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    • 5. 发明授权
    • Semiconductor device
    • 半导体器件
    • US09524124B2
    • 2016-12-20
    • US14523363
    • 2014-10-24
    • SK hynix Inc.
    • Dong-Gun KimYong-Kee KwonHong-Sik Kim
    • G06F12/00G06F3/06
    • G06F3/0688G06F3/0608G06F3/0616G06F3/0638G06F3/0644G06F3/0679
    • A semiconductor device may include a first memory cell array configured to store data according to a first address on a first basis, a second memory cell array configured to store data according to a second address on a second basis that is relatively smaller than the first basis, a memory selector configured to select one of the first memory cell array and the second memory cell array to store data during a write request, and an address map table configured to store mapping information between the first and second addresses for data stored in the second memory cell array.
    • 半导体器件可以包括第一存储器单元阵列,其被配置为在第一基础上存储根据第一地址的数据;第二存储单元阵列,被配置为根据第二地址在第二基础上存储数据,该第二地址相对小于第一基础 配置为在写入请求期间选择第一存储单元阵列和第二存储单元阵列之一以存储数据的存储器选择器,以及地址映射表,被配置为在第一和第二地址之间存储映射信息,以存储在第二存储单元阵列 存储单元阵列。