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1. 发明申请

US20120329216A1 WET CHEMISTRY PROCESSES FOR FABRICATING A SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY 有权
标题翻译：用于制造具有增加的通道移动性的半导体器件的湿化学方法
公开(公告)号：US20120329216A1
公开(公告)日：2012-12-27
申请号：US13229266
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
IPC分类号： H01L21/28 , H01L21/331 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

2. 发明授权

US09396946B2 Wet chemistry processes for fabricating a semiconductor device with increased channel mobility 有权
标题翻译：用于制造具有增加的沟道迁移率的半导体器件的湿化学工艺
公开(公告)号：US09396946B2
公开(公告)日：2016-07-19
申请号：US13229266
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
IPC分类号： H01L21/3205 , H01L21/04 , H01L21/02 , H01L29/51 , H01L29/739 , H01L29/78 , H01L29/06 , H01L29/16
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

3. 发明授权

US09269580B2 Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof 有权
标题翻译：具有增加的沟道迁移率的半导体器件和用于其制造的干法化学工艺
公开(公告)号：US09269580B2
公开(公告)日：2016-02-23
申请号：US13229276
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
IPC分类号： H01L29/51 , H01L29/78 , H01L21/28 , H01L21/04 , H01L21/02 , H01L29/739 , H01L29/06 , H01L29/16
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

4. 发明申请

US20120326163A1 SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY AND DRY CHEMISTRY PROCESSES FOR FABRICATION THEREOF 有权
标题翻译：具有增加的通道移动性的半导体器件及其制造的干化学处理
公开(公告)号：US20120326163A1
公开(公告)日：2012-12-27
申请号：US13229276
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
IPC分类号： H01L29/161 , H01L29/49 , H01L21/28
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

5. 发明授权

US09478616B2 Semiconductor device having high performance channel 有权
标题翻译：具有高性能通道的半导体器件
公开(公告)号：US09478616B2
公开(公告)日：2016-10-25
申请号：US13039441
申请日：2011-03-03
申请人： Sarit Dhar , Sei-Hyung Ryu , Lin Cheng , Anant Agarwal
发明人： Sarit Dhar , Sei-Hyung Ryu , Lin Cheng , Anant Agarwal
IPC分类号： H01L29/15 , H01L31/0312 , H01L29/10 , H01L21/225 , H01L29/16 , H01L29/66
CPC分类号： H01L29/107 , H01L21/225 , H01L29/1608 , H01L29/66068 , H01L29/66477 , H01L29/66568
摘要： Semiconductor devices having a high performance channel and method of fabrication thereof are disclosed. Preferably, the semiconductor devices are Metal-Oxide-Semiconductor (MOS) devices, and even more preferably the semiconductor devices are Silicon Carbide (SiC) MOS devices. In one embodiment, a semiconductor device includes a SiC substrate of a first conductivity type, a first well of a second conductivity type, a second well of the second conductivity type, and a surface diffused channel of the second conductivity type formed at the surface of semiconductor device between the first and second wells. A depth and doping concentration of the surface diffused channel are controlled to provide increased carrier mobility for the semiconductor device as compared to the same semiconductor device without the surface diffused channel region when in the on-state while retaining a turn-on, or threshold, voltage that provides normally-off behavior.
摘要翻译：公开了具有高性能通道的半导体器件及其制造方法。优选地，半导体器件是金属氧化物半导体（MOS）器件，并且甚至更优选半导体器件是碳化硅（SiC）MOS器件。在一个实施例中，半导体器件包括第一导电类型的SiC衬底，第二导电类型的第一阱，第二导电类型的第二阱以及形成在第二导电类型的表面处的第二导电类型的表面扩散沟道半导体器件在第一和第二阱之间。控制表面扩散通道的深度和掺杂浓度，以便在处于导通状态同时保持导通状态或阈值时，与没有表面扩散沟道区的相同半导体器件相比，为半导体器件提供增加的载流子迁移率，电压提供常态动作。

6. 发明授权

US09029945B2 Field effect transistor devices with low source resistance 有权
标题翻译：具有低源电阻的场效应晶体管器件
公开(公告)号：US09029945B2
公开(公告)日：2015-05-12
申请号：US13102510
申请日：2011-05-06
申请人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
IPC分类号： H01L29/66 , H01L29/15 , H01L31/0312 , H01L29/78 , H01L29/06 , H01L29/739 , H01L29/04 , H01L29/16
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/0696 , H01L29/1608 , H01L29/7395
摘要： A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region. The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
摘要翻译：半导体器件包括具有第一导电类型的漂移层，漂移层中具有与第一导电类型相反的第二导电类型的阱区，以及阱区中的源极区。源区具有第一导电类型并且在阱区中限定沟道区。源极区域包括与沟道区域相邻的横向源极区域和远离与沟道区域相对的横向源极区域延伸的多个源极接触区域。具有第二导电类型的体接触区域在多个源极接触区域中的至少两个之间并且与阱区域接触。源欧姆触点与源极接触区域和身体接触区域中的至少一个重叠。半导体器件的源极接触区域的最小尺寸由源极欧姆接触和至少一个源极接触区域之间的重叠区域限定。

