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1. 发明申请

US20190003884A1 LIGHT RECEIVING DEVICE, METHOD FOR FABRICATING LIGHT RECEIVING DEVICE 审中-公开
公开(公告)号：US20190003884A1
公开(公告)日：2019-01-03
申请号：US16026476
申请日：2018-07-03
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takamitsu KITAMURA , Hideki Yagi
IPC分类号： G01J1/44 , G02B6/43 , G01J1/42 , H01L31/0232 , H01L31/0352 , H01L31/0304 , H01L31/109 , H01L31/18
摘要： A method for fabricating a light receiving device includes: preparing a first substrate product which includes a semiconductor region having a common semiconductor layer, a first semiconductor laminate for a photodiode, a second semiconductor laminate for a waveguide, and a butt-joint between the first semiconductor laminate and the second semiconductor laminate, the first laminate and the second semiconductor laminate being disposed on the common semiconductor layer; etching the first substrate product with a first mask to form a second substrate product having a photodiode mesa structure produced from the first semiconductor laminate and a preliminary mesa structure produced from the second semiconductor laminate; etching the second substrate product with the first mask and a second mask, formed on the photodiode mesa structure; to produce a waveguide mesa structure from the preliminary mesa structure, and the waveguide mesa structure having a height larger than that of the preliminary mesa structure.

2. 发明授权

US09366835B2 Integrated optical semiconductor device and integrated optical semiconductor device assembly 有权
标题翻译：集成光半导体器件和集成光半导体器件组件
公开(公告)号：US09366835B2
公开(公告)日：2016-06-14
申请号：US14643951
申请日：2015-03-10
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Ryuji Masuyama , Yoshihiro Yoneda , Hideki Yagi , Naoko Konishi
IPC分类号： G02B6/12 , G02B6/42 , G02B6/122
CPC分类号： G02B6/4274 , G02B6/12004 , G02B6/122 , G02B6/131 , G02B6/136 , G02B6/2813 , G02B6/4204 , G02B6/428 , G02B6/4295
摘要： An integrated optical semiconductor device includes a substrate including first and second regions; a plurality of light receiving devices disposed in the second region; a multimode interference coupler disposed in the first region, the multimode interference coupler including output optical waveguides optically coupled to the corresponding light receiving devices; first and second conductive layers disposed on a back surface of the substrate in the first and second regions, respectively; and a plurality of capacitors disposed in the second region, each of the capacitors including a first electrode connected to one of the light receiving devices and a second electrode connected to the second conductive layer. The second conductive layer is electrically insulated from the first conductive layer. The substrate is made of a semi-insulating semiconductor. The multimode interference coupler and the light receiving devices include the same n-type semiconductor layer disposed on a principal surface of the substrate.
摘要翻译：一种集成光学半导体器件，包括：包括第一和第二区域的衬底; 设置在所述第二区域中的多个光接收装置; 设置在所述第一区域中的多模干涉耦合器，所述多模干涉耦合器包括光耦合到相应的光接收装置的输出光波导; 分别设置在第一和第二区域中的基板的背面上的第一和第二导电层; 以及设置在第二区域中的多个电容器，每个电容器包括连接到一个光接收装置的第一电极和连接到第二导电层的第二电极。第二导电层与第一导电层电绝缘。基板由半绝缘半导体制成。多模干涉耦合器和光接收装置包括设置在基板的主表面上的相同的n型半导体层。

