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1. 发明授权

US09638980B2 Modulator and production method thereof 有权
公开(公告)号：US09638980B2
公开(公告)日：2017-05-02
申请号：US14805142
申请日：2015-07-21
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hideki Yagi , Hirohiko Kobayashi , Naoya Kono , Takamitsu Kitamura
IPC分类号： G02F1/225 , G02F1/025 , G02F1/21
CPC分类号： G02F1/2255 , G02F1/025 , G02F2001/212 , G02F2201/12
摘要： A modulator including: a Mach-Zehnder modulator that includes an optical waveguide disposed on a substrate, the optical waveguide including an electrode thereon; a resin layer disposed on the substrate, the resin layer embedding the optical waveguide, the resin layer having a groove arranged besides the optical waveguide; a termination resistor disposed on the substrate in the groove of the resin layer; and a first wiring disposed on the resin layer, the first wiring being connected to the termination resistor and the electrode of the optical waveguide.

2. 发明授权

US09261649B2 Method for manufacturing semiconductor optical waveguide device, and semiconductor optical waveguide device 有权
标题翻译：半导体光波导器件的制造方法以及半导体光波导器件
公开(公告)号：US09261649B2
公开(公告)日：2016-02-16
申请号：US14657781
申请日：2015-03-13
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takamitsu Kitamura , Hideki Yagi , Naoya Kono
IPC分类号： G02B6/02 , G02B6/136 , G06Q20/20 , G02B6/122 , G02B6/12
CPC分类号： G02B6/136 , G02B6/1228 , G02B2006/12173
摘要： A method for manufacturing a semiconductor optical waveguide device includes the steps of forming a waveguide mesa having first and second portions by etching a stacked semiconductor layer through a first mask; forming a dummy buried region embedding a top surface and side surfaces of the waveguide mesa; forming a second mask on the dummy buried region, the second mask having an opening on the first portion and having a pattern on the second portion; forming a third mask having an opening that reaches a top surface of the first portion, the third mask including a dummy buried mask formed by etching the dummy buried region through the second mask; forming an upper mesa by etching the waveguide mesa through the third mask; and after removing the third mask, forming a lower mesa by etching the stacked semiconductor layer, the lower mesa having a greater width than that of the upper mesa.
摘要翻译：一种制造半导体光波导器件的方法包括以下步骤：通过第一掩模蚀刻堆叠的半导体层来形成具有第一和第二部分的波导台面; 形成嵌入波导台面的顶面和侧面的虚拟埋入区域; 在所述伪掩埋区域上形成第二掩模，所述第二掩模在所述第一部分上具有开口，并且在所述第二部分上具有图案; 形成具有到达所述第一部分的顶表面的开口的第三掩模，所述第三掩模包括通过所述第二掩模蚀刻所述伪掩埋区域而形成的伪掩模掩模; 通过蚀刻波导台面通过第三掩模形成上台面; 并且在去除第三掩模之后，通过蚀刻堆叠的半导体层形成下台面，下台面的宽度大于上台面的宽度。

3. 发明授权

US10475669B2 Method for fabricating Mach-Zehnder modulator, Mach-Zehnder modulator 有权
公开(公告)号：US10475669B2
公开(公告)日：2019-11-12
申请号：US15880316
申请日：2018-01-25
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takamitsu Kitamura
IPC分类号： H01L21/56 , G02F1/225 , H01L21/283 , G02F1/21
摘要： A method for fabricating a Mach-Zehnder modulator includes: forming a resin body embedding a semiconductor mesa for an arm waveguide, the resin body having an opening on an upper face of the semiconductor mesa; forming an electrode on the semiconductor mesa and the resin body, the electrode being in contact with the upper face of the semiconductor mesa through the opening of the resin body; forming an inorganic insulating protective layer on the electrode and the resin body, the inorganic insulating protective layer having an arrangement of multiple first openings therethrough to the electrode; and forming a metal body on the inorganic insulating protective layer and the electrode, the metal body being in contact with the electrode through the multiple first openings of the inorganic insulating protective layer.

