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1. 发明授权

US11595015B2 Acoustic wave resonator 有权
公开(公告)号：US11595015B2
公开(公告)日：2023-02-28
申请号：US16992434
申请日：2020-08-13
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Tae Kyung Lee , Tae Yoon Kim , Sang Kee Yoon , Chang Hyun Lim , Jong Woon Kim , Moon Chul Lee
IPC分类号： H03H9/02 , H03H9/54 , H03H9/17 , H03H9/13 , H01L41/053 , H01L41/29 , H01L41/31 , H03H3/02
摘要： An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

2. 发明授权

US11476833B2 Acoustic resonator 有权
公开(公告)号：US11476833B2
公开(公告)日：2022-10-18
申请号：US16435621
申请日：2019-06-10
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Tae Yoon Kim , Tae Kyung Lee , Sang Kee Yoon , Sung Jun Lee , Chang Hyun Lim , Nam Jung Lee , Tae Hun Lee , Moon Chul Lee
IPC分类号： H03H9/17 , H03H9/02 , H03H9/13
摘要： An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

3. 发明授权

US11476826B2 Bulk acoustic wave resonator 有权
公开(公告)号：US11476826B2
公开(公告)日：2022-10-18
申请号：US15812842
申请日：2017-11-14
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Won Han , Dae Ho Kim , Yong Suk Kim , Seung Hun Han , Moon Chul Lee , Chang Hyun Lim , Sung Jun Lee , Sang Kee Yoon , Tae Yoon Kim , Sang Uk Son
IPC分类号： H03H9/02 , H03H9/17 , H03H9/13 , H03H3/02
摘要： A bulk acoustic wave resonator includes: a substrate; a membrane layer forming a cavity together with the substrate; a lower electrode disposed on the membrane layer; a piezoelectric layer disposed on a flat surface of the lower electrode; and an upper electrode covering a portion of the piezoelectric layer and exposing a side of the piezoelectric layer to air, wherein the piezoelectric layer includes a step portion extended from the side of the piezoelectric layer and disposed on the flat surface of the lower electrode.

4. 发明授权

US11431318B2 Acoustic resonator and method of manufacturing thereof 有权
公开(公告)号：US11431318B2
公开(公告)日：2022-08-30
申请号：US16391650
申请日：2019-04-23
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Won Han , Chang Hyun Lim , Tae Yoon Kim , Sang Uk Son , Sang Kee Yoon
IPC分类号： H03H9/13 , H03H9/17 , H01L41/047 , H03H3/02 , H03H9/02
摘要： An acoustic resonator includes: a substrate; a resonant portion including a center portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate, and an extension portion disposed along a periphery of the center portion; and a first metal layer disposed outwardly of the resonant portion to be electrically connected to the first electrode. The extension portion includes a lower insertion layer disposed on an upper surface of the first electrode or a lower surface of the first electrode. The piezoelectric layer includes a piezoelectric portion disposed in the center portion, and a bent portion disposed in the extension portion and extended from the piezoelectric portion at an incline according to a shape of the lower insertion layer. The lower insertion layer is formed of a conductive material extending an electrical path between the first electrode and the first metal layer.

5. 发明授权

US10396755B2 Resonator having frame and method of manufacturing the same 有权
公开(公告)号：US10396755B2
公开(公告)日：2019-08-27
申请号：US15271579
申请日：2016-09-21
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Sung Han , Dae Ho Kim , Ran Hee Shin , Hwa Sun Lee , Chang Hyun Lim , Tae Kyung Lee , Sung Sun Kim
IPC分类号： H03H9/17 , H03H3/02 , H03H9/13 , H03H9/54 , H03H9/02
摘要： A resonator includes a resonating portion including a first electrode, a second electrode, and a piezoelectric layer positioned between the first electrode and the second electrode; and a frame provided at an outer edge of the resonating portion, at least a portion of the frame covering an outer end portion of the second electrode.

6. 发明授权

US10298197B2 Bulk acoustic wave resonator and method of manufacturing the same 有权
公开(公告)号：US10298197B2
公开(公告)日：2019-05-21
申请号：US15487620
申请日：2017-04-14
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Moon Chul Lee , Jae Chang Lee , Chang Hyun Lim , Tae Hun Lee , Tae Kyung Lee , Tae Yoon Kim
IPC分类号： H03H9/02 , H01L41/047 , H03H9/54 , H03H9/56 , H03H9/17
摘要： A bulk acoustic wave resonator includes: a substrate; a cavity forming layer disposed on the substrate so as to form a cavity; a lower electrode disposed on the cavity; a piezoelectric layer disposed on the lower electrode; an upper electrode disposed on the piezoelectric layer; and a temperature compensation layer disposed below the lower electrode and in the cavity portion.

7. 发明申请

US20180234075A1 BULK ACOUSTIC WAVE RESONATOR 审中-公开
公开(公告)号：US20180234075A1
公开(公告)日：2018-08-16
申请号：US15809545
申请日：2017-11-10
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Tae Hun Lee , Dae Hun Jeong , Chang Hyun Lim , Tae Yoon Kim , Moon Chul Lee
IPC分类号： H03H9/02 , H01L41/047 , H03H9/17 , H03H9/13
CPC分类号： H03H9/02086 , H01L41/0472 , H01L41/0475 , H03H3/02 , H03H9/13 , H03H9/132 , H03H9/17 , H03H9/173 , H03H9/205 , H03H2003/021
摘要： A bulk acoustic wave resonator includes: a substrate; a lower electrode connecting member disposed on the substrate; a resonating member including a lower electrode disposed on the lower electrode connecting member, a piezoelectric layer disposed on the lower electrode, and an upper electrode disposed on the piezoelectric layer; and an upper electrode connecting member electrically connecting the upper electrode and the substrate to each other. The upper electrode connecting member is extended from the substrate outside of the resonating member and is connected to a top surface of the upper electrode. The lower electrode connecting member electrically connects the lower electrode and the substrate to each other and includes a ring shape corresponding to a shape of the resonating member so as to support an edge of the resonating member.