3. 发明授权

US09176360B2 Method for producing spot-size convertor 有权
标题翻译：生产点尺寸转换器的方法
公开(公告)号：US09176360B2
公开(公告)日：2015-11-03
申请号：US14331762
申请日：2014-07-15
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hideki Yagi , Naoko Konishi , Takamitsu Kitamura , Naoya Kono
IPC分类号： H01L21/00 , G02F1/225 , G02B6/122 , G02F1/21
CPC分类号： G02F1/2257 , G02B6/1228 , G02F2001/212 , G02F2001/217
摘要： A method for producing a spot-size convertor includes the steps of preparing a substrate; forming a stacked semiconductor layer including first and second core layers on the substrate; forming a mesa structure by etching the stacked semiconductor layer using a first mask, the mesa structure including a side surface and a bottom portion of the first core layer; forming a protective mask covering the side surface; etching the bottom portion using the protective mask to form a top mesa; and forming a bottom mesa by etching the second core layer using a second mask. The top mesa includes the first core layer and a portion having a mesa width gradually reduced in a first direction of a waveguide axis. The bottom mesa includes the second core layer and a portion having a mesa width gradually reduced in a second direction opposite to the first direction.
摘要翻译：一种点尺寸转换器的制造方法包括准备基板的工序; 在所述基板上形成包括第一和第二芯层的层叠半导体层; 通过使用第一掩模蚀刻所述堆叠半导体层来形成台面结构，所述台面结构包括所述第一芯层的侧表面和底部; 形成覆盖所述侧面的保护罩; 使用防护罩蚀刻底部以形成顶部台面; 以及通过使用第二掩模蚀刻所述第二芯层来形成底台面。顶部台面包括第一芯层和沿波导轴的第一方向逐渐减小的台面宽度的部分。底部台面包括第二芯层和在与第一方向相反的第二方向上逐渐减小的台面宽度的部分。

4. 发明授权

US08986553B2 Method for manufacturing optical semiconductor device 有权
标题翻译：光半导体器件的制造方法
公开(公告)号：US08986553B2
公开(公告)日：2015-03-24
申请号：US13935704
申请日：2013-07-05
申请人： Sumitomo Electric Industries, Ltd.
发明人： Takamitsu Kitamura , Hideki Yagi
IPC分类号： B29D11/00 , G02F1/225 , G02F1/21
CPC分类号： B29D11/00673 , G02F1/2257 , G02F2001/212
摘要： A method for manufacturing an optical semiconductor device includes the steps of preparing a substrate product including a semiconductor layer, a mesa structure, and a protective layer; forming a buried layer composed of a resin on the substrate product; forming a first opening in the buried layer on the mesa structure; forming a second opening in the buried layer on the semiconductor layer; exposing the mesa structure and the semiconductor layer by etching the protective layer; forming a first electrode in the first opening; and forming a second electrode in the second opening. The step of forming the second opening includes a first etching step including etching the buried layer using a first resist mask for forming a recess and a second etching step including etching the buried layer using a second resist mask having an opening pattern which has an opening width not smaller than that of the recess.
摘要翻译：一种光半导体装置的制造方法，其特征在于，包括：准备包括半导体层，台面结构和保护层的基板制品的工序; 在所述基板产品上形成由树脂构成的掩埋层; 在台面结构的埋层中形成第一开口; 在所述半导体层上的所述掩埋层中形成第二开口; 通过蚀刻保护层来暴露台面结构和半导体层; 在第一开口中形成第一电极; 以及在所述第二开口中形成第二电极。形成第二开口的步骤包括：第一蚀刻步骤，包括使用用于形成凹部的第一抗蚀剂掩模蚀刻掩埋层;以及第二蚀刻步骤，包括使用具有开口图案的第二抗蚀剂掩模蚀刻所述掩埋层，所述第二抗蚀剂掩模具有开口宽度不小于休息区。