4. 发明授权

US08986560B2 Method for producing optical semiconductor device 有权
标题翻译：光半导体器件的制造方法
公开(公告)号：US08986560B2
公开(公告)日：2015-03-24
申请号：US14057146
申请日：2013-10-18
申请人： Sumitomo Electric Industries, Ltd.
发明人： Takamitsu Kitamura , Hideki Yagi
IPC分类号： B29D11/00 , G02F1/225 , G02F1/025
CPC分类号： G02F1/2257 , G02B6/136 , G02B2006/121 , G02B2006/12173 , G02F1/025 , G02F2001/212 , G06F17/5068 , H01L21/31116 , H01L22/12 , H01L22/20 , H01L33/44
摘要： A method for producing an optical semiconductor device includes the steps of determining a wafer size to make a section arrangement including a plurality of sections in each of which the optical semiconductor device including a semiconductor mesa is formed; obtaining an in-plane distribution of a thickness of a resin layer on a wafer; obtaining a correlation between a thickness of a resin layer and a trench width; forming a trench width map using the in-plane distribution of the thickness and the correlation; preparing an epitaxial substrate by forming a stacked semiconductor layer; forming, on the epitaxial substrate, a mask based on the trench width map; forming a trench structure including the semiconductor mesa by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer.
摘要翻译：一种光半导体装置的制造方法，其特征在于，包括：确定晶片尺寸，形成包括形成有半导体台面的光半导体装置的多个部分的部分布置的步骤; 获得晶片上的树脂层的厚度的平面内分布; 获得树脂层的厚度和沟槽宽度之间的相关性; 使用厚度的面内分布和相关性形成沟槽宽度图; 通过形成堆叠的半导体层制备外延衬底; 在所述外延衬底上形成基于所述沟槽宽度图的掩模; 通过使用掩模蚀刻堆叠的半导体层来形成包括半导体台面的沟槽结构; 在沟槽结构上形成树脂层; 并通过蚀刻树脂层在半导体台面上形成开口。

5. 发明授权

US10185204B2 Mach-Zehnder modulator, method for fabricating Mach-Zehnder modulator 有权
公开(公告)号：US10185204B2
公开(公告)日：2019-01-22
申请号：US15476365
申请日：2017-03-31
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroaki Goto , Takamitsu Kitamura
IPC分类号： G02F1/225 , G02F1/21
摘要： A Mach-Zehnder modulator includes: a semiconductor structure having a first waveguide portion, a second waveguide portion, and a third waveguide portion, which are disposed on the first area, the second area, and the third area of a principal surface of substrate, respectively; an embedding resin body having an opening on the first waveguide portion; an ohmic electrode including a first ohmic electrode portion connected to the first waveguide portion through the opening of the embedding resin body, and a second ohmic electrode portion disposed on the embedding resin body in the second area; and a conductor including a first conductive portion extending along the first ohmic electrode portion, and a second conductive portion disposed on the embedding resin body and having a width greater than that of the second ohmic electrode portion, the embedding resin body having a groove extending along an edge of the second ohmic electrode portion.

6. 发明授权

US09523871B2 Semiconductor optical modulator and method for manufacturing semiconductor optical modulator 有权
标题翻译：半导体光调制器及制造半导体光调制器的方法
公开(公告)号：US09523871B2
公开(公告)日：2016-12-20
申请号：US14796770
申请日：2015-07-10
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takamitsu Kitamura , Hideki Yagi , Daisuke Kimura , Hirohiko Kobayashi , Masataka Watanabe
IPC分类号： G02F1/025 , G02F1/21 , G02F1/225
CPC分类号： G02F1/025 , G02F1/218 , G02F1/2255
摘要： A semiconductor optical modulator includes a substrate having a principal surface; a waveguide disposed on the principal surface of the substrate, the waveguide extending in a first direction; a first electrode disposed on the waveguide, the first electrode being in contact with an upper surface of the waveguide; a first wiring connected to the first electrode, the first wiring extending in a second direction intersecting the first direction; a build-up portion connected to the first wiring; a second wiring connected to the build-up portion, the second wiring extending in a plane parallel to the principal surface of the substrate; and a resin layer disposed on the substrate, the resin layer embedding the first wiring and the build-up portion. The build-up portion extends along a third direction, the third direction intersecting perpendicularly to the principal surface of the substrate. The second wiring is disposed on the resin layer.
摘要翻译：半导体光调制器包括具有主表面的基板; 布置在所述基板的主表面上的波导，所述波导沿第一方向延伸; 设置在所述波导上的第一电极，所述第一电极与所述波导的上表面接触; 连接到所述第一电极的第一布线，所述第一布线沿与所述第一方向相交的第二方向延伸; 连接到第一布线的积聚部分; 连接到所述积聚部分的第二布线，所述第二布线在平行于所述基板的主表面的平面中延伸; 以及设置在基板上的树脂层，树脂层嵌入第一布线和积层部。堆积部分沿着第三方向延伸，第三方向垂直于衬底的主表面相交。第二布线设置在树脂层上。

