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/0254
摘要： The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically, the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device.
摘要翻译：本发明公开了产生更高质量III族氮化物晶片的方法，其然后通过初始缺陷种子的氨热生长产生的锭的结晶特性产生改善。通过从在晶圆上生产的锭的精心选择的区域获得未来的种子，可以提高未来的锭晶体性质。具体来说，如果从破裂的锭块或精心挑选的N极压缩区域的缓解应力区域选择，则将来的种子进行优化。当种子切片时，3-10°的杂交有助于提高连续生长的结构质量。另外，提出了通过使用氨热方法来生产一系列锭子来提高晶体质量的方法，每个锭子使用来自先前锭的特异性取向的种子。当采用这些方法时，这些方法提高了III族氮化物晶片的质量，从而提高了任何随后的器件的效率。

8. 发明申请

US20150075421A1 GROWTH REACTOR FOR GALLIUM-NITRIDE CRYSTALS USING AMMONIA AND HYDROGEN CHLORIDE 有权
标题翻译：使用氨和氯化物的氮化镓晶体的生长反应器
公开(公告)号：US20150075421A1
公开(公告)日：2015-03-19
申请号：US14285350
申请日：2014-05-22
申请人： SIXPOINT MATERIALS, INC.
发明人： Tadao HASHIMOTO , Edward LETTS
IPC分类号： C30B25/08 , C30B29/40 , C30B25/10 , C30B25/14
CPC分类号： C30B25/08 , C23C16/4412 , C30B25/10 , C30B25/14 , C30B29/403 , C30B29/406
摘要： The present invention in one preferred embodiment discloses a new design of HVPE reactor, which can grow gallium nitride for more than one day without interruption. To avoid clogging in the exhaust system, a second reactor chamber is added after a main reactor where GaN is produced. The second reactor chamber may be configured to enhance ammonium chloride formation, and the powder may be collected efficiently in it. To avoid ammonium chloride formation in the main reactor, the connection between the main reactor and the second reaction chamber can be maintained at elevated temperature. In addition, the second reactor chamber may have two or more exhaust lines. If one exhaust line becomes clogged with powder, the valve for an alternative exhaust line may open and the valve for the clogged line may be closed to avoid overpressuring the system. The quartz-made main reactor may have e.g. a pyrolytic boron nitride liner to collect polycrystalline gallium nitride efficiently. The new HVPE reactor which can grow gallium nitride crystals for more than 1 day may produce enough source material for ammonothermal growth. Single crystalline gallium nitride and polycrystalline gallium nitride from the HVPE reactor may be used as seed crystals and a nutrient for ammonothermal group III-nitride growth.
摘要翻译：在一个优选实施方案中，本发明公开了HVPE反应器的新设计，其可以不间断地生长氮化镓一天以上。为了避免在排气系统中堵塞，在生产GaN的主反应器之后加入第二反应器室。第二反应器室可以被配置成增强氯化铵的形成，并且可以有效地将粉末收集在其中。为了避免在主反应器中形成氯化铵，可以将主反应器和第二反应室之间的连接保持在升高的温度。此外，第二反应器室可以具有两个或更多个排气管线。如果一个排气管道被粉末堵塞，则替代排气管路的阀门可能会打开，堵塞管路的阀门可能会被关闭，以避免系统过压。石英制的主反应器可以具有例如一种热解氮化硼衬垫，有效收集多晶氮化镓。可以生长氮化镓晶体超过1天的新的HVPE反应器可以产生足够的用于氨热生长的源材料。来自HVPE反应器的单晶氮化镓和多晶氮化镓可以用作晶种和用于氨热III族氮化物生长的营养物质。

9. 发明申请

US20140174340A1 METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH 有权
标题翻译：生产改性结晶III族氮化物晶体的方法来自于通过热成型生长的初始III类氮化物
公开(公告)号：US20140174340A1
公开(公告)日：2014-06-26
申请号：US14192715
申请日：2014-02-27
申请人： SIXPOINT MATERIALS, INC.
发明人： Edward LETTS , Tadao HASHIMOTO , Masanori IKARI
IPC分类号： C30B7/10
CPC分类号： H01L29/2003 , C30B7/10 , C30B7/105 , C30B29/403 , C30B29/406 , C30B33/00 , H01L21/0254
摘要： The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically the future seeds are optimized if chosen from an area of relieved stress, on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to itnprove structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device.
摘要翻译：本发明公开了产生更高质量III族氮化物晶片的方法，其然后通过初始缺陷种子的氨热生长产生的锭的结晶特性产生改善。通过从在晶圆上生产的锭的精心选择的区域获得未来的种子，可以提高未来的锭晶体性质。具体来说，如果从缓解压力的区域，裂纹块或精心选择的N极压缩区域中选择，未来的种子将被优化。当种子切片时，3-10°的杂交有助于提高连续生长的结构质量。另外，提出了通过使用氨热方法来生产一系列锭子来提高晶体质量的方法，每个锭子使用来自先前锭的特异性取向的种子。当采用这些方法时，这些方法提高了III族氮化物晶片的质量，从而提高了任何随后的器件的效率。

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