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    • 6. 发明申请
    • PYROELECTRIC LIGHT DETECTOR, PYROELECTRIC LIGHT DETECTING DEVICE, AND ELECTRONIC DEVICE
    • 光电检测器,光电检测器件和电子器件
    • US20130105693A1
    • 2013-05-02
    • US13662617
    • 2012-10-29
    • Seiko Epson Corporation
    • Takafumi NODA
    • G01J5/34
    • G01J5/34G01J5/0225G01J5/024G01J5/046
    • A pyroelectric light detector has a base unit, a support member, and a plurality of pyroelectric capacitors containing pyroelectric bodies. The support member includes a first surface and a second surface facing opposite the first surface, and has a hollow space section formed between the second surface and the base unit. The plurality of pyroelectric capacitors are supported by the support member. The plurality of pyroelectric capacitors supported by the support member are electrically connected in series in a direction matching the polarization direction. The position of the projection point for which the center of gravity of the light absorption region corresponding to the pyroelectric capacitor is projected two dimensionally with a plan view can be made to exist inside the region in which the contour line of the pyroelectric body of the pyroelectric capacitor is projected two dimensionally.
    • 热电光检测器具有基座单元,支撑构件和包含热电体的多个热电电容器。 支撑构件包括第一表面和与第一表面相对的第二表面,并且具有形成在第二表面和基座单元之间的中空空间部分。 多个热电电容器由支撑构件支撑。 由支撑构件支撑的多个热电电容器在与偏振方向一致的方向上串联电连接。 与热电电容器对应的光吸收区域的重心的投影点的平面图的二维的投影位置可以存在于热电体的热电体的轮廓线的区域内 电容器二维投影。
    • 8. 发明申请
    • Light Emitting Device And Projector
    • US20220200233A1
    • 2022-06-23
    • US17644807
    • 2021-12-17
    • Seiko Epson Corporation
    • Takafumi NODAYoji KITANO
    • H01S5/026G03B21/20H01S5/34
    • A light emitting device includes a substrate, a transistor, a light emitting element, and an interconnection configured to electrically couple the transistor and the light emitting element to each other, wherein the transistor includes a first impurity region provided to the substrate, a second impurity region which is provided to the substrate, and is same in conductivity type as the first impurity region, and a gate, the light emitting element has a stacked body having a plurality of columnar parts, each of the columnar parts includes a first semiconductor layer, a second semiconductor layer, and a light emitting layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the interconnection is a third impurity region provided to the substrate, the stacked body is provided to the third impurity region, the third impurity region is same in conductivity type as the first semiconductor layer, the third impurity region is electrically coupled to the first semiconductor layer, and the third impurity region is continuous with the first impurity region.