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1. 发明授权

US10032918B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US10032918B2
公开(公告)日：2018-07-24
申请号：US15488626
申请日：2017-04-17
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Daisuke Matsubayashi , Ryo Tokumaru , Yasumasa Yamane , Kiyofumi Ogino , Taichi Endo , Hajime Kimura
IPC分类号： H01L29/78 , H01L29/786 , H01L29/66 , H01L27/105 , H01L27/12
摘要： A highly reliable semiconductor device is provided. The semiconductor device includes a first barrier insulating film; a first gate electrode thereover; a first gate insulating film thereover; an oxide semiconductor film thereover; source and drain electrodes over the oxide semiconductor film; a second gate insulating film over the oxide semiconductor film; a second gate electrode over the second gate insulating film; a second barrier insulating film that covers the oxide semiconductor film, the source and the drain electrodes, and the second gate electrode, and is in contact with side surfaces of the oxide semiconductor film and the source and drain electrodes; and a third barrier insulating film thereover. The first to third barrier insulating films are less likely to transmit hydrogen, water, and oxygen than the first and second gate insulating films. The third barrier insulating film is thinner than the second barrier insulating film. The source and drain electrodes each includes a conductive oxide film in contact with the oxide semiconductor film. The conductive oxide film has more oxygen vacancies than the oxide semiconductor film.

2. 发明授权

US09806200B2 Semiconductor device 有权
公开(公告)号：US09806200B2
公开(公告)日：2017-10-31
申请号：US15077029
申请日：2016-03-22
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Akihisa Shimomura , Tetsuhiro Tanaka , Masayuki Kimura , Ryo Tokumaru , Daisuke Matsubayashi , Yasumasa Yamane
IPC分类号： H01L29/786 , H01L29/772 , H01L29/24 , H01L27/32 , H01L27/12 , G02F1/1368
CPC分类号： H01L29/7869 , G02F1/1368 , H01L27/1225 , H01L27/3262 , H01L29/24 , H01L29/78603
摘要： A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a first insulator, a second insulator, a semiconductor, and a conductor. The semiconductor is over the first insulator. The second insulator is over the semiconductor. The conductor is over the second insulator. The semiconductor includes a first region, a second region, and a third region. The first region is a region where the semiconductor overlaps with the conductor. Each of the second region and the third region is a region where the semiconductor does not overlap with the conductor. The second region and the third region each have a region with a spinel crystal structure.

3. 发明授权

US09722056B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US09722056B2
公开(公告)日：2017-08-01
申请号：US15276993
申请日：2016-09-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Akihisa Shimomura , Yasumasa Yamane , Yuhei Sato , Tetsuhiro Tanaka , Masashi Tsubuku , Toshihiko Takeuchi , Ryo Tokumaru , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toshiya Endo
IPC分类号： H01L21/00 , H01L29/66 , H01L29/786 , H01L21/02
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L29/78606 , H01L29/78618 , H01L29/7869 , H01L29/78693 , H01L29/78696
摘要： A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. Oxygen is introduced into a surface of an insulating film, and then, an oxide semiconductor, a layer which is capable of blocking oxygen, a gate insulating film, and other films which composes a transistor are formed. For at least one of the first gate insulating film and the insulating film, three signals in Electron Spin Resonance Measurement are each observed in a certain range of g-factor. Reducing the sum of the spin densities of the signals will improve reliability of the semiconductor device.

