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1. 发明授权

US10554022B2 Quantum cascade laser 有权
公开(公告)号：US10554022B2
公开(公告)日：2020-02-04
申请号：US16011818
申请日：2018-06-19
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/34 , H01S5/026 , H01S5/343 , H01S5/12 , H01S5/028 , H01S5/042 , H01S5/022
摘要： A quantum cascade laser includes: a substrate including a substrate end face; a semiconductor laminate having a laminate end face and a core extending in an axial direction; a first electrode disposed on the semiconductor laminate; a second electrode disposed on a back surface of the substrate; an insulating film disposed on the laminate end face and the first electrode; and a first metal film disposed on the laminate end face, the insulating film and the first electrode, the insulating film being between the first metal film and the semiconductor laminate. The substrate end face and the laminate end face extend along a reference plane intersecting the axial direction. The substrate end face has a first area and a second area arranged in a direction from the back surface to a principal surface of the substrate, and the first metal film has an end on the second area.

2. 发明申请

US20180375292A1 QUANTUM CASCADE LASER 审中-公开
公开(公告)号：US20180375292A1
公开(公告)日：2018-12-27
申请号：US16011928
申请日：2018-06-19
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/34 , H01S5/227 , H01S5/343 , H01S5/022 , H01S5/028
CPC分类号： H01S5/3401 , H01S5/0201 , H01S5/0202 , H01S5/02208 , H01S5/02268 , H01S5/02272 , H01S5/028 , H01S5/0282 , H01S5/0425 , H01S5/12 , H01S5/2224 , H01S5/227 , H01S5/2275 , H01S5/3402 , H01S5/343 , H01S5/4031 , H01S2301/176
摘要： A quantum cascade laser includes: a semiconductor substrate including principal and back surfaces; a semiconductor laminate having a laminate end face, the laminate end face and, the substrate end face extending along a reference plane intersecting a second direction that intersects the first direction; a first electrode disposed on the semiconductor laminate, the semiconductor laminate being disposed between the first electrode and the semiconductor substrate; a second electrode disposed on the back surface; a first insulating film disposed on the laminate end face, the substrate end face, and the first electrode; a metal film disposed on the first insulating film and the laminate end face, the substrate end face, and the first electrode; and a second insulating film disposed on the second electrode, and on the substrate end face, the metal film being disposed between the first insulating film and the second insulating film.

3. 发明授权

US09595811B2 Quantum cascade semiconductor laser 有权
标题翻译：量子级联半导体激光器
公开(公告)号：US09595811B2
公开(公告)日：2017-03-14
申请号：US15088600
申请日：2016-04-01
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/22 , H01S5/227 , H01S5/34
CPC分类号： H01S5/227 , H01S5/0224 , H01S5/02461 , H01S5/125 , H01S5/2214 , H01S5/2224 , H01S5/2275 , H01S5/3402
摘要： A quantum cascade semiconductor laser includes a substrate and a semiconductor region provided on a principal surface of the substrate, the semiconductor region including a mesa waveguide, a first burying region provided on a first side surface of the mesa waveguide, and a second burying region provided on a second side surface of the mesa waveguide. Each of the first and second burying regions includes a plurality of laminate regions and a plurality of bulk semiconductor regions that are alternately arrayed. The laminate regions are separated from each other by the bulk semiconductor regions. The bulk semiconductor regions are provided on side surfaces of the laminate regions so as to embed the laminate regions. Each of the laminate regions includes a semiconductor laminate structure having a plurality of semiconductor layers.
摘要翻译：量子级联半导体激光器包括衬底和设置在衬底的主表面上的半导体区域，所述半导体区域包括台面波导，设置在台面波导的第一侧表面上的第一掩埋区域和设置在台面波导的第一侧表面上的第二掩埋区域在台面波导的第二侧表面上。第一和第二埋藏区域中的每一个包括交替排列的多个层叠区域和多个体半导体区域。层叠区域通过体半导体区域彼此分离。体积半导体区域设置在层叠区域的侧表面上，以便嵌入层叠区域。每个层叠区域包括具有多个半导体层的半导体层叠结构。