5. 发明授权

US08811444B2 Semiconductor integrated device and method for producing the same 有权
标题翻译：半导体集成器件及其制造方法
公开(公告)号：US08811444B2
公开(公告)日：2014-08-19
申请号：US13733264
申请日：2013-01-03
申请人： Sumitomo Electric Industries, Ltd.
发明人： Hideki Yagi
IPC分类号： H01S3/10 , H01S3/20 , H01S5/00
CPC分类号： H01S5/3013 , B82Y20/00 , G02B6/12004 , H01S5/026 , H01S5/0265 , H01S5/1017 , H01S5/1032 , H01S5/12 , H01S5/2213 , H01S5/2224 , H01S5/2275 , H01S5/3213 , H01S5/34306
摘要： A semiconductor integrated device includes a light-emitting portion including a first lower mesa, a first lower buried layer provided on a side surface of the first lower mesa, a first upper mesa provided above the first lower mesa, and a first upper buried layer provided on a side surface of the first upper mesa; and an optical modulator portion including a second lower mesa, a second lower buried layer provided on a side surface of the second lower mesa, a second upper mesa provided above the second lower mesa, and a second upper buried layer provided on a side surface of the second upper mesa. The first and second lower mesas include first and second core layers optically coupled to each other. The first and second lower buried layers are composed of a semi-insulating semiconductor. The first and second upper buried layers are composed of a resin material.
摘要翻译：半导体集成器件包括：第一下台面的发光部，设置在第一下台面的侧面的第一下掩埋层，设置在第一下台面的第一上台面;以及第一上掩埋层，在第一上台面的侧面上; 以及包括第二下台面的光调制器部分，设置在第二下台面的侧表面上的第二下掩埋层，设置在第二下台面上方的第二上台面，以及设置在第二下台面的侧表面上的第二上掩埋层第二个上部台面第一和第二下台面包括彼此光耦合的第一和第二芯层。第一和第二下埋层由半绝缘半导体构成。第一和第二上埋层由树脂材料构成。

6. 发明授权

US11621538B2 Wavelength tunable laser device and method for manufacturing the same 有权
公开(公告)号：US11621538B2
公开(公告)日：2023-04-04
申请号：US17030628
申请日：2020-09-24
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hideki Yagi
IPC分类号： H01S5/026 , H01S5/02 , H01S5/12 , H01S5/10 , H01S5/343
摘要： A wavelength tunable laser device includes a substrate including silicon, the substrate having a waveguide, a first semiconductor element bonded to the substrate, the first semiconductor element including an active layer of a group III-V compound semiconductor, and a second semiconductor element bonded to the substrate, the second semiconductor element facing to the first semiconductor element in a direction along which light emitted from the first semiconductor element propagates, the second semiconductor element including a grating formed of a group III-V compound semiconductor. The grating selects a wavelength of light.

7. 发明授权

US10545285B2 Hybrid optical assembly and method for fabricating same 有权
公开(公告)号：US10545285B2
公开(公告)日：2020-01-28
申请号：US16271327
申请日：2019-02-08
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hideki Yagi , Naoko Konishi
IPC分类号： G02B6/12 , G02B6/132 , H01S5/22 , G02B6/13 , G02B6/136 , H01S5/343
摘要： A hybrid optical assembly includes: a photonic device having a waveguide structure including group IV semiconductor and oxide; and an optical source device including group III-V semiconductor. The source device is bonded to the photonic device. The source device and the waveguide structure are arranged in a direction of a first axis. The source device has a first semiconductor mesa including an upper core layer and a first upper cladding layer and a second semiconductor mesa including a lower core layer and a second upper cladding layer. The first and second semiconductor mesas extend in a direction of a second axis intersecting the first axis. The second semiconductor mesa has a length larger than that of the first semiconductor mesa. The lower core layer, the second upper cladding layer, and the upper core layer and the first upper cladding layer are arranged in the direction of the first axis.

8. 发明授权

US09696496B2 Semiconductor optical device and semiconductor assembly 有权
公开(公告)号：US09696496B2
公开(公告)日：2017-07-04
申请号：US15341316
申请日：2016-11-02
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Ryuji Masuyama , Yoshihiro Yoneda , Hideki Yagi , Kenji Sakurai , Takehiko Kikuchi
IPC分类号： G02B6/12 , G02B6/293 , H01L31/0232 , H01L31/0304 , H01L31/109 , H01L31/02 , H01L31/18
CPC分类号： G02B6/29344 , G02B6/12004 , H01L31/02005 , H01L31/02327 , H01L31/03046 , H01L31/105 , H01L31/109 , H01L31/1844
摘要： A semiconductor optical device includes a semiconductor substrate having first to fourth regions, a 90-degree optical hybrid provided in the third region on a principal surface of the semiconductor substrate, first and second waveguides provided in the first region and being optically coupled to the 90-degree optical hybrid, a photodiode provided in the fourth region, a third waveguide provided in the second region to optically couple the 90-degree optical hybrid to the photodiode, and a metal layer provided on a back surface of the semiconductor substrate. The metal layer includes a first part provided in the first region and a second part provided in the second region that is spaced apart from the first part by a distance. The 90-degree optical hybrid has a first length. The distance between the first and second parts is more than or equal to the first length.

