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    • 3. 发明授权
    • Manufacturing method of a graphene-based electrochemical sensor, and electrochemical sensor
    • 基于石墨烯的电化学传感器和电化学传感器的制造方法
    • US09476852B2
    • 2016-10-25
    • US14986132
    • 2015-12-31
    • STMICROELECTRONICS S.R.L.
    • Corrado AccardiStella LoversoSebastiano RavesiNoemi Graziana Sparta
    • H01L21/3205G01N27/414H01L29/66H01L29/16B01L3/00
    • G01N27/414B01L3/502707H01L29/1606H01L29/66H01L29/66053
    • A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.
    • 电化学传感器的制造方法包括在供体基板上形成石墨烯层,在石墨烯层上层叠干燥光致抗蚀剂膜,去除供体基板以获得包含干燥光致抗蚀剂和石墨烯层的膜的中间结构,以及层压 所述中间结构位于最后的基底上,所述石墨烯层与位于最终基底上的第一和第二电极电接触。 然后将干燥光致抗蚀剂的膜图案化以在石墨烯层上形成微流体结构,并且在结构上层叠另外的干燥光致抗蚀剂层。 在通过该方法制造的一种类型的传感器中,石墨烯层用作场效应晶体管的沟道区,其导电特性根据引入微流体结构的分析物的特性而变化。
    • 8. 发明申请
    • MANUFACTURING METHOD OF A GRAPHENE-BASED ELECTROCHEMICAL SENSOR, AND ELECTROCHEMICAL SENSOR
    • 基于石墨的电化学传感器和电化学传感器的制造方法
    • US20130334579A1
    • 2013-12-19
    • US13917379
    • 2013-06-13
    • STMicroelectronics S.r.l.
    • Corrado AccardiStella LoversoSebastiano RavesiNoemi Graziana Sparta
    • H01L29/66
    • G01N27/414B01L3/502707H01L29/1606H01L29/66H01L29/66053
    • A manufacturing method of an electrochemical sensor comprises forming a graphene layer on a donor substrate, laminating a film of dry photoresist on the graphene layer, removing the donor substrate to obtain an intermediate structure comprising the film of dry photoresist and the graphene layer, and laminating the intermediate structure onto a final substrate with the graphene layer in electrical contact with first and second electrodes positioned on the final substrate. The film of dry photoresist is then patterned to form a microfluidic structure on the graphene layer and an additional dry photoresist layer is laminated over the structure. In one type of sensor manufactured by this process, the graphene layer acts as a channel region of a field-effect transistor, whose conductive properties vary according to characteristics of an analyte introduced into the microfluidic structure.
    • 电化学传感器的制造方法包括在供体基板上形成石墨烯层,在石墨烯层上层叠干燥光致抗蚀剂膜,去除供体基板以获得包含干燥光致抗蚀剂和石墨烯层的膜的中间结构,以及层压 所述中间结构位于最后的基底上,所述石墨烯层与位于最终基底上的第一和第二电极电接触。 然后将干燥光致抗蚀剂的膜图案化以在石墨烯层上形成微流体结构,并且在结构上层叠另外的干燥光致抗蚀剂层。 在通过该方法制造的一种类型的传感器中,石墨烯层用作场效应晶体管的沟道区,其导电特性根据引入微流体结构的分析物的特性而变化。