4. 发明授权

US09431541B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09431541B2
公开(公告)日：2016-08-30
申请号：US14457257
申请日：2014-08-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Ryo Tokumaru , Kensuke Yoshizumi
IPC分类号： H01L29/786
CPC分类号： H01L29/78609 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： To give favorable electrical characteristics to a semiconductor device. To provide a semiconductor device in which a change in electrical characteristics is suppressed. To provide a highly reliable semiconductor device. The semiconductor device includes a first insulating layer; a second insulating layer including an opening portion, over the first insulating layer; a semiconductor layer over the first insulating layer; a source electrode and a drain electrode that are apart from each other in a region overlapping with the semiconductor layer; a gate electrode overlapping with the semiconductor layer; and a gate insulating layer between the semiconductor layer and the gate electrode. The first insulating layer includes oxide, and the opening portion of the second insulating layer is positioned inside the semiconductor layer when seen from a top surface side and at least part of the opening portion is provided to overlap with the gate electrode.
摘要翻译：为半导体器件提供有利的电气特性。提供抑制电特性变化的半导体器件。提供高度可靠的半导体器件。半导体器件包括第一绝缘层; 在所述第一绝缘层上方的包括开口部分的第二绝缘层; 在所述第一绝缘层上的半导体层; 在与半导体层重叠的区域中彼此分开的源电极和漏电极; 与半导体层重叠的栅电极; 以及在半导体层和栅电极之间的栅极绝缘层。第一绝缘层包括氧化物，并且当从顶表面侧观察时，第二绝缘层的开口部分位于半导体层内部，并且开口部分的至少一部分被设置为与栅电极重叠。

5. 发明授权

US11211500B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US11211500B2
公开(公告)日：2021-12-28
申请号：US16760052
申请日：2018-11-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Hiromi Sawai , Ryo Tokumaru , Toshihiko Takeuchi , Tsutomu Murakawa , Sho Nagamatsu , Tomoaki Moriwaka
IPC分类号： H01L29/786 , H01L27/105 , H01L27/12 , H01L29/24 , H01L21/02 , H01L29/66
摘要： A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third oxide over the second oxide, a second insulator over the third oxide, a third conductor that is located over the second insulator and overlaps with the third oxide, a third insulator that is located over the first insulator and in contact with a side surface of the first oxide, a side surface of the second oxide, a side surface of the first conductor, a top surface of the first conductor, a side surface of the second conductor, and a top surface of the second conductor, and a fourth insulator over the third conductor, the second insulator, the third oxide, and the third insulator. The fourth insulator is in contact with a top surface of each of the third conductor, the second insulator, and the third oxide.

6. 发明授权

US09698277B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US09698277B2
公开(公告)日：2017-07-04
申请号：US14963945
申请日：2015-12-09
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Tetsuhiro Tanaka , Akihisa Shimomura , Yasumasa Yamane , Ryo Tokumaru , Yuhei Sato , Kazuhiro Tsutsui
IPC分类号： H01L29/10 , H01L29/12 , H01L29/786 , H01L29/49 , H01L29/51 , H01L29/423 , H01L29/66 , H01L21/02 , C23C14/08 , C23C14/34
CPC分类号： H01L29/7869 , C23C14/08 , C23C14/3414 , H01L21/02266 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1207 , H01L27/1225 , H01L29/42384 , H01L29/4908 , H01L29/513 , H01L29/517 , H01L29/66969 , H01L29/78648 , H01L29/78696 , H01L2029/42388
摘要： A transistor with stable electrical characteristics is provided. The transistor includes a first insulator over a substrate; first to third oxide insulators over the first insulator; a second insulator over the third oxide insulator; a first conductor over the second insulator; and a third insulator over the first conductor. An energy level of a conduction band minimum of each of the first and second oxide insulators is closer to a vacuum level than that of the oxide semiconductor is. An energy level of a conduction band minimum of the third oxide insulator is closer to the vacuum level than that of the second oxide insulator is. The first insulator contains oxygen. The number of oxygen molecules released from the first insulator measured by thermal desorption spectroscopy is greater than or equal to 1E14 molecules/cm2 and less than or equal to 1E16 molecules/cm2.

