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1. 发明申请

US20120329216A1 WET CHEMISTRY PROCESSES FOR FABRICATING A SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY 有权
标题翻译：用于制造具有增加的通道移动性的半导体器件的湿化学方法
公开(公告)号：US20120329216A1
公开(公告)日：2012-12-27
申请号：US13229266
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
IPC分类号： H01L21/28 , H01L21/331 , H01L21/336
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

2. 发明授权

US09396946B2 Wet chemistry processes for fabricating a semiconductor device with increased channel mobility 有权
标题翻译：用于制造具有增加的沟道迁移率的半导体器件的湿化学工艺
公开(公告)号：US09396946B2
公开(公告)日：2016-07-19
申请号：US13229266
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Erik Maki , Jason Gurganus , Daniel Jenner Lichtenwalner
IPC分类号： H01L21/3205 , H01L21/04 , H01L21/02 , H01L29/51 , H01L29/739 , H01L29/78 , H01L29/06 , H01L29/16
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

3. 发明授权

US09269580B2 Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof 有权
标题翻译：具有增加的沟道迁移率的半导体器件和用于其制造的干法化学工艺
公开(公告)号：US09269580B2
公开(公告)日：2016-02-23
申请号：US13229276
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
IPC分类号： H01L29/51 , H01L29/78 , H01L21/28 , H01L21/04 , H01L21/02 , H01L29/739 , H01L29/06 , H01L29/16
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

4. 发明申请

US20120326163A1 SEMICONDUCTOR DEVICE WITH INCREASED CHANNEL MOBILITY AND DRY CHEMISTRY PROCESSES FOR FABRICATION THEREOF 有权
标题翻译：具有增加的通道移动性的半导体器件及其制造的干化学处理
公开(公告)号：US20120326163A1
公开(公告)日：2012-12-27
申请号：US13229276
申请日：2011-09-09
申请人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
发明人： Sarit Dhar , Lin Cheng , Sei-Hyung Ryu , Anant Agarwal , John Williams Palmour , Jason Gurganus
IPC分类号： H01L29/161 , H01L29/49 , H01L21/28
CPC分类号： H01L29/7802 , H01L21/02142 , H01L21/02164 , H01L21/02172 , H01L21/02175 , H01L21/022 , H01L21/02282 , H01L21/02288 , H01L21/02378 , H01L21/045 , H01L21/049 , H01L29/0619 , H01L29/1606 , H01L29/1608 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/7395 , H01L29/78 , H01L29/7813
摘要： Embodiments of a semiconductor device having increased channel mobility and methods of manufacturing thereof are disclosed. In one embodiment, the semiconductor device includes a substrate including a channel region and a gate stack on the substrate over the channel region. The gate stack includes an alkaline earth metal. In one embodiment, the alkaline earth metal is Barium (Ba). In another embodiment, the alkaline earth metal is Strontium (Sr). The alkaline earth metal results in a substantial improvement of the channel mobility of the semiconductor device.
摘要翻译：公开了具有增加的信道移动性的半导体器件及其制造方法的实施例。在一个实施例中，半导体器件包括在沟道区上的衬底上包括沟道区和栅叠层的衬底。栅极堆叠包括碱土金属。在一个实施方案中，碱土金属是钡（Ba）。在另一个实施方案中，碱土金属是锶（Sr）。碱土金属导致半导体器件的沟道迁移率的显着改善。

5. 发明授权

US09548206B2 Ohmic contact structure for group III nitride semiconductor device having improved surface morphology and well-defined edge features 有权
标题翻译：具有改进的表面形态和良好限定的边缘特征的III族氮化物半导体器件的欧姆接触结构
公开(公告)号：US09548206B2
公开(公告)日：2017-01-17
申请号：US13182679
申请日：2011-07-14
申请人： Helmut Hagleitner , Jason Gurganus
发明人： Helmut Hagleitner , Jason Gurganus
IPC分类号： H01L29/45 , H01L21/285 , H01L29/66 , H01L29/778 , H01L29/20
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In general, the ohmic contact structure has a root-mean-squared (RMS) surface roughness of less than 10 nanometers, and more preferably less than or equal to 7.5 nanometers, and more preferably less than or equal to 5 nanometers, and more preferably less than or equal to 2 nanometers, and even more preferably less than or equal to 1.5 nanometers.
摘要翻译：公开了用于III族氮化物半导体器件的欧姆接触结构的实施例及其制造方法。通常，欧姆接触结构的均方根（RMS）表面粗糙度小于10纳米，更优选小于或等于7.5纳米，更优选小于或等于5纳米，更优选地小于或等于2纳米，甚至更优选小于或等于1.5纳米。