4. 发明授权

US10312667B2 Quantum cascade laser 有权
公开(公告)号：US10312667B2
公开(公告)日：2019-06-04
申请号：US15834753
申请日：2017-12-07
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/02 , H01S5/12 , H01S5/16 , H01S5/22 , H01S5/34 , B82Y20/00 , H01S5/028 , H01S5/227
摘要： A quantum cascade laser includes a laser structure including first and second end faces, the laser structure including a semiconductor laminate region and a first embedding semiconductor region. The laser structure includes first and second regions arranged in a direction of a first axis extending from the first to second end faces. Each of the first and second regions includes the semiconductor laminate region. The semiconductor laminate region of the first region has a first recess. The semiconductor laminate region of the second region has a semiconductor mesa. The first recess and the semiconductor mesa extend in the direction of the first axis, and are aligned with each other. The semiconductor mesa has an end face extending in a direction of a second axis intersecting the first axis. The first embedding semiconductor region is disposed in the first recess so as to embed the end face of the semiconductor mesa.

5. 发明申请

US20180166859A1 QUANTUM CASCADE SEMICONDUCTOR LASER 审中-公开
公开(公告)号：US20180166859A1
公开(公告)日：2018-06-14
申请号：US15834706
申请日：2017-12-07
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/34 , H01S5/22 , H01S5/227 , H01S5/042 , B82Y20/00 , H01S5/343
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02469 , H01S5/0281 , H01S5/0282 , H01S5/0287 , H01S5/0425 , H01S5/1082 , H01S5/12 , H01S5/2224 , H01S5/227 , H01S5/3401 , H01S5/34313 , H01S2301/176
摘要： A quantum cascade semiconductor laser includes: a semiconductor mesa having a core layer extending in a direction of a first axis, and an end face extending in a direction of a second axis intersecting the direction of the first axis, and the semiconductor mesa being disposed on a principal surface of a substrate; and a reflective layer disposed on the end face of the semiconductor mesa, the reflective layer including a first semiconductor film in contact with the core layer, the core layer having a superlattice structure, the superlattice structure including a quantum well layer and a barrier layer, and the first semiconductor film of the reflective layer having a bandgap equal to or smaller than that of the quantum well layer.

6. 发明授权

US09843161B2 Quantum cascade laser 有权
公开(公告)号：US09843161B2
公开(公告)日：2017-12-12
申请号：US14865245
申请日：2015-09-25
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/125 , H01S5/187 , H01S5/34
CPC分类号： H01S5/3401 , H01S5/02461 , H01S5/1231 , H01S5/125 , H01S5/2209 , H01S5/2224 , H01S5/3402 , H01S5/34306
摘要： A quantum cascade laser includes a substrate including first and second regions arranged along a first axis; a stacked semiconductor layer disposed in the second region, the stacked semiconductor layer having an end facet located on a boundary between the first and second regions, the stacked semiconductor layer including a core layer and a cladding layer that are exposed at the end facet thereof; and a distributed Bragg reflection structure disposed in the first region, the distributed Bragg reflection structure including a semiconductor wall and a covering semiconductor wall that covers the end facet of the stacked semiconductor layer. The semiconductor wall and the covering semiconductor wall are made of a single semiconductor material. The semiconductor wall provides first and second side surfaces. The covering semiconductor wall provides an end facet that is located away from the first and second side surfaces of the semiconductor wall.

