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1. 发明授权

US10128633B2 Surface emitting semiconductor laser 有权
公开(公告)号：US10128633B2
公开(公告)日：2018-11-13
申请号：US15888850
申请日：2018-02-05
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Yuji Koyama , Masaki Yanagisawa , Yukihiro Tsuji , Hirohiko Kobayashi , Hiroyuki Yoshinaga
IPC分类号： H01S5/00 , H01S5/042 , H01S5/22 , H01S5/183 , H01S5/343 , H01S5/187
摘要： A surface emitting semiconductor laser includes a post disposed on a substrate, the post including an active layer and a distributed Bragg reflector; a first insulating layer disposed on side and top surfaces of the post and on the substrate, the first insulating layer having an opening on the top surface of the post; an electrode disposed in the opening of the first insulating layer; an electric conductor including a pad electrode on the first insulating layer, the electric conductor extending on the first insulating layer to the electrode; and a second insulating layer disposed on the first insulating layer, the electrode, and the electric conductor so as to cover the electrode in the opening of the first insulating layer, the second insulating layer having an opening on the pad electrode, the opening of the second insulating layer having an edge on a top surface of the pad electrode.

2. 发明授权

US09917420B2 Quantum cascade laser integrated device 有权
公开(公告)号：US09917420B2
公开(公告)日：2018-03-13
申请号：US15608664
申请日：2017-05-30
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroyuki Yoshinaga
IPC分类号： H01S5/34 , H01S5/12 , G01N21/17 , H05B37/02 , G01N21/39 , B82Y20/00 , H01S5/40 , H01S5/22 , H01S5/20
CPC分类号： H01S5/3401 , B82Y20/00 , G01N21/1702 , G01N21/39 , G01N2021/1704 , H01S5/12 , H01S5/20 , H01S5/22 , H01S5/2224 , H01S5/2275 , H01S5/4087 , H05B37/02
摘要： A quantum cascade laser integrated device includes: first and second lower semiconductor mesas extending in a direction of a first axis; a covering region disposed on top and side faces of the first and second lower semiconductor mesas, and including first and second upper semiconductor mesas, the first and second upper semiconductor mesas extending in the direction of the first axis on the first and second lower semiconductor mesas, respectively; and first and second electrodes respectively disposed on the upper semiconductor mesas, the first lower semiconductor mesa and the second lower semiconductor mesa each including a quantum cascading core layer, the covering region including a current blocking semiconductor region embedding the first and second lower semiconductor mesas, and a first conductivity-type semiconductor region disposed on the first and second lower semiconductor mesas and the current blocking semiconductor region, and the first conductivity-type semiconductor region including an upper cladding region.

3. 发明授权

US09350140B2 Quantum cascade laser and method for manufacturing quantum cascade laser 有权
标题翻译：量子级联激光器和量子级联激光器的制造方法
公开(公告)号：US09350140B2
公开(公告)日：2016-05-24
申请号：US14701826
申请日：2015-05-01
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroyuki Yoshinaga , Junichi Hashimoto
IPC分类号： H01S5/34 , H01S5/227 , H01S5/343 , H01S5/30 , H01S5/02 , H01S5/028
CPC分类号： H01S5/3401 , H01S5/0203 , H01S5/0287 , H01S5/0425 , H01S5/12 , H01S5/2275 , H01S5/3013 , H01S5/34313
摘要： A quantum cascade laser includes a substrate having first and second regions; a stacked semiconductor layer disposed on the second region, the stacked semiconductor layer including an active layer, the stacked semiconductor layer having a first end facet and a second end facet that constitute a laser cavity; an insulating layer disposed on the first end facet and an upper surface of the stacked semiconductor layer, the insulating layer having an opening on the upper surface; a conductive layer disposed on the insulating layer and in the opening, the conductive layer being in contact with the upper surface through the opening; and a metal layer disposed on the conductive layer on the first end facet and the upper surface. The first end facet of the stacked semiconductor layer is retreated from an end facet of the substrate to a boundary between the first and second regions.
摘要翻译：量子级联激光器包括具有第一和第二区域的衬底; 布置在第二区域上的叠层半导体层，堆叠的半导体层包括有源层，堆叠的半导体层具有构成激光腔的第一端面和第二端面; 设置在所述第一端面上的绝缘层和所述堆叠半导体层的上表面，所述绝缘层在所述上表面上具有开口; 导电层，设置在所述绝缘层上且在所述开口中，所述导电层通过所述开口与所述上表面接触; 以及设置在第一端面和上表面上的导电层上的金属层。堆叠的半导体层的第一端面从衬底的端面退缩到第一和第二区域之间的边界。