6. 发明申请

US20120139084A1 OHMIC CONTACT STRUCTURE FOR GROUP III NITRIDE SEMICONDUCTOR DEVICE HAVING IMPROVED SURFACE MORPHOLOGY AND WELL-DEFINED EDGE FEATURES 有权
标题翻译：具有改进的表面形态和良好边缘特征的III族氮化物半导体器件的OHMIC接触结构
公开(公告)号：US20120139084A1
公开(公告)日：2012-06-07
申请号：US13182679
申请日：2011-07-14
申请人： Helmut Hagleitner , Jason Gurganus
发明人： Helmut Hagleitner , Jason Gurganus
IPC分类号： H01L29/20 , H01L21/26
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L29/7787
摘要： Embodiments of an ohmic contact structure for a Group III nitride semiconductor device and methods of fabrication thereof are disclosed. In general, the ohmic contact structure has a root-mean-squared (RMS) surface roughness of less than 10 nanometers, and more preferably less than or equal to 7.5 nanometers, and more preferably less than or equal to 5 nanometers, and more preferably less than or equal to 2 nanometers, and even more preferably less than or equal to 1.5 nanometers.
摘要翻译：公开了用于III族氮化物半导体器件的欧姆接触结构的实施例及其制造方法。通常，欧姆接触结构的均方根（RMS）表面粗糙度小于10纳米，更优选小于或等于7.5纳米，更优选小于或等于5纳米，更优选地小于或等于2纳米，甚至更优选小于或等于1.5纳米。

7. 发明授权

US08570140B2 Thin film resistor 有权
标题翻译：薄膜电阻
公开(公告)号：US08570140B2
公开(公告)日：2013-10-29
申请号：US13153041
申请日：2011-06-03
申请人： Van Mieczkowski , Jason Gurganus
发明人： Van Mieczkowski , Jason Gurganus
IPC分类号： H01C1/012
CPC分类号： H01C1/02 , H01C1/034 , H01C7/006 , H01C17/075
摘要： The present disclosure relates to a thin film resistor that is formed on a substrate along with other semiconductor devices to form all or part of an electronic circuit. The thin film resistor includes a resistor segment that is formed over the substrate and a protective cap that is formed over the resistor segment. The protective cap is provided to keep at least a portion of the resistor segment from oxidizing during fabrication of the thin film resistor and other components that are provided on the semiconductor substrate. As such, no oxide layer is formed between the resistor segment and the protective cap. Contacts for the thin film resistor may be provided at various locations on the protective cap, and as such, are not provided solely over a portion of the resistor segment that is covered with an oxide layer.
摘要翻译：本公开涉及一种薄膜电阻器，其与其它半导体器件一起形成在衬底上以形成电子电路的全部或部分。薄膜电阻器包括形成在衬底上的电阻器段和形成在电阻器段上的保护帽。提供保护盖以在薄膜电阻器和设置在半导体衬底上的其它部件的制造期间保持电阻器段的至少一部分不被氧化。因此，在电阻器段和保护帽之间不形成氧化物层。可以在保护盖上的各个位置设置用于薄膜电阻器的触点，因此，不仅仅在覆盖有氧化物层的电阻器段的一部分上提供。

