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1. 发明授权

US11462564B2 Manufacturing method of a semiconductor device 有权
公开(公告)号：US11462564B2
公开(公告)日：2022-10-04
申请号：US17076193
申请日：2020-10-21
申请人： SK hynix Inc.
发明人： In Su Park , Ki Jun Yun , Ki Hong Lee
IPC分类号： H01L27/11582 , H01L27/11565 , H01L21/768 , H01L27/1157 , H01L21/28 , H01L27/11575
摘要： A method of manufacturing a semiconductor device includes forming a first etch stop pattern on a lower structure including a first region and a second region to expose the second region, stacking a plurality of stack structures on the lower structure to overlap the second region and the first etch stop pattern, forming a stepped stack structure by etching the plurality of stack structures to expose an end portion of the first etch stop pattern, forming a slit passing through the stepped stack structure and the first etch stop pattern, and replacing sacrificial layers of the plurality of stack structures and the first etch stop pattern with conductive patterns through the slit.

2. 发明授权

US10910311B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US10910311B2
公开(公告)日：2021-02-02
申请号：US16654787
申请日：2019-10-16
申请人： SK hynix Inc.
发明人： Ki Hong Lee , Ki Hong Yang , Yong Hyun Lim
IPC分类号： H01L23/528 , H01L27/11582 , H01L27/11556
摘要： A semiconductor device includes: a first stack structure; a second stack structure; a slit insulating layer located between the first stack structure and the second stack structure, the slit insulating layer extending in a first direction; a conductive plug located between the first stack structure and the second stack structure, the conductive plug including a first protrusion part protruding to the inside of the slit insulating layer; and an insulating spacer surrounding a sidewall of the conductive plug.

3. 发明授权

US10685914B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US10685914B2
公开(公告)日：2020-06-16
申请号：US15983682
申请日：2018-05-18
申请人： SK hynix Inc.
发明人： Ki Hong Lee
IPC分类号： H01L23/528 , H01L23/532 , H01L23/535 , H01L29/06 , H01L21/768 , H01L21/762 , H01L21/311 , H01L27/24 , H01L45/00 , H01L27/11526 , H01L27/11565 , H01L27/11519 , H01L27/11524 , H01L27/11573 , H01L27/1157 , H01L27/11556 , H01L27/11582
摘要： A semiconductor device includes a wiring structure, a stacked structure located over the wrong structure, channel structures passing through the stacked structure, contact plugs passing through the stacked structure and electrically connected to the wiring structure, and insulating spacers each including loop patterns surrounding a sidewall of each of the contact plugs and stacked along the side all of each of the contact plugs.

4. 发明授权

US10580793B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US10580793B2
公开(公告)日：2020-03-03
申请号：US16151406
申请日：2018-10-04
申请人： SK hynix Inc.
发明人： Ki Hong Lee , Seung Wook Ryu
IPC分类号： H01L29/792 , H01L27/11582 , H01L21/02 , H01L27/11568
摘要： In a method of manufacturing a semiconductor device, the method includes: forming a stack structure; forming a channel layer penetrating the stack structure; forming a first dielectric layer in the channel layer; forming a second dielectric layer in the first dielectric layer; forming an opening by selectively etching the first dielectric layer; selectively etching the second dielectric layer exposed through the opening; and forming a pad in the opening.

5. 发明授权

US10367001B2 3D semiconductor memory device 有权
公开(公告)号：US10367001B2
公开(公告)日：2019-07-30
申请号：US15283961
申请日：2016-10-03
申请人： SK hynix Inc.
发明人： Ki Hong Lee , Seung Ho Pyi , Seok Min Jeon
IPC分类号： H01L27/115 , H01L27/11582 , H01L27/1157 , H01L27/11565
摘要： Provided herein a semiconductor device including a stack including conductive layers and insulating layers that are alternately stacked, and a slit insulating layer passing through the stack in a stacking direction, the slit insulating layer including a first main pattern extending in a first direction, and a first protruding pattern protruding in a second direction crossing the first direction at an end of the first main pattern.

6. 发明授权

US10290651B2 Semiconductor devices with non-overlapping slits in-between memory blocks 有权
公开(公告)号：US10290651B2
公开(公告)日：2019-05-14
申请号：US15937430
申请日：2018-03-27
申请人： SK hynix Inc.
发明人： Ki Hong Lee , Seung Ho Pyi , In Su Park
IPC分类号： H01L27/11582 , H01L23/522 , H01L27/11519 , H01L27/11551 , H01L27/11556 , H01L27/11565 , H01L29/792
摘要： A semiconductor device includes a first conductive layer, at least one first slit through the first conductive layer, and configured to divide the first conductive layer in the unit of a memory block, second conductive layers stacked on the first conductive layer, and a second slit through the second conductive layers at a different location from the first slit and configured to divide the second conductive layers in the unit of the memory block.