8. 发明申请

US20150059477A1 ACCELERATION SENSOR 审中-公开
标题翻译：加速传感器
公开(公告)号：US20150059477A1
公开(公告)日：2015-03-05
申请号：US14462359
申请日：2014-08-18
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Jong Woon Kim , Sung Jun Lee , Chang Hyun Lim
IPC分类号： G01P15/12 , H01L41/113
CPC分类号： G01P15/123 , G01P15/18 , G01P2015/0842
摘要： Disclosed herein is an acceleration sensor including: a mass; a flexible beam on which an electrode or a piezoresistive element is disposed and the mass is coupled; and a support part connecting to and supporting the flexible beam and having therein a stress isolating slit facing the mass, wherein the mass, the flexible beam and the support part are formed by coupling first and second substrates, wherein the first substrate has a first masking pattern formed thereon corresponding to the flexible beam, the mass and the support part and the second substrate has a second masking pattern formed thereon corresponding to the mass and the support part.
摘要翻译：本文公开了一种加速度传感器，包括：质量; 柔性梁，其上设置电极或压阻元件并且所述质量块被联接; 以及连接到所述柔性梁并支撑所述柔性梁并且在其中具有面向所述质量块的应力隔离狭缝的支撑部分，其中所述质量块，所述柔性梁和所述支撑部分通过联接第一和第二基板形成，其中所述第一基板具有第一掩蔽形成在其上的图案对应于柔性梁，质量和支撑部分和第二基板具有形成在其上的与质量块和支撑部分对应的第二掩模图案。

9. 发明申请

US20130042963A1 HEAT-RADIATING SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：加热基板及其制造方法
公开(公告)号：US20130042963A1
公开(公告)日：2013-02-21
申请号：US13655376
申请日：2012-10-18
申请人： SAMSUNG ELECTRO-MECHANICS CO., LTD.
发明人： Chang Hyun Lim , Jung Eun Kang , Seog Moon Choi , Kwang Soo Kim , Sung Keun Park
IPC分类号： B32B37/12 , B32B38/08 , B32B38/04
CPC分类号： H05K1/0203 , H05K1/053 , H05K1/141 , H05K2201/062 , H05K2201/09745 , H05K2201/10166 , Y10T29/49083 , Y10T29/49124 , Y10T29/49155 , Y10T156/10 , Y10T156/1056 , Y10T156/1064
摘要： Disclosed herein are a heat-radiating substrate and a method of manufacturing the same. The heat-radiating substrate includes: a core layer including a core metal layer and a core insulating layer formed on the core metal layer and divided into a first region and a second region; a circuit layer formed in the first region of the core layer; a build-up layer formed in the second region of the core layer and including a build-up insulating layer and a build-up circuit layer; an adhesive layer formed between the second region of the core layer and the build-up layer; and an impregnation device mounted on the build-up layer to be impregnated into the adhesive layer. A heat generating element is mounted on the circuit layer and a thermally weakened element is mounted on the build-up layer, thereby preventing the thermally weakened element from being damaged by heat of the heat generating element. The impregnation device is formed on the build-up layer and is impregnated into the adhesive layer, thereby efficiently utilizing a space.
摘要翻译：这里公开了散热基板及其制造方法。散热基板包括：芯层，其包括芯金属层和形成在芯金属层上的芯绝缘层，并分为第一区域和第二区域; 形成在芯层的第一区域中的电路层; 形成在所述芯层的所述第二区域中的堆积层，并且包括积聚绝缘层和积聚电路层; 形成在芯层的第二区域和积层之间的粘合层; 以及安装在堆积层上以浸渍到粘合剂层中的浸渍装置。发热元件安装在电路层上，并且热增强元件安装在积层上，从而防止热弱化元件被发热元件的热量损坏。浸渍装置形成在堆积层上并浸渍在粘合剂层中，从而有效地利用空间。

10. 发明授权

US10892737B2 Bulk-acoustic wave resonator 有权
公开(公告)号：US10892737B2
公开(公告)日：2021-01-12
申请号：US16388979
申请日：2019-04-19
申请人： Samsung Electro-Mechanics Co., Ltd.
发明人： Won Han , Tae Yoon Kim , Sang Uk Son , Chang Hyun Lim
IPC分类号： H03H9/54 , H03H9/13 , H03H9/205 , H03H9/02
摘要： A bulk-acoustic wave resonator includes a substrate; a membrane layer forming a cavity with the substrate; a first electrode at least partially disposed on an upper portion of the cavity including an end portion that is thicker than other portions of the first electrode; an insertion layer including a first portion disposed adjacent to from the end portion of the first electrode and a second portion disposed on an upper portion of the first electrode; a piezoelectric layer disposed to cover the insertion layer; and a second electrode disposed on an upper portion of the piezoelectric layer.

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