8. 发明申请

US20120115319A1 CONTACT PAD 有权
标题翻译：接触垫
公开(公告)号：US20120115319A1
公开(公告)日：2012-05-10
申请号：US12943517
申请日：2010-11-10
申请人： Van Mieczkowski , Zoltan Ring , Jason Gurganus , Helmut Hagleitner
发明人： Van Mieczkowski , Zoltan Ring , Jason Gurganus , Helmut Hagleitner
IPC分类号： H01L21/329
CPC分类号： H01L24/03 , H01L24/05 , H01L24/48 , H01L2224/02166 , H01L2224/04026 , H01L2224/04042 , H01L2224/05124 , H01L2224/05155 , H01L2224/05166 , H01L2224/05169 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/05687 , H01L2224/48463 , H01L2924/00014 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01059 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/12032 , H01L2924/1301 , H01L2924/1306 , H01L2224/45099 , H01L2924/00
摘要： The present disclosure relates to forming multi-layered contact pads for a semiconductor device, wherein the various layers of the contact pad are formed using one or more thin-film deposition processes, such as an evaporation process. Each contact pad includes an adhesion layer, which is formed over the device structure for the semiconductor device; a titanium nitride (TiN) barrier layer, which is formed over the adhesion layer; and an overlay layer, which is formed over the barrier layer. At least the titanium nitride (TiN) barrier layer is formed using an evaporation process.
摘要翻译：本公开涉及形成用于半导体器件的多层接触焊盘，其中使用一个或多个薄膜沉积工艺（诸如蒸发工艺）形成接触焊盘的各个层。每个接触焊盘包括形成在用于半导体器件的器件结构上的粘合层; 在粘合层上形成的氮化钛（TiN）阻挡层; 以及覆盖层，其形成在阻挡层上。至少使用蒸镀法形成氮化钛（TiN）阻挡层。

9. 发明申请

US20080042145A1 DIFFUSION BARRIER FOR LIGHT EMITTING DIODES 审中-公开
标题翻译：用于发光二极管的扩散阻挡层
公开(公告)号：US20080042145A1
公开(公告)日：2008-02-21
申请号：US11465497
申请日：2006-08-18
申请人： Helmut Hagleitner , Zoltan Ring , Jason Gurganus
发明人： Helmut Hagleitner , Zoltan Ring , Jason Gurganus
IPC分类号： H01L33/00
CPC分类号： H01L33/40 , H01L33/32 , H01L33/405 , H01L2224/73265
摘要： A structure is disclosed for preventing reflector metals from migrating in light emitting diodes. The structure includes respective p-type and n-type semiconductor epitaxial layers for generating recombinations and photons under an applied current, a reflecting metal layer proximate at least one of the epitaxial layers for increasing the light output in a desired direction, a first layer of titanium tungsten on the reflecting metal layer, a layer of titanium tungsten nitride on the first titanium tungsten layer, and a second layer of titanium tungsten on the tungsten titanium nitride layer opposite from the first titanium tungsten layer.
摘要翻译：公开了一种用于防止反射体金属在发光二极管中迁移的结构。该结构包括用于在施加的电流下产生复合和光子的相应的p型和n型半导体外延层，靠近至少一个外延层的反射金属层，用于增加沿期望方向的光输出;第一层反射金属层上的钛钨，第一钛钨层上的氮化钛层，和与第一钛钨层相反的钨钛氮化物层上的第二钛钛层。

10. 发明授权

US08563372B2 Methods of forming contact structures including alternating metal and silicon layers and related devices 有权
标题翻译：形成接触结构的方法，包括交替的金属和硅层以及相关器件
公开(公告)号：US08563372B2
公开(公告)日：2013-10-22
申请号：US12704013
申请日：2010-02-11
申请人： Helmut Hagleitner , Zoltan Ring , Scott Sheppard , Jason Henning , Jason Gurganus , Dan Namishia
发明人： Helmut Hagleitner , Zoltan Ring , Scott Sheppard , Jason Henning , Jason Gurganus , Dan Namishia
IPC分类号： H01L21/338
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device, the method comprising providing a semiconductor layer, and providing a first layer of a first metal on the semiconductor layer. A second layer may be provided on the first layer of the first metal. The second layer may include a layer of silicon and a layer of a second metal, and the first and second metals may be different. The first metal may be titanium and the second metal may be nickel. Related devices, structures, and other methods are also discussed.
摘要翻译：一种形成半导体器件的方法，所述方法包括提供半导体层，以及在所述半导体层上提供第一金属的第一层。可以在第一金属的第一层上提供第二层。第二层可以包括硅层和第二金属层，第一和第二金属可以不同。第一金属可以是钛，第二金属可以是镍。还讨论了相关设备，结构和其他方法。

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