4. 发明授权

US11621541B2 Quantum cascade laser 有权
公开(公告)号：US11621541B2
公开(公告)日：2023-04-04
申请号：US17086640
申请日：2020-11-02
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroyuki Yoshinaga , Jun-ichi Hashimoto , Masato Furukawa
IPC分类号： H01S5/34 , H01S5/026 , H01S5/028 , H01S5/30
摘要： A quantum cascade laser includes a laser structure having an output face for emitting laser light in a first direction; and a lens having an entrance surface and a convex surface, the entrance surface receiving the laser light from the output face, and the convex surface emitting the laser light after being condensed by the lens. The laser structure includes a semiconductor substrate and a mesa waveguide provided on a first region of a principal surface of the semiconductor substrate, the mesa waveguide extending in the first direction. The lens includes a semiconductor and is provided on a second region of the principal surface of the semiconductor substrate. The first region and the second region are arranged in the first direction.

5. 发明授权

US10554021B2 Quantum cascade laser, light emitting device, method for fabricating a semiconductor laser 有权
公开(公告)号：US10554021B2
公开(公告)日：2020-02-04
申请号：US16006708
申请日：2018-06-12
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroyuki Yoshinaga
IPC分类号： H01S5/34 , H01S5/227 , H01S5/343 , H01S5/042 , H01S5/10 , H01S5/02 , H01S5/022 , H01S5/028
摘要： A quantum cascade laser includes: a laser structure having a first region, a second region, and a third region, the first region having an end face; a high-specific resistance region on principal surfaces of the first and second regions; a metal layer on a principal surface of the third region; a dielectric film on the end face and the high-specific resistance region; and a reflective metal film on the dielectric film, the end face and the high-specific resistance region. The first to third regions are arranged in a direction of a first axis. The laser structure has a semiconductor mesa and a semiconductor base that mounts the semiconductor mesa. The high-specific resistance region has a wall or terrace providing a difference in level at a boundary between the first and second regions, the wall or terrace extending in a direction of a second axis intersecting that of the first axis.

6. 发明授权

US09923337B2 Quantum cascade laser 有权
公开(公告)号：US09923337B2
公开(公告)日：2018-03-20
申请号：US15352159
申请日：2016-11-15
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroyuki Yoshinaga , Tsukuru Katsuyama , Jun-ichi Hashimoto
IPC分类号： H01S5/34 , H01S5/042 , H01S5/026
CPC分类号： H01S5/3401 , H01S5/02276 , H01S5/026 , H01S5/028 , H01S5/0425 , H01S5/12 , H01S5/125 , H01S5/22 , H01S5/4087
摘要： A quantum cascade laser includes a laser structure including laser waveguide structures and a first terrace region; first electrodes; pad electrodes; and wiring metal conductors. The laser structure includes first, second and third regions arranged in a direction of a first axis. The third region is disposed between the first and second regions. The first region has a first end facet disposed at a boundary between the first and third regions. The first end facet extends in a direction intersecting with the first axis. The second region has a second end facet disposed at a boundary between the second and third regions. The second region includes the laser structure. The pad electrodes are disposed on the first terrace region. The first electrodes are disposed on the laser waveguide structures. Each of the pad electrodes is connected to one of the first electrodes through one of the wiring metal conductors.