7. 发明申请

US20120280270A1 Field Effect Transistor Devices with Low Source Resistance 有权
标题翻译：具有低源电阻的场效应晶体管器件
公开(公告)号：US20120280270A1
公开(公告)日：2012-11-08
申请号：US13108440
申请日：2011-05-16
申请人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
IPC分类号： H01L29/739 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/0696 , H01L29/1608 , H01L29/7395
摘要： A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
摘要翻译：半导体器件包括具有第一导电类型的漂移层，漂移层中具有与第一导电类型相反的第二导电类型的阱区以及阱区中的源极区。源极区具有第一导电类型并且限定在井区域中的通道区域。源极区域包括与沟道区域相邻的横向源极区域和远离与沟道区域相对的横向源极区域延伸的多个源极接触区域。具有第二导电类型的体接触区域在多个源极接触区域中的至少两个之间并且与阱区域接触。源欧姆触点与源极接触区域和身体接触区域中的至少一个重叠。半导体器件的源极接触区域的最小尺寸由源极欧姆接触和至少一个源极接触区域之间的重叠区域限定。

8. 发明授权

US09142662B2 Field effect transistor devices with low source resistance 有权
标题翻译：具有低源电阻的场效应晶体管器件
公开(公告)号：US09142662B2
公开(公告)日：2015-09-22
申请号：US13108440
申请日：2011-05-16
申请人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
IPC分类号： H01L29/78 , H01L29/06 , H01L29/739 , H01L29/04 , H01L29/16
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/0696 , H01L29/1608 , H01L29/7395
摘要： A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.
摘要翻译：半导体器件包括具有第一导电类型的漂移层，漂移层中具有与第一导电类型相反的第二导电类型的阱区以及阱区中的源极区。源极区具有第一导电类型并且限定在井区域中的通道区域。源极区域包括与沟道区域相邻的横向源极区域和远离与沟道区域相对的横向源极区域延伸的多个源极接触区域。具有第二导电类型的体接触区域在多个源极接触区域中的至少两个之间并且与阱区域接触。源欧姆触点与源极接触区域和身体接触区域中的至少一个重叠。半导体器件的源极接触区域的最小尺寸由源极欧姆接触和至少一个源极接触区域之间的重叠区域限定。

9. 发明申请

US20120280252A1 Field Effect Transistor Devices with Low Source Resistance 有权
公开(公告)号：US20120280252A1
公开(公告)日：2012-11-08
申请号：US13102510
申请日：2011-05-06
申请人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
发明人： Sei-Hyung Ryu , Doyle Craig Capell , Lin Cheng , Sarit Dhar , Charlotte Jonas , Anant Agarwal , John Palmour
IPC分类号： H01L29/12 , H01L29/06 , H01L29/772
CPC分类号： H01L29/7802 , H01L29/045 , H01L29/0696 , H01L29/1608 , H01L29/7395
摘要： A semiconductor device includes a drift layer having a first conductivity type, a well region in the drift layer having a second conductivity type opposite the first conductivity type, and a source region in the well region, The source region has the first conductivity type and defines a channel region in the well region. The source region includes a lateral source region adjacent the channel region and a plurality of source contact regions extending away from the lateral source region opposite the channel region. A body contact region having the second conductivity type is between at least two of the plurality of source contact regions and is in contact with the well region. A source ohmic contact overlaps at least one of the source contact regions and the body contact region. A minimum dimension of a source contact area of the semiconductor device is defined by an area of overlap between the source ohmic contact and the at least one source contact region.

10. 发明申请

US20120223330A1 SEMICONDUCTOR DEVICE HAVING HIGH PERFORMANCE CHANNEL 有权
标题翻译：具有高性能通道的半导体器件
公开(公告)号：US20120223330A1
公开(公告)日：2012-09-06
申请号：US13039441
申请日：2011-03-03
申请人： Sarit Dhar , Sei-Hyung Ryu , Lin Cheng , Anant Agarwal
发明人： Sarit Dhar , Sei-Hyung Ryu , Lin Cheng , Anant Agarwal
IPC分类号： H01L29/161 , H01L21/22
CPC分类号： H01L29/107 , H01L21/225 , H01L29/1608 , H01L29/66068 , H01L29/66477 , H01L29/66568
摘要： Semiconductor devices having a high performance channel and method of fabrication thereof are disclosed. Preferably, the semiconductor devices are Metal-Oxide-Semiconductor (MOS) devices, and even more preferably the semiconductor devices are Silicon Carbide (SiC) MOS devices. In one embodiment, a semiconductor device includes a SiC substrate of a first conductivity type, a first well of a second conductivity type, a second well of the second conductivity type, and a surface diffused channel of the second conductivity type formed at the surface of semiconductor device between the first and second wells. A depth and doping concentration of the surface diffused channel are controlled to provide increased carrier mobility for the semiconductor device as compared to the same semiconductor device without the surface diffused channel region when in the on-state while retaining a turn-on, or threshold, voltage that provides normally-off behavior.
摘要翻译：公开了具有高性能通道的半导体器件及其制造方法。优选地，半导体器件是金属氧化物半导体（MOS）器件，并且甚至更优选半导体器件是碳化硅（SiC）MOS器件。在一个实施例中，半导体器件包括第一导电类型的SiC衬底，第二导电类型的第一阱，第二导电类型的第二阱以及形成在第二导电类型的表面处的第二导电类型的表面扩散沟道半导体器件在第一和第二阱之间。控制表面扩散通道的深度和掺杂浓度，以便在处于导通状态同时保持导通状态或阈值时，与没有表面扩散沟道区的相同半导体器件相比，为半导体器件提供增加的载流子迁移率，电压提供常态动作。

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