7. 发明申请

US20150053972A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20150053972A1
公开(公告)日：2015-02-26
申请号：US14457257
申请日：2014-08-12
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Ryo Tokumaru , Kensuke Yoshizumi
IPC分类号： H01L29/786
CPC分类号： H01L29/78609 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： To give favorable electrical characteristics to a semiconductor device. To provide a semiconductor device in which a change in electrical characteristics is suppressed. To provide a highly reliable semiconductor device. The semiconductor device includes a first insulating layer; a second insulating layer including an opening portion, over the first insulating layer; a semiconductor layer over the first insulating layer; a source electrode and a drain electrode that are apart from each other in a region overlapping with the semiconductor layer; a gate electrode overlapping with the semiconductor layer; and a gate insulating layer between the semiconductor layer and the gate electrode. The first insulating layer includes oxide, and the opening portion of the second insulating layer is positioned inside the semiconductor layer when seen from a top surface side and at least part of the opening portion is provided to overlap with the gate electrode.
摘要翻译：为半导体器件提供有利的电气特性。提供抑制电特性变化的半导体器件。提供高度可靠的半导体器件。半导体器件包括第一绝缘层; 在所述第一绝缘层上方的包括开口部分的第二绝缘层; 在所述第一绝缘层上的半导体层; 在与半导体层重叠的区域中彼此分开的源电极和漏电极; 与半导体层重叠的栅电极; 以及在半导体层和栅电极之间的栅极绝缘层。第一绝缘层包括氧化物，并且当从顶表面侧观察时，第二绝缘层的开口部分位于半导体层内部，并且开口部分的至少一部分被设置为与栅电极重叠。

8. 发明授权

US11495601B2 Semiconductor device and manufacturing method of semiconductor device 有权
公开(公告)号：US11495601B2
公开(公告)日：2022-11-08
申请号：US17253239
申请日：2019-06-17
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Shunpei Yamazaki , Takanori Matsuzaki , Ryo Tokumaru , Ryota Hodo
IPC分类号： H01L27/108 , H01L29/66 , H01L29/786
摘要： A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a capacitor, an electrode, and an interlayer film. The transistor includes a semiconductor layer, a gate, a source, and a drain; the transistor and the capacitor are placed to be embedded in the interlayer film. Below the semiconductor layer, one of the source and the drain is in contact with the electrode. Above the semiconductor layer, the other of the source and the drain is in contact with one electrode of the capacitor.

9. 发明授权

US10050132B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US10050132B2
公开(公告)日：2018-08-14
申请号：US15664106
申请日：2017-07-31
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Akihisa Shimomura , Yasumasa Yamane , Yuhei Sato , Tetsuhiro Tanaka , Masashi Tsubuku , Toshihiko Takeuchi , Ryo Tokumaru , Mitsuhiro Ichijo , Satoshi Toriumi , Takashi Ohtsuki , Toshiya Endo
IPC分类号： H01L21/00 , H01L29/66 , H01L21/02 , H01L29/786
摘要： A change in electrical characteristics is suppressed and reliability in a semiconductor device using a transistor including an oxide semiconductor is improved. One feature resides in forming an oxide semiconductor film over an oxygen-introduced insulating film, and then forming the source and drain electrodes with an antioxidant film thereunder. Here, in the antioxidant film, the width of a region overlapping with the source and drain electrodes is longer than the width of a region not overlapping with them. The transistor formed as such has less defects in the channel region, which will improve reliability of the semiconductor device.

10. 发明授权

US10032888B2 Semiconductor device, method for manufacturing semiconductor device, and electronic appliance having semiconductor device 有权
公开(公告)号：US10032888B2
公开(公告)日：2018-07-24
申请号：US14829029
申请日：2015-08-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Tetsuhiro Tanaka , Ryo Tokumaru , Yasumasa Yamane , Akihisa Shimomura , Naoki Okuno
IPC分类号： H01L29/10 , H01L29/66 , H01L29/423 , H01L29/786 , H01L29/45 , H01L29/49
摘要： To provide a semiconductor device including an oxide semiconductor layer with high and stable electrical characteristics, the semiconductor device is manufactured by forming a first insulating layer, forming oxide over the first insulating layer and then removing the oxide n times (n is a natural number), forming an oxide semiconductor layer over the first insulating layer, forming a second insulating layer over the oxide semiconductor layer, and forming a conductive layer over the second insulating layer. Alternatively, the semiconductor device is manufactured by forming the oxide semiconductor layer over the first insulating layer, forming the second insulating layer over the oxide semiconductor layer, forming the oxide over the second insulating layer and then removing the oxide n times (n is a natural number), and forming the conductive layer over the second insulating layer.

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