7. 发明授权

US09711944B2 Quantum cascade laser 有权
公开(公告)号：US09711944B2
公开(公告)日：2017-07-18
申请号：US15205610
申请日：2016-07-08
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto , Manabu Shiozaki , Hiroyuki Yoshinaga
IPC分类号： H01S5/00 , H01S5/125 , H01S5/34 , H01S5/343 , H01S5/026 , H01S5/227 , H01S5/22 , H01S5/024
CPC分类号： H01S5/125 , H01S5/0014 , H01S5/02461 , H01S5/026 , H01S5/2224 , H01S5/2275 , H01S5/3401 , H01S5/3402 , H01S5/34313 , H01S5/34346
摘要： A quantum cascade laser includes a substrate having a principal surface; a laser body region disposed on the principal surface, the laser body region including a semiconductor laminate structure having an end facet, the laser body region having a waveguide structure extending along a waveguide axis; and a distributed Bragg reflection region disposed on the principal surface, the distributed Bragg reflection region including low and high refractive index portions that are alternately arranged in a direction of the waveguide axis. The end facet of the semiconductor laminate structure is optically coupled to the distributed Bragg reflection region. Each of the high refractive index portions includes a semiconductor wall including upper and lower portions that are arranged in a direction intersecting with the principal surface of the substrate. The principal surface is disposed between the upper and lower portions. The lower portion includes a part of the substrate.

8. 发明申请

US20210135432A1 QUANTUM CASCADE LASER 有权
公开(公告)号：US20210135432A1
公开(公告)日：2021-05-06
申请号：US17086640
申请日：2020-11-02
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroyuki Yoshinaga , Jun-ichi Hashimoto , Masato Furukawa
IPC分类号： H01S5/34 , H01S5/026
摘要： A quantum cascade laser includes a laser structure having an output face for emitting laser light in a first direction; and a lens having an entrance surface and a convex surface, the entrance surface receiving the laser light from the output face, and the convex surface emitting the laser light after being condensed by the lens. The laser structure includes a semiconductor substrate and a mesa waveguide provided on a first region of a principal surface of the semiconductor substrate, the mesa waveguide extending in the first direction. The lens includes a semiconductor and is provided on a second region of the principal surface of the semiconductor substrate. The first region and the second region are arranged in the first direction.

9. 发明授权

US10978855B2 Quantum cascade semiconductor laser 有权
公开(公告)号：US10978855B2
公开(公告)日：2021-04-13
申请号：US16540649
申请日：2019-08-14
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Hiroyuki Yoshinaga
IPC分类号： H01S5/34 , H01S5/227 , H01S5/22 , H01S5/183 , H01S5/16
摘要： A quantum cascade semiconductor laser includes a laser structure having a first area including an end face, a second area, and a third area; a metal layer provided on a major surface in the third area; a separation area provided on the major surface; and a reflector provided on the laser structure. The reflector includes a dielectric film and a metal reflecting film provided on the end face and the separation area. The separation area has a first portion, a second portion, and a third portion. The metal layer has an edge separated from the end face in the third area. The contact layer has an edge separated from the end face in the third area. The first portion projects more than the second portion over the semiconductor mesa. The third portion projects more than the second portion over the semiconductor mesa.

10. 发明授权

US10476237B2 Quantum cascade laser 有权
公开(公告)号：US10476237B2
公开(公告)日：2019-11-12
申请号：US16011893
申请日：2018-06-19
申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.
发明人： Jun-ichi Hashimoto , Hiroyuki Yoshinaga , Yukihiro Tsuji
IPC分类号： H01S5/34 , H01S5/02 , H01S5/042 , H01S5/12 , H01S5/00 , H01S5/028 , H01S5/227 , H01S5/40 , H01S5/22 , B82Y20/00 , H01S5/022 , H01S5/343
摘要： A quantum cascade laser includes: a substrate having a principal surface, a back surface, and a substrate end face, the substrate end face extending along a reference plane intersecting a second direction which intersects the first direction; a semiconductor laminate having a laminate end face extending along the reference plane; a first electrode disposed on the semiconductor laminate; a second electrode disposed on the substrate; a first insulating film disposed on the laminate end face and the first electrode; a metal film disposed on the first insulating film, the laminate end face, the substrate end face, and the second electrode; and a second insulating film disposed on the first electrode, the second insulating film having a part on the first electrode between the metal film and the semiconductor laminate. On the first electrode, the second insulating film has a thickness larger than that of the first insulating film.

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