7. 发明授权

US09329451B2 Method for producing optical semiconductor device 有权
标题翻译：光半导体器件的制造方法
公开(公告)号：US09329451B2
公开(公告)日：2016-05-03
申请号：US14605578
申请日：2015-01-26
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takamitsu Kitamura , Hideki Yagi
IPC分类号： H01L21/302 , G02F1/225 , G06F17/50 , H01L21/66 , H01L21/311 , H01L33/44 , G02F1/025 , G02B6/136 , G02B6/12 , G02F1/21
CPC分类号： G02F1/2257 , G02B6/136 , G02B2006/121 , G02B2006/12173 , G02F1/025 , G02F2001/212 , G06F17/5068 , H01L21/31116 , H01L22/12 , H01L22/20 , H01L33/44
摘要： A method for producing optical semiconductor devices includes: forming a stacked semiconductor layer on a device substrate to provide an epitaxial substrate having a size corresponding to a section arrangement; forming, on the epitaxial substrate, a mask having a pattern for a semiconductor mesa and for a trench of at least one optical semiconductor device, a width of the trench in the pattern being determined according to a trench width map in which trench width is based upon an in-plane distribution of the thickness of a resin layer of the at least one device, and upon a correlation between the thickness of the resin layer and the trench width; forming a trench structure including the semiconductor mesa and the trench by etching the stacked semiconductor layer using the mask; forming a resin layer on the trench structure; and forming an opening on the semiconductor mesa by etching the resin layer.
摘要翻译：一种用于制造光学半导体器件的方法包括：在器件衬底上形成堆叠的半导体层以提供具有对应于部分布置的尺寸的外延衬底; 在所述外延衬底上形成具有用于半导体台面的图案和至少一个光学半导体器件的沟槽的掩模，所述图案中的沟槽的宽度根据沟槽宽度基于的沟槽宽度图确定在所述至少一个装置的树脂层的厚度的面内分布中，以及所述树脂层的厚度和所述沟槽宽度之间的相关性; 通过使用掩模蚀刻堆叠的半导体层来形成包括半导体台面和沟槽的沟槽结构; 在沟槽结构上形成树脂层; 并通过蚀刻树脂层在半导体台面上形成开口。

8. 发明申请

US20160026063A1 MODULATOR AND PRODUCTION METHOD THEREOF 有权
标题翻译：调制器及其生产方法
公开(公告)号：US20160026063A1
公开(公告)日：2016-01-28
申请号：US14805142
申请日：2015-07-21
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hideki YAGI , Hirohiko Kobayashi , Naoya Kono , Takamitsu Kitamura
IPC分类号： G02F1/21 , G02F1/01 , G02F1/225
CPC分类号： G02F1/2255 , G02F1/025 , G02F2001/212 , G02F2201/12
摘要： A modulator including: a Mach-Zehnder modulator that includes an optical waveguide disposed on a substrate, the optical waveguide including an electrode thereon; a resin layer disposed on the substrate, the resin layer embedding the optical waveguide, the resin layer having a groove arranged besides the optical waveguide; a termination resistor disposed on the substrate in the groove of the resin layer; and a first wiring disposed on the resin layer, the first wiring being connected to the termination resistor and the electrode of the optical waveguide.
摘要翻译：一种调制器，包括：马赫 - 曾德调制器，其包括设置在基板上的光波导，所述光波导在其上包括电极; 设置在基板上的树脂层，树脂层嵌入光波导，树脂层具有布置在光波导之外的凹槽; 终端电阻器，设置在树脂层的沟槽中的基板上; 以及布置在所述树脂层上的第一布线，所述第一布线连接到所述终端电阻器和所述光波导的电极。

9. 发明授权

US10901290B2 Method for fabricating Mach-Zehnder modulator, Mach-Zehnder modulator 有权
公开(公告)号：US10901290B2
公开(公告)日：2021-01-26
申请号：US16502098
申请日：2019-07-03
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takamitsu Kitamura
IPC分类号： G02F1/225 , G02F1/21
摘要： A method for fabricating a Mach-Zehnder modulator includes: preparing a substrate product having a waveguide mesa, an embedding resin body and an inorganic insulator, the waveguide mesa being disposed on a supporting base, the inorganic insulator covering the embedding resin body to separate the embedding resin body from the waveguide mesa, the waveguide mesa having top and side faces covered with the inorganic insulator, and the embedding resin body embedding the side face of the waveguide mesa; forming an opening in the inorganic insulator by etching to form an inorganic insulating region, the opening reaching the top face of the waveguide mesa, the inorganic insulating region covering the embedding resin body and the side face of the inorganic insulator; and forming an ohmic electrode in the opening to make contact with the top face of the mesa, the inorganic insulating region separating the ohmic electrode from the embedding resin body.

10. 发明授权

US10248000B2 Semiconductor optical element and method for manufacturing the same 有权
公开(公告)号：US10248000B2
公开(公告)日：2019-04-02
申请号：US15914826
申请日：2018-03-07
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Takamitsu Kitamura , Masataka Watanabe
IPC分类号： G02F1/225 , H01S5/026 , G02F1/025 , H01S5/12 , H01S5/227 , H01L23/00 , H01L21/768 , H01S5/042
摘要： A semiconductor optical element is disclosed. The semiconductor optical element includes: a mesa-shaped optical waveguide formed on a substrate; a modulation electrode formed on the optical waveguide; a first resin layer that buries side surfaces of the optical waveguide; a bonding pad formed on the first resin layer; and a connecting wiring line that connects the modulation electrode and the bonding pad. In the semiconductor optical element, side surfaces of the bonding pad are partially covered with a second resin layer provided on the first resin layer, and the connecting wiring line extends on the second resin layer.

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