9. 发明授权

US09482834B2 Semiconductor optical device and method for producing semiconductor optical device 有权
标题翻译：半导体光学器件及半导体光学器件的制造方法
公开(公告)号：US09482834B2
公开(公告)日：2016-11-01
申请号：US14627885
申请日：2015-02-20
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takehiko Kikuchi , Hideki Yagi , Yoshihiro Yoneda
IPC分类号： G02B6/30 , G02B6/12 , G02B6/44 , H01L31/0232 , H01L21/00 , G02B6/42 , H01L31/0352 , H01L31/105 , H01L31/18
CPC分类号： G02B6/4295 , H01L31/035281 , H01L31/105 , H01L31/184 , H01L2924/30105 , Y02E10/50
摘要： A semiconductor optical device includes a substrate including first and second regions arranged in a first direction, a photodiode disposed on the first region, an optical waveguide disposed on the second region, and a buried layer disposed on a side surface of the photodiode. The side surface of the photodiode extends in the first direction. The photodiode has a first end surface intersecting with the first direction, and the optical waveguide is in direct contact with the first end surface. The buried layer is composed of a III-V compound semiconductor doped with a transition metal. The photodiode includes a stacked semiconductor layer including a first cladding layer, a light-absorbing layer and a second cladding layer stacked in that order on the substrate. The light-absorbing layer has a side surface having at least a portion recessed with respect to a side surface of the first cladding layer.
摘要翻译：半导体光学器件包括：基板，包括沿第一方向布置的第一和第二区域;布置在第一区域上的光电二极管;设置在第二区域上的光波导;以及设置在光电二极管的侧表面上的掩埋层。光电二极管的侧表面沿第一方向延伸。光电二极管具有与第一方向相交的第一端面，并且光波导与第一端面直接接触。掩埋层由掺杂有过渡金属的III-V族化合物半导体构成。光电二极管包括在基板上依次层叠的第一包层，光吸收层和第二包层的堆叠半导体层。光吸收层具有相对于第一包层的侧表面凹陷的至少一部分的侧表面。

10. 发明授权

US09103976B2 Method for manufacturing waveguide-type semiconductor device 有权
标题翻译：波导型半导体器件的制造方法
公开(公告)号：US09103976B2
公开(公告)日：2015-08-11
申请号：US14280043
申请日：2014-05-16
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Ryuji Masuyama , Yoshihiro Yoneda , Hideki Yagi , Naoko Konishi
IPC分类号： H01L21/00 , G02B6/13 , G02B6/12
CPC分类号： G02B6/131 , G02B2006/12173 , G02B2006/12178
摘要： A method for manufacturing a waveguide-type semiconductor device includes the steps of forming an epitaxial structure including a waveguide mesa and a device mesa; forming a mask for selective growth on the epitaxial structure; growing a semiconductor region on an end surface of the device mesa by using the mask for selective growth, the semiconductor region including a side portion having a layer shape and a protruding wall portion; forming an ohmic electrode on a top surface of the device mesa; forming a resin layer on the device mesa and the semiconductor region; forming a resin mask having an opening on the ohmic electrode; forming an electric conductor connecting the ohmic electrode to an electrode pad, the electric conductor passing over the protruding wall portion while making contact with a surface of the resin mask; and removing the resin mask after forming the electric conductor.
摘要翻译：制造波导型半导体器件的方法包括以下步骤：形成包括波导台面和器件台面的外延结构; 在外延结构上形成用于选择性生长的掩模; 通过使用用于选择性生长的掩模在器件台面的端面上生长半导体区域，该半导体区域包括具有层状的侧部和突出的壁部; 在器件台面的顶表面上形成欧姆电极; 在器件台面和半导体区域上形成树脂层; 形成在所述欧姆电极上具有开口的树脂掩模; 形成将所述欧姆电极与电极焊盘连接的电导体，所述电导体在与所述树脂掩模的表面接触的同时越过所述突出壁部; 并在形成电导体之后去除树脂掩模。

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