7. 发明申请

US20160094015A1 QUANTUM CASCADE LASER 有权
标题翻译：量子CASCADE激光
公开(公告)号：US20160094015A1
公开(公告)日：2016-03-31
申请号：US14865296
申请日：2015-09-25
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/34 , H01S5/125 , H01S5/22
CPC分类号： H01S5/3402 , H01S5/0202 , H01S5/0224 , H01S5/02272 , H01S5/02476 , H01S5/125 , H01S5/22 , H01S5/2224 , H01S2301/176
摘要： A quantum cascade laser includes a substrate having a principal surface including first and second regions arranged along a first axis; a laser structure disposed on the principal surface in the second region, the laser structure having an end facet intersecting the first axis, the laser structure including a stripe-shaped stacked semiconductor layer extending along the first axis; and a distributed Bragg reflection structure disposed on the principal surface in the first region, the distributed Bragg reflection structure including a semiconductor wall made of a single semiconductor material, the distributed Bragg reflection structure being optically coupled to the end facet of the laser structure. The semiconductor wall has first and second side surfaces that intersect the first axis and extend along a second axis intersecting the principal surface. The semiconductor wall is located away from the end facet of the laser structure.
摘要翻译：量子级联激光器包括具有包括沿着第一轴线布置的第一和第二区域的主表面的衬底; 激光结构，其设置在所述第二区域的主表面上，所述激光结构具有与所述第一轴相交的端面，所述激光结构包括沿着所述第一轴延伸的条状堆叠半导体层; 以及分布式布拉格反射结构，其布置在第一区域的主表面上，分布式布拉格反射结构包括由单个半导体材料制成的半导体壁，所述分布式布拉格反射结构光学耦合到激光结构的端面。半导体壁具有与第一轴相交的第一和第二侧表面，并沿着与主表面相交的第二轴延伸。半导体壁位于远离激光结构的端面的位置。

8. 发明申请

US20210135432A1 QUANTUM CASCADE LASER 有权
公开(公告)号：US20210135432A1
公开(公告)日：2021-05-06
申请号：US17086640
申请日：2020-11-02
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroyuki Yoshinaga , Jun-ichi Hashimoto , Masato Furukawa
IPC分类号： H01S5/34 , H01S5/026
摘要： A quantum cascade laser includes a laser structure having an output face for emitting laser light in a first direction; and a lens having an entrance surface and a convex surface, the entrance surface receiving the laser light from the output face, and the convex surface emitting the laser light after being condensed by the lens. The laser structure includes a semiconductor substrate and a mesa waveguide provided on a first region of a principal surface of the semiconductor substrate, the mesa waveguide extending in the first direction. The lens includes a semiconductor and is provided on a second region of the principal surface of the semiconductor substrate. The first region and the second region are arranged in the first direction.

9. 发明授权

US10476237B2 Quantum cascade laser 有权
公开(公告)号：US10476237B2
公开(公告)日：2019-11-12
申请号：US16011893
申请日：2018-06-19
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto , Hiroyuki Yoshinaga , Yukihiro Tsuji
IPC分类号： H01S5/34 , H01S5/02 , H01S5/042 , H01S5/12 , H01S5/00 , H01S5/028 , H01S5/227 , H01S5/40 , H01S5/22 , B82Y20/00 , H01S5/022 , H01S5/343
摘要： A quantum cascade laser includes: a substrate having a principal surface, a back surface, and a substrate end face, the substrate end face extending along a reference plane intersecting a second direction which intersects the first direction; a semiconductor laminate having a laminate end face extending along the reference plane; a first electrode disposed on the semiconductor laminate; a second electrode disposed on the substrate; a first insulating film disposed on the laminate end face and the first electrode; a metal film disposed on the first insulating film, the laminate end face, the substrate end face, and the second electrode; and a second insulating film disposed on the first electrode, the second insulating film having a part on the first electrode between the metal film and the semiconductor laminate. On the first electrode, the second insulating film has a thickness larger than that of the first insulating film.

10. 发明授权

US10476235B2 Quantum cascade laser 有权
公开(公告)号：US10476235B2
公开(公告)日：2019-11-12
申请号：US16011928
申请日：2018-06-19
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto
IPC分类号： H01S5/34 , H01S5/022 , H01S5/028 , H01S5/227 , H01S5/343 , H01S5/12 , H01S5/02 , H01S5/042 , H01S5/40 , H01S5/22
摘要： A quantum cascade laser includes: a semiconductor substrate including principal and back surfaces; a semiconductor laminate having a laminate end face, the laminate end face and, the substrate end face extending along a reference plane intersecting a second direction that intersects the first direction; a first electrode disposed on the semiconductor laminate, the semiconductor laminate being disposed between the first electrode and the semiconductor substrate; a second electrode disposed on the back surface; a first insulating film disposed on the laminate end face, the substrate end face, and the first electrode; a metal film disposed on the first insulating film and the laminate end face, the substrate end face, and the first electrode; and a second insulating film disposed on the second electrode, and on the substrate end face, the metal film being disposed between the first insulating film and the second insulating film.

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