7. 发明授权

US09991279B2 Method for manufacturing electronic device using sacrificial layer 有权
公开(公告)号：US09991279B2
公开(公告)日：2018-06-05
申请号：US15398467
申请日：2017-01-04
申请人： SK hynix Inc.
发明人： Ki Hong Lee , Ji Yeon Baek , Seung Ho Pyi
IPC分类号： H01L21/336 , H01L27/11582 , H01L27/1157 , H01L21/768
CPC分类号： H01L27/11582 , H01L21/76898 , H01L27/11565 , H01L27/1157
摘要： A method for manufacturing an electronic device includes forming a first source layer including a trench, forming a first sacrificial layer in the trench, forming a first structure over the first source layer, wherein the first structure includes first material layers and second material layers which are alternately stacked over the each other, forming first openings passing through the first structure and extending to the first sacrificial layer, forming first channel layers in the first openings, forming a slit passing through the first structure and extending to the first sacrificial layer, forming a second opening by removing the first sacrificial layer through the slit, and forming a second source layer in the second opening, wherein the second source layer is coupled to the first channel layers.

8. 发明授权

US09837436B2 Semiconductor device and method of manufacturing the same 有权
公开(公告)号：US09837436B2
公开(公告)日：2017-12-05
申请号：US15462227
申请日：2017-03-17
申请人： SK hynix Inc.
发明人： Ki Hong Lee , Seung Ho Pyi , Jung Yun Chang
IPC分类号： H01L21/311 , H01L21/3213 , H01L27/11582 , H01L29/10 , H01L27/11565 , H01L27/11519 , H01L27/11556
CPC分类号： H01L27/11582 , H01L21/31111 , H01L21/32133 , H01L27/11519 , H01L27/11556 , H01L27/11565 , H01L27/1157 , H01L29/1037 , H01L29/66833 , H01L29/7926
摘要： A semiconductor device includes memory blocks each configured to comprise a pair of channels, each channel including a pipe channel formed in a pipe gate of the memory block and a drain-side channel and a source-side channel coupled to the pipe channel; first slits placed between the memory blocks adjacent to other memory blocks; and a second slit placed between the source-side channel and the drain-side channel of each pair of channels.

9. 发明授权

US09570462B2 Electronic device and method for manufacturing the same 有权
标题翻译：电子设备及其制造方法
公开(公告)号：US09570462B2
公开(公告)日：2017-02-14
申请号：US14732390
申请日：2015-06-05
申请人： SK hynix Inc.
发明人： Ki Hong Lee , Ji Yeon Baek , Seung Ho Pyi
IPC分类号： H01L21/336 , H01L27/115 , H01L21/768
CPC分类号： H01L27/11582 , H01L21/76898 , H01L27/11565 , H01L27/1157
摘要： A method for manufacturing an electronic device includes forming a first source layer including a trench, forming a first sacrificial layer in the trench, forming a first structure over the first source layer, wherein the first structure includes first material layers and second material layers which are alternately stacked over the each other, forming first openings passing through the first structure and extending to the first sacrificial layer, forming first channel layers in the first openings, forming a slit passing through the first structure and extending to the first sacrificial layer, forming a second opening by removing the first sacrificial layer through the slit, and forming a second source layer in the second opening, wherein the second source layer is coupled to the first channel layers.
摘要翻译：一种制造电子器件的方法包括：形成包括沟槽的第一源极层，在沟槽中形成第一牺牲层，在第一源极层上形成第一结构，其中第一结构包括第一材料层和第二材料层，交替地层叠在一起，形成通过第一结构并延伸到第一牺牲层的第一开口，在第一开口中形成第一通道层，形成通过第一结构并延伸到第一牺牲层的狭缝，形成通过从所述狭缝中去除所述第一牺牲层，以及在所述第二开口中形成第二源层，其中所述第二源极层耦合到所述第一沟道层。

10. 发明授权

US09472567B2 Semiconductor device having three-dimensional structure and method of manufacturing the same 有权
标题翻译：具有三维结构的半导体器件及其制造方法
公开(公告)号：US09472567B2
公开(公告)日：2016-10-18
申请号：US14480207
申请日：2014-09-08
申请人： SK hynix Inc.
发明人： Ki Hong Lee , Seung Ho Pyi , Jin Ho Bin
IPC分类号： H01L29/792 , H01L27/115
CPC分类号： H01L27/11582 , H01L21/76843 , H01L21/76849 , H01L21/76877 , H01L27/11553 , H01L27/11556 , H01L27/11565 , H01L27/11573 , H01L27/11575 , H01L27/11578
摘要： A semiconductor device includes a semiconductor pattern; conductive layers each including a first portion through which the semiconductor pattern passes and a second portion having a thickness greater than the first portion, wherein the first portion of each conductive layer includes a first barrier pattern surrounding the semiconductor pattern and a material pattern, which is formed in the first barrier pattern and has an etch selectivity with respect to the first barrier pattern, and the second portion of each conductive layer includes a conductive pattern; and contact plugs connected to the second portion of each of the conductive layers.
摘要翻译：半导体器件包括半导体图案; 导电层各自包括半导体图案通过的第一部分和具有大于第一部分的厚度的第二部分，其中每个导电层的第一部分包括围绕半导体图案的第一阻挡图案和材料图案，其为形成在第一阻挡图案中，并且具有相对于第一阻挡图案的蚀刻选择性，并且每个导电层的第二部分包括导电图案; 以及连接到每个导电层的第二部分